EP0806719A3 - Schaltungsanordnung zur Erzeugung eines Referenz-potentials - Google Patents
Schaltungsanordnung zur Erzeugung eines Referenz-potentials Download PDFInfo
- Publication number
- EP0806719A3 EP0806719A3 EP97106833A EP97106833A EP0806719A3 EP 0806719 A3 EP0806719 A3 EP 0806719A3 EP 97106833 A EP97106833 A EP 97106833A EP 97106833 A EP97106833 A EP 97106833A EP 0806719 A3 EP0806719 A3 EP 0806719A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- transistor
- collector
- reference potential
- resistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/265—Current mirrors using bipolar transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Abstract
mit einem zweiten Transistor (T2), dessen Basis mit der Basis des ersten Transistors (T1) verbunden ist,
mit einem ersten Widerstand (R1), der zwischen den Kollektor des ersten Transistors (T1) und einem Ausgangsanschluß (U) zum Abgreifen des Referenzpotentials geschaltet ist,
mit einem zweiten Widerstand (R2), der zwischen den Kollektor des zweiten Transistors (T2) und den Ausgangsanschluß (U) geschaltet ist,
mit einem dritten Widerstand (R3), der zwischen den Emitter des zweiten Transistors (T2) und das Bezugspotential (M) geschaltet ist,
mit einem dritten Transistor (T3), dessen Basis mit dem Kollektor des zweiten Transistors (T2) und dessen Emitter mit dem Bezugspotential (M) verbunden ist, und mit einer gesteuerten Stromquelle (T3, T4), die zwischen ein Versorgungspotential (V) und den Ausgangsanschluß (U) geschaltet ist und die eingangsseitig mit dem Kollektor des dritten Transistors (T3) gekoppelt ist und mit einer Kapazität (C1), die dem zweiten Widerstand (R2) parallel geschaltet ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19618914A DE19618914C1 (de) | 1996-05-10 | 1996-05-10 | Schaltungsanordnung zur Erzeugung eines Referenzpotentials |
DE19618914 | 1996-05-10 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0806719A2 EP0806719A2 (de) | 1997-11-12 |
EP0806719A3 true EP0806719A3 (de) | 1998-09-16 |
EP0806719B1 EP0806719B1 (de) | 2001-08-01 |
Family
ID=7793979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97106833A Expired - Lifetime EP0806719B1 (de) | 1996-05-10 | 1997-04-24 | Schaltungsanordnung zur Erzeugung eines Referenz-potentials |
Country Status (3)
Country | Link |
---|---|
US (1) | US5883543A (de) |
EP (1) | EP0806719B1 (de) |
DE (2) | DE19618914C1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6811309B1 (en) | 2000-07-26 | 2004-11-02 | Stmicroelectronics Asia Pacific Pte Ltd | Thermal sensor circuit |
DE10357772A1 (de) * | 2003-12-10 | 2005-07-14 | Siemens Ag | Steuereinheit und Steuervorrichtung mit der Steuereinheit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3515006A1 (de) * | 1984-04-26 | 1985-10-31 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Spannungsausgangskreis |
EP0411657A1 (de) * | 1989-08-03 | 1991-02-06 | Kabushiki Kaisha Toshiba | Konstantspannungsschaltung |
GB2256949A (en) * | 1991-06-19 | 1992-12-23 | Samsung Electronics Co Ltd | Integrated bandgap voltage reference having improved substrate noise immunity |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4553083A (en) * | 1983-12-01 | 1985-11-12 | Advanced Micro Devices, Inc. | Bandgap reference voltage generator with VCC compensation |
US5028527A (en) * | 1988-02-22 | 1991-07-02 | Applied Bio Technology | Monoclonal antibodies against activated ras proteins with amino acid mutations at position 13 of the protein |
US5029295A (en) * | 1990-07-02 | 1991-07-02 | Motorola, Inc. | Bandgap voltage reference using a power supply independent current source |
JP2953226B2 (ja) * | 1992-12-11 | 1999-09-27 | 株式会社デンソー | 基準電圧発生回路 |
US5757224A (en) * | 1996-04-26 | 1998-05-26 | Caterpillar Inc. | Current mirror correction circuitry |
-
1996
- 1996-05-10 DE DE19618914A patent/DE19618914C1/de not_active Expired - Fee Related
-
1997
- 1997-04-24 DE DE59704169T patent/DE59704169D1/de not_active Expired - Lifetime
- 1997-04-24 EP EP97106833A patent/EP0806719B1/de not_active Expired - Lifetime
- 1997-05-12 US US08/855,842 patent/US5883543A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3515006A1 (de) * | 1984-04-26 | 1985-10-31 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Spannungsausgangskreis |
EP0411657A1 (de) * | 1989-08-03 | 1991-02-06 | Kabushiki Kaisha Toshiba | Konstantspannungsschaltung |
GB2256949A (en) * | 1991-06-19 | 1992-12-23 | Samsung Electronics Co Ltd | Integrated bandgap voltage reference having improved substrate noise immunity |
Non-Patent Citations (1)
Title |
---|
BIRRITTELLA M S ET AL: "DESIGN TECHNIQUES FOR IC VOLTAGE REGULATORS WITHOUT P-N-P TRANSISTORS", IEEE JOURNAL OF SOLID-STATE CIRCUITS, NEW YORK, NY, US, vol. 22, no. 1, February 1987 (1987-02-01), pages 71 - 76, XP000004174 * |
Also Published As
Publication number | Publication date |
---|---|
DE19618914C1 (de) | 1997-08-14 |
DE59704169D1 (de) | 2001-09-06 |
EP0806719A2 (de) | 1997-11-12 |
US5883543A (en) | 1999-03-16 |
EP0806719B1 (de) | 2001-08-01 |
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