DE69800040D1 - Gasdichter Körper und Verfahren zu dessen Herstellung - Google Patents

Gasdichter Körper und Verfahren zu dessen Herstellung

Info

Publication number
DE69800040D1
DE69800040D1 DE69800040T DE69800040T DE69800040D1 DE 69800040 D1 DE69800040 D1 DE 69800040D1 DE 69800040 T DE69800040 T DE 69800040T DE 69800040 T DE69800040 T DE 69800040T DE 69800040 D1 DE69800040 D1 DE 69800040D1
Authority
DE
Germany
Prior art keywords
gas
production
tight body
tight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69800040T
Other languages
English (en)
Other versions
DE69800040T2 (de
Inventor
Masao Nishioka
Yasufumi Aihara
Keiichiro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE69800040D1 publication Critical patent/DE69800040D1/de
Publication of DE69800040T2 publication Critical patent/DE69800040T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00275—Materials impermeable to vapours or gases
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12007—Component of composite having metal continuous phase interengaged with nonmetal continuous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
DE69800040T 1997-04-09 1998-04-08 Gasdichter Körper und Verfahren zu dessen Herstellung Expired - Fee Related DE69800040T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9105400A JPH10287483A (ja) 1997-04-09 1997-04-09 気密部品およびその製造方法

Publications (2)

Publication Number Publication Date
DE69800040D1 true DE69800040D1 (de) 1999-12-23
DE69800040T2 DE69800040T2 (de) 2000-05-04

Family

ID=14406591

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800040T Expired - Fee Related DE69800040T2 (de) 1997-04-09 1998-04-08 Gasdichter Körper und Verfahren zu dessen Herstellung

Country Status (6)

Country Link
US (1) US6063514A (de)
EP (1) EP0870744B1 (de)
JP (1) JPH10287483A (de)
KR (1) KR100285355B1 (de)
DE (1) DE69800040T2 (de)
TW (1) TW382742B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030200963A1 (en) * 1998-01-09 2003-10-30 Flament-Garcia Mary Jane Container for an inhalation anesthetic
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
JP4925152B2 (ja) * 2000-01-21 2012-04-25 イビデン株式会社 半導体製造装置用部品及び半導体製造装置
JP2001253777A (ja) * 2000-03-13 2001-09-18 Ibiden Co Ltd セラミック基板
JP3516392B2 (ja) * 2000-06-16 2004-04-05 イビデン株式会社 半導体製造・検査装置用ホットプレート
DE10145724A1 (de) * 2001-09-17 2003-04-10 Infineon Technologies Ag Verfahren zum Herstellen einer Halbleiterstruktur unter Verwendung einer Schutzschicht und Halbleiterstruktur
JP4321855B2 (ja) * 2003-12-11 2009-08-26 日本碍子株式会社 セラミックチャック
WO2008128080A2 (en) * 2007-04-13 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic dissipative stage for use in forming lcd products
US20080257380A1 (en) * 2007-04-16 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Process of cleaning a substrate for microelectronic applications including directing mechanical energy through a fluid bath and apparatus of same
US8347479B2 (en) * 2009-08-04 2013-01-08 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method for repairing cracks in structures
US9701072B2 (en) * 2013-10-30 2017-07-11 General Electric Company Methods of repairing matrix cracks in melt infiltrated ceramic matrix composites
US10403509B2 (en) * 2014-04-04 2019-09-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
US4795673A (en) * 1978-01-09 1989-01-03 Stemcor Corporation Composite material of discontinuous silicon carbide particles and continuous silicon matrix and method of producing same
JPH03153876A (ja) * 1989-11-10 1991-07-01 Shin Etsu Chem Co Ltd 炭化珪素質部材
US5589116A (en) * 1991-07-18 1996-12-31 Sumitomo Metal Industries, Ltd. Process for preparing a silicon carbide sintered body for use in semiconductor equipment
JP3583812B2 (ja) * 1994-09-05 2004-11-04 東京電力株式会社 セラミックコーティング部材とその製造方法
US5628938A (en) * 1994-11-18 1997-05-13 General Electric Company Method of making a ceramic composite by infiltration of a ceramic preform
JP2000513689A (ja) * 1995-03-01 2000-10-17 サン−ゴバン／ノートン インダストリアル セラミックス コーポレイション 新規なシリコンカーバイドダミーウエハー
US5882807A (en) * 1995-12-26 1999-03-16 Asahi Glass Company, Ltd Jig for heat treatment and process for fabricating the jig

Also Published As

Publication number Publication date
KR100285355B1 (ko) 2001-04-02
TW382742B (en) 2000-02-21
JPH10287483A (ja) 1998-10-27
EP0870744A1 (de) 1998-10-14
DE69800040T2 (de) 2000-05-04
KR19980081064A (ko) 1998-11-25
EP0870744B1 (de) 1999-11-17
US6063514A (en) 2000-05-16

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee