EP0753206A1 - Diode et composant contenant cette diode - Google Patents

Diode et composant contenant cette diode

Info

Publication number
EP0753206A1
EP0753206A1 EP95914276A EP95914276A EP0753206A1 EP 0753206 A1 EP0753206 A1 EP 0753206A1 EP 95914276 A EP95914276 A EP 95914276A EP 95914276 A EP95914276 A EP 95914276A EP 0753206 A1 EP0753206 A1 EP 0753206A1
Authority
EP
European Patent Office
Prior art keywords
layer
diode
silicon
semiconducting
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP95914276A
Other languages
German (de)
English (en)
Inventor
Olaf Hollricher
Frank RÜDERS
Christoph Buchal
Hartmut Roskos
Jens Peter Hermanns
Elard Stein V. Kamienski
Klaus Radermacher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Publication of EP0753206A1 publication Critical patent/EP0753206A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type

Definitions

  • the invention relates to a diode with a semiconducting layer and with metallically conductive layers that are connected to this layer.
  • the invention further relates to a component containing such a diode.
  • Voltage pulse generated which can be further processed with a downstream electronics.
  • MSM metal-semiconductor-metal
  • a first metallically conductive layer and a further second metallically conductive layer are provided on a substrate for the purpose of forming two electrodes.
  • the electrodes are designed planar as interlocking finger structures. As a result, short electrode spacings of a few ⁇ are achieved, the switching time of such diodes then being essentially determined by the running time of the charge carriers between the electrodes.
  • Typical switching times with a finger spacing of 1 ⁇ m are in the order of 10-20 ps.
  • a disadvantage of such diodes is that there are limits to the reduction in finger spacing due to the lithographic resolution, so that the switching times that can be achieved are also limited.
  • the element semiconductor silicon is characterized by good technological controllability, even with ever increasing integration densities of components. For physical reasons, however, it is not possible to manufacture optoelectronic components, such as photodiodes and semiconductor lasers. On the other hand, it is very desirable to implement the most important components of the silicon-based optical communication technology that will become increasingly important in the future.
  • the transit time of the charge carriers is reduced to such an extent that the switching time of the diode no longer depends on the runtime of the charge carriers generated, but rather only is determined by the RC time constant of the layer structure. Since the length of the current channel of the charge carriers - in this case the semiconducting layer thickness. Layer determined and this can be chosen very small with the help of techniques known per se, in particular with layer thicknesses far below 1 .mu.m, in particular in the range of 0.1-0.4 .mu.m, has the inventive Diode has a significantly better switching time than known, horizontally structured MSM diodes.
  • the one metallic conductive layer is made translucent, the other metallic conductive layer is connected to a substrate.
  • the material for the translucent layer is one that forms the highest possible Schottky barrier with the material of the semiconducting layer.
  • CoSi2 is provided as the material for the metallic layer connected to the substrate. It can be designed as a base in the form of a metallic CoSi2 layer buried in a silicon substrate.
  • Such a structure can be produced, for example, using ion beam synthesis, as described in Appl. Phys. Lett. .50. (1987),
  • any metal can be selected as the material for the first metallically conductive layer, which functions as a counterelectrode. If, according to claim 3, this material forms the highest possible Schottky barrier, in particular on silicon, with the semiconducting material, the dark current of the photoswitch is thereby advantageously minimized.
  • this translucent counterelectrode can be chosen so that it is semitransparent and, for example, allows 50% of the light used to pass through.
  • the diode can be contacted using conventional coplanar line technology, but also microstrip line technology, where the CoSio layer can serve as an earthed base area.
  • a sub-micron structuring is not necessary when manufacturing such a diode
  • the diode according to the invention can have a switching time which is no longer limited by the transit time but only by the RC time constant of the diode if the semiconducting layer adjacent to the two metallically conductive layers is made as thin as possible . Compared to known diodes of this type, this considerably improves the switching time.
  • the object is further achieved by a component having the entirety of the features according to claim 5. Further advantageous embodiments form the subjects of the dependent claims 6 and 7.
  • the material of the waveguide is identical to the semiconducting material according to claim 6, the structure of the component is simplified. If silicon is selected as the material, this can be used for optocommunication at the preferred wavelength of 1.54 ⁇ m. If Si0 2 is selected , visible light can also be used for transmission.
  • FIG. 1 schematically shows a top view of a diode according to the invention with a vertical metal-semiconductor-metal structure layers 1, 2 and 3 in microstrip line design with semi-transparent metal as counter electrode 2. It can be as
  • a 10 nm thick aluminum or chromium layer can be provided against the counter electrode.
  • FIG. 2 shows in a schematic cross-sectional representation of the diode according to the invention (in the A-A 'plane of FIG. 1) how the light passes through the semitransparent aluminum electrode 2 into the semiconducting silicon region 1 to form charge carriers.
  • the diode shown is one in which, in a silicon substrate 4, dig, the other metallically conductive layer 3 is in the form of CoSi2.
  • the layer thickness of the semiconducting silicon layer 1 had, for example, a value in the range from 50 to 500 nm
  • the layer thickness of the buried cobalt silicide base electrode had a value of, for example, 100 nm.
  • the object of the invention is not limited to a vertical arrangement of a layer sequence of successively metallic, semiconducting and metallic layers on a substrate surface. Rather, the vertical orientation of the layer sequence can also run parallel to the substrate surface.
  • the layers of the MSM diode function can thus be arranged perpendicular to the substrate surface, as illustrated in FIGS. 4 and 5 by way of example in comparison to a — double — MSM diode structure in FIG. 3.
  • the vertical layer orientation of the MSM diode structure is indicated by an arrow in FIGS. 3 to 5.
  • SiC> 2 can be selected as the insulator.
  • CoSi2 was chosen as the material for the respective buried electrode of the respective diode.
  • the tapping of the electrical signal at the two metallic electrodes 2 and 3 or "metal" and "CoSi 2 " is shown schematically for the MSM diode on the right-hand side.
  • a first and a further CoSi 2 region 2 and 3 are formed in a semiconducting silicon layer 1.
  • the silicon layer 1 was formed on a substrate 4 made of Al2O3.
  • the metallic layer 2 or 3 is connected to the contact surface 6 or 5 of the silicon layer 1.
  • the silicon regions 11 and 12 in FIG. 5 can be provided to form further MSM diode functions.
  • one or more of the CoSi2 regions can be made translucent.
  • the process can be used to form metallic
  • CoSi2 regions in such a silicon layer an implantation with Co using suitable masking techniques can be selected in this layer. In this way, a more or less high number of MSM diode functions in an integrated form that is important for silicon technology is obtained in a relatively simple manner.
  • Typical dimensions of the elements of an MSM diode structure according to the invention for ultra-short pulse response times were in the range from 10 nm (for the formation of a semipermeable electrode for incident light) to 200 nm for the thickness a of the metallic layer 2, in the range from 70 nm to 500 nm for the thickness d of the semiconducting silicon layer 1 and in the range from 100 nm to 300 nm for the thickness c of the metallic CcSi2 layer 3.
  • the lateral dimension b of the MSM diode structure was in the range from 5 ⁇ m up to 40 ⁇ m.
  • the diode was made laterally square but also rectangular for special purposes.
  • the dimensions a, b, c, and d are shown schematically in FIG. 6.
  • the MSM diode according to the invention is not limited to the dimensions specified here.
  • FIG. 1 Another figure relate to a component which ches contains an optical waveguide and a vertical metal-semiconductor-metal diode on a particularly insulating substrate.
  • photons that are coupled into a waveguide from a glass fiber line can excite electrons at one of the metal electrodes via the Schottky barrier. These are then accelerated by a high electric field between the metal layers to the other electrode, which leads to a short current flow or a voltage pulse.
  • This diode is characterized in that due to the Schottky effect and by applying an external voltage, the conduction and valence band in the semiconductor is modified so that there are no free charge carriers between the metal layers or any generation of charge carriers leads to the fact that the Electrons and the holes are accelerated towards the metal electrodes.
  • the band course is shown schematically in FIG. 6b, the second metal layer being biased positively relative to metal 1.
  • the incident photons (1.54 ⁇ m, which corresponds to an energy of approx. 0.8 eV) are not able to generate electron pairs in silicon, but it is possible to to excite trons in the metal electrodes. If the excitation takes place in metal 2 via the Schottky barrier ⁇ ⁇ as in FIG. 6b, the electrons can penetrate into the semiconductor and be accelerated to the counterelectrode due to the existing electrical field. This effect is called the internal photo effect.
  • Buried .CoSi2 is particularly suitable as a metal electrode, since epitaxial overgrowth with silicon is possible.
  • the Schottky barrier height of CoSi2 is approximately 0.64 eV, less than 0.8 eV, so that electrons can be excited across the barrier. Since the silicon layer is relatively thin (approx. 100 nm), there is a relatively high electric field between the metal contacts. This also leads to a slight decrease in the Schottky barrier height (due to the image charge) or to an increase in the number of electrons that are accelerated to the counterelectrode. With the help of these diodes, electrical pulses with a half-width of less than 10 ps can be realized. An isolating substrate is used to avoid paritarian effects.
  • SIMOX substrates with a buried SiG ⁇ layer
  • SOS substrates epitaxial silicon on sapphire
  • FIG. 7 shows a substrate 4, for example made of silicon, connected to a metallic CoSi2 layer 3.
  • a semiconducting silicon layer 1 is predefined on the metallic layer.
  • the silicon layer 1 is oxidized to SiO 2 to form a defined waveguide area made of silicon to delimit adjacent areas (FIG. 8).
  • a metallic top contact 2 is applied to part of the surface of the layer structure which has been processed until then.
  • FIG. 10 shows the structure according to FIG. 9, viewed from above, after a part of the SiO 2 located on the CoSi 2 layer on both sides of the waveguide has been removed up to the CoSi 2 layer to form the geometry of the waveguide.
  • the electrical lead 2 'leads to the metallic top contact 2 of the MSM diode.
  • the semiconducting layer 1 made of silicon and the further metallic CoSi 2 layer 3 for forming the MSM diode function are hidden below the top contact 2.
  • a stripe-shaped SiO 2 layer region 1 ' is coupled to the semiconducting layer 1 of this diode and performs the function of the integrated waveguide. Visible light from an external glass fiber, in particular, can be coupled to this waveguide, forwarded to the MSM diode and converted there into an electrical signal. Otherwise, it is conceivable to make the top contact translucent if necessary.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Une diode comprend une couche semi-conductrice et des couches conductrices métalliques liées en surface à la couche semi-conductrice. L'objet de l'invention est de créer une diode de ce type avec un délai de commutation amélioré. A cet effet, une couche conductrice métallique est transparente à la lumière et l'autre couche conductrice métallique est liée à un substrat. On a reconnu que l'utilisation d'un agencement vertical permet de réduire tellement le temps de transit des porteurs de charge dans une mesure telle que le délai de commutation ne dépend plus que de la constante de temps RC de la structure stratifiée.
EP95914276A 1994-03-29 1995-03-28 Diode et composant contenant cette diode Ceased EP0753206A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4410799 1994-03-29
DE4410799A DE4410799C2 (de) 1994-03-29 1994-03-29 Diode
PCT/DE1995/000422 WO1995026572A1 (fr) 1994-03-29 1995-03-28 Diode et composant contenant cette diode

Publications (1)

Publication Number Publication Date
EP0753206A1 true EP0753206A1 (fr) 1997-01-15

Family

ID=6514097

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95914276A Ceased EP0753206A1 (fr) 1994-03-29 1995-03-28 Diode et composant contenant cette diode

Country Status (5)

Country Link
US (1) US5859464A (fr)
EP (1) EP0753206A1 (fr)
JP (1) JPH09510832A (fr)
DE (2) DE4410799C2 (fr)
WO (1) WO1995026572A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10053670A1 (de) * 2000-10-28 2002-05-08 Daimler Chrysler Ag Optisches Signalübertragungssystem
US6649990B2 (en) * 2002-03-29 2003-11-18 Intel Corporation Method and apparatus for incorporating a low contrast interface and a high contrast interface into an optical device
JP5147935B2 (ja) * 2008-12-10 2013-02-20 ｎｕｓｏｌａ株式会社 薄膜光電変換素子と薄膜光電変換素子の製造方法
US20110215434A1 (en) * 2009-08-11 2011-09-08 Si-Nano Inc. Thin-film photoelectric conversion device and method of manufacturing thin-film photoelectric conversion device
US9105790B2 (en) * 2009-11-05 2015-08-11 The Boeing Company Detector for plastic optical fiber networks
US8983302B2 (en) * 2009-11-05 2015-03-17 The Boeing Company Transceiver for plastic optical fiber networks
WO2011152458A1 (fr) * 2010-06-03 2011-12-08 株式会社Si-Nano Élément convertisseur photoélectrique
WO2013158986A2 (fr) * 2012-04-19 2013-10-24 Carnegie Mellon University Diode métal/semi-conducteur/métal à hétérojonction
US9543423B2 (en) 2012-09-04 2017-01-10 Carnegie Mellon University Hot-electron transistor having multiple MSM sequences

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Publication number Priority date Publication date Assignee Title
GB2144266B (en) * 1983-06-29 1987-03-18 Citizen Watch Co Ltd Method of manufacture for ultra-miniature thin-film diodes
JPS60220967A (ja) * 1984-04-18 1985-11-05 Fuji Xerox Co Ltd 半導体装置
US4884112A (en) * 1988-03-18 1989-11-28 The United States Of America As Repressented By The Secretary Of The Air Force Silicon light-emitting diode with integral optical waveguide
US5006906A (en) * 1988-08-29 1991-04-09 Bell Communications Research, Inc. Integrated semiconductor waveguide/photodetector
DE59010539D1 (de) * 1989-01-09 1996-11-21 Siemens Ag Anordnung zum optischen Koppeln eines optischen Wellenleiters um eine Photodiode auf einem Substrat aus Silizium
US5005901A (en) * 1989-11-16 1991-04-09 Seatector Hawaii, Inc. Removable seat cover
FR2660114B1 (fr) * 1990-03-22 1997-05-30 France Etat Dispositif de detection optique a seuil de detection variable.
US5122852A (en) * 1990-04-23 1992-06-16 Bell Communications Research, Inc. Grafted-crystal-film integrated optics and optoelectronic devices
DE4113143C2 (de) * 1991-04-23 1994-08-04 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung eines Schichtsystems und Schichtsystem
US5359186A (en) * 1992-05-22 1994-10-25 Pennsylvania State University Particle detector for detecting ionizing particles having a potential barrier formed in a region of defects
US5448099A (en) * 1993-03-04 1995-09-05 Sumitomo Electric Industries, Ltd. Pin-type light receiving device, manufacture of the pin-type light receiving device and optoelectronic integrated circuit

Non-Patent Citations (1)

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Title
See references of WO9526572A1 *

Also Published As

Publication number Publication date
DE19580246D2 (de) 1997-07-17
WO1995026572A1 (fr) 1995-10-05
DE4410799A1 (de) 1995-10-05
US5859464A (en) 1999-01-12
JPH09510832A (ja) 1997-10-28
DE4410799C2 (de) 1996-02-08

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