DE69633823D1 - Verfahren zur herstellung eines sputtertargets - Google Patents

Verfahren zur herstellung eines sputtertargets

Info

Publication number
DE69633823D1
DE69633823D1 DE69633823T DE69633823T DE69633823D1 DE 69633823 D1 DE69633823 D1 DE 69633823D1 DE 69633823 T DE69633823 T DE 69633823T DE 69633823 T DE69633823 T DE 69633823T DE 69633823 D1 DE69633823 D1 DE 69633823D1
Authority
DE
Germany
Prior art keywords
producing
sputter target
sputter
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69633823T
Other languages
English (en)
Other versions
DE69633823T2 (de
Inventor
Susumu Nakagama
Masao Higeta
Atsushi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE69633823D1 publication Critical patent/DE69633823D1/de
Publication of DE69633823T2 publication Critical patent/DE69633823T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
DE69633823T 1995-05-18 1996-05-17 Verfahren zur herstellung eines sputtertargets Expired - Fee Related DE69633823T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12019795 1995-05-18
JP12019795 1995-05-18
PCT/JP1996/001312 WO1996036746A1 (fr) 1995-05-18 1996-05-17 Procede de production d'une cible de pulverisation

Publications (2)

Publication Number Publication Date
DE69633823D1 true DE69633823D1 (de) 2004-12-16
DE69633823T2 DE69633823T2 (de) 2005-10-27

Family

ID=14780318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633823T Expired - Fee Related DE69633823T2 (de) 1995-05-18 1996-05-17 Verfahren zur herstellung eines sputtertargets

Country Status (5)

Country Link
US (1) US6248291B1 (de)
EP (1) EP0834594B1 (de)
JP (1) JP3827725B2 (de)
DE (1) DE69633823T2 (de)
WO (1) WO1996036746A1 (de)

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JP4733890B2 (ja) * 1999-10-13 2011-07-27 Ａｇｃセラミックス株式会社 ＳｉＯ２を主成分とする膜の成膜方法
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US7794554B2 (en) 2001-02-14 2010-09-14 H.C. Starck Inc. Rejuvenation of refractory metal products
CN1221684C (zh) * 2001-02-14 2005-10-05 H·C·施塔克公司 高熔点金属制品的再生
JP2003013216A (ja) * 2001-06-27 2003-01-15 Bridgestone Corp 透明薄膜の成膜方法
FR2832335B1 (fr) * 2001-11-19 2004-05-14 Bernard Pierre Serole Procede de compactage et soudure de materiaux par ajustement de la vitesse d'une onde de choc au cours de la traversee de materiaux
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US20030175142A1 (en) * 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
AU2003261463A1 (en) 2002-08-27 2004-03-19 Symmorphix, Inc. Optically coupling into highly uniform waveguides
WO2004060560A1 (ja) * 2002-12-27 2004-07-22 Fujitsu Limited 光触媒アパタイト膜の形成方法
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
CA2584566C (en) * 2004-11-15 2013-12-10 Nippon Mining & Metals Co., Ltd. Sputtering target for producing metallic glass membrane and manufacturing method thereof
DE602005017512D1 (de) 2004-12-08 2009-12-17 Symmorphix Inc Abscheidung von licoo2
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
WO2007043102A1 (ja) * 2005-09-30 2007-04-19 Mitsubishi Denki Kabushiki Kaisha 放電表面処理用電極及び放電表面処理方法並びに被膜
DE102006026005A1 (de) * 2006-06-01 2007-12-06 W.C. Heraeus Gmbh Kaltgepresste Sputtertargets
JP2010505044A (ja) 2006-09-29 2010-02-18 インフィニット パワー ソリューションズ， インコーポレイテッド フレキシブル基板のマスキングおよびフレキシブル基板上にバッテリ層を堆積させるための材料拘束
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
KR20150128817A (ko) 2007-12-21 2015-11-18 사푸라스트 리써치 엘엘씨 전해질 막을 위한 표적을 스퍼터링하는 방법
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
US8518581B2 (en) 2008-01-11 2013-08-27 Inifinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US8350519B2 (en) 2008-04-02 2013-01-08 Infinite Power Solutions, Inc Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
WO2010019577A1 (en) 2008-08-11 2010-02-18 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
KR101613671B1 (ko) 2008-09-12 2016-04-19 사푸라스트 리써치 엘엘씨 전자기 에너지에 의해 데이터 통신을 하는 통합 도전성 표면을 가진 에너지 장치 및 그 통신 방법
US8508193B2 (en) 2008-10-08 2013-08-13 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
CN102576828B (zh) 2009-09-01 2016-04-20 萨普拉斯特研究有限责任公司 具有集成薄膜电池的印刷电路板
CN102234765B (zh) * 2010-04-23 2013-04-17 昆明物理研究所 一种生长碲镉汞薄膜的靶材制备方法
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
CN102146555A (zh) * 2011-04-20 2011-08-10 韶关市欧莱高新材料有限公司 一种Sn-Si靶材
JP5851612B2 (ja) * 2012-11-02 2016-02-03 Jx日鉱日石金属株式会社 タングステン焼結体スパッタリングターゲット及び該ターゲットを用いて成膜したタングステン膜
WO2015151498A1 (ja) * 2014-03-31 2015-10-08 株式会社 東芝 スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP7302791B2 (ja) * 2020-05-18 2023-07-04 東京エレクトロン株式会社 複合ターゲット、複合ターゲットの製造方法及び窒化物半導体膜の形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58511B2 (ja) * 1976-12-02 1983-01-06 住友電気工業株式会社 スパツタ−リング用タ−ゲツト材の製造法
AT388752B (de) * 1986-04-30 1989-08-25 Plansee Metallwerk Verfahren zur herstellung eines targets fuer die kathodenzerstaeubung
JPS63128141A (ja) * 1986-11-17 1988-05-31 Matsushita Electric Ind Co Ltd スパツタリング用タ−ゲツトの製造方法
DE3716852C1 (de) * 1987-05-20 1988-07-14 Demetron Sputtertarget zur Erzeugung optisch transparenter Schichten und Verfahren zur Herstellung dieser Targets
CA1317204C (en) * 1988-05-18 1993-05-04 Masahiro Yanagawa Process for producing highly functional composite material and composite material obtained thereby
US4954170A (en) * 1989-06-30 1990-09-04 Westinghouse Electric Corp. Methods of making high performance compacts and products
US5500301A (en) * 1991-03-07 1996-03-19 Kabushiki Kaisha Kobe Seiko Sho A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
JPH04323366A (ja) * 1991-04-19 1992-11-12 Asahi Glass Co Ltd スパッタリング用ターゲット及びその製造方法
US5342571A (en) * 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
US5518432A (en) * 1992-09-24 1996-05-21 Fuji Electric Company, Ltd. Method for manufacturing thin-film EL device
US5510173A (en) * 1993-08-20 1996-04-23 Southwall Technologies Inc. Multiple layer thin films with improved corrosion resistance

Also Published As

Publication number Publication date
WO1996036746A1 (fr) 1996-11-21
EP0834594B1 (de) 2004-11-10
EP0834594A1 (de) 1998-04-08
DE69633823T2 (de) 2005-10-27
US6248291B1 (en) 2001-06-19
JP3827725B2 (ja) 2006-09-27
EP0834594A4 (de) 1999-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee