EP1018566B1 - Sputtering target and method for the manufacture thereof - Google Patents

Sputtering target and method for the manufacture thereof Download PDF

Info

Publication number
EP1018566B1
EP1018566B1 EP99124348A EP99124348A EP1018566B1 EP 1018566 B1 EP1018566 B1 EP 1018566B1 EP 99124348 A EP99124348 A EP 99124348A EP 99124348 A EP99124348 A EP 99124348A EP 1018566 B1 EP1018566 B1 EP 1018566B1
Authority
EP
European Patent Office
Prior art keywords
target
deposition rate
sputtering
film deposition
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP99124348A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1018566A2 (en
EP1018566A3 (en
Inventor
Hideyuki Isohara Plant of Nikko Mat. Takahashi
Tateo Isohara Plant of Nikko Mat. Comp. Ohhashi
Kazuhiro Isohara Plant of Nikko Mat. Comp. Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nippon Mining and Metals Co Ltd
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Nippon Mining Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of EP1018566A2 publication Critical patent/EP1018566A2/en
Publication of EP1018566A3 publication Critical patent/EP1018566A3/en
Application granted granted Critical
Publication of EP1018566B1 publication Critical patent/EP1018566B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the present invention relates to a sputtering target having a stable film deposition rate from the initial stage of sputtering, and enabling to eliminate the need for burn-in, or pre-sputtering by practically removing the surface-deformed layer of the sputtering target, and making the surface of the sputtering target in the state suitable for sputtering.
  • the present invention also relates to a method for manufacturing such a sputtering target.
  • the surface of a sputtering target has been finished by machining, such as cutting, grinding, or polishing.
  • sputtering is a process for releasing metal atoms constituting the target by using collision energy generated by physically colliding cations such as Ar+ to a target installed on a cathode
  • the ease of releasing the metal atoms themselves differs depending upon the arrangement of metal atoms in a crystal (crystal orientation).
  • a stable surface state is obtained only after the target has been used for a certain period of time, and the film deposition rate is stabilized.
  • the object of the present invention is to provide a sputtering target having a desired surface state for realizing the stable film deposition rate from the initial stage of the use of the sputtering target, and a method for manufacturing such a sputtering target.
  • the inventors of the present invention conducted repeated examinations for solving the above-described problems, and obtained the following findings.
  • the film deposition rate when the area is undergone sputtering is higher than the film deposition rate when stabilized. Therefore, the surface-deformed layer must be removed to substantially zero.
  • a sputtering target free of the surface-deformed layer formed by machining on the surface thereof subjected to erosion wherein the surface roughness (Ra) defined by the mean roughness on the center line of said surface is in a range between 1.0% and 10% of the mean crystal grain diameter of the material constituting the target.
  • a method for manufacturing a sputtering target comprising the steps of reducing the surface-deformed layer to a thickness of 20 ⁇ m or less by the precision machining of the surface of the sputtering target subjected to erosion, and making the surface roughness Ra be in a range between 1.0% and 10% of the mean crystal grain diameter of the material constituting the target by etching.
  • Ti targets having a purity of 99.995% by weight, and a mean crystal grain diameter of 40 ⁇ m were used for the examinations.
  • Five samples having the states of surface finishing of (1) ordinary lathe finishing; (2) ordinary lathe finishing + wet polishing; (3) precision lathe finishing; (4) precision lathe finishing + wet polishing + chemical etching; and (5) precision lathe finishing + chemical etching (a large amount of etching) were prepared.
  • Table 1 Properties of the samples are shown in Table 1. As Table 1 shows, (4) is the Embodiment of the present invention, and (1), (2), (3), and (5) are Comparative Examples.
  • the film deposition rate plotted for integrated electric energy are shown in FIG. 1 .
  • the surface-deformed layer those are easily sputtered are thick, and the film forming speed is high in the initial stage of the use of the sputtering target.
  • the film deposition rate is high in the initial stage, and the film deposition rate becomes the almost stable (normal) state when integrated electric energy reaches about 20 kWh.
  • the surface-deformed layer of the sample (3) are thinner (20 ⁇ m) than those of the sample (1) and thus approach a favorable surface, surface roughness is small (mirror-finishing), thus sputtering becomes difficult in the initial stage of use, and the film deposition rate is lowered.
  • the mean roughness Ra on the center line of the target is 0.25% of the mean crystal grain diameter.
  • the film deposition rate increases once, then it is stabilized when integrated electric energy reaches about 16 kWh. Such variations in the film deposition rate are not preferable.
  • the stable film deposition rate is obtained from the very initial stage of the use of the sputtering target according to the present invention.
  • Comparative Example (5) Although the Comparative Example (5) has no surface-deformed layers, the amount of etching is large, and surface roughness is large. Therefore, the film deposition rate is low in the initial stage of use, and thereafter, it is almost stabilized when integrated electric energy reaches about 14 kWh.
  • the film deposition rate is kept stabilized from the initial stage of use.
  • Table 2 shows the relationship between the surface roughness Ra, the ratio of the surface roughness Ra to the particle diameter, and integrated electric power until the film deposition rate becomes stabilized.
  • A, B, C, F, and G are Comparative Examples and D and E are the Embodiments of the present invention.
  • [Table 2] Mean roughness on the center line Ra ( ⁇ m) Relative ratio (%) roughness/grain diameter Integrated power consumption (kWh) Thickness of machining-affected layer ( ⁇ m) A 0.004 0.01% 20 10 B 0.02 0.05% 16 10 C 0.04 0.1% 8 0 D 0.4 1.0% 2 0 E 4 10% 3 0 F 20 50% 14 0 G 32 80% 18 0
  • Comparative Examples A and B the surface roughness of the above-described Comparative Example C is further decreased, that is mirror-polished.
  • the integrated electric power of Comparative Example B until the film deposition rate is stabilized is about 16 kWh, almost the same as that of Comparative Example C, that of Comparative Example A which has been mirror-polished is increased to about 20 kWh.
  • Integrated electric power until the film deposition rate of Examples D, and E, and Comparative Examples C, F and G is stabilized is 2, 3, 8, 14, and 18 kWh, respectively, and it is seen that the preferable ratio of the surface roughness Ra to the grain diameter is within a range between 1.0% and 10%.
  • the present invention realizes the surface approximate to the normal state of sputtering in the initial stage of manufacturing the target, and makes the surface of the sputtering target a surface having exposed more or less uneven texture of crystal grains.
  • sputtering proceeds in ordinary sputtering, and the surface same as or similar to the sputtered surface in the normal state is obtained.
  • a sputtering target for the stabilized film deposition rate from the initial stage of sputtering can be provided by making the surface of the sputtering target the state close to a state where the surface has exposed uneven texture of crystal grains, rather than removing almost all of the surface-deformed layer and mirror-polishing the surface.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
EP99124348A 1999-01-08 1999-12-06 Sputtering target and method for the manufacture thereof Expired - Lifetime EP1018566B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP267799 1999-01-08
JP00267799A JP3820787B2 (ja) 1999-01-08 1999-01-08 スパッタリングターゲットおよびその製造方法

Publications (3)

Publication Number Publication Date
EP1018566A2 EP1018566A2 (en) 2000-07-12
EP1018566A3 EP1018566A3 (en) 2003-04-16
EP1018566B1 true EP1018566B1 (en) 2009-05-13

Family

ID=11535947

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99124348A Expired - Lifetime EP1018566B1 (en) 1999-01-08 1999-12-06 Sputtering target and method for the manufacture thereof

Country Status (6)

Country Link
US (2) US6284111B1 (ja)
EP (1) EP1018566B1 (ja)
JP (1) JP3820787B2 (ja)
KR (1) KR100319222B1 (ja)
DE (1) DE69940878D1 (ja)
TW (1) TW533248B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4709358B2 (ja) * 2000-08-30 2011-06-22 株式会社東芝 スパッタリングターゲットとそれを用いたスパッタリング装置、薄膜、および電子部品
US7718117B2 (en) * 2000-09-07 2010-05-18 Kabushiki Kaisha Toshiba Tungsten sputtering target and method of manufacturing the target
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
US7666323B2 (en) 2004-06-09 2010-02-23 Veeco Instruments Inc. System and method for increasing the emissivity of a material
US20060268284A1 (en) * 2005-03-01 2006-11-30 Zhiguo Zhang Method and apparatus for surface roughness measurement
JP2006316339A (ja) * 2005-04-12 2006-11-24 Kobe Steel Ltd Ａｌ系スパッタリングターゲット
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20070215463A1 (en) * 2006-03-14 2007-09-20 Applied Materials, Inc. Pre-conditioning a sputtering target prior to sputtering
US20080110746A1 (en) * 2006-11-09 2008-05-15 Kardokus Janine K Novel manufacturing design and processing methods and apparatus for sputtering targets
US20080121516A1 (en) * 2006-11-29 2008-05-29 Jaydeep Sarkar Method and apparatus for treating sputtering target to reduce burn-in time and sputtering targets made thereby
KR20150047637A (ko) * 2007-01-29 2015-05-04 토소우 에스엠디, 인크 극도로 매끄러운 면의 스퍼터 타겟 및 그 제조 방법
WO2008134516A2 (en) 2007-04-27 2008-11-06 Honeywell International Inc. Novel manufacturing design and processing methods and apparatus for sputtering targets
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
JP4833942B2 (ja) * 2007-08-29 2011-12-07 株式会社コベルコ科研 Ａｇ基合金スパッタリングターゲット
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
WO2013070679A1 (en) 2011-11-08 2013-05-16 Tosoh Smd, Inc. Silicon sputtering target with special surface treatment and good particle performance and methods of making the same
JP6077102B2 (ja) 2013-03-06 2017-02-08 Ｊｘ金属株式会社 スパッタリング用チタンターゲット及びその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663120A (en) 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
US4750932A (en) 1985-04-15 1988-06-14 Gte Products Corporation Refractory metal silicide sputtering target
US5294321A (en) 1988-12-21 1994-03-15 Kabushiki Kaisha Toshiba Sputtering target
JPH03257158A (ja) 1990-03-07 1991-11-15 Toshiba Corp スパッタリングターゲット
US5409517A (en) 1990-05-15 1995-04-25 Kabushiki Kaisha Toshiba Sputtering target and method of manufacturing the same
JPH05214523A (ja) 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
US5464520A (en) 1993-03-19 1995-11-07 Japan Energy Corporation Silicide targets for sputtering and method of manufacturing the same
JP2794382B2 (ja) 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
EP0634498A1 (en) 1993-07-16 1995-01-18 Applied Materials, Inc. Etched sputtering target and process
US5772860A (en) * 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
US5630918A (en) 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
JPH10158829A (ja) * 1996-12-04 1998-06-16 Sony Corp スパッタリングターゲット組立体の製造方法
JP3755559B2 (ja) * 1997-04-15 2006-03-15 株式会社日鉱マテリアルズ スパッタリングターゲット
JP3129233B2 (ja) * 1997-05-09 2001-01-29 三菱マテリアル株式会社 Ｂａ、ＳｒおよびＴｉの複合酸化物焼結体からなる高誘電体膜形成用スパッタリングターゲット
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
JPH1180942A (ja) * 1997-09-10 1999-03-26 Japan Energy Corp Ｔａスパッタターゲットとその製造方法及び組立体
US6139701A (en) * 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition

Also Published As

Publication number Publication date
TW533248B (en) 2003-05-21
EP1018566A2 (en) 2000-07-12
JP2000204467A (ja) 2000-07-25
DE69940878D1 (de) 2009-06-25
US20010030172A1 (en) 2001-10-18
JP3820787B2 (ja) 2006-09-13
EP1018566A3 (en) 2003-04-16
KR100319222B1 (ko) 2002-01-05
KR20000053385A (ko) 2000-08-25
US6284111B1 (en) 2001-09-04

Similar Documents

Publication Publication Date Title
EP1018566B1 (en) Sputtering target and method for the manufacture thereof
EP0326077B1 (en) Circuit board
US7909949B2 (en) Sputtering target with few surface defects, and surface processing method thereof
EP2031087B1 (en) Ag-based alloy sputtering target
EP2241649B1 (en) Ytterbium sputtering target and method for manufacturing the target
US6024852A (en) Sputtering target and production method thereof
EP1942204B1 (en) Sputtering target
CN102224276B (zh) 溅射靶及其制造方法
KR100764325B1 (ko) 텅스텐 스퍼터링 타겟 및 그 제조 방법
KR19990029673A (ko) 탄탈스퍼터링타겟과 그 제조방법 및 조립체
KR101920170B1 (ko) 스퍼터링용 타깃재와 그 제조 방법
EP1115584B1 (en) Method of manufacturing enhanced finish sputtering targets
EP1099777A1 (en) Sputter target
WO2013070679A1 (en) Silicon sputtering target with special surface treatment and good particle performance and methods of making the same
JPH0860352A (ja) Ｉｔｏスパッタリングターゲット
EP1666630A1 (en) Sputtering target and method for finishing surface of such target
US4990362A (en) Method of manufacturing a titanium magnetic disk substrate
JP4714123B2 (ja) スパッタリングターゲット用高純度Ｔａ材の製造方法
JP3898043B2 (ja) スパッタリングターゲットとそれを用いた半導体デバイスおよびスパッタリング装置
JP2007113117A (ja) スパッタリングターゲットの製造方法
JPH06248444A (ja) スパッタリング用ターゲット
JP3129233B2 (ja) Ｂａ、ＳｒおよびＴｉの複合酸化物焼結体からなる高誘電体膜形成用スパッタリングターゲット
RU2000171C1 (ru) Способ получени полированной поверхности на металлокерамическом бериллии
US6093648A (en) Production method for a discrete structure substrate
JPH06136523A (ja) スパッタリングターゲット及びその製造方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

17P Request for examination filed

Effective date: 20010119

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

RIC1 Information provided on ipc code assigned before grant

Ipc: 7C 04B 35/58 B

Ipc: 7H 01J 37/34 B

Ipc: 7C 23C 14/34 A

AK Designated contracting states

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

AKX Designation fees paid

Designated state(s): DE

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NIKKO MATERIALS CO., LTD.

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NIPPON MINING & METALS CO., LTD.

17Q First examination report despatched

Effective date: 20070724

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE

REF Corresponds to:

Ref document number: 69940878

Country of ref document: DE

Date of ref document: 20090625

Kind code of ref document: P

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20100216

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 69940878

Country of ref document: DE

Representative=s name: BOEHMERT & BOEHMERT, DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 69940878

Country of ref document: DE

Representative=s name: BOEHMERT & BOEHMERT ANWALTSPARTNERSCHAFT MBB -, DE

Effective date: 20111202

Ref country code: DE

Ref legal event code: R081

Ref document number: 69940878

Country of ref document: DE

Owner name: JX NIPPON MINING & METALS CORP., JP

Free format text: FORMER OWNER: NIPPON MINING & METALS CO., LTD., TOKIO/TOKYO, JP

Effective date: 20111202

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 69940878

Country of ref document: DE

Representative=s name: BOEHMERT & BOEHMERT ANWALTSPARTNERSCHAFT MBB -, DE

Effective date: 20120524

Ref country code: DE

Ref legal event code: R081

Ref document number: 69940878

Country of ref document: DE

Owner name: JX NIPPON MINING & METALS CORP., JP

Free format text: FORMER OWNER: JX NIPPON MINING & METALS CORP., TOKYO, JP

Effective date: 20120524

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20181120

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69940878

Country of ref document: DE