EP0891686B1 - Dispositif electroluminescent - Google Patents
Dispositif electroluminescent Download PDFInfo
- Publication number
- EP0891686B1 EP0891686B1 EP97908105A EP97908105A EP0891686B1 EP 0891686 B1 EP0891686 B1 EP 0891686B1 EP 97908105 A EP97908105 A EP 97908105A EP 97908105 A EP97908105 A EP 97908105A EP 0891686 B1 EP0891686 B1 EP 0891686B1
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- EP
- European Patent Office
- Prior art keywords
- layer
- electroluminescent
- gallium nitride
- electrode
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000463 material Substances 0.000 claims description 40
- 229910002601 GaN Inorganic materials 0.000 claims description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 4
- 239000011707 mineral Substances 0.000 claims description 4
- 229910002056 binary alloy Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 229910002058 ternary alloy Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 80
- 238000000034 method Methods 0.000 description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 10
- 239000005416 organic matter Substances 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- -1 poly (p-phenylene-vinylene) Polymers 0.000 description 5
- 229920000112 poly(2,5-bis(cholestanoxy) phenylene vinylene) Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229920000547 conjugated polymer Polymers 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- SPROTAUJOXXVSH-UHFFFAOYSA-N C(C)(C)(C)C1=C(C=CC=C1)N1C=NCO1.C1(=CC=CC=C1)C1=CC=CC=C1 Chemical compound C(C)(C)(C)C1=C(C=CC=C1)N1C=NCO1.C1(=CC=CC=C1)C1=CC=CC=C1 SPROTAUJOXXVSH-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- CALSBFKQLKYESS-UHFFFAOYSA-N n,n-dimethyl-2,3-diphenylaniline Chemical compound C=1C=CC=CC=1C=1C(N(C)C)=CC=CC=1C1=CC=CC=C1 CALSBFKQLKYESS-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229920000397 poly[2,5-bis(cholestanoxy)-1,4-phenylenevinylene] polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
Definitions
- the present invention relates to a device electroluminescent comprising a layer of organic matter light emitting semiconductor disposed between a first electrode, constituted by a material having the property of injecting electrons into said layer of electroluminescent material, and a second electrode constituted by a material having the property of injecting holes in this layer.
- the semiconductor organic matter consists of either a monomeric organic substance, made up of molecules fluorescent, such as anthracene, perylene and coronene, or molecules of an organic dye, either in a conjugated organic polymer such as poly (p-phenylene-vinylene).
- the electron-emitting electrode is, for example, constituted by a layer of a metal chosen from aluminum, magnesium and calcium, or by a layer of metallic alloy, such as an alloy of magnesium and silver, and the hole-emitting electrode is constituted, for example, by a layer of a metal such as gold or by a layer of tin oxide (SnO 2 ) or mixed oxide d 'indium and tin (ITO).
- Such electroluminescent devices can in particular be used as light emitting diodes in display elements, as well as for the manufacture of screens dishes for laptop or television.
- the hole injector electrode was produced in the form of a transparent layer, constituted, by example, mixed oxide of indium and tin, the electrode being an electron injector, it is opaque or reflective. Devices of this type cannot emit light than on one side. According to one of the variants of the device described in application WO 90/13148, it is however mentioned that at least one of the charge injecting contact layers, when these layers are gold or aluminum and do not exceed not a certain thickness, is transparent or semi-transparent. It is however not specified which of these layers is transparent or semi-transparent.
- the devices currently known have the disadvantage of having too short a lifespan for the industrial applications envisaged. More specifically, the best known devices of this kind, in which the layer of organic matter electroluminescent consists of an organic substance monomer, only allow a maximum duration of use of around a thousand hours, in continuous operation, while the best known devices, in which the layer of electroluminescent organic matter consists of a conjugated polymer, do not generally last continuous use greater than one hundred hours.
- the invention aims to provide a device of the kind mentioned above which is capable of emitting light on its two faces, i.e. an electroluminescent device in which the two electrodes placed on either side of the layer of electroluminescent material are transparent or translucent.
- Another object of the invention is to make it possible to improve the life of the device.
- the device according to the invention is characterized in that said first electrode is in the form a transparent or translucent layer of a material n-type semiconductor chosen from nitrides and mineral oxides.
- the material constituting the electron-emitting electrode is chosen from gallium nitride GaN, binary alloys of gallium nitride and indium nitride, of general formula Ga x In ( 1-x ) N, the alloys ternaries of gallium nitride, indium nitride and aluminum nitride, of general formula Ga x Al y In ( 1-xy ) N and mixtures of at least two of these compounds and alloys, where x and y each represent a number between 0 and 1, the sum x + y being at most equal to 1, the conductivity character n of said material possibly resulting from a stoichiometry gap or from doping with at least one element chosen from groups 4a and 6a of the periodic table.
- doping element one can, in particular use one of the following: Si, Sn, S, Se and Te.
- n-type semiconductor material in particular gallium nitride and its alloys, can be used in any suitable form, in particular in the form monocrystalline, polycrystalline, nanocrystalline or amorphous, or as a superposition of layers of this type having compositions, so values of x or y, or doping, different.
- the electron injecting nature of such materials can possibly result from the existence of gaps in stoichiometry or doping with at least one element such as, for example H, Li, Ca, Al, Cs.
- titanium oxides can be used in any suitable form, in particular in the form monocrystalline, polycrystalline, nanocrystalline or amorphous.
- electroluminescent semiconductor organic matter constituting the electroluminescent layer we can use any appropriate material, especially those made up of substances already used for this purpose in accordance with the prior art, in particular, polymers conjugates, such as poly (p-phenylene-vinylene), commonly designated by the abbreviation PPV or poly p-phenylene, PPP, or still the polythiophene, PT, those in which the nucleus phenyl or thiophene carry one or more substituents such as an alkyl group, an alkoxy group, a halogen or a nitro group, as well as conjugated polymers such as poly (4,4'-diphenylene-diphenylvinylene), commonly known by the abbreviation PDPV; poly (1,4-phenylene-1-phenylinyene); poly (1,4-phenylene-diphenyvinylene); polymers of the poly (3-alkylthiofen) or poly (3-alkylpyrrole) type, polymers of
- conjugated polymers derived from known polymers such as those which have been mentioned above, by grafting at the ends of the polymer chains group with the property of strengthening the membership of the electroluminescent conjugated polymer layer on the surface electrodes, in particular the electron-emitting electrode and more particularly on a layer of gallium nitride or titanium oxide is particularly advantageous.
- polymers derived from poly (phenylene) whose chain ends have one of the following formulas:
- organic matter electroluminescent constituting the layer electroluminescent a monomeric substance, a dye or organic pigment, this substance or this dye or pigment can in particular be chosen from those who suitable for use in devices prior art light emitting lamps. These dyes can also be functionalized so as to adhere better to the electrode of the invention.
- the same materials as those used in light-emitting devices according to the prior art can be used, in particular gold, tin oxide SnO 2 or else mixed oxide of indium and tin (in particular the commercial product known by the designation ITO), in the form of a transparent layer.
- a such material can be, for example, made of a compound of the diphenyl-dimethylphenylamine type, known as TPD designation.
- any suitable method can be used, in in particular the techniques used for the manufacture of prior art devices.
- the compound layer is first formed n-type semiconductor mineral constituting the electrode electron emitter, on the surface of the substrate serving support for the electroluminescent device, this substrate being advantageously constituted by a transparent insulating material such as a sapphire or quartz plate.
- titanium oxide layer as defined above, the methods known per se can be used of titanium oxidation, sol-gel polymerization methods from organic precursors, methods of plasma spraying or bombardment ionic. These latter methods seem particularly indicated.
- the layer of semiconductor organic matter light-emitting we can also use any appropriate technique, including evaporation processes thermal, soaking in a solution (so-called “dip-coating"), the deposition of a layer of substance, such than a solution of the electroluminescent material, or agents precursors thereof, in a suitable solvent, on the surface of the electron emitting electrode (or, if applicable of the hole emitting electrode), making rotate the substrate (the process known as “spinning” or “spin-coating” so as to obtain a thickness perfectly uniform layer, possibly followed by treatment thermal or chemical to form the film of electroluminescent material proper.
- the layer of material of the hole-emitting electrode such as gold, tin oxide and mixed oxide of indium and tin
- a material is used as substrate transparent or translucent and the thicknesses of the layers of material constituting the two electrodes, and those of any auxiliary layers (layers of transport or stop negative or positive charges), so that these layers are all transparent or translucent.
- auxiliary layers such as reflective layers, forming a mirror, or semi-transparent and / or dielectric layers, in order to direct or reinforce the light emitted by the device certain components, in particular by training microcavities.
- a second type of multicolored display can be made using elements formed by juxtaposition of a plurality, for example three, of devices according to the invention, these devices comprising layers of material different electroluminescent organic having different light emission wavelengths, operating by mixing colors controlled by variation of voltages applied to the various component devices every element.
- a third type of multicolored display can be made using elements formed by juxtaposition of a plurality, for example three, of devices according to the invention, these devices comprising layers additional auxiliaries favoring the selection of a narrow wavelength range within the spectrum light emission emitted by the organic layer (s) electroluminescent, working by mixing colors controlled by variation of voltages applied to the different devices making up each element.
- a thin transparent layer 2 of gallium nitride GaN having a thickness of 10 micrometers is formed on the wafer 1, serving as a substrate, by chemical reaction in the vapor phase between gallium chloride GaCl and ammonia NH 3 at the temperature of 1050 ° C., in the presence helium used as carrier gas, the substrate being maintained at the reaction temperature by means of a susceptor heated by high frequency induction.
- a carrier gas other than helium, for example nitrogen.
- gallium chloride instead of gallium chloride, we could also use an organometallic compound of gallium, such as trimethylgallium or triethylgallium.
- Layer 2 of gallium nitride adheres strongly on the surface of substrate 1. It has a n-type semiconductor character, resulting from vacancies in stoichiometry, in the absence of any doping element.
- the Layer 2 surface impedance value is approximately 10 ohms.
- a film 3 of poly [2,5-bis (cholestanoxy) -1,4-phenylenevinylene] (polymer designated by the initials BCHA-PPV) having a thickness of 0.2 micrometer.
- layer 4 of gold is deposited by vacuum evaporation in a manner known per se, using a classic thermal evaporation device.
- layer 2 By applying a difference in electrical potential of a few volts between layers 2 and 4 which thus constitute, the negative electrode and the positive electrode respectively device, layer 2 emits electrons which are injected in the polymer film 3 and the layer 4 emits positive charges, generally designated by the term "holes" which are injected, in the opposite direction into film 3.
- the charges of opposite sign thus injected into the film 3 combine with each other and later decompose into producing an emission of light, in a manner known per se.
- Current-voltage and current characteristic curves luminous-voltage of the electroluminescent device of FIG. 1 are shown in Figures 4 and 5 respectively.
- FIG. 2 A second embodiment of the device according to the invention is illustrated in FIG. 2
- a layer is interposed transparent 6 of material favoring the transport of electrons (this material consisting of 8-hydroxyquinoline aluminum, compound, commonly referred to by the name Alq3) and a transparent layer 7 of material constituting a positive charge barrier layer (this material consisting in 2- (4 biphenyl-5- (tertbutyl-phenyl) 1,3,5-oxadiazole, commonly composed, designated by the name "butyl-PBD”) and, on the other hand, that the hole emitting electrode is consisting of a transparent layer 4a of indium oxide and tin (commercial product designated by ITO name) having a thickness of 0.15 micrometer.
- Layers 6 and 7 are each 0.02 thick micrometer.
- a thin and transparent layer 32 of amorphous titanium oxide TiO 2 strongly doped with aluminum is formed on a square glass plate 1 with a side of 1 cm having a thickness of 1 mm.
- a layer of aluminum 10 nm thick is first evaporated, then a layer of TiO 2 10 nm thick is sprayed with a magnetron, then a new layer of aluminum. 1 nm thick and so on until the total thickness of layer 2 is 50 nm.
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- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Description
Claims (3)
- Dispositif électroluminescent, comprenant une couche de matière organique semiconductrice électroluminescente disposée entre une première électrode, constituée par un matériau ayant la propriété d'injecter des électrons dans ladite couche de matière électroluminescente, et une deuxième électrode, constituée par une couche de matériau conducteur électrique ayant la propriété d'injecter des trous dans la couche de matière électroluminescente, caractérisé en ce que ladite première électrode est sous forme d'une couche transparente ou translucide en un matériau semiconducteur de type n choisi parmi les nitrures minéraux.
- Dispositif selon la revendication 1, caractérisé en ce que ledit matériau semiconducteur est choisi parmi le nitrure de gallium GaN, les alliages binaires de nitrure de gallium et nitrure d'indium, de formule générale GaxIn(1-x)N, les alliages binaires de nitrure de gallium et nitrure d'aluminium et les alliages ternaires de nitrure de gallium, nitrure d'indium et nitrure d'aluminium, de formule générale GaxAlyIn(1-x-y)N, et les mélanges d'au moins deux de ces composé et alliages, où x et y représentent chacun un nombre compris entre 0 et 1, la somme x + y étant au plus égale à 1.
- Dispositif selon la revendication 2, caractérisé en ce que le nitrure de gallium est à l'état sous-stoectiométrique ou à l'état dopé par au moins un élément choisi dans les groupes 4a et 6a de la classification périodique.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH86396 | 1996-04-03 | ||
CH86396 | 1996-04-03 | ||
CH863/96 | 1996-04-03 | ||
PCT/CH1997/000133 WO1997038558A1 (fr) | 1996-04-03 | 1997-04-02 | Dispositif électroluminescent |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0891686A1 EP0891686A1 (fr) | 1999-01-20 |
EP0891686B1 true EP0891686B1 (fr) | 1999-10-06 |
Family
ID=4196942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97908105A Expired - Lifetime EP0891686B1 (fr) | 1996-04-03 | 1997-04-02 | Dispositif electroluminescent |
Country Status (5)
Country | Link |
---|---|
US (1) | US6208074B1 (fr) |
EP (1) | EP0891686B1 (fr) |
JP (1) | JP2000508112A (fr) |
DE (1) | DE69700602T2 (fr) |
WO (1) | WO1997038558A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI109944B (fi) * | 1998-08-11 | 2002-10-31 | Valtion Teknillinen | Optoelektroninen komponentti ja valmistusmenetelmä |
US6468676B1 (en) * | 1999-01-02 | 2002-10-22 | Minolta Co., Ltd. | Organic electroluminescent display element, finder screen display device, finder and optical device |
US7102280B1 (en) * | 1999-11-29 | 2006-09-05 | Paulus Cornelis Duineveld | Organic electroluminescent device and a method of manufacturing thereof |
TW484238B (en) * | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
US20040109560A1 (en) * | 2000-12-29 | 2004-06-10 | Frank Nuovo | Method of producing a telephone device |
WO2004091261A1 (fr) * | 2003-04-08 | 2004-10-21 | Koninklijke Philips Electronics N.V. | Dispositif electroluminescent a deux cotes |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990005998A1 (fr) * | 1988-11-21 | 1990-05-31 | Mitsui Toatsu Chemicals, Inc. | Element photo-emetteur |
JP2764591B2 (ja) * | 1988-12-16 | 1998-06-11 | 株式会社小松製作所 | 薄膜el素子とその製造方法 |
GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
JP2717454B2 (ja) * | 1990-07-16 | 1998-02-18 | 日本石油株式会社 | 有機薄膜エレクトロルミネッセンス素子 |
JP3205036B2 (ja) * | 1991-03-27 | 2001-09-04 | グンゼ株式会社 | 透明導電膜 |
JP2666228B2 (ja) * | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US5608287A (en) * | 1995-02-23 | 1997-03-04 | Eastman Kodak Company | Conductive electron injector for light-emitting diodes |
-
1997
- 1997-04-02 EP EP97908105A patent/EP0891686B1/fr not_active Expired - Lifetime
- 1997-04-02 WO PCT/CH1997/000133 patent/WO1997038558A1/fr active IP Right Grant
- 1997-04-02 US US09/155,579 patent/US6208074B1/en not_active Expired - Fee Related
- 1997-04-02 DE DE69700602T patent/DE69700602T2/de not_active Expired - Fee Related
- 1997-04-02 JP JP9535714A patent/JP2000508112A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE69700602T2 (de) | 2000-05-18 |
EP0891686A1 (fr) | 1999-01-20 |
US6208074B1 (en) | 2001-03-27 |
JP2000508112A (ja) | 2000-06-27 |
WO1997038558A1 (fr) | 1997-10-16 |
DE69700602D1 (de) | 1999-11-11 |
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