DE69940878D1 - Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets - Google Patents
Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen TargetsInfo
- Publication number
- DE69940878D1 DE69940878D1 DE69940878T DE69940878T DE69940878D1 DE 69940878 D1 DE69940878 D1 DE 69940878D1 DE 69940878 T DE69940878 T DE 69940878T DE 69940878 T DE69940878 T DE 69940878T DE 69940878 D1 DE69940878 D1 DE 69940878D1
- Authority
- DE
- Germany
- Prior art keywords
- target
- making
- sputtering
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00267799A JP3820787B2 (ja) | 1999-01-08 | 1999-01-08 | スパッタリングターゲットおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69940878D1 true DE69940878D1 (de) | 2009-06-25 |
Family
ID=11535947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69940878T Expired - Lifetime DE69940878D1 (de) | 1999-01-08 | 1999-12-06 | Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets |
Country Status (6)
Country | Link |
---|---|
US (2) | US6284111B1 (de) |
EP (1) | EP1018566B1 (de) |
JP (1) | JP3820787B2 (de) |
KR (1) | KR100319222B1 (de) |
DE (1) | DE69940878D1 (de) |
TW (1) | TW533248B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4709358B2 (ja) * | 2000-08-30 | 2011-06-22 | 株式会社東芝 | スパッタリングターゲットとそれを用いたスパッタリング装置、薄膜、および電子部品 |
WO2002020865A1 (fr) * | 2000-09-07 | 2002-03-14 | Kabushiki Kaisha Toshiba | Cible de pulverisation au tungstene et son procede de fabrication |
US20050072668A1 (en) * | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
US20050236270A1 (en) * | 2004-04-23 | 2005-10-27 | Heraeus, Inc. | Controlled cooling of sputter targets |
US7666323B2 (en) | 2004-06-09 | 2010-02-23 | Veeco Instruments Inc. | System and method for increasing the emissivity of a material |
US20060268284A1 (en) * | 2005-03-01 | 2006-11-30 | Zhiguo Zhang | Method and apparatus for surface roughness measurement |
JP2006316339A (ja) * | 2005-04-12 | 2006-11-24 | Kobe Steel Ltd | Al系スパッタリングターゲット |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US20070125646A1 (en) | 2005-11-25 | 2007-06-07 | Applied Materials, Inc. | Sputtering target for titanium sputtering chamber |
US20070215463A1 (en) * | 2006-03-14 | 2007-09-20 | Applied Materials, Inc. | Pre-conditioning a sputtering target prior to sputtering |
US20080110746A1 (en) * | 2006-11-09 | 2008-05-15 | Kardokus Janine K | Novel manufacturing design and processing methods and apparatus for sputtering targets |
US20080121516A1 (en) * | 2006-11-29 | 2008-05-29 | Jaydeep Sarkar | Method and apparatus for treating sputtering target to reduce burn-in time and sputtering targets made thereby |
KR20150047637A (ko) * | 2007-01-29 | 2015-05-04 | 토소우 에스엠디, 인크 | 극도로 매끄러운 면의 스퍼터 타겟 및 그 제조 방법 |
TWI432592B (zh) | 2007-04-27 | 2014-04-01 | Honeywell Int Inc | 具有降低預燒時間之濺鍍靶,其製造方法及其用途 |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
JP4833942B2 (ja) * | 2007-08-29 | 2011-12-07 | 株式会社コベルコ科研 | Ag基合金スパッタリングターゲット |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
JP2015504479A (ja) | 2011-11-08 | 2015-02-12 | トーソー エスエムディー,インク. | 特別な表面処理及び優れた粒子性能を有するシリコンスパッターターゲット及びその製造方法 |
WO2014136702A1 (ja) | 2013-03-06 | 2014-09-12 | Jx日鉱日石金属株式会社 | スパッタリング用チタンターゲット及びその製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663120A (en) | 1985-04-15 | 1987-05-05 | Gte Products Corporation | Refractory metal silicide sputtering target |
US4750932A (en) | 1985-04-15 | 1988-06-14 | Gte Products Corporation | Refractory metal silicide sputtering target |
US5294321A (en) | 1988-12-21 | 1994-03-15 | Kabushiki Kaisha Toshiba | Sputtering target |
JPH03257158A (ja) | 1990-03-07 | 1991-11-15 | Toshiba Corp | スパッタリングターゲット |
US5409517A (en) | 1990-05-15 | 1995-04-25 | Kabushiki Kaisha Toshiba | Sputtering target and method of manufacturing the same |
JPH05214523A (ja) | 1992-02-05 | 1993-08-24 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
US5464520A (en) | 1993-03-19 | 1995-11-07 | Japan Energy Corporation | Silicide targets for sputtering and method of manufacturing the same |
JP2794382B2 (ja) | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
EP0634498A1 (de) | 1993-07-16 | 1995-01-18 | Applied Materials, Inc. | Angeätzter Zerstäubungs-Target und Verfahren |
US5772860A (en) * | 1993-09-27 | 1998-06-30 | Japan Energy Corporation | High purity titanium sputtering targets |
US5630918A (en) | 1994-06-13 | 1997-05-20 | Tosoh Corporation | ITO sputtering target |
JPH10158829A (ja) * | 1996-12-04 | 1998-06-16 | Sony Corp | スパッタリングターゲット組立体の製造方法 |
JP3755559B2 (ja) * | 1997-04-15 | 2006-03-15 | 株式会社日鉱マテリアルズ | スパッタリングターゲット |
JP3129233B2 (ja) * | 1997-05-09 | 2001-01-29 | 三菱マテリアル株式会社 | Ba、SrおよびTiの複合酸化物焼結体からなる高誘電体膜形成用スパッタリングターゲット |
US5993621A (en) * | 1997-07-11 | 1999-11-30 | Johnson Matthey Electronics, Inc. | Titanium sputtering target |
JPH1180942A (ja) * | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Taスパッタターゲットとその製造方法及び組立体 |
US6139701A (en) * | 1997-11-26 | 2000-10-31 | Applied Materials, Inc. | Copper target for sputter deposition |
-
1999
- 1999-01-08 JP JP00267799A patent/JP3820787B2/ja not_active Expired - Lifetime
- 1999-12-02 TW TW088121042A patent/TW533248B/zh not_active IP Right Cessation
- 1999-12-06 EP EP99124348A patent/EP1018566B1/de not_active Expired - Lifetime
- 1999-12-06 DE DE69940878T patent/DE69940878D1/de not_active Expired - Lifetime
- 1999-12-13 US US09/459,805 patent/US6284111B1/en not_active Expired - Lifetime
-
2000
- 2000-01-05 KR KR1020000000238A patent/KR100319222B1/ko active IP Right Grant
-
2001
- 2001-05-24 US US09/864,703 patent/US20010030172A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1018566B1 (de) | 2009-05-13 |
JP2000204467A (ja) | 2000-07-25 |
EP1018566A3 (de) | 2003-04-16 |
US6284111B1 (en) | 2001-09-04 |
JP3820787B2 (ja) | 2006-09-13 |
US20010030172A1 (en) | 2001-10-18 |
EP1018566A2 (de) | 2000-07-12 |
TW533248B (en) | 2003-05-21 |
KR100319222B1 (ko) | 2002-01-05 |
KR20000053385A (ko) | 2000-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Ref document number: 1018566 Country of ref document: EP Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN, DE |