EP0869102B1 - Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell - Google Patents

Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell Download PDF

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Publication number
EP0869102B1
EP0869102B1 EP96933633A EP96933633A EP0869102B1 EP 0869102 B1 EP0869102 B1 EP 0869102B1 EP 96933633 A EP96933633 A EP 96933633A EP 96933633 A EP96933633 A EP 96933633A EP 0869102 B1 EP0869102 B1 EP 0869102B1
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EP
European Patent Office
Prior art keywords
melt
silicon
ingot
process according
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
EP96933633A
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German (de)
English (en)
French (fr)
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EP0869102A4 (en
EP0869102A1 (en
Inventor
Fukuo Technical Research Laboratories ARATANI
Yoshiei Technical Research Laboratories KATO
Yasuhiko Technical Research Lab. SAKAGUCHI
Noriyoshi Technical Research Lab. YUGE
Hiroyuki Technical Research Lab. BABA
Naomichi Technical Research Lab. NAKAMURA
Kazuhiro Technical Research Lab. HANAZAWA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
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Kawasaki Steel Corp
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Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority claimed from CA002211028A external-priority patent/CA2211028C/en
Publication of EP0869102A1 publication Critical patent/EP0869102A1/en
Publication of EP0869102A4 publication Critical patent/EP0869102A4/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This invention relates to a process and apparatus for manufacturing polycrystalline silicon and a process for manufacturing a silicon wafer for a solar cell.
  • this invention pertains to a technique which employs metallic silicon or silicon oxide as a starting material and permits the continuous flow production from polycrystalline silicon to an end product, that is, a polycrystalline silicon wafer for a solar cell.
  • the residue is reacted with a hydrogen gas, whereby high-purity silicon is precipitated from the gas by the so-called CVD (Chemical Vapor Deposition) method.
  • the high-purity silicon therefore becomes only an aggregate of silicon grains owing to the weak bonding power between crystal grains.
  • the boron contained in the high-purity silicon forming the aggregate is reduced even in the order of 0.001 ppm and does not reach the concentration necessary for satisfying the specific resistivity of 0.5 to 1.5 ohm ⁇ cm which is the specification for P-type semiconductor wafer.
  • Japanese Published Unexamined Patent Application No. SHO 62-252393 discloses a process in which a starting material silicon, which is once used as a semiconductor but disposed as an electron industry waste, is subjected to zone melting by plasma jet generated by a mixed gas of argon, hydrogen and oxygen. This process aims principally at the use of an industrial waste so that it does not become a mainly-employed technique suited for mass production of a silicon wafer.
  • silicon is used as a raw material, its purity has been once increased so that the process is only a variation of the above-described cumbersome manufacturing process.
  • the inventors of the present invention have carried out an extensive investigation, paying attention to obtaining the maximum economic effects without using a chemical process but only a metallurgical process, leading to the completion of the present invention.
  • a process for the preparation of polycrystalline silicon which comprises setting a phosphorus concentration of the melt at 0.3 ppm or less and a boron concentration at 0.6 ppm or less or a carbon concentration at 10 ppm or less.
  • the present invention also relates to an apparatus for manufacturing polycrystalline silicon.
  • an apparatus for manufacturing polycrystalline silicon which comprises heating means for melting or heating metallic-grade silicon, a retaining container for retaining molten metallic silicon, a first directional solidification mold in which the melt is cast from the retaining container, a vacuum chamber for removing phosphorus by evaporation, said chamber surrounding the retaining container and the first mold, re-melting means for re-melting or heating a portion of the ingot from the first mold, a smelting container for retaining the re-melt, a nozzle for blowing or spraying an oxidizing gas, hydrogen gas or a mixed gas of hydrogen and argon to the re-melt in the smelting container and a second directional solidification mold for forming the deoxidized re-melt into a cast ingot.
  • an apparatus for manufacturing polycrystalline silicon wherein the pressure in the above-described vacuum chamber is set at 1.33Pa (10 -3 torr) or lower, the retaining container is a water-cooling jacket made of copper or a graphite crucible; and the smelting container is a crucible made of SiO 2 , or an SiO 2 lined crucible.
  • thermoforming means is an electron gun; or the above-described re-melting means is a plasma torch or a DC arc source.
  • an apparatus for the preparation of polycrystalline silicon wherein the above-described first and second molds have side walls formed of a heat insulating material and have a bottom formed of a water cooling jacket; and a heating source for heating the cast melt is disposed above the molds; or a W/H ratio, that is, the ratio of the diameter W to the height H of said mold is set at greater than 0.5.
  • a process for the manufacture of a silicon wafer for a solar cell which comprises slicing an ingot of polycrystalline silicon, which has been obtained by any one of the above-described processes, to a thickness of 100 to 450 ⁇ m.
  • polycrystalline silicon or a silicon wafer for a solar cell is manufactured by any one of the above-described methods or apparatuses so that the component adjustment of high-purity silicon, which is indispensable in the conventional method, is not required.
  • the present invention also makes it possible to reduce the unnecessary consumption of energy. Since not a chemical process which is characterized by the generation of a large amount of pollutants but only a metallurgical process is adopted, the present invention makes it possible to enlarge the production equipment. As a result, a silicon wafer for a solar cell having excellent photoelectric transfer efficiency can be provided at a cost by far lower than the conventional one.
  • polycrystalline silicon obtained by the enforcement of the present invention can be used effectively not only for the manufacture of a wafer but also for the use as a raw material for iron manufacture or the like.
  • FIG. 1 one embodiment of the manufacturing process of polycrystalline silicon and a silicon wafer for a solar cell according to the present invention is shown together in one flow chart (manufacture of the wafer is shown, enclosed with a dotted line).
  • metallic silicon having a relatively low purity (99.5 wt.% Si) is charged in a retaining container made of graphite or a water-cooling retaining container made of copper and then melted under vacuum.
  • heating may be conducted making use of the methods known to date such as gas heating or electric heating, with heating by an electron gun being most preferred.
  • the metallic silicon so melted is maintained for a predetermined time (for example, 30 to 60 minutes) in the above retaining container at a temperature not lower than 1450° C but not higher than 1900° C, whereby phosphorus and aluminum, among impurity elements contained in the melt, are removed by evaporation (vacuum smelting). It is preferred that the phosphorus concentration in the melt is 0.3 ppm or less.
  • the melt is cast into a first cast and is cooled upwardly from the bottom so that the moving rate of solidification interface will be 5 mm/min. As a result, an ingot in which the melt having concentrated impurity elements has been solidified last is obtained.
  • the upper 30% portion of the ingot having the concentrated impurity elements therein is removed by cutting.
  • the remaining portion of the ingot is charged in a melt furnace equipped with, for example, a plasma arc, whereby the ingot is re-melted.
  • the heating means is not limited to the plasma arc.
  • the melt is heated to a temperature not lower than 1450 ° C and at the same time is reacted with an oxidizing gas atmosphere, whereby boron and carbon are removed from the melt as oxides (oxidative smelting).
  • an argon gas or a mixed gas of argon and hydrogen is blown into the melt for a predetermined time.
  • oxygen in the melt is deoxidized to the level not higher than 10 ppm.
  • the above-described oxidative smelting may be carried out either in a vacuum chamber or in the air.
  • the deoxidized melt is then cast into a second mold coated with a mold releasing agent, followed by directional solidification, whereby a final ingot is obtained.
  • Impurity elements exist in the concentrated form in the upper portion of the ingot so that the portion (generally, 20% or so) is removed by cutting and the remaining portion is provided as a product of polycrystalline silicon.
  • Metallic-grade silicon which is a starting material, is generally available by reductive smelting of silicon oxide so that the use of silicon oxide as a starting material is also added to the present invention.
  • Any known methods can be employed to smelt silicon oxide into that having a purity on the same level with that of the metallic-grade silicon used in the first step of the present invention.
  • silicon oxide is melted and reduced by using a carboneous material as a reducing agent.
  • this process makes it possible to omit some of the apparatuses and brings about effects for reducing energy consumption, whereby polycrystalline silicon and a silicon wafer for a solar cell on the same level with those obtained by the above-described process of the present invention are available at a lower cost.
  • boron and carbon removal is conducted by those who prepare metallic silicon, operations subsequent to it can be carried out more easily by the manufacturer of polycrystalline silicon or wafer.
  • the reason for setting the moving rate of the solidification interface at 5 mm/min or lower in the case of the first mold and at 2 mm/min in the case of the second mold is because moving rates higher than the above disturb sufficient concentration of impurity metal elements in the upper part of the ingot.
  • the reason for cutting the ingot at a height not lower than 70% from the bottom of the ingot is because the target composition as polycrystalline silicon can be attained at the remaining lower portion.
  • the degree of vacuum in the vacuum chamber is set at 10-3 torr or higher because it is suited for phosphorus removal by evaporation judging from the vapor pressure of phosphorus in metallic silicon.
  • the phosphorus concentration of the melt is set at 0.3 ppm or lower in order to secure stable operation of solar cells, while the boron concentration of the melt is set at 0.6 ppm or lower in order to obtain polycrystalline silicon suited for a P-type semiconductor wafer.
  • the carbon concentration set at 10 ppm or lower makes it possible to suppress the precipitation of SiC in silicon crystals, thereby preventing the lowering in the photoelectric transfer efficiency.
  • a copper-made water-cooling jacket or a graphite crucible is employed as the above-described retaining container upon melting of metallic silicon and an SiO 2 crucible or SiO 2 stamped or lined crucible is used as the above-described smelting container, because silicon tends to react with other substances and when a crucible made of another substance is used, component elements of the substance is mixed in silicon.
  • inexpensive Al 2 O 3 , MgO, graphite or the like can be employed for the lining of the refractory, because if impurities are mixed in, they can be removed at the subsequent step.
  • the mold releasing agent of the mold used for solidification is specified to SiO 2 or Si 3 N 4 because of the same reason. Since the molten silicon expands by 10% in volume when solidified, the mold releasing agent is necessary for preventing the stress from remaining on the ingot.
  • an apparatus according to the present invention is constructed so that as shown in FIG. 2, the melt 2 of metallic-grade silicon 1 flows to the subsequent stage almost continuously except at the time of solidification.
  • This structure makes it possible to carry out preparation smoothly and to shorten the operation time, leading to the reduction in the manufacturing cost.
  • the apparatuses used in the present invention are operated based on only the metallurgical process, they can be enlarged considerably and are free from generation of pollutants. Cost reduction by mass production can also be expected.
  • the oxidizing atmosphere for the removal of boron and carbon from the melt 2 is not required to have high acidifying power.
  • Preferred as the oxidizing gas is H 2 O or CO 2 .
  • acidifying power is high, an SiO 2 film is formed on the surface of the melt, which hinders the removal of boron and CO 2 .
  • injection of arc from a plasma torch 4 or DC arc source is necessary for the removal of such a film.
  • the above-described oxidizing gas may be blown directly into the melt.
  • the material of a nozzle 5 from which the oxidizing gas is blown is limited to graphite or SiO 2 , because other materials contaminate the melt 2.
  • a known multi-wire saw or multi-blade saw can be used without problems.
  • the reason why the thickness of the thin plate is set at 100 to 450 ⁇ m is because the plate is too weak at the thickness less than 100 ⁇ m, while it has lowered photoelectric transfer efficiency at the thickness exceeding 450 ⁇ m.
  • an electron gun 3 of 300 KW in output was installed on the upper part of a vacuum chamber 18.
  • Metallic-grade silicon 1 was fed to a retaining container 19 (which is also called a melting furnace) made of graphite at 10 kg/hour and was melted. At this time, the degree of vacuum in the vacuum chamber 18 was 10 -5 torr. From the melt 2, a portion of phosphorus and aluminum elements were evaporated and removed. The remaining melt 2 was then cast into a water-cooling type copper-made mold 9. While the surface of the melt was exposed to electron beam 3 to maintain the molten state, the melt was solidified from the bottom at a solidification interface moving rate of 1 mm/min, whereby 50 kg of an ingot 6 were obtained.
  • the upper 20% portion of the ingot 6 (the portion A) was removed by cutting to obtain an ingot having a chemical composition as shown in Table 1.
  • the processes for manufacturing polycrystalline silicon and polycrystalline silicon wafers for solar cells according to the present invention are free from the source-wise problem (in other words, shortage in raw materials does not occur), do not by-produce pollutants and are essentially suited to the scale up of the equipment and mass production because of a metallurgical technique employed. It is therefore possible to supply wafers stably even if the demand for solar cells will increase by several hundred times in future.
  • about 20 wt.% of losses and inferior products appear as a result of pulverization or the like.
  • Continuous and consistent manufacture from silicon to wafers according to the present invention reduces losses, whereby electricity and energy can be used effectively.
  • the price of the silicon wafer available in the enforcement of the present invention can be reduced to half of that of the conventional product, which makes it possible to allow the solar cell to function economically as an electricity generating apparatus.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
EP96933633A 1996-10-14 1996-10-14 Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell Revoked EP0869102B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP1996/002965 WO1998016466A1 (fr) 1996-10-14 1996-10-14 Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
CA002211028A CA2211028C (en) 1996-10-14 1996-10-14 Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
NO974454A NO974454L (no) 1996-10-14 1997-09-26 FremgangsmÕte og anordning for fremstilling av polykrystallinsk silisium og fremgangsmÕte ved fremstilling av silisiumplater for solceller

Publications (3)

Publication Number Publication Date
EP0869102A1 EP0869102A1 (en) 1998-10-07
EP0869102A4 EP0869102A4 (en) 1998-12-23
EP0869102B1 true EP0869102B1 (en) 2002-05-22

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EP96933633A Revoked EP0869102B1 (en) 1996-10-14 1996-10-14 Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell

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EP (1) EP0869102B1 (ja)
WO (1) WO1998016466A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006027273B3 (de) * 2006-06-09 2007-10-25 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
DE102008031388A1 (de) 2008-07-02 2010-01-07 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
DE102008033122A1 (de) 2008-07-15 2010-01-21 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
CN101311343B (zh) * 2008-02-26 2010-12-08 上海晨安电炉制造有限公司 一种适于制造大尺寸高纯度多晶硅铸锭的真空炉
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
CN103318893A (zh) * 2013-06-19 2013-09-25 青岛隆盛晶硅科技有限公司 多晶硅旋转凝固分离杂质的方法

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JP3885452B2 (ja) 1999-04-30 2007-02-21 三菱マテリアル株式会社 結晶シリコンの製造方法
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
JP4154446B2 (ja) * 2005-02-28 2008-09-24 京セラ株式会社 多結晶シリコン基板の製造方法、光電変換素子の製造方法及び光電変換モジュールの製造方法
WO2006093099A1 (ja) * 2005-02-28 2006-09-08 Kyocera Corporation 多結晶シリコン基板、多結晶シリコンインゴット及びそれらの製造方法、光電変換素子、並びに光電変換モジュール
JP4947455B2 (ja) * 2005-08-16 2012-06-06 則近 山内 電子ビームを用いたシリコンの精錬方法及び装置
AU2007234343B2 (en) * 2006-04-04 2011-10-06 Calisolar Canada Inc. Method for purifying silicon
US7682585B2 (en) 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
JP5097427B2 (ja) * 2007-03-30 2012-12-12 株式会社アドマテックス 金属ケイ素粉末の製造方法、球状シリカ粉末の製造方法及び樹脂組成物の製造方法
CN101855391B (zh) 2007-10-03 2014-10-29 希里科材料公司 用于处理硅粉末来获得硅晶体的方法
JP5125973B2 (ja) * 2007-10-17 2013-01-23 住友化学株式会社 精製シリコンの製造方法
WO2010013484A1 (ja) 2008-08-01 2010-02-04 株式会社アルバック 金属の精製方法
KR101318239B1 (ko) 2008-08-12 2013-10-15 가부시키가이샤 아루박 실리콘의 정제 방법
DE102009014562A1 (de) 2009-03-16 2010-09-23 Schmid Silicon Technology Gmbh Aufreinigung von metallurgischem Silizium
JP5275110B2 (ja) * 2009-03-30 2013-08-28 コスモ石油株式会社 多結晶シリコンインゴットの製造方法
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
TWI397617B (zh) * 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
KR101222175B1 (ko) * 2011-03-31 2013-01-14 연세대학교 산학협력단 슬래그와 실리콘의 밀도차이를 이용한 ＭＧ－Ｓｉ중 불순물의 정련 방법

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DE3210141A1 (de) * 1982-03-19 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer insbesondere solarzellen verwendbarem silicium
JPS61232295A (ja) * 1985-04-08 1986-10-16 Osaka Titanium Seizo Kk シリコン結晶半導体の製造法
JPS62260710A (ja) * 1986-05-06 1987-11-13 Osaka Titanium Seizo Kk 多結晶シリコン半導体鋳造法
DE4018967A1 (de) * 1990-06-13 1991-12-19 Wacker Chemitronic Verfahren und vorrichtung zum giessen von siliciumbloecken mit kolumnarstruktur als grundmaterial fuer solarzellen
JP3000109B2 (ja) * 1990-09-20 2000-01-17 株式会社住友シチックス尼崎 高純度シリコン鋳塊の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
DE102006027273B3 (de) * 2006-06-09 2007-10-25 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
CN101311343B (zh) * 2008-02-26 2010-12-08 上海晨安电炉制造有限公司 一种适于制造大尺寸高纯度多晶硅铸锭的真空炉
DE102008031388A1 (de) 2008-07-02 2010-01-07 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
DE102008033122A1 (de) 2008-07-15 2010-01-21 Adensis Gmbh Verfahren zur Gewinnung von Reinstsilizium
CN103318893A (zh) * 2013-06-19 2013-09-25 青岛隆盛晶硅科技有限公司 多晶硅旋转凝固分离杂质的方法

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Publication number Publication date
EP0869102A4 (en) 1998-12-23
EP0869102A1 (en) 1998-10-07
WO1998016466A1 (fr) 1998-04-23

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