WO2011152458A1 - Élément convertisseur photoélectrique - Google Patents

Élément convertisseur photoélectrique Download PDF

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Publication number
WO2011152458A1
WO2011152458A1 PCT/JP2011/062603 JP2011062603W WO2011152458A1 WO 2011152458 A1 WO2011152458 A1 WO 2011152458A1 JP 2011062603 W JP2011062603 W JP 2011062603W WO 2011152458 A1 WO2011152458 A1 WO 2011152458A1
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conductive layer
layer
photoelectric conversion
conversion element
electrode
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PCT/JP2011/062603
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English (en)
Japanese (ja)
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穂世 ブリセニョ
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株式会社Si-Nano
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Priority to JP2012518434A priority Critical patent/JP5437486B2/ja
Publication of WO2011152458A1 publication Critical patent/WO2011152458A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type

Definitions

  • the present invention relates to a photoelectric conversion element applied to, for example, a photodiode or a solar cell, and more particularly to a photoelectric conversion element that synergistically uses a Schottky effect and a surface plasmon effect.
  • Patent Document 1 describes a photoelectric conversion element using surface plasmon resonance.
  • An uneven structure having a uniform period is formed on the surface of the metal layer of the element.
  • a semiconductor layer is laminated on the concavo-convex structure, and a transparent electrode is further laminated thereon.
  • Another electrode is laminated on the back surface of the metal layer.
  • Non-Patent Document 1 describes that near-infrared light of 1 ⁇ m to 2 ⁇ m can be detected by an optical sensor in which CoSi 2 is laminated on n-type Si.
  • Non-Patent Document 2 describes that infrared light of 1 ⁇ m to 5 ⁇ m can be detected by an optical sensor in which CoSi 2 is laminated on p-type SiGe.
  • Non-Patent Document 3 describes that infrared light of 1 ⁇ m to 6 ⁇ m can be detected by an optical sensor in which Pt is stacked on p-type Si.
  • Non-Patent Document 4 describes that light of 10 ⁇ m or less can be detected by an optical sensor in which Ir is laminated on Si.
  • the photoelectric conversion element is: an n-type or p-type semiconductor layer; A conductive layer laminated on the semiconductor layer; A first electrode provided on the conductive layer or the semiconductor layer; A polarity determining layer interposed between the first electrode and the conductive layer; A second electrode provided on the conductive layer; A metal nanostructure including a plurality (preferably a large number) of periodic structures stacked on the conductive layer; Each periodic structure is composed of a plurality of first protrusions protruding in the direction of the stack, and the arrangement interval of the first protrusions differs depending on the periodic structure.
  • photocarriers are generated by photoelectric conversion at the Schottky junction between the semiconductor layer and the conductive layer.
  • the sensitivity of photoelectric conversion can be increased by the metal nanostructure in the vicinity of the Schottky junction.
  • the wavelength region of incident light that can be photoelectrically converted by the metal nanostructure can be widened.
  • the semiconductor layer is an n-type semiconductor
  • photocarrier electrons move to the semiconductor layer side by the electric field of the depletion layer. Along with this, electrons flow from the second electrode into the conductive layer. Electrons (current) can flow smoothly between the second electrode and the conductive layer. Electrons flow along the conductive layer toward the first electrode. Therefore, the first electrode becomes a cathode.
  • the second electrode becomes an anode.
  • photocarrier holes move to the semiconductor layer side by the electric field of the depletion layer. Along with this, holes flow from the second electrode into the conductive layer. Holes flow toward the first electrode along the conductive layer. Therefore, the first electrode becomes an anode.
  • the second electrode becomes a cathode. Therefore, the electrode to be the anode and the electrode to be the cathode can be determined, and the direction of the photoinduced current can be controlled. Therefore, the current-voltage characteristic is reliably asymmetric between the positive side and the negative side, and a clean diode characteristic can be obtained.
  • the polarity determining layer is preferably composed of a barrier layer made of an insulator having a thickness of less than 1 nm.
  • the conductive layer and the first electrode constitute a capacitor with the barrier layer interposed therebetween. Accordingly, carriers are accumulated in a portion of the conductive layer facing the first electrode.
  • the semiconductor layer is an n-type semiconductor, electrons are accumulated.
  • the semiconductor layer is a p-type semiconductor, holes are accumulated.
  • the electrode to be the anode and the electrode to be the cathode can be reliably determined.
  • the thickness of the insulator By setting the thickness of the insulator to less than 1 nm, carriers can surely pass through the barrier layer by the tunnel effect or the like, and the photo-induced current can be reliably taken out.
  • the polarity determining layer is a convex layer integrally protruding from the semiconductor layer, and the convex layer is in Schottky contact with the end surface of the conductive layer on the first electrode side and in ohmic contact with the first electrode. It is preferable. As a result, carriers can flow toward the convex layer side and thus toward the first electrode at the Schottky junction between the convex layer and the conductive layer. Therefore, the electrode to be the anode and the electrode to be the cathode can be reliably determined.
  • the photoelectric conversion element can be thinned.
  • the metal component constituting the conductive layer examples include Co, Fe, W, Ni, Al, and Ti. These metal elements listed have relatively high melting points and excellent mechanical properties at high temperatures.
  • the conductive layer may be a metal, or a mixture or alloy of a metal and a semiconductor. Examples of the metal or semiconductor mixture or alloy include metal silicide. When the semiconductor layer is made of silicon, the conductive layer may be a metal silicide formed by diffusing the metal component and the surface layer portion of the semiconductor layer. The diffusion can be performed by, for example, annealing.
  • the metals listed above (Co, Fe, W, Ni, Al, Ti) are suitable for silicidation.
  • the metal nanostructure contributes to the increase of the light-induced electric field.
  • the metal nanostructure is preferably an aggregate of nanosized metal fine particles.
  • Au, Ag, Pt, Cu, or Pd is preferably used as the metal constituting the metal nanostructure. These listed metal elements have relatively high chemical stability, are not easily alloyed, and are not easily combined with a semiconductor such as Si. Therefore, surface plasmon can be formed reliably.
  • the metal nanostructure is preferably provided in a portion between the pair of electrodes in the conductive layer, and more preferably widely distributed in a portion between the pair of electrodes.
  • the metal nanostructure is formed as follows, for example.
  • a metal raw material to be the metal nanostructure is disposed on the conductive layer and annealed.
  • the annealing temperature condition is, for example, about 400 ° C. to 800 ° C., and preferably about 600 ° C.
  • the shape or property of the metal raw material is not particularly limited, and may be any of a thin film shape, a small piece shape, a small lump shape, a granular shape, a powder shape, a colloidal shape, a fiber shape, a wire shape, and a dot shape. It may be a property.
  • the fine particles of the metal raw material diffuse along the surface of the conductive layer.
  • the fine particles of the metal raw material are branched in multiple stages or multiple, for example, an aggregate having a fractal structure.
  • the metal nanostructure can be easily formed.
  • Sub-micron or nano-order irregularities are formed on the surface of the metal nanostructure.
  • the surface of the metal nanostructure includes a large number of protrusions protruding in the stacking direction (thickness direction), for example, in a cluster shape.
  • the electrode may also be used as a metal raw material for the metal nanostructure.
  • the metal constituting the electrode may be diffused around the electrode in a cluster shape or a fractal shape by annealing. Then, the metal nanostructure can be formed in the vicinity of the electrode.
  • the electrode and the metal nanostructure include the same metal component.
  • the periodic structure preferably has a random period. It is preferable that the period of the periodic structure is changed. That is, it is preferable that the arrangement interval of the first protrusions differs according to the periodic structure. Thereby, it can respond to the light of a different wavelength according to a periodic structure. Therefore, the wavelength range in which the metal nanostructure can be sensitive as a whole can be widened. Therefore, it is possible to provide a photoelectric conversion element that can cope with a wide band extending from the visible light region to the infrared light region.
  • the arrangement interval (cycle) of the first protrusions is preferably about 0.1 to 1 times the wavelength ⁇ of the incident light, and more preferably about 0.1 times the wavelength ⁇ .
  • the arrangement interval (period) of the first protrusions is preferably about 0.1 to 1 times the sensitive wavelength of the Schottky element formed by the semiconductor layer and the conductive layer.
  • the periodic structure is sensitively sensitive to incident light having a wavelength ⁇ of about 1 to 10 times (particularly about 10 times the period) of the first convex portion constituting the periodic structure and plasmon resonance. This contributes to the amplification of the light-induced electric field.
  • the period of the periodic structure of the n-type element in the semiconductor layer is smaller than the period of the periodic structure of the p-type element in the semiconductor layer (arrangement interval of the first protrusions).
  • the arrangement interval (period) of the first protrusions is more preferably about 100 nm or less. This makes it possible to have good sensitivity to light in the infrared light region to the visible light region having a wavelength of about 1 ⁇ m or less.
  • the arrangement interval (period) of the first protrusions is more preferably about 150 nm or less. Thereby, it is possible to have good sensitivity to infrared light having a wavelength of about 1 ⁇ m to 4 ⁇ m.
  • the protrusion height of the first protrusion is preferably about 10 nm to 20 nm.
  • At least one of the periodic structures is about 0.1 to 1 times as large as any wavelength within a certain wavelength range (preferably from the visible light region to the infrared light region) (particularly about 0.1 times the size). ) Is preferably provided. Thus, if the incident light is included in the wavelength range, at least one periodic structure of the metal nanostructure can be sensitive to the incident light.
  • the metal nanostructure further includes a plurality of second protrusions protruding in the stacking direction from the first protrusions, the second protrusions are dispersed from each other, and each second protrusion is formed of the periodic structure. It is preferable that they are arranged so as to overlap or be close to any one.
  • near-field light is generated around the second convex portion. Due to the synergistic effect of this near-field light and plasmon resonance due to the periodic structure, the photo-induced electric field can be amplified with high sensitivity and output (K. Kobayashi, et.al., Progress in Nano-Electro-Optecs I. ed. M See Ohtsu, p.119 (Sptinger-Verlag, Berlin, 2003). Even if the incident light is weak, the photovoltaic force can be generated with high sensitivity.
  • the protruding height of the second protrusion is preferably about 50 nm to 200 nm.
  • the dispersion interval of the second protrusions (the distance between adjacent second protrusions) is preferably greater than the wavelength of incident light, and is greater than the sensitive wavelength of a Schottky element formed by the semiconductor layer and the conductive layer. preferable. It is preferable that the dispersion interval of the 2nd convex part of the element whose semiconductor layer is n type is smaller than the dispersion interval of the 2nd convex part of the element whose semiconductor layer is p type.
  • the dispersion interval of the second protrusions is preferably 1 ⁇ m or more, and more preferably about 2 ⁇ m to 3 ⁇ m.
  • the dispersion interval of the second protrusions is about 3 ⁇ m to 5 ⁇ m.
  • the upper limit of the dispersion interval of the second protrusions is preferably about 3 ⁇ m to 5 ⁇ m for the n-type, and preferably about 5 ⁇ m to 6 ⁇ m for the p-type.
  • the metal nanostructure may be mixed with an insulator such as a carbon compound to form an MIM structure.
  • a nanostructure made of a semiconductor having sensitivity in the ultraviolet region or infrared region may be further provided on the surface of the photoelectric conversion element.
  • the semiconductor layer is an n-type semiconductor
  • a semiconductor having sensitivity in the ultraviolet region refers to a semiconductor having a property that carriers are excited when irradiated with ultraviolet light having a wavelength of 0.4 ⁇ m or less. Examples of such a semiconductor include zinc oxide (ZnO), which is an n-type semiconductor, and other examples include n-type gallium nitride (n-GaN).
  • the semiconductor layer is a p-type semiconductor
  • a semiconductor having sensitivity in the infrared region refers to a semiconductor having a property in which carriers are excited when irradiated with infrared light having a wavelength of, for example, 0.7 ⁇ m or more.
  • Examples of such a semiconductor include p-type gallium nitride (p-GaN) and carbon.
  • nanostructures include nanowires, nanotubes, nanoneedles, and nanorods. The nanostructure can increase the sensitivity of photoelectric conversion.
  • the photoelectric conversion sensitivity to incident light in the ultraviolet region can be increased.
  • the nanostructure is made of a semiconductor having sensitivity in the infrared region
  • the photoelectric conversion sensitivity to incident light in the infrared region can be increased.
  • the electrode to be the anode and the cathode to be the cathode of the photoelectric conversion element can be determined reliably, and asymmetric diode characteristics can be obtained.
  • FIG. 1 is a cross-sectional view showing a schematic structure of a photoelectric conversion element according to the first embodiment of the present invention.
  • FIG. 2 is an equivalent circuit diagram of the photoelectric conversion element.
  • FIG. 3 is a graph showing a model of current-voltage characteristics of the photoelectric conversion element.
  • FIG. 4 is a cross-sectional view showing a schematic structure of a photoelectric conversion element according to the second embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing a schematic structure of a photoelectric conversion element according to the third embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing a schematic structure of a photoelectric conversion element according to the fourth embodiment of the present invention.
  • FIG. 1 is a cross-sectional view showing a schematic structure of a photoelectric conversion element according to the first embodiment of the present invention.
  • FIG. 2 is an equivalent circuit diagram of the photoelectric conversion element.
  • FIG. 3 is a graph showing a model of current-voltage characteristics of the
  • FIG. 7 is a cross-sectional view showing a schematic structure of a photoelectric conversion element according to the fifth embodiment of the present invention.
  • FIG. 8A is an image obtained by observing one part of the surface of the metal nanostructure in Example 1 with an SEM (scanning electron microscope).
  • FIG. 8B is an image obtained by observing a portion of the surface of the metal nanostructure in Example 1 different from that in FIG.
  • FIG. 9 is a stereoscopic image obtained by observing the surface structure of the metal nanostructure in Example 1 with an AFM (atomic force microscope).
  • FIG. 10 is an explanatory diagram of the stereoscopic image of FIG.
  • FIG. 1 shows a photoelectric conversion element 1 according to the first embodiment of the present invention.
  • the photoelectric conversion element 1 includes a semiconductor layer 11, a conductive layer 20, a metal nanostructure 30, and a pair of electrodes 41 and 42.
  • a conductive layer 20 is stacked on the semiconductor layer 11.
  • Metal nanostructures 30 are stacked on the conductive layer 20.
  • a pair of electrodes 41 and 42 are provided on the conductive layer 20.
  • a polarity determining layer 50 is interposed between the first electrode 41 and the conductive layer 20.
  • FIG. 2 is an equivalent circuit diagram of the photoelectric conversion element 1.
  • the photoelectric conversion element 1 has a structure including a diode and a capacitor. Hereinafter, the structure of the photoelectric conversion element 1 will be described in detail.
  • the semiconductor layer 11 is composed of silicon (Si). However, the present invention is not limited to this, and the semiconductor layer 11 may be composed of another semiconductor such as Ge or GaAs.
  • the semiconductor layer 11 is doped with an n-type impurity such as P (phosphorus).
  • the semiconductor layer 11 constitutes an n-type semiconductor.
  • the semiconductor layer 11 also serves as a substrate for the photoelectric conversion element 1.
  • the semiconductor layer 11 is composed of a silicon substrate.
  • the silicon substrate is doped with n-type impurities.
  • a silicon wafer or the like can be used as the silicon substrate.
  • the silicon substrate ensures the shape retention and mechanical rigidity of the photoelectric conversion element 1.
  • the substrate may be provided separately from the semiconductor layer 11.
  • the n-type semiconductor layer 11 may be coated on a substrate made of glass or a resin film.
  • the n-type semiconductor layer 11 may be formed on the surface of the separate substrate by CVD or the like.
  • the conductive layer 20 covers the entire surface of the semiconductor layer 11 (upper surface in FIG. 1).
  • the conductive layer 20 is made of metal silicide and has conductivity. Silicon on the surface layer of the semiconductor layer 11 is self-organized to constitute a silicon component of the conductive layer 20.
  • Examples of the metal component constituting the conductive layer 20 include Co, Fe, W, Ni, Al, and Ti. However, the metal component is not limited to these.
  • Co is used as a metal component constituting the conductive layer 20.
  • Conductive layer 20 is formed by CoSix, preferably are composed of CoSi 2. Thereby, a good Schottky interface is formed between the conductive layer 20 and the semiconductor layer 11.
  • the conductive layer 20 may be composed of only a metal component.
  • the thickness of the conductive layer 20 is about several nm to several tens of nm, preferably about several nm.
  • the thickness of the conductive layer 20 in the drawing is exaggerated with respect to the thickness of the semiconductor layer 11, the electrodes 41 and 42, the metal nanostructure 30, and the like.
  • the metal nanostructure 30 is provided on the surface of the conductive layer 20 (upper surface in FIG. 1).
  • the metal nanostructures 30 are widely distributed on the surface of the conductive layer 20.
  • the metal nanostructure 30 is disposed in a portion between the pair of electrodes 41 and 42 on the surface of the conductive layer 20 (hereinafter referred to as “interelectrode portion”), and more preferably the interelectrode portion. Distributed throughout.
  • the metal nanostructure 30 may be stacked only on a part of the conductive layer 20.
  • the metal nanostructure 30 may be provided only in the vicinity of the electrode 41 or 42 of the conductive layer 20.
  • the metal nanostructure 30 is composed mainly of a metal such as Au, Ag, Pt, Cu, or Pd.
  • Au is used as the metal constituting the metal nanostructure 30.
  • the metal nanostructure 30 is an Au-rich structure.
  • An insulator such as a carbon compound may be mixed in the metal constituting the metal nanostructure 30, and the metal nanostructure 30 has a metal-insulator-metal (MIM: metal-insulator-metal) structure. It may be.
  • the metal nanostructure 30 has a structure in which Au nanoparticles are aggregated in a cluster shape or a fractal shape (see FIGS. 9 and 10).
  • the aggregate of Au nano-particles of the metal nanostructure 30 includes a large number of protrusions protruding in the thickness direction or stacking direction (upward) of the element 1. These convex portions are gathered in a cluster. Alternatively, it has a fractal structure in which an aggregate of Au nanoparticles is diffused so as to branch multiple times.
  • the metal nanostructure 30 includes a large number of first protrusions 31 and second protrusions 32. A part of the many convex parts constitutes the first convex part 31, and the other part constitutes the second convex part 32.
  • the metal nanostructure 30 has at least one periodic structure 30.
  • the metal nanostructure 30 has a plurality, a large number, or an infinite number of periodic structures 33.
  • One periodic structure 33 is constituted by the plurality of adjacent convex portions 31, 31... In the above-described many convex portions of the metal nanostructure 30.
  • the first protrusions 31, 31... Constituting each periodic structure 33 are arranged at a certain interval (period) along the surface direction of the element 1 (direction orthogonal to the stacking direction). The arrangement interval (period) of the first convex portions 31 differs depending on the periodic structure 33.
  • the arrangement interval (period) of the first protrusions 31 in the periodic structure 33 is preferably about several tens of nm to several ⁇ m, and more preferably about 40 nm to 100 nm.
  • This arrangement interval (period) is preferably about 0.1 to 1 times the wavelength of the incident light L, and more preferably about 0.1 times.
  • the arrangement interval (period) is about 0.1 to 1 times the sensitive wavelength (visible light region to infrared light region) of the Schottky element composed of the n-type semiconductor layer 10 and the conductive layer 40. It is preferable.
  • the metal nanostructure 30 preferably includes at least one periodic structure having an arrangement interval of about 0.1 to 1 times the arbitrary wavelength within the sensitive region of the Schottky element.
  • a plurality of second convex portions 32 are dispersed and arranged in the metal nanostructure 30.
  • Each 2nd convex part 32 is arrange
  • the second convex portion 32 has a protruding height larger than that of the first convex portion 31 and has a sharpness (ratio of the protruding height and the width of the bottom portion) larger than that of the first convex portion 31.
  • the protruding height of the second convex portion 32 is preferably about 50 nm to 200 nm.
  • the dispersion interval between the second convex portions 32 is preferably larger than the wavelength of the incident light.
  • the dispersion interval is preferably 1 ⁇ m or more, and preferably about 2 ⁇ m to 3 ⁇ m.
  • the upper limit of the dispersion interval between the second convex portions 32 is preferably about 3 ⁇ m to 5 ⁇ m.
  • the pair of electrodes 41 and 42 are disposed on the conductive layer 20 at positions separated from each other.
  • the first electrode 41 is disposed at one end (on the right in FIG. 1) of the upper surface of the conductive layer 20.
  • the second electrode 42 is disposed on the other end portion (left side in FIG. 1) of the upper surface of the conductive layer 20.
  • the arrangement of the electrodes 41 and 42 is not limited to the above.
  • one of the electrodes 41 and 42 may be disposed at the central portion of the element 1, and the other of the electrodes 41 and 42 may be disposed at the four corners (peripheral portions) of the element 1.
  • the electrodes 41 and 42 are made of a metal such as Au, Ag, Pt, Cu, or Pd.
  • Au is used as the metal constituting the electrodes 41 and 42. Therefore, the electrodes 41 and 42 are composed of the same metal component as that constituting the metal nanostructure 30.
  • the metal component constituting the metal nanostructure 30 and the metal component constituting the electrodes 41 and 42 may be different from each other.
  • the two electrodes 41 and 42 may be composed of different metal components.
  • the barrier layer 50 is provided as a polarity determination layer.
  • the barrier layer 50 is made of an insulator such as alumina, SiO 2 , SiN, or a carbon compound (for example, resin).
  • the thickness of the barrier layer 50 is small enough to cause a tunnel effect.
  • the thickness of the barrier layer 50 is angstrom order, ie less than 1 nm. In the drawing, the thickness of the barrier layer 50 is exaggerated with respect to the thickness of the conductive layer 20, the metal nanostructure 30, and the like.
  • the first electrode 41 and the conductive layer 20 are opposed to each other with the barrier layer 50 interposed therebetween, thereby forming a capacitor.
  • the second electrode 42 and the conductive layer 20 are in direct contact.
  • the second electrode 42 is in ohmic contact with the conductive layer 20.
  • a method for manufacturing the photoelectric conversion element 1 will be described.
  • [Conductive layer material coating process] A P-doped n-type silicon substrate 11 is prepared. Co, which is a raw material component of the conductive layer 20, is formed on the substrate 11.
  • Co film forming method PVD (Physical Vapor Deposition) such as sputtering or vapor deposition can be employed. Not limited to PVD, Co may be coated by other film forming methods such as spin coating.
  • a barrier layer 50 made of an insulating material (for example, alumina) having an angstrom order thickness is disposed at a position where the first electrode 41 is to be disposed on the Co film.
  • the arrangement of the barrier layer 50 can be performed by various film forming methods such as CVD.
  • a metal raw material (Au) to be the first electrode 41 is provided on the barrier layer 50. Further, a metal raw material (Au) to be the second electrode 42 is provided at a position where the second electrode 42 is to be disposed on the Co film.
  • the metal raw material (Au) for the electrodes 41 and 42 can be arranged by various film forming methods such as sputtering and vapor deposition.
  • a metal raw material (Au) that becomes the metal nanostructure 30 is disposed between the electrodes 41 and 42 on the Co film.
  • the shape or property of the metal raw material (Au) of the metal nanostructure 30 is not particularly limited, and is a thin film shape, small piece shape, small lump shape, granular shape, powder shape, colloidal shape, fiber shape, wire shape, dot shape, and the like. Any of these may be used, and other shapes or properties may be used.
  • the metal raw material (Au) is in the form of a thin film, it can be formed by PVD such as sputtering or vapor deposition.
  • a part of the metal raw material (Au) to be the electrodes 41 and 42 can be diffused into the inter-electrode part in the diffusion step described later to form the metal nanostructure 30, in which case the metal nanostructure raw material arranging step is omitted. May be.
  • the temperature condition for the annealing treatment is preferably about 400 ° C. to 800 ° C., more preferably about 600 ° C.
  • the annealing treatment is performed in a 100% inert gas atmosphere as much as possible.
  • a rare gas such as He, Ar, Ne or the like can be used, and N 2 may also be used.
  • the pressure condition for the annealing treatment is in the vicinity of atmospheric pressure, for example, about several Pa lower than atmospheric pressure.
  • the Co is diffused into Si constituting the surface portion of the substrate 11 by the annealing treatment.
  • the CoSix conductive layer 20 formed by self-organizing the surface portion of the Si substrate 11 is formed, and the semiconductor layer 11 and the conductive layer 20 can be securely bonded by Schottky.
  • Au fine particles arranged on the conductive layer 20 are diffused so as to form clusters or fractals along the surface of the conductive layer 20. That is, Au fine particles diffuse so as to branch into multiple, and become an aggregate of a fractal structure.
  • the surface of the aggregate has sub-micron or nano-order irregularities and is clustered. Thereby, the metal nanostructure 30 can be formed naturally.
  • the diffusion step may be performed by a method other than annealing.
  • the conductive layer 20 and the first electrode 41 constitute a capacitor with the barrier layer 50 interposed therebetween.
  • a current can flow smoothly between the second electrode 42 at the other end (left in FIG. 1) and the conductive layer 20.
  • a Schottky junction with the CoSix layer 20 in the n-Si layer 11.
  • photocarriers are generated by photoelectric conversion.
  • the sensitivity of photoelectric conversion can be increased by the metal nanostructure 30 in the vicinity of the Schottky junction.
  • the wavelength range of light that can be photoelectrically converted can be expanded by the metal nanostructure 30.
  • the electrons of the photocarrier generated at the Schottky junction move to the n-Si layer 11 side by the electric field of the depletion layer. Along with this, electrons flow from the second electrode 42 into the conductive layer 20. Electrons flow toward the first electrode 41 along the conductive layer 20. Electrons are accumulated in a portion of the conductive layer 20 facing the first electrode 41. The electrons can pass through the barrier layer 50 by the tunnel effect and move to the first electrode 41. Thereby, a photo-induced current can be taken out. Accordingly, the first electrode 41 becomes a cathode. The second electrode 42 becomes the anode.
  • the electrode 42 serving as the anode and the electrode 41 serving as the cathode can be determined, and the direction of the photoinduced current can be controlled. Therefore, as shown in FIG. 3, the current-voltage characteristic can be surely asymmetric between the positive side and the negative side, and a clean diode characteristic can be obtained.
  • the withstand voltage is improved, and the voltage-current characteristics during light irradiation are forward biased (as shown by the solid line in FIG. Shift to the positive side. Thereby, the output power corresponding to the area of the shaded portion in FIG. 3 can be increased.
  • the photo-induced electric field is formed along the surface of the element 1, carriers are accelerated along the surface of the element 1 and can move at a high speed at the compound semiconductor level. Therefore, it is possible to realize an ultrahigh-speed imaging sensor or a photodetection sensor that can cope with a light modulation wave in the GHz to THz band. Since the photoelectric conversion element 1 is a thin film type, it can also be used as a CCD sensor array.
  • the action of the metal nanostructure 30 will be described in detail. Plasmons are localized on the surface of the Au nanoparticle constituting the metal nanostructure 30. The surface plasmon and incident light resonate to generate a large electric field.
  • the periodic structure 33 of the metal nanostructure 30 enhances the sensitivity of photoelectric conversion with respect to incident light having a wavelength corresponding to the period (the arrangement interval of the first protrusions 31). That is, the periodic structure 33 causes plasmon resonance in a sensitive manner with respect to incident light having a wavelength of about 1 to 10 times, particularly about 10 times the period. Since the period of the 1st convex part 31 changes according to the periodic structure 33, the wavelength range which the metal nanostructure 30 can respond can be widened.
  • near-field light is generated around the second convex portion 32.
  • a large light-induced electric field can be generated by a synergistic effect of the near-field light and the plasmon resonance by the periodic structure 33.
  • the photoelectric conversion element 1 that is sensitive to a wide band extending from the visible light region to the infrared light region. Even if the incident light is weak, the photovoltaic force can be generated with high sensitivity.
  • the dispersion interval of the second convex portions 32 to be larger than the wavelength of incident light (visible light region to infrared light region), preferably 1 ⁇ m or more, more preferably 2 ⁇ m to 3 ⁇ m, adjacent second convex portions 32.
  • the photoelectric conversion element 1 can cope with a wide band extending from the visible light region to the infrared light region.
  • the photoelectric conversion element 1 when used as a light detection sensor, it has excellent sensitivity characteristics and can detect broadband light.
  • sunlight in a wide band can be photoelectrically converted and used for electric power. Sufficiently large electric power can be obtained not only in fine weather but also in cloudy weather. Furthermore, even after sunset, power can be obtained by photoelectrically converting infrared light scattered in the atmosphere. By absorbing infrared light, thermal conversion of infrared light can be prevented, and it can also be expected as a measure against global warming. Since the pair of electrodes 41 and 42 are disposed on the same surface (upper surface) of the element 1, the photoelectric conversion element 1 can be thinned.
  • FIG. 4 shows a second embodiment of the present invention.
  • a photoelectric conversion element 1A according to the second embodiment includes a p-type semiconductor layer 12 instead of the n-type semiconductor layer 11 of the first embodiment.
  • the p-type semiconductor layer 12 is made of p-type silicon doped with a p-type impurity such as B (boron).
  • B boron
  • the arrangement interval (period) of the first protrusions 31 in the periodic structure 33 of the p-type element 1A is preferably slightly larger than that of the n-type element 1, for example, about 60 nm to 150 nm is more preferable.
  • the dispersion interval of the second convex portions 32 in the periodic structure 33 of the p-type element 1A is preferably slightly larger than that of the n-type element 1.
  • the dispersion interval is preferably about 3 ⁇ m to 5 ⁇ m, and the upper limit is preferably about 5 ⁇ m to 6 ⁇ m.
  • the p-type photoelectric conversion element 1A is more sensitive than the n-type photoelectric conversion element 1 in a longer wavelength infrared light region (specifically, a wavelength of about 1 ⁇ m to 4 ⁇ m).
  • a wavelength of about 1 ⁇ m to 4 ⁇ m When light in this sensitivity band enters the photoelectric conversion element 1A, photocarriers are generated by photoelectric conversion at the Schottky junction of the p-Si layer 12 with the CoSix layer 20. Of these photocarriers, holes move to the p-Si layer 12 side by the electric field of the depletion layer. As a result, holes flow from the second electrode 42 into the conductive layer 20. Holes flow toward the first electrode 41 along the conductive layer 20. Holes are accumulated in the portion of the conductive layer 20 facing the first electrode 41.
  • the holes can pass through the barrier layer 50 by the tunnel effect and move to the first electrode 41. Thereby, a photo-induced current can be taken out. Accordingly, the first electrode 41 becomes an anode.
  • the second electrode becomes the cathode. In this way, the electrode 41 serving as the anode and the electrode 42 serving as the cathode can be determined, and the direction of the photoinduced current can be controlled. Therefore, the current-voltage characteristic can be reliably asymmetrical between the positive side and the negative side, and a clean diode characteristic can be obtained.
  • FIG. 5 shows a third embodiment of the present invention.
  • the third embodiment relates to a modification of the photoelectric conversion element 1 (first embodiment) having the n-type semiconductor layer 11.
  • An n-type semiconductor nanostructure 61 is provided on the surface (upper surface in FIG. 5) of the photoelectric conversion element 1 having the n-type semiconductor layer 11.
  • the n-type semiconductor nanostructure 61 is composed of zinc oxide nanowires. Zinc oxide is an n-type semiconductor.
  • the nanostructure 61 is provided so as to protrude from the surface of the photoelectric conversion element 1. Here, the nanostructure 61 protrudes from the metal nanostructure 30.
  • the nanostructure 61 may protrude from the conductive layer 20 in a portion where the metal nanostructure 30 is not coated.
  • the nanowire can be formed by CVD, PVD, sol-gel method or the like.
  • the nanostructure 61 is not limited to a nanowire, and may be a nanoneedle, a nanotube, or a nanorod.
  • the zinc oxide nanostructure 61 can enhance the photoelectric conversion sensitivity to incident light having a relatively short wavelength (ultraviolet light to visible light). Specifically, the sensitivity can be improved for light from an ultraviolet light region of less than about 0.4 ⁇ m to a visible light region of about 1 ⁇ m.
  • the quantum efficiency can be increased, and as a result, the sensitivity of the photoelectric conversion element 1 can be reliably increased.
  • FIG. 6 shows a fourth embodiment of the present invention.
  • the fourth embodiment relates to a modification of the photoelectric conversion element 1A (second embodiment) having the p-type semiconductor layer 12.
  • a p-type semiconductor nanostructure 62 is provided on the surface (upper surface in FIG. 6) of the photoelectric conversion element 1 ⁇ / b> A having the p-type semiconductor layer 12.
  • the p-type semiconductor nanostructure 62 is composed of carbon nanotubes, and is provided so as to protrude from the surface of the photoelectric conversion element 1A.
  • the p-type semiconductor nanostructure 62 protrudes from the metal nanostructure 30.
  • the nanostructure 62 may protrude from the conductive layer 20 in a portion where the metal nanostructure 30 is not coated.
  • the carbon nanotube can be formed by CVD, PVD, sol-gel method or the like.
  • the nanostructure 62 is not limited to a nanotube, and may be a nanowire, a nanoneedle, or a nanorod.
  • the carbon nanostructure 62 can increase the photoelectric conversion sensitivity to infrared light. Specifically, the sensitivity can be improved for infrared light of about 2 ⁇ m to about 4 ⁇ m. By configuring the nanostructure 62 with carbon nanotubes, the quantum efficiency can be increased, and as a result, the sensitivity of the photoelectric conversion element 1A can be reliably increased.
  • FIG. 7 shows a fifth embodiment of the present invention.
  • the fifth embodiment relates to a modification of the polarity determining layer.
  • the n-type photoelectric conversion element 1 is provided with a convex layer 51 as a polarity determining layer instead of the barrier layer 50 described above.
  • the convex layer 51 is formed integrally with the n-type semiconductor layer 11. A portion near the first electrode 41 on the surface (upper surface) of the semiconductor layer 11 protrudes, and this protruding portion constitutes the convex layer 51.
  • the convex layer 51 is interposed between the first electrode 41 and the end of the conductive layer 20 on the first electrode 41 side.
  • the protruding height of the convex layer 51 is about the same as the thickness of the conductive layer 20, for example, about 1 nm to 10 nm, preferably about several nm.
  • the width dimension (left and right dimensions in FIG. 7) of the convex layer 51 is, for example, 0. It is several mm to several mm, preferably about 1 mm. In FIG. 7, the protrusion height (vertical dimension) of the convex layer 51 is exaggerated with respect to the width (horizontal dimension).
  • One side surface (left side surface in FIG. 7) of the convex layer 51 is in Schottky contact with the end surface of the conductive layer 20.
  • the other side surface (right side surface in FIG. 7) of the convex layer 51 is in ohmic contact with the first electrode 41.
  • the metal nanostructure 30 is formed so as to straddle the upper surface of the convex layer 51 from the conductive layer 20.
  • the metal nanostructure 30 may be provided only on the upper surface of the convex layer 51. Alternatively, the metal nanostructure 30 may be provided only on the upper surface of the conductive layer 20.
  • photocarriers are generated at the Schottky junction between the bottom of the conductive layer 20 and the semiconductor layer 11. Photo carriers are also generated at the Schottky contact portion between the right end portion and the convex layer 51. The electrons of the carriers flow to the convex layer 51 side and thus to the first electrode 41 by a depletion layer electric field between the conductive layer 20 and the convex layer 51. Therefore, the first electrode 41 can be reliably used as a cathode.
  • the second electrode 42 can be reliably an anode.
  • the barrier layer 50 is not limited to an insulator and may be a semiconductor.
  • the barrier layer 50 only needs to be interposed between at least a portion between the conductive layer 20 and the first electrode 41, and does not necessarily have to be interposed between the conductive layer 20 and the electrode 41.
  • a plurality of embodiments may be combined with each other.
  • a p-type semiconductor nanostructure 62 may be provided on the surface of the element 1 instead of the n-type semiconductor nanostructure 61.
  • an n-type semiconductor nanostructure 61 may be provided on the surface of the element 1A.
  • the n-type semiconductor nanostructure 61 and the p-type semiconductor nanostructure 62 may be mixed on the surface of the element 1 or 1A.
  • n-type semiconductor nanostructure 61 n-type GaN or the like may be used instead of zinc oxide.
  • p-type semiconductor nanostructure 62 p-type GaN or the like may be used instead of carbon.
  • the polarity determination structure of the fifth embodiment (FIG. 7) may be applied to the second to fourth embodiments (FIGS. 4 to 6).
  • the first electrode 41 can be an anode and the second electrode 42 can be a cathode.
  • the metal component constituting the conductive layer 20 is not limited to Co, but may be Fe, W, Ni, Al, Ti, or the like.
  • the metal component constituting the metal nanostructure 30 is not limited to Au, and may be Ag, Pt, Cu, Pd, or the like. The manufacturing steps of the photoelectric conversion elements 1 and 1A may be changed or changed as appropriate.
  • Example 1 fabrication and observation of metal nanostructures were performed.
  • the metal nanostructure was produced as follows.
  • a Co film was formed on the entire surface of a substantially square n-type Si substrate by sputtering.
  • the thickness of the Co film was 8 nm.
  • the thickness of the Au film was about 10 nm.
  • annealing treatment was performed.
  • the atmosphere gas for the annealing treatment was He 100%.
  • the annealing temperature was 600 ° C.
  • the annealing time was 3 minutes.
  • FIGS. 8A and 8B show the images. It was confirmed that the fine particles of the Au film diffused along the surface of the CoSix film, and a metal nanostructure was naturally formed around the Au film. The morphology of the metal nanostructure was different depending on the location. As shown in FIG. 2B, a fractal structure was formed in the metal nanostructure depending on the location.
  • FIG. 9 shows the image.
  • FIG. 10 duplicates and explains the image of FIG. Sub-order or nano-order irregularities were formed on the surface of the metal nanostructure, and a cluster structure or fractal structure was confirmed. Furthermore, a large number of periodic structures 33 and a large number of second convex portions 32 were confirmed in the above-described uneven shape.
  • Each periodic structure 33 includes a plurality of first protrusions 31, and the first protrusions 31 are arranged at random periods (arrangement intervals) according to the periodic structure 33.
  • the period of the periodic structure 33 was approximately 100 nm or less.
  • the protrusion height of each first protrusion 31 was about 10 nm to 20 nm.
  • Each of the second convex portions 32 is disposed so as to overlap with a certain periodic structure 33 or is disposed in the vicinity of the periodic structure 33.
  • the protrusion height of the second protrusion 32 is larger than the protrusion height of the first protrusion 31 and is about 50 nm to 200 nm.
  • the dispersion interval of the second protrusions 32 was about 2 ⁇ m to 3 ⁇ m.
  • the present invention is applicable to, for example, an optical sensor or a solar cell.
  • Photoelectric conversion element 11 n-type semiconductor layer 12 p-type semiconductor layer 20 conductive layer 30 metal nanostructure 31 first convex portion 32 second convex portion 33 periodic structure 41 first electrode 42 second electrode 50 barrier layer (determined polarity) layer) 51 Convex layer (polarity determination layer) 61 ZnO nanowire (n-type semiconductor nanostructure) 62 Carbon nanotube (p-type semiconductor nanostructure)

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  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

L'invention concerne un élément convertisseur photoélectrique, dont les caractéristiques de courant/tension sont asymétriques en positif-négatif de manière fiable, démontrant des caractéristiques de diode propres, et qui est en outre capable d'une génération accrue d'électricité. Une couche conductrice (20) est empilée sur une couche semi-conductrice (11) d'un élément convertisseur photoélectrique (1), et une nanostructure métallique (30), comprenant une pluralité de structures périodiques (33) présentant une période aléatoire, est stratifiée dessus. Une paire d'électrodes (41, 42) sont disposées sur la couche conductrice (20), espacées l'une par rapport à l'autre. Une couche de fixation de polarité (50) est intercalée entre la première électrode (41) de la paire d'électrodes (41, 42) et la couche conductrice (20). Il est préférable que la couche de fixation de polarité (50) soit configurée dans un isolant d'une épaisseur inférieure à 1 nm.
PCT/JP2011/062603 2010-06-03 2011-06-01 Élément convertisseur photoélectrique WO2011152458A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2523226A1 (fr) * 2010-06-10 2012-11-14 Nusola Inc. Dispositif de production d'énergie lumineuse

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019169523A (ja) 2018-03-22 2019-10-03 浜松ホトニクス株式会社 光検出素子
JP7351241B2 (ja) 2020-03-02 2023-09-27 信越半導体株式会社 化合物半導体エピタキシャルウェーハ及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108376A (ja) * 1982-11-30 1984-06-22 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド 光検出器
JPH10509806A (ja) * 1994-08-12 1998-09-22 ブラント・エイ・ペインター，ザ・サード 光電子カプラ
WO2005098966A1 (fr) * 2004-04-05 2005-10-20 Nec Corporation Photodiode et une méthode pour fabriquer le même
JP2010021189A (ja) * 2008-07-08 2010-01-28 Omron Corp 光電デバイス
WO2010106718A1 (fr) * 2009-03-18 2010-09-23 株式会社 東芝 Pile solaire comprenant une électrode ayant une structure maillée et procédé pour sa fabrication
JP2011040553A (ja) * 2009-08-11 2011-02-24 Si-Nano Inc 薄膜光電変換素子と薄膜光電変換素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177480A (ja) * 1988-12-28 1990-07-10 Nippon Mining Co Ltd 光半導体装置の製造方法
DE4410799C2 (de) * 1994-03-29 1996-02-08 Forschungszentrum Juelich Gmbh Diode
JPH08116083A (ja) * 1994-10-18 1996-05-07 Nippon Telegr & Teleph Corp <Ntt> 半導体光検出器
JP2000223736A (ja) * 1999-01-28 2000-08-11 Nippon Telegr & Teleph Corp <Ntt> 金属−半導体−金属型受光素子
JP5067710B2 (ja) * 2007-08-09 2012-11-07 ｎｕｓｏｌａ株式会社 光電変換素子及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108376A (ja) * 1982-11-30 1984-06-22 ウエスターン　エレクトリック　カムパニー，インコーポレーテッド 光検出器
JPH10509806A (ja) * 1994-08-12 1998-09-22 ブラント・エイ・ペインター，ザ・サード 光電子カプラ
WO2005098966A1 (fr) * 2004-04-05 2005-10-20 Nec Corporation Photodiode et une méthode pour fabriquer le même
JP2010021189A (ja) * 2008-07-08 2010-01-28 Omron Corp 光電デバイス
WO2010106718A1 (fr) * 2009-03-18 2010-09-23 株式会社 東芝 Pile solaire comprenant une électrode ayant une structure maillée et procédé pour sa fabrication
JP2011040553A (ja) * 2009-08-11 2011-02-24 Si-Nano Inc 薄膜光電変換素子と薄膜光電変換素子の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M. FUKUDA ET AL.: "Light detection enhanced by surface plasmon resonance in metal film", APPLIED PHYSICS LETTERS, vol. 96, 15 April 2010 (2010-04-15), pages 153107-1 - 153107-3 *
M. JESTL ET AL.: "Polarization-sensitive surface plasmon Schottky detectors", OPTICS LETTERS, vol. 14, no. 14, 15 July 1989 (1989-07-15), pages 719 - 721 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2523226A1 (fr) * 2010-06-10 2012-11-14 Nusola Inc. Dispositif de production d'énergie lumineuse
EP2523226A4 (fr) * 2010-06-10 2014-04-09 Nusola Inc Dispositif de production d'énergie lumineuse
JP5525047B2 (ja) * 2010-06-10 2014-06-18 ｎｕｓｏｌａ株式会社 光発電装置

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