KR19990063097A - 단결정제조의 방법 및 장치 - Google Patents
단결정제조의 방법 및 장치 Download PDFInfo
- Publication number
- KR19990063097A KR19990063097A KR1019980055305A KR19980055305A KR19990063097A KR 19990063097 A KR19990063097 A KR 19990063097A KR 1019980055305 A KR1019980055305 A KR 1019980055305A KR 19980055305 A KR19980055305 A KR 19980055305A KR 19990063097 A KR19990063097 A KR 19990063097A
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- melt
- heating device
- heat
- annular
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (11)
- 도가니에 담겨 있으며, 도가니를 둘러싸고 있는 측면 가열기에 의해 가열되는 융해물로부터 단결정을 끌어당기어 반도체 물질의 단결정을 제조하는 방법에 있어서, 상기 융해물은 단결정을 둘러싸고 융해물위에 배치된 환상가열장치에 의해 추가로 가열됨을 특징으로 하는 반도체 물질의 단결정을 제조하는 방법.
- 제 1 항에 있어서,상기 융해물이 환상가열장치에 의해 추가로 가열될 때, 측면가열기의 가열출력 및 필요할 경우, 저면가열기의 가열출력은 감소됨을 특징으로 하는 반도체 물질의 단결정을 제조하는 방법.
- 제 1 항에 있어서,상기 융해물은 단결정이 견인되기전에 제조되며, 이것을 위해 필요한 열의 일부분이 환상가열장치에 의해 공급됨을 특징으로 하는 반도체 물질의 단결정을 제조하는 방법.
- 제 1 항에 있어서,상기 환상가열장치는 가열출력의 신속제어를 위하여 사용됨을 특징으로 하는 반도체 물질의 단결정을 제조하는 방법.
- 도가니에 담겨 있으며 도가니를 둘러싸고 있는 측면가열기에 의해 가열되는 융해물에서 단결정을 견인하는 장치에 있어서,단결정을 둘러싸고 있는 환상가열장치는 융해물위에 배치되여 단결정 주위의 환상영역에서 융해물을 가열하는 방열을 발하는 것을 특징으로 하는 융해물에서 단결정을 견인하는 장치.
- 제 5 항에 있어서,환상가열장치는 융해물을 향하여 열방사를 반사하는 반사기인 것을 특징으로 하는 융해물에서 단결정을 견인하는 장치.
- 제 5 항에 있어서,황상가열장치는 융해물 방향으로 열복사를 방사하는 저항가열기임을 특징으로 하는 융해물에서 단결정을 견인하는 장치.
- 제 5 항에 있어서,환상가열장치는 단결정 주위의 환상영역에서 융해물을 유도성으로 가열하는 유도가열기임을 특징으로 하는 융해물에서 단결정을 견인하는 장치.
- 제 5 항에 있어서,환상가열장치는 단결정을 열적으로 차폐하는 열막이의 하단부에 고정됨을 특징으로 하는 융해물에서 단결정을 견인하는 장치.
- 제 5 항에 있어서,본 장치는 단결정과 환상가열장치 사이에 열절연을 구비한 것을 특징으로 하는 융해물에서 단결정을 견인하는 장치.
- 제 1 항에 있어서,성장단결정의 산소함유량은, 측면가열기의 열출력 및 경우에 따라서는, 저면가열기의 열출력과 결합하여 환상가열장치의 열출력을 조정함으로서 제어됨을 특징으로 하는 반도체 물질의 단결정을 제조하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19756613A DE19756613A1 (de) | 1997-12-18 | 1997-12-18 | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
DE19756613.8 | 1997-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990063097A true KR19990063097A (ko) | 1999-07-26 |
KR100297575B1 KR100297575B1 (ko) | 2001-10-26 |
Family
ID=7852572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980055305A KR100297575B1 (ko) | 1997-12-18 | 1998-12-16 | 단결정제조방법및그인발장치 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6132507A (ko) |
EP (1) | EP0926270B1 (ko) |
JP (1) | JP3066742B2 (ko) |
KR (1) | KR100297575B1 (ko) |
DE (2) | DE19756613A1 (ko) |
TW (1) | TW548353B (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1346086A2 (en) * | 2000-11-30 | 2003-09-24 | MEMC Electronic Materials, Inc. | Process for controlling thermal history of vacancy-dominated, single crystal silicon |
US20040055527A1 (en) * | 2000-11-30 | 2004-03-25 | Makoto Kojima | Process for controlling thermal history of vacancy-dominated, single crystal silicon |
US6481894B1 (en) * | 2001-02-23 | 2002-11-19 | Lord Corporation | Pitch bearing |
US8147613B2 (en) * | 2002-11-12 | 2012-04-03 | Memc Electronic Materials, Inc. | Crystal puller and method for growing a monocrystalline ingot |
US7063743B2 (en) * | 2003-04-11 | 2006-06-20 | Sumitomo Mitsubishi Silicon Corporation | Apparatus and method for pulling single crystal |
DE102009056638B4 (de) | 2009-12-02 | 2013-08-01 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser |
DE102011079284B3 (de) | 2011-07-15 | 2012-11-29 | Siltronic Ag | Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall |
DE102016209008B4 (de) | 2016-05-24 | 2019-10-02 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinem Silizium |
CN111321458A (zh) * | 2018-12-13 | 2020-06-23 | 上海新昇半导体科技有限公司 | 加热式导流筒 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2852420A (en) * | 1956-06-28 | 1958-09-16 | Rauland Corp | Method of manufacturing semiconductor crystals |
FR1316707A (fr) * | 1961-12-22 | 1963-02-01 | Radiotechnique | Perfectionnements aux dispositifs d'obtention de monocristaux par tirage |
JPS5836998A (ja) * | 1981-08-26 | 1983-03-04 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
US4597969A (en) * | 1982-04-05 | 1986-07-01 | Merck Sharp & Dohme | Stabilization of unstable drugs or food supplements |
US4597949A (en) * | 1983-03-31 | 1986-07-01 | Massachusetts Institute Of Technology | Apparatus for growing crystals |
JPS6027684A (ja) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | 単結晶製造装置 |
JPS62119189A (ja) * | 1985-11-19 | 1987-05-30 | Toshiba Corp | 単結晶の製造装置 |
US5260037A (en) * | 1990-03-12 | 1993-11-09 | Osaka Titanium Co., Ltd. | Apparatus for producing silicon single crystal |
JP2686460B2 (ja) * | 1990-03-12 | 1997-12-08 | 住友シチックス株式会社 | 単結晶製造方法 |
US5137699A (en) * | 1990-12-17 | 1992-08-11 | General Electric Company | Apparatus and method employing interface heater segment for control of solidification interface shape in a crystal growth process |
US5132091A (en) * | 1990-12-17 | 1992-07-21 | General Electric Company | Apparatus and method employing focussed radiative heater for control of solidification interface shape in a crystal growth process |
JP2509477B2 (ja) * | 1991-04-20 | 1996-06-19 | コマツ電子金属株式会社 | 結晶成長方法及び結晶成長装置 |
US5441014A (en) * | 1991-06-24 | 1995-08-15 | Komatsu Electronic Metals Co., Ltd. | Apparatus for pulling up a single crystal |
JPH0627684A (ja) * | 1992-07-10 | 1994-02-04 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用リンス液及びそれを用いた半導体デバイスの製造方法 |
JP3207573B2 (ja) * | 1993-01-05 | 2001-09-10 | ワッカー・エヌエスシーイー株式会社 | 単結晶体の製造方法及びその装置 |
KR100415860B1 (ko) * | 1995-12-08 | 2004-06-04 | 신에쯔 한도타이 가부시키가이샤 | 단결정제조장치및제조방법 |
JP3892496B2 (ja) * | 1996-04-22 | 2007-03-14 | Sumco Techxiv株式会社 | 半導体単結晶製造方法 |
DE19622664A1 (de) * | 1996-06-05 | 1997-12-11 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen |
SG64470A1 (en) * | 1997-02-13 | 1999-04-27 | Samsung Electronics Co Ltd | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
DE19711922A1 (de) * | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
-
1997
- 1997-12-18 DE DE19756613A patent/DE19756613A1/de not_active Withdrawn
-
1998
- 1998-11-20 JP JP10331219A patent/JP3066742B2/ja not_active Expired - Lifetime
- 1998-12-04 US US09/206,061 patent/US6132507A/en not_active Expired - Lifetime
- 1998-12-08 DE DE59803424T patent/DE59803424D1/de not_active Expired - Lifetime
- 1998-12-08 EP EP98123048A patent/EP0926270B1/de not_active Expired - Lifetime
- 1998-12-16 TW TW087120906A patent/TW548353B/zh not_active IP Right Cessation
- 1998-12-16 KR KR1019980055305A patent/KR100297575B1/ko not_active IP Right Cessation
-
2000
- 2000-03-07 US US09/520,290 patent/US6238477B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100297575B1 (ko) | 2001-10-26 |
US6238477B1 (en) | 2001-05-29 |
DE19756613A1 (de) | 1999-07-01 |
JP3066742B2 (ja) | 2000-07-17 |
TW548353B (en) | 2003-08-21 |
JPH11228285A (ja) | 1999-08-24 |
EP0926270A1 (de) | 1999-06-30 |
US6132507A (en) | 2000-10-17 |
DE59803424D1 (de) | 2002-04-25 |
EP0926270B1 (de) | 2002-03-20 |
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