JP2011040553A - 薄膜光電変換素子と薄膜光電変換素子の製造方法 - Google Patents
薄膜光電変換素子と薄膜光電変換素子の製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 192
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 131
- 239000002184 metal Substances 0.000 claims abstract description 125
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 98
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000010703 silicon Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 58
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 238000009792 diffusion process Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 22
- 239000005543 nano-size silicon particle Substances 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 174
- 229910019044 CoSix Inorganic materials 0.000 description 31
- 230000004888 barrier function Effects 0.000 description 16
- 230000005284 excitation Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000002082 metal nanoparticle Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
【解決手段】シリコン基板の表面に第1金属とシリコンが拡散して形成される金属シリサイド層と、シリコン基板の表面の第2金属薄膜層の積層部位に形成される導電薄膜層と、前記金属シリサイド層と前記導電薄膜層との間のシリコン基板の表面付近にシリコンのナノ粒子が拡散して形成されるシリコン拡散部とを備え、シリコン基板との積層方向にショットキー界面が形成される金属シリサイド層若しくは導電薄膜層へ光を照射し、シリコン基板の表面の金属シリサイド層と導電薄膜層間に光誘起電流を発生させる。
【選択図】図1
Description
。
2 n−Si基板(シリコン基板)
3 CoSix層(金属シリサイド層)
4 アノード電極
5 カソード電極
6 シリコン拡散部
7 Co薄膜(第1金属薄膜層)
8 Au薄膜(第2金属薄膜層)
9 導電薄膜層
Claims (6)
- 第1金属からなる第1金属薄膜層と、第1金属薄膜層上の一部に重ねて、第2金属からなる第2金属薄膜層を積層させたシリコン基板をアニール処理し、
シリコン基板の表面に第1金属とシリコンが拡散して形成される金属シリサイド層と、
シリコン基板の表面の第2金属薄膜層の積層部位に形成される導電薄膜層と、
前記金属シリサイド層と前記導電薄膜層との間のシリコン基板の表面付近にシリコンのナノ粒子が拡散して形成されるシリコン拡散部とを備え、
シリコン基板との積層方向にショットキー界面が形成される金属シリサイド層若しくは導電薄膜層へ光を照射し、シリコン基板の表面の金属シリサイド層と導電薄膜層間に光誘起電流を発生させることを特徴とする薄膜光電変換素子。 - 導電薄膜層の厚さが100nm未満であり、金属シリサイド層の厚さは導電薄膜層より更に薄いことを特徴とする薄膜光電変換素子。
- 第1金属が、Co、Fe、W、Ni、Al、Tiのいずれかであり、第2金属が、Auであることを特徴とする請求項1又は請求項2に記載の薄膜光電変換素子。
- シリコン基板上に第1金属からなる第1金属薄膜層を成膜する第1工程と、
第1金属薄膜層上の一部に第2金属からなる第2金属薄膜層を成膜する第2工程と、
シリコン基板上に積層された第1金属薄膜層と第2金属薄膜層をアニール処理し、基板上に第1金属とシリコンが拡散する金属シリサイド層と、第2金属薄膜層の積層部位の導電薄膜層と、前記金属シリサイド層と前記導電薄膜層との間でシリコン基板の表面付近にシリコンのナノ粒子が拡散するシリコン拡散部を形成する第3工程とを備え、
シリコン基板との積層方向にショットキー界面が形成される金属シリサイド層若しくは導電薄膜層へ光を照射し、シリコン基板の表面の金属シリサイド層と導電薄膜層間に光誘起電流を発生させることを特徴とする薄膜光電変換素子の製造方法。 - 導電薄膜層の厚さが100nm未満であり、金属シリサイド層の厚さは導電薄膜層より更に薄いことを特徴とする請求項4に記載の薄膜光電変換素子の製造方法。
- 第1金属が、Co、Fe、W、Ni、Al、Tiのいずれかであり、第2金属が、Auであることを特徴とする請求項4又は請求項5に記載の薄膜光電変換素子の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/680,827 US20110215434A1 (en) | 2009-08-11 | 2008-09-14 | Thin-film photoelectric conversion device and method of manufacturing thin-film photoelectric conversion device |
JP2009186248A JP5147795B2 (ja) | 2009-08-11 | 2009-08-11 | 薄膜光電変換素子と薄膜光電変換素子の製造方法 |
CA2769565A CA2769565A1 (en) | 2009-08-11 | 2009-09-14 | Thin-film photoelectric conversion device and method of manufacturing thin-film photoelectric conversion device |
PCT/JP2009/004551 WO2011018829A1 (ja) | 2009-08-11 | 2009-09-14 | 薄膜光電変換素子と薄膜光電変換素子の製造方法 |
CN2009801609527A CN102598290A (zh) | 2009-08-11 | 2009-09-14 | 薄膜光电转换元件及薄膜光电转换元件的制造方法 |
EP09848248A EP2466645A1 (en) | 2009-08-11 | 2009-09-14 | Thin-film photoelectric conversion element and method for manufacturing thin-film photoelectric conversion element |
KR1020127003195A KR20120038999A (ko) | 2009-08-11 | 2009-09-14 | 박막 광전 변환 소자와 박막 광전 변환 소자의 제조 방법 |
IL217842A IL217842A0 (en) | 2009-08-11 | 2012-01-30 | Thin-film photoelectric conversion device and method of manufacturing thin-film photoelectric conversion device |
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JP2009186248A JP5147795B2 (ja) | 2009-08-11 | 2009-08-11 | 薄膜光電変換素子と薄膜光電変換素子の製造方法 |
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JP2011040553A true JP2011040553A (ja) | 2011-02-24 |
JP5147795B2 JP5147795B2 (ja) | 2013-02-20 |
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US (1) | US20110215434A1 (ja) |
EP (1) | EP2466645A1 (ja) |
JP (1) | JP5147795B2 (ja) |
KR (1) | KR20120038999A (ja) |
CN (1) | CN102598290A (ja) |
CA (1) | CA2769565A1 (ja) |
IL (1) | IL217842A0 (ja) |
WO (1) | WO2011018829A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011152460A1 (ja) * | 2010-06-03 | 2011-12-08 | 株式会社Si-Nano | 光電変換素子及びその製造方法 |
WO2011152458A1 (ja) * | 2010-06-03 | 2011-12-08 | 株式会社Si-Nano | 光電変換素子 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103098224A (zh) | 2010-06-10 | 2013-05-08 | 庐光股份有限公司 | 光发电装置 |
JP5803419B2 (ja) | 2011-08-19 | 2015-11-04 | セイコーエプソン株式会社 | 傾斜構造体、傾斜構造体の製造方法、及び分光センサー |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6442858A (en) * | 1987-08-11 | 1989-02-15 | Nec Corp | Metal semiconductor junction diode and manufacture thereof |
JPH06151809A (ja) * | 1992-10-30 | 1994-05-31 | Toshiba Corp | 半導体装置 |
JPH09510832A (ja) * | 1994-03-29 | 1997-10-28 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | ダイオードおよびそのような素子を含む部品 |
Family Cites Families (3)
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---|---|---|---|---|
JPH06147993A (ja) * | 1991-09-30 | 1994-05-27 | Terumo Corp | 赤外線センサ素子およびその製造方法 |
JP4488550B2 (ja) | 1999-06-09 | 2010-06-23 | 富士電機システムズ株式会社 | 薄膜太陽電池とその製造方法 |
JP4948778B2 (ja) * | 2005-03-30 | 2012-06-06 | Tdk株式会社 | 太陽電池およびその色調整方法 |
-
2008
- 2008-09-14 US US12/680,827 patent/US20110215434A1/en not_active Abandoned
-
2009
- 2009-08-11 JP JP2009186248A patent/JP5147795B2/ja not_active Expired - Fee Related
- 2009-09-14 KR KR1020127003195A patent/KR20120038999A/ko not_active Application Discontinuation
- 2009-09-14 CN CN2009801609527A patent/CN102598290A/zh active Pending
- 2009-09-14 WO PCT/JP2009/004551 patent/WO2011018829A1/ja active Application Filing
- 2009-09-14 EP EP09848248A patent/EP2466645A1/en not_active Withdrawn
- 2009-09-14 CA CA2769565A patent/CA2769565A1/en not_active Abandoned
-
2012
- 2012-01-30 IL IL217842A patent/IL217842A0/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6442858A (en) * | 1987-08-11 | 1989-02-15 | Nec Corp | Metal semiconductor junction diode and manufacture thereof |
JPH06151809A (ja) * | 1992-10-30 | 1994-05-31 | Toshiba Corp | 半導体装置 |
JPH09510832A (ja) * | 1994-03-29 | 1997-10-28 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | ダイオードおよびそのような素子を含む部品 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011152460A1 (ja) * | 2010-06-03 | 2011-12-08 | 株式会社Si-Nano | 光電変換素子及びその製造方法 |
WO2011152458A1 (ja) * | 2010-06-03 | 2011-12-08 | 株式会社Si-Nano | 光電変換素子 |
JP5437486B2 (ja) * | 2010-06-03 | 2014-03-12 | nusola株式会社 | 光電変換素子 |
JP5443602B2 (ja) * | 2010-06-03 | 2014-03-19 | nusola株式会社 | 光電変換素子及びその製造方法 |
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US20110215434A1 (en) | 2011-09-08 |
WO2011018829A1 (ja) | 2011-02-17 |
KR20120038999A (ko) | 2012-04-24 |
JP5147795B2 (ja) | 2013-02-20 |
CA2769565A1 (en) | 2011-02-17 |
CN102598290A (zh) | 2012-07-18 |
EP2466645A1 (en) | 2012-06-20 |
IL217842A0 (en) | 2012-03-29 |
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