EP0809169A3 - Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials - Google Patents

Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials Download PDF

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Publication number
EP0809169A3
EP0809169A3 EP97107599A EP97107599A EP0809169A3 EP 0809169 A3 EP0809169 A3 EP 0809169A3 EP 97107599 A EP97107599 A EP 97107599A EP 97107599 A EP97107599 A EP 97107599A EP 0809169 A3 EP0809169 A3 EP 0809169A3
Authority
EP
European Patent Office
Prior art keywords
transistor
transistors
emitter
collector
und
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97107599A
Other languages
English (en)
French (fr)
Other versions
EP0809169B1 (de
EP0809169A2 (de
Inventor
Stephan Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0809169A2 publication Critical patent/EP0809169A2/de
Publication of EP0809169A3 publication Critical patent/EP0809169A3/de
Application granted granted Critical
Publication of EP0809169B1 publication Critical patent/EP0809169B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Abstract

Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials mit einem ersten Transistor (T1), dessen Emitter mit einem Bezugspotential (M) verbunden ist und dessen Basis und Kollektor miteinander verschaltet sind,
  • mit einem zweiten Transistor (T2), dessen Basis mit der Basis des ersten Transistors (T1) verbunden ist,
  • mit einem ersten Widerstand (R1), der zwischen den Kollektor des ersten Transistors (T1) und einen Ausgangsanschluß (U) zum Abgreifen des Referenzpotentials geschaltet ist,
  • mit einem zweiten Widerstand (R2), der zwischen den Kollektor des zweiten Transistors (T2) und den Ausgangsanschluß (U) geschaltet ist,
  • mit einem dritten Widerstand (R3), der zwischen Emitter des zweiten Transistors (T2) und das Bezugspotential (M) geschaltet ist,
  • mit einem dritten Transistor (T3), dessen Basis mit dem Kollektor des zweiten Transistors (T2) und dessen Emitter mit dem Bezugspotential (M) verbunden ist, und
  • mit einer gesteuerten Stromquelle (T4), die zwischen ein Versorgungspotential (V) und den Ausgangsanschluß (U) geschaltet ist und die eingangsseitig mit dem Kollektor des dritten Transistors (T3) gekoppelt ist, wobei der Kollektor-Emitter-Strecke des dritten Transistors (T3) die Kollektor-Emitter-Strecke eines fünften Transistors (T5) parallel geschaltet ist und daß die Basis des fünften Transistors (T5) durch ein Schaltsignal (S) angesteuert wird.
    • Figure 00000001
    EP97107599A 1996-05-24 1997-05-05 Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials Expired - Lifetime EP0809169B1 (de)

    Applications Claiming Priority (2)

    Application Number Priority Date Filing Date Title
    DE19621110 1996-05-24
    DE19621110A DE19621110C1 (de) 1996-05-24 1996-05-24 Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials

    Publications (3)

    Publication Number Publication Date
    EP0809169A2 EP0809169A2 (de) 1997-11-26
    EP0809169A3 true EP0809169A3 (de) 1998-12-09
    EP0809169B1 EP0809169B1 (de) 2000-08-09

    Family

    ID=7795317

    Family Applications (1)

    Application Number Title Priority Date Filing Date
    EP97107599A Expired - Lifetime EP0809169B1 (de) 1996-05-24 1997-05-05 Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials

    Country Status (4)

    Country Link
    US (1) US5801582A (de)
    EP (1) EP0809169B1 (de)
    DE (2) DE19621110C1 (de)
    IN (1) IN191847B (de)

    Families Citing this family (5)

    * Cited by examiner, † Cited by third party
    Publication number Priority date Publication date Assignee Title
    DE19624676C1 (de) * 1996-06-20 1997-10-02 Siemens Ag Schaltungsanordnung zur Erzeugung eines Referenzpotentials
    JP4116133B2 (ja) * 1997-07-31 2008-07-09 株式会社東芝 温度依存型定電流発生回路およびこれを用いた光半導体素子の駆動回路
    US6097179A (en) * 1999-03-08 2000-08-01 Texas Instruments Incorporated Temperature compensating compact voltage regulator for integrated circuit device
    JP4212036B2 (ja) * 2003-06-19 2009-01-21 ローム株式会社 定電圧発生器
    EP1501001A1 (de) * 2003-07-22 2005-01-26 STMicroelectronics Limited Vorspannungsschaltung

    Citations (5)

    * Cited by examiner, † Cited by third party
    Publication number Priority date Publication date Assignee Title
    EP0396996A2 (de) * 1989-05-08 1990-11-14 National Semiconductor Corporation Bandlückenschwellenschaltung mit Hysteresis
    EP0411657A1 (de) * 1989-08-03 1991-02-06 Kabushiki Kaisha Toshiba Konstantspannungsschaltung
    US5049806A (en) * 1988-12-28 1991-09-17 Kabushiki Kaisha Toshiba Band-gap type voltage generating circuit for an ECL circuit
    JPH06131068A (ja) * 1992-10-20 1994-05-13 Fujitsu Ltd 定電圧回路
    US5430395A (en) * 1992-03-02 1995-07-04 Texas Instruments Incorporated Temperature compensated constant-voltage circuit and temperature compensated constant-current circuit

    Family Cites Families (4)

    * Cited by examiner, † Cited by third party
    Publication number Priority date Publication date Assignee Title
    US5278491A (en) * 1989-08-03 1994-01-11 Kabushiki Kaisha Toshiba Constant voltage circuit
    JP3381937B2 (ja) * 1992-05-22 2003-03-04 株式会社東芝 中間電位発生回路
    FR2711258A1 (fr) * 1993-10-13 1995-04-21 Philips Composants Circuit générateur de tension stabilisée du type bandgap.
    US5703476A (en) * 1995-06-30 1997-12-30 Sgs-Thomson Microelectronics, S.R.L. Reference voltage generator, having a double slope temperature characteristic, for a voltage regulator of an automotive alternator

    Patent Citations (5)

    * Cited by examiner, † Cited by third party
    Publication number Priority date Publication date Assignee Title
    US5049806A (en) * 1988-12-28 1991-09-17 Kabushiki Kaisha Toshiba Band-gap type voltage generating circuit for an ECL circuit
    EP0396996A2 (de) * 1989-05-08 1990-11-14 National Semiconductor Corporation Bandlückenschwellenschaltung mit Hysteresis
    EP0411657A1 (de) * 1989-08-03 1991-02-06 Kabushiki Kaisha Toshiba Konstantspannungsschaltung
    US5430395A (en) * 1992-03-02 1995-07-04 Texas Instruments Incorporated Temperature compensated constant-voltage circuit and temperature compensated constant-current circuit
    JPH06131068A (ja) * 1992-10-20 1994-05-13 Fujitsu Ltd 定電圧回路

    Non-Patent Citations (1)

    * Cited by examiner, † Cited by third party
    Title
    PATENT ABSTRACTS OF JAPAN vol. 018, no. 426 (P - 1784) 9 August 1994 (1994-08-09) *

    Also Published As

    Publication number Publication date
    IN191847B (de) 2004-01-10
    US5801582A (en) 1998-09-01
    EP0809169B1 (de) 2000-08-09
    DE59702125D1 (de) 2000-09-14
    EP0809169A2 (de) 1997-11-26
    DE19621110C1 (de) 1997-06-12

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