EP0870744B1 - Gas-tight article and a producing process thereof - Google Patents

Gas-tight article and a producing process thereof Download PDF

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Publication number
EP0870744B1
EP0870744B1 EP98302754A EP98302754A EP0870744B1 EP 0870744 B1 EP0870744 B1 EP 0870744B1 EP 98302754 A EP98302754 A EP 98302754A EP 98302754 A EP98302754 A EP 98302754A EP 0870744 B1 EP0870744 B1 EP 0870744B1
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EP
European Patent Office
Prior art keywords
silicon carbide
film
gas
sintered body
cracks
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EP98302754A
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German (de)
English (en)
French (fr)
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EP0870744A1 (en
Inventor
Masao Nishioka
Yasufumi Aihara
Keiichiro Watanabe
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00275—Materials impermeable to vapours or gases
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12007—Component of composite having metal continuous phase interengaged with nonmetal continuous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]

Definitions

  • the present invention relates to a gas-tight article and a process for producing the same.
  • a film of dense silicon carbide is effective as an oxidation resistive film to be formed on surfaces of ceramic members for use in high temperature atmosphere, such as liners for gas turbine parts and diesel engine parts. Further, it is known that surfaces of ceramic members are covered with thin films of dense silicon carbide in some uses such as a semiconductor-producing apparatus.
  • a chemical gas phase growing process, an electrochemical gas phase growing process, a sputtering process, a flame spraying process, etc. are known. For example, since a dense thin film having high purity and good quality can be formed by the gas phase process, this process is often used.
  • Gas-tight articles which are to be exposed to a reactive plasma gas, are demanded, for example, in the production of semiconductors.
  • a reactive plasma gas CF 4 , NF 3 , ClF 3 , HF, HCl, HBr, etc. may be recited, which are all highly corrosive.
  • Gas-tight articles which can maintain gas-tightness over a prolonged period of time under an environment where they are exposed to such a highly corrosive gas, have been demanded.
  • the present inventors made investigations to cope with the demand, and encountered problems. That is, in order to enable gas-tight articles to be used in, for example, a semiconductor producing apparatus over a prolonged time period, the thickness of the film of silicon carbide must be increased. Recently, the area of the semiconductor wafer is getting larger. Accordingly, in order to treat such a large size of the semiconductor wafer with for example low-pressure plasma, the large-area surface of the sintered body must be covered with a film of gas-tight silicon carbide.
  • EP-A-427 294 it is suggested to solve this problem by depositing onto a SiC substrate a SiC coating having a content of elemental Si which gradually decreases from the interface toward the outer surface.
  • the present invention relates to a gas-tight article comprising a sintered body composed mainly of silicon carbide, and a film of silicon carbide formed on a surface of the sintered body by chemical vapor deposition and covering said surface of the sintered body, wherein cracks are formed in the film of the silicon carbide, and the cracks are at least partly filled with metallic silicon.
  • the present invention also relates to a process for producing a gas-tight article, comprising the steps of preparing a sintered body composed mainly of silicon carbide, forming a film of silicon carbide on a surface of the sintered body by chemical vapor deposition such that the film of the silicon carbide covers the surface of the sintered body, forming cracks in the film of the silicon carbide, bringing metallic silicon into contact with the film of the silicon carbide, filling the cracks with the metallic silicon by heating the metallic silicon at not less than a melting point of the metallic silicon.
  • the present inventors formed films on silicon carbide sintered bodies having various shapes by the chemical vapor deposition, and examined their gas-tightness and durability against heat impact. As a result, the inventors reached the following knowledge.
  • a sintered body 2 has a disc-shaped form, and a film 4 of silicon carbide is formed on the surface 2a of the sintered body 2.
  • a chemical vapor deposition apparatus 5 as shown schematically in Fig. 2is used.
  • the apparatus 5 given heating heaters 6A, 6B and 6C are accommodated in a material constituting a furnace.
  • the sintered body 2 is fixed in the interior space of the furnace, and a reactive gas and a carrier gas are fed through a feed opening as shown by an arrow A, whereas the used reaction gas is discharged through an exhaust opening 9 as shown by an arrow B.
  • a reactive gas for example, silicon tetrachloride and methane may be used.
  • Fig. 3 schematically shows a typical schedule in which a line C represents a temperature line, and a line D does a reactive gas feed state, whereas a line E represents a carrier gas feed state.
  • the temperature is raised from a starting temperature, for example, room temperature, to a maximum temperature T 1 at which the chemical vapor deposition is effected (Heating step G).
  • the carrier gas is fed.
  • the temperature is kept at the maximum temperature T 1 , thereby heating the sintered body 2.
  • the chemical vapor deposition is effected, while the carrier gas and the reactive gas are being fed (Chemical vapor deposition step H).
  • a reaction: SiCl 4 + CH 4 ⁇ SiC + 4HCl occurs.
  • silicon carbide is formed, and heaped on the surface of the sintered body 2.
  • the reactive gas is contacted with the surface of the sintered body, and discharged outside the furnace as shown by the arrow B (Cooling step I). Thereafter, the sintered body and a film of silicon carbide are cooled (Cooling step I).
  • the reason why the film of silicon carbide is cracked by subjecting the gas-tight article 1 to heat impact and the heat cycle is considered to be that tensile stress acts in the film of silicon carbide owing to difference in expansion and shrinkage amounts between the film of silicon carbide and the sintered body.
  • the film of silicon carbide is more rapidly cooled than the sintered body, for example, during cooling, and tensile stress inevitably occurs in the film of silicon carbide at low temperatures.
  • the inventors formed cracks in a film of silicon carbide during the production of the silicon carbide film by the chemical vapor deposition, and then tried to fill the crack with metallic silicon.
  • metallic silicon was placed on or around the crack of the film of silicon carbide, and was melted by heating it at not less than the melting point of the metallic silicon.
  • the melt of the metallic silicon was sucked into the crack to completely fill the crack with the melt.
  • the silicon carbide film was cut in a crack-extending direction, and a cut face thereof was observed, which revealed that up to an end of the crack was completely filled with the metallic silicon.
  • the present inventors reached the present invention based on the above discovery.
  • the crack is already formed in the film of silicon carbide during the formation of the film, and residual stress is conspicuously mitigated. Since the coefficient of thermal expansion of metallic silicon is slightly smaller than that of silicon carbide, it is considered that compression stress can be developed upon silicon carbide after filling the crack with metallic silicon, so that tensile stress which would act upon the film of silicon carbide through exposure of the gas-tight article to heat impact and heat cycles can be offset. As a result, the gas-tightness of the film of silicon carbide can be maintained for a long time period even under the condition at which severe heat impact and heat cycles having not been considered are applied.
  • the gas-tight article according to the present invention withstands rapid heating and cooling, a speed in treating semiconductor wafers can be conspicuously increased when the gas-tight article is used in the semiconductor-producing apparatuses. Consequently, the power for the production of the semiconductors per unit time period can be largely enhanced.
  • the thickness of the film of silicon carbide is 0.5 mm or more, cracks are likely to be formed in the film of silicon carbide during cooling this film, so that gas tightness of the film of silicon carbide is spoiled.
  • the present invention can be solved by the present invention.
  • gas-tight articles according to the present invention is not limited to cases where the gas-tight articles are arranged inside the semiconductor producing apparatuses, but the gas-tight articles can be applied to gas-tight products required to have corrosion resistance and disliking contamination.
  • parts for chemical analyzers, high purity-corrosion chemical treating apparatuses, radioactive material-handling apparatuses, etc. may be recited.
  • the purity of the film of silicon carbide is preferably not less than 99.999 wt%, and that of metallic silicon is preferably more preferably not less than 99.999 wt%.
  • an electromagnetic wave-permeable window As parts to be arranged in the semiconductor producing apparatus, an electromagnetic wave-permeable window, a radio frequency electrode device, a radio frequency plasma generation tube, a radio frequency plasma generation dome, an electrostatic ceramic chuck, a ceramic heater, a dummy wafer, a shadow ring, a semiconductor wafer-supporting lift pin, a shower plate, etc. may be recited.
  • the gas-tight article 1 shown schematically in Fig. 1 is used as a cover for a location inside the semiconductor-producing apparatus which location is to be brought into contact with reactive plasma.
  • the inner surface of the film 4 of silicon carbide is exposed to plasma gas, whereas the outer peripheral edge side thereof is designed as a sealing face to keep the gas-tightness. Since the plasma is strongly corrosive, the anti-corrosive, high purity silicon carbide film 4 formed by the chemical vapor deposition is used.
  • promoting the formation of the cracks in the silicon carbide film can further enhance durability of the silicon carbide film.
  • the temperature of the silicon carbide is set higher than that of the sintered body during the formation of the silicon carbide film on the sintered body by the chemical vapor deposition.
  • the formation of the cracks in the silicon carbide film can be promoted by setting the temperature of the silicon carbide film lower than that of the sintered body during cooling in the chemical vapor deposition.
  • cooling the silicon carbide film can be promoted by flowing excess cooling gas on a side of the silicon carbide film during cooling in the chemical vapor deposition.
  • cooling the silicon carbide film can be promoted by arranging heating heaters at sides of the silicon carbide film and the sintered body, respectively, inside the chemical vapor deposition apparatus, and setting the temperature of the heating heater at the side of the silicon carbide film lower than that of the heater at the sintered body.
  • grooves are formed at that surface of the sintered body at which a film of silicon carbide is to be formed, a film of silicon carbide is form on this surface, and then cracks is formed in the silicon carbide film along the grooves.
  • a shaping member is arranged at a side of that surface of the sintered body at which a film of silicon carbide is to be formed, a film of silicon carbide is formed on this surface by chemical vapor deposition, then the shaping member is removed to form an opening in the silicon carbide, and a crack is formed, extending from the opening toward the sintered body.
  • the location in the silicon carbide film where the crack is formed can be specified and controlled. If the gas-tight article according to the present invention is exposed to a corrosive material such as plasma gas, the metallic silicon charged into the crack is more susceptible to corrosion than the silicon carbide film around it. In order to prevent cracks from being formed at a portion of the film to be brought into contact with corrosive material, according to the present invention, such cracks are selectively formed at a portion of the film to be subjected to no exposure with the corrosive material, for example, a portion of the film to constitute a sealing face.
  • a corrosive material such as plasma gas
  • the following may be recited as sintered bodies composed mainly of silicon carbide.
  • a gas-tight article was produced according to the process explained with reference to Figs. 1 to 3.
  • a disc-shaped sintered body composed of silicon carbide and having purity of not less than 99% and relative density of 98% with a diameter of 50 mm and a thickness of 15 mm was used, and a film 4 of silicon carbide was formed on a surface of the sintered body in a thickness of 0.5 mm by chemical vapor deposition. In this case, no crack was formed in the silicon carbide film.
  • Gas-tight articles were produced according to the process explained with reference to Figs. 1 to 3.
  • a sintered body composed of silicon carbide and having purity of not less than 99% and relative density of 98% was used.
  • the sintered body 2 had a diameter of 280 mm and a thickness of about 15 mm was used, and a film 4 of silicon carbide was formed on a surface 2a of the sintered body 2 in a thickness of 0.5 mm by chemical vapor deposition.
  • the T 1 in Fig. 3 was set at 1400°C.
  • the purity of the silicon carbide film 4 was not less than 99.999 wt%.
  • one of the gas-tight articles in which no cracks were formed in the silicon carbide film was subjected to the following heat impact test (heat impact test at 180°C). That is, the gas-tight member was placed and heated to 180°C in an electric furnace, and the gas-tight article was immersed and left for 20 minutes in water at room temperature. This heat impact test revealed that cracks 13 were formed in the silicon carbide film within the number of times of heat impacts of 20.
  • a leaking rate was around 10 -4 Torr . liter/sec.
  • a gas-tight article to be arranged in a semiconductor producing apparatus is required to have a leaking rate of around 10 -9 Torr . liter/sec., the gas-tight article obtained in the case cannot be applied for this use.
  • Fig. 5(a) shows the helium leaking amount measuring instrument 15, a left half portion and a right half portion being a front and sectional views thereof, respectively.
  • a gas-tight holding member 16 made of silicone rubber as a flat ring is arranged at an edge of the measuring instrument 15.
  • a vacuum flange 17 is attached to a side of the measuring instrument 15.
  • the helium gas leaking rate is measured in the state the gas-tight article is placed on the gas-tight holding member 16 on the measuring instrument 15, and helium gas inside the measuring instrument is sucked through a suction opening 17a of the vacuum flange 17 as shown by an arrow J.
  • the gas is sucked by a helium leakage detector not shown, which is to detect the amount of helium in the gas sucked.
  • the gas-tight article and the measuring instrument 15 are placed in helium gas at 1 atom. If the gas leaks through the gas-tight article, helium enters the measuring instrument, and is detected by the helium leakage detector.
  • cracks were formed in the silicon carbide film in each of the gas-tight articles in which the thickness of the silicon carbide film was set at 4 mm.
  • the number of the cracks varied depending upon individual gas-tight articles. When those gas-tight articles were subjected to the above heat impact test, the number of the cracks increased. Some of the gas-tight articles were broken.
  • gas-tight articles 1 were produced, provided that the thickness of a film of silicon carbide was set at 4 mm.
  • a film 18 of silicon carbide is formed on a surface of a sintered body 17, and cracks 13 having shapes as shown in Fig. 4 are formed in the silicon carbide film 18.
  • metallic silicon 20 having purity of 99.999 wt% is placed above the crack 13.
  • the gas-tight article was heated at 1500°C in reduced pressure atmosphere, and then cooled. In the heating treatment, the heating temperature is preferably not less than 1420°C to less than 1800°C.
  • Fig. 7 is a photograph of the surface of the silicon carbide film into which metallic silicon is filled.
  • the metallic silicon is melted, and a silver whitish line of the melted metallic silicon extends along the crack 13 in the silicon carbide film 18.
  • the metallic silicon 23 is sucked and filled in the crack 13 over its entire length.
  • Fig. 9 is a photograph of a ceramic microstructure when the thus obtained gas-tight article was cut and viewed in a crossing direction
  • Fig. 10 is an enlarged view of the photograph of the ceramic microstructure in Fig. 9 including a portion of the crack into which silicon is filled.
  • a space, the silicon carbide film and the sintered body appear.
  • the crack is completely filled with the metallic silicon after cooling.
  • the crack 13 extends from the surface of the silicon carbide film 18 to an interface between the film 18 and the sintered body 17, and the metallic silicon 22 is filled into the entire crack 13 as illustrated in Fig. 6(c).
  • a reference numeral 21 denotes the metallic silicon.
  • Careful observation of the crack in Fig. 9 reveals that a part of the crack extends up to closed pores in the sintered body beyond the interface between the sintered body and the silicon carbide film.
  • the metallic silicon is filled into the crack having a width of 5 to 30 ⁇ m such that the metallic silicon is also filled into the cracks inside the sintered body and the closed pores continuing to these cracks.
  • the enlarged photograph in Fig. 10 shows that as schematically shown in the illustrative view of Fig. 11, the crack 51A is formed in the microstructure 50 of silicon carbide, and the crack 51A has a complicated shape, and continues to cracks 51B and 51C, for example.
  • the metallic silicon 52 is filled into not only the crack 51A but also the cracks 51B and 51C.
  • the gas-tight article was subjected to 250 heat impacts in the same way as in Comparative Examples, and formation of new crack was not found after the heat impact test. Then, the surface of the silicon carbide film was polished with use of a #400 grinding stone. Measurement of a helium leaking rate of the resulting gas-tight article as in Comparative Examples exhibited no leak with 10 -9 Torr ⁇ liter/sec.
  • Gas-tight articles obtained according to Invention Examples 1 and 2 were subjected to 250°C heat impact tests. More specifically, the gas-tight article was placed and heated to 250°C in an electric furnace, and then the article was immersed in water at room temperature. The test revealed that cracks were sometimes formed in the silicon carbide film when the 250°C heat impacts were repeatedly applied at 20 times or more.
  • a film of silicon carbide was formed on a sintered body, and then subjected to a 180 heat impact test in the same way as in Comparative Examples, thereby forming cracks in the silicon carbide film. Then, the metallic silicon was filled into the cracks in the same way as in Invention Example 1.
  • This gas-tight article was subjected to a 250°C heat impact test. More specifically, the gas-tight article was placed and heated to 250°C in an electric furnace, and then the article was immersed in water at room temperature. Formation of new cracks was not found in the silicon carbide film after the 250°C heat impact test. Measurement of a helium leaking rate of the resulting gas-tight article as in Comparative Examples exhibited no leak with 10 -9 Torr . liter/sec retained.
  • a film of silicon carbide was formed on a sintered body in the same way as in Comparative Examples.
  • a cooling step I after the formation of the silicon carbide film by chemical vapor deposition, the temperature of a heating heater at a side where the silicon carbide film was to be vapor deposited was set lower as indicated by a line L, whereas that of a heating heater at a side where no silicon carbide film was to be formed was set higher as indicated by a line K.
  • ⁇ T is a difference in temperature between these heaters. In this example, the maximum temperature difference ⁇ T was adjusted to 150°C.
  • a film of silicon carbide was formed on a sintered body in the same way as in Comparative Examples.
  • a flow rate of a carrier gas in a cooling step I after the formation of the silicon carbide by chemical vapor deposition was set greater than in a film-forming step H.
  • a carrier gas was flown on a side of the silicon carbide film at a flow rate being 3 to 5 times as much as in Comparative Examples 3-5.
  • D is the amount of the reaction gas
  • E the amount of the carrier gas.
  • D 0, and E is 3 to 5 times as much as that in the step H.
  • C is the temperature.
  • radially extending grooves 33 were formed at an outer peripheral portion of a sintered body 30.
  • the locations and the numbers of the grooves are appropriately selected.
  • Each groove 33 extends from the outer peripheral face 30a toward the inner peripheral portion of the sintered body 30.
  • a film of silicon carbide was formed in the same way as in Invention Example 1, and each of cracks was filled with metallic silicon in the same way as in Invention Example 1, thereby obtaining a gas-tight article 34 as shown in Figs. 15(a) and 15(b).
  • the silicon carbide film 35 is formed on a surface of the sintered body 30. Since tensile stress is applied to particularly around corners 36 of the grooves 33 in the silicon carbide film 35, cracks 31 are formed substantially along the grooves 33. The cracks 31 are filled with the metallic silicon.
  • a shaping member 41 made of such as carbon was opposed to and fixed above a surface of an outer peripheral portion 40a of a sintered body 40.
  • a tip portion 41a of the shaping member 41 had a blade-shaped form.
  • the shaping member 41 was fixed at a location for the formation of a crack in a film of silicon carbide. More specifically, the location of setting the planar shaping member was aligned with the location of a groove 33 to be formed.
  • a film of silicon carbide was formed in the same manner as in Invention Example 1.
  • a film 42A of silicon carbide was formed on the surface 40a, but also a film 42B of silicon carbide was formed to cover the shaping member 41.
  • the shaping member 41 made of carbon was removed along a line M by the sand blasting method, thereby obtaining a film 42C of silicon carbide having a shape as shown in Fig. 16(c).
  • the shaping member 41 made of graphite was removed by sand blasting.
  • an opening 48 and a crack 45 extending under the opening 48 are formed in the silicon carbide film 47, and the opening 48 and the crack 45 are filled with metallic silicon 49.
  • the gas-tight article which comprises the sintered body composed mainly of silicon carbide and a film of silicon carbide formed on a surface of the sintered body by the chemical vapor deposition and covering that surface and which has high gas tightness and corrosion resistance and maintain gas tightness even under application of heat impact and heat cycles.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
EP98302754A 1997-04-09 1998-04-08 Gas-tight article and a producing process thereof Expired - Lifetime EP0870744B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9105400A JPH10287483A (ja) 1997-04-09 1997-04-09 気密部品およびその製造方法
JP105400/97 1997-04-09
JP10540097 1997-04-09

Publications (2)

Publication Number Publication Date
EP0870744A1 EP0870744A1 (en) 1998-10-14
EP0870744B1 true EP0870744B1 (en) 1999-11-17

Family

ID=14406591

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98302754A Expired - Lifetime EP0870744B1 (en) 1997-04-09 1998-04-08 Gas-tight article and a producing process thereof

Country Status (6)

Country Link
US (1) US6063514A (ko)
EP (1) EP0870744B1 (ko)
JP (1) JPH10287483A (ko)
KR (1) KR100285355B1 (ko)
DE (1) DE69800040T2 (ko)
TW (1) TW382742B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030200963A1 (en) * 1998-01-09 2003-10-30 Flament-Garcia Mary Jane Container for an inhalation anesthetic
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
JP4925152B2 (ja) * 2000-01-21 2012-04-25 イビデン株式会社 半導体製造装置用部品及び半導体製造装置
JP2001253777A (ja) * 2000-03-13 2001-09-18 Ibiden Co Ltd セラミック基板
JP3516392B2 (ja) * 2000-06-16 2004-04-05 イビデン株式会社 半導体製造・検査装置用ホットプレート
DE10145724A1 (de) * 2001-09-17 2003-04-10 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiterstruktur unter Verwendung einer Schutzschicht und Halbleiterstruktur
JP4321855B2 (ja) * 2003-12-11 2009-08-26 日本碍子株式会社 セラミックチャック
WO2008128080A2 (en) * 2007-04-13 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic dissipative stage for use in forming lcd products
US20080257380A1 (en) * 2007-04-16 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Process of cleaning a substrate for microelectronic applications including directing mechanical energy through a fluid bath and apparatus of same
US8347479B2 (en) * 2009-08-04 2013-01-08 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method for repairing cracks in structures
US9701072B2 (en) * 2013-10-30 2017-07-11 General Electric Company Methods of repairing matrix cracks in melt infiltrated ceramic matrix composites
US10403509B2 (en) * 2014-04-04 2019-09-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing

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US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
US4795673A (en) * 1978-01-09 1989-01-03 Stemcor Corporation Composite material of discontinuous silicon carbide particles and continuous silicon matrix and method of producing same
JPH03153876A (ja) * 1989-11-10 1991-07-01 Shin Etsu Chem Co Ltd 炭化珪素質部材
US5589116A (en) * 1991-07-18 1996-12-31 Sumitomo Metal Industries, Ltd. Process for preparing a silicon carbide sintered body for use in semiconductor equipment
JP3583812B2 (ja) * 1994-09-05 2004-11-04 東京電力株式会社 セラミックコーティング部材とその製造方法
US5628938A (en) * 1994-11-18 1997-05-13 General Electric Company Method of making a ceramic composite by infiltration of a ceramic preform
JP2000513689A (ja) * 1995-03-01 2000-10-17 サン−ゴバン／ノートン インダストリアル セラミックス コーポレイション 新規なシリコンカーバイドダミーウエハー
US5882807A (en) * 1995-12-26 1999-03-16 Asahi Glass Company, Ltd Jig for heat treatment and process for fabricating the jig

Also Published As

Publication number Publication date
KR100285355B1 (ko) 2001-04-02
TW382742B (en) 2000-02-21
JPH10287483A (ja) 1998-10-27
EP0870744A1 (en) 1998-10-14
DE69800040T2 (de) 2000-05-04
DE69800040D1 (de) 1999-12-23
KR19980081064A (ko) 1998-11-25
US6063514A (en) 2000-05-16

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