EP0926270A1 - Procédé et appareillage pour la fabrication d'un monocristal - Google Patents

Procédé et appareillage pour la fabrication d'un monocristal Download PDF

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Publication number
EP0926270A1
EP0926270A1 EP98123048A EP98123048A EP0926270A1 EP 0926270 A1 EP0926270 A1 EP 0926270A1 EP 98123048 A EP98123048 A EP 98123048A EP 98123048 A EP98123048 A EP 98123048A EP 0926270 A1 EP0926270 A1 EP 0926270A1
Authority
EP
European Patent Office
Prior art keywords
heater
melt
single crystal
annular
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98123048A
Other languages
German (de)
English (en)
Other versions
EP0926270B1 (fr
Inventor
Wilfried Dr. Von Ammon
Erich Dr. Tomzig
Janis Dr. Virbulis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of EP0926270A1 publication Critical patent/EP0926270A1/fr
Application granted granted Critical
Publication of EP0926270B1 publication Critical patent/EP0926270B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Definitions

  • the invention relates to a method and an apparatus for producing a single crystal from semiconductor material by pulling the single crystal out of a melt that is in is in a crucible and is heated by a side heater, that surrounds the crucible.
  • the single crystal namely starts at too high drawing speeds, that give up desired cylindrical growth and out of round grow, that is, instead of a cylindrical surface flat Crystal surfaces according to its crystallographic To train orientation. It also increases an out-of-round Growth the risk of generating crystal lattice defects, that make the drawn material unusable.
  • the present invention shows one way of achieving can be that the transition from a cylindrical growth to non-circular growth only at higher drawing speeds than usual.
  • the invention relates to a method for producing a Single crystal made of semiconductor material by pulling the single crystal from a melt located in a crucible and is heated by a side heater that holds the crucible surrounds, which is characterized in that the melt through an annular heater that surrounds the single crystal and arranged above the melt in an annular Area around the single crystal is additionally heated.
  • the process expands access to cylindrically shaped ones Single crystals that are largely free of L defects. It is particularly advantageous for the production of single crystals made of silicon with large diameters, for example with Diameters of 200 mm, 300 mm or 400 mm can be used.
  • a device for carrying out the method, which is characterized by an annular heating device, which surrounds the single crystal, arranged above the melt and emits radiation that melts in one annular area heated around the single crystal.
  • the annular heating device is advantageously so arranged over the melt that the distance between the Single crystal and the heater is shorter than the distance between the heater and the crucible wall.
  • the distance to the single crystal is as small as possible and is, for example, only 3 cm.
  • the heater at the bottom of a thermally insulating To attach the heat shield against the single crystal Shields heat radiation from the side heater. It is on it to make sure that the heater only the melt and not heated the single crystal. If necessary, therefore thermal insulation, for example the heat shield, provided between the single crystal and the heater be.
  • the distance between the annular heater and the surface of the melt is preferably 10 to 20 mm.
  • the ring-shaped heater heats the melt in one near the surface, which is around the single crystal. This creates it in the melt between the single crystals and the crucible has a steep, axial temperature gradient, which promotes cylindrical growth of the single crystal.
  • the annular heater can also be used to be a part of that needed to produce the melt To deliver energy and that for melting the semiconductor material shorten the time required. It is also preferred that the heating power of the side heater and, if applicable, that of one Floor heater, which is located under the crucible, reduced when the melt passes through the annular heater is additionally heated. That way it can Crucible material, which usually consists of quartz glass and is attacked by the hot melt against premature ones Corrosion are protected. The reduced speed the corrosion of the crucible also has a favorable effect on the yield on single-crystalline semiconductor material.
  • annular heater because of its small size thermal mass also preferred for fast power control, which in turn the diameter growth and the Pulling speed influenced, can be used. Thereby fluctuations in diameter and drawing speed reduce significantly.
  • the invention can also be used to Oxygen content in the melt and consequently also in the single crystal to be checked by varying the heating output.
  • Increasing the heating power of the annular heater promotes the escape of SiO through the surface of the Melt while the heating power of the side heater and if necessary, that of the floor heater can be reduced, which reduces the corrosion of the quartz glass. In this way the concentration of oxygen in the melt is reduced and less oxygen built into the single crystal.
  • Fig. 1 is the annular heater as a reflector 1 formed, the above the melt 2 at the bottom of a thermal insulation 3 is fixed and heat radiation in Direction reflected on the melt.
  • the reflector is with close to the single crystal 4 around the single crystal arranged. Due to the reflected heat radiation Melt in an annular area around the single crystal heated.
  • the annular heating device can also, as shown in FIG. 2 is shown as an active heater 5.
  • This can be a resistance heater, for example made of graphite or molybdenum, or one with high frequency AC powered induction heater.
  • the latter exists preferably from a high temperature resistant, electrical highly conductive material, for example made of molybdenum, Tungsten or tantalum, or is known as water-cooled copper or Silver tube trained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
EP98123048A 1997-12-18 1998-12-08 Procédé et appareillage pour la fabrication d'un monocristal Expired - Lifetime EP0926270B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19756613 1997-12-18
DE19756613A DE19756613A1 (de) 1997-12-18 1997-12-18 Verfahren und Vorrichtung zur Herstellung eines Einkristalls

Publications (2)

Publication Number Publication Date
EP0926270A1 true EP0926270A1 (fr) 1999-06-30
EP0926270B1 EP0926270B1 (fr) 2002-03-20

Family

ID=7852572

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98123048A Expired - Lifetime EP0926270B1 (fr) 1997-12-18 1998-12-08 Procédé et appareillage pour la fabrication d'un monocristal

Country Status (6)

Country Link
US (2) US6132507A (fr)
EP (1) EP0926270B1 (fr)
JP (1) JP3066742B2 (fr)
KR (1) KR100297575B1 (fr)
DE (2) DE19756613A1 (fr)
TW (1) TW548353B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056638A1 (de) 2009-12-02 2011-06-09 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibenden Durchmesser
DE102016209008A1 (de) 2016-05-24 2017-11-30 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinem Silizium
CN111321458A (zh) * 2018-12-13 2020-06-23 上海新昇半导体科技有限公司 加热式导流筒

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040055527A1 (en) * 2000-11-30 2004-03-25 Makoto Kojima Process for controlling thermal history of vacancy-dominated, single crystal silicon
WO2002044446A2 (fr) * 2000-11-30 2002-06-06 Memc Electronic Materials, Inc. Procede de commande de l'historique des temperatures de silicium monocristallin a lacunes predominantes
US6481894B1 (en) * 2001-02-23 2002-11-19 Lord Corporation Pitch bearing
DE60323663D1 (de) * 2002-11-12 2008-10-30 Memc Electronic Materials Kristallziehvorrichtung und verfahren zur züchtung einer einkristallstange
US7063743B2 (en) * 2003-04-11 2006-06-20 Sumitomo Mitsubishi Silicon Corporation Apparatus and method for pulling single crystal
DE102011079284B3 (de) 2011-07-15 2012-11-29 Siltronic Ag Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2852420A (en) * 1956-06-28 1958-09-16 Rauland Corp Method of manufacturing semiconductor crystals
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
JPS5836998A (ja) * 1981-08-26 1983-03-04 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
US4597949A (en) * 1983-03-31 1986-07-01 Massachusetts Institute Of Technology Apparatus for growing crystals
WO1992018672A1 (fr) * 1991-04-20 1992-10-29 Komatsu Electronic Metals Co., Ltd. Dispositif et procede pour la croissance de cristaux
JPH0627684A (ja) * 1992-07-10 1994-02-04 Tokyo Ohka Kogyo Co Ltd リソグラフィー用リンス液及びそれを用いた半導体デバイスの製造方法
JPH06211591A (ja) * 1993-01-05 1994-08-02 Nippon Steel Corp 単結晶体の製造方法及びその装置
EP0811707A1 (fr) * 1996-06-05 1997-12-10 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Procédé et appareillage pour la fabrication de monocristaux
DE19806045A1 (de) * 1997-02-13 1998-08-27 Samsung Electronics Co Ltd Verfahren zum Herstellen von einkristallinen Siliziumstäben und Siliziumwafern unter Steuern des Ziehgeschwindigkeitsverlaufs in einem Heißzonenofen, sowie mit dem Verfahren hergestellte Stäbe und Wafer
EP0866150A1 (fr) * 1997-03-21 1998-09-23 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Appareillage et procédé pour le tirage d'un monocristal

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US4597969A (en) * 1982-04-05 1986-07-01 Merck Sharp & Dohme Stabilization of unstable drugs or food supplements
JPS6027684A (ja) * 1983-07-26 1985-02-12 Fujitsu Ltd 単結晶製造装置
JPS62119189A (ja) * 1985-11-19 1987-05-30 Toshiba Corp 単結晶の製造装置
JP2686460B2 (ja) * 1990-03-12 1997-12-08 住友シチックス株式会社 単結晶製造方法
US5260037A (en) * 1990-03-12 1993-11-09 Osaka Titanium Co., Ltd. Apparatus for producing silicon single crystal
US5132091A (en) * 1990-12-17 1992-07-21 General Electric Company Apparatus and method employing focussed radiative heater for control of solidification interface shape in a crystal growth process
US5137699A (en) * 1990-12-17 1992-08-11 General Electric Company Apparatus and method employing interface heater segment for control of solidification interface shape in a crystal growth process
US5441014A (en) * 1991-06-24 1995-08-15 Komatsu Electronic Metals Co., Ltd. Apparatus for pulling up a single crystal
EP0867531B1 (fr) * 1995-12-08 2004-06-02 Shin-Etsu Handotai Company, Limited Appareil de production de monocristaux et processus s'y rapportant
JP3892496B2 (ja) * 1996-04-22 2007-03-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2852420A (en) * 1956-06-28 1958-09-16 Rauland Corp Method of manufacturing semiconductor crystals
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
JPS5836998A (ja) * 1981-08-26 1983-03-04 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
US4597949A (en) * 1983-03-31 1986-07-01 Massachusetts Institute Of Technology Apparatus for growing crystals
WO1992018672A1 (fr) * 1991-04-20 1992-10-29 Komatsu Electronic Metals Co., Ltd. Dispositif et procede pour la croissance de cristaux
JPH0627684A (ja) * 1992-07-10 1994-02-04 Tokyo Ohka Kogyo Co Ltd リソグラフィー用リンス液及びそれを用いた半導体デバイスの製造方法
JPH06211591A (ja) * 1993-01-05 1994-08-02 Nippon Steel Corp 単結晶体の製造方法及びその装置
EP0811707A1 (fr) * 1996-06-05 1997-12-10 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Procédé et appareillage pour la fabrication de monocristaux
DE19806045A1 (de) * 1997-02-13 1998-08-27 Samsung Electronics Co Ltd Verfahren zum Herstellen von einkristallinen Siliziumstäben und Siliziumwafern unter Steuern des Ziehgeschwindigkeitsverlaufs in einem Heißzonenofen, sowie mit dem Verfahren hergestellte Stäbe und Wafer
EP0866150A1 (fr) * 1997-03-21 1998-09-23 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Appareillage et procédé pour le tirage d'un monocristal

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 244 (P - 1734) 10 May 1994 (1994-05-10) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 575 (C - 1268) 4 November 1994 (1994-11-04) *
PATENT ABSTRACTS OF JAPAN vol. 7, no. 118 (C - 167)<1263> 21 May 1983 (1983-05-21) *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056638A1 (de) 2009-12-02 2011-06-09 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibenden Durchmesser
US8906157B2 (en) 2009-12-02 2014-12-09 Siltronic Ag Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
DE102016209008A1 (de) 2016-05-24 2017-11-30 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinem Silizium
DE102016209008B4 (de) 2016-05-24 2019-10-02 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinem Silizium
US10844513B2 (en) 2016-05-24 2020-11-24 Siltronic Ag Method for producing a semiconductor wafer of monocrystalline silicon, device for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline
CN111321458A (zh) * 2018-12-13 2020-06-23 上海新昇半导体科技有限公司 加热式导流筒

Also Published As

Publication number Publication date
KR19990063097A (ko) 1999-07-26
KR100297575B1 (ko) 2001-10-26
EP0926270B1 (fr) 2002-03-20
DE19756613A1 (de) 1999-07-01
US6132507A (en) 2000-10-17
JPH11228285A (ja) 1999-08-24
TW548353B (en) 2003-08-21
JP3066742B2 (ja) 2000-07-17
US6238477B1 (en) 2001-05-29
DE59803424D1 (de) 2002-04-25

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