EP0645890B1 - BICMOS-Logikschaltung - Google Patents

BICMOS-Logikschaltung Download PDF

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Publication number
EP0645890B1
EP0645890B1 EP94115119A EP94115119A EP0645890B1 EP 0645890 B1 EP0645890 B1 EP 0645890B1 EP 94115119 A EP94115119 A EP 94115119A EP 94115119 A EP94115119 A EP 94115119A EP 0645890 B1 EP0645890 B1 EP 0645890B1
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EP
European Patent Office
Prior art keywords
bipolar transistor
clamping
output
base
terminal
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EP94115119A
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English (en)
French (fr)
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EP0645890A2 (de
EP0645890A3 (de
Inventor
Hitoshi C/O Nec Corporation Okamura
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NEC Corp
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NEC Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H03K19/0136—Modifications for accelerating switching in bipolar transistor circuits by means of a pull-up or down element

Definitions

  • the invention relates to semiconductor integrated circuits, and more particularly to an improvement in semiconductor BiCMOS logic circuits.
  • BiCMOS logic circuits From US 5 107 141 and from EP-A-0 099 100 BiCMOS logic circuits are known.
  • the problem of the known circuits is the capacitance of the pull-down bipolar transistor so that the rise and fall time is high and high speed performance is low.
  • BiCMOS logic gate circuits Semiconductor integrated circuits including BiCMOS logic gate circuits have been known and BiCMOS circuits may be useful in the form of various logic circuits such as an invertor circuit.
  • One of conventional logic circuits including BiCMOS circuits will be described with reference to FIG. 1.
  • the conventional BiCMOS logic circuit forms an invertor circuit that has an input terminal 1 and an output terminal 2 and is biased between a high voltage line 3 for supplying a high voltage VCC and a ground line 4 for supplying a ground voltage GND.
  • the invertor circuit including the BiCMOS transistor comprises first and second npn bipolar transistors 17 and 18 and first and second base driving circuits 23 and 24.
  • the first base driving circuit 23 is electrically connected to the input terminal 1 and a base of the first bipolar transistor 17.
  • the second base driving circuit 23 is electrically connected to the input terminal 1 and a base of the second bipolar transistor 18.
  • the first and second base driving circuits 23 and 24 are connected to each other between the high voltage line 3 and the ground line 4 in which the first base driving circuit 23 is connected to the high voltage line 3 and the ground line 4, while the second base driving circuit 24 is connected through the first base driving circuit 23 to the high voltage line 3 and connected to the ground line 4.
  • the first base driving circuit 23 comprises complementary MOS transistor circuits including a first p-channel MOS transistor 19 and an n-channel MOS transistor 20.
  • the first p-channel MOS transistor 19 has a gate electrode electrically connected to the input terminal 1, a source electrically connected to the high voltage line 3 and a drain electrically connected to the base of the first bipolar transistor 17.
  • the second n-channel MOS transistor 20 has a gate electrode electrically connected to the input terminal 1, a source electrically connected to the ground line 4 and a drain electrically connected to the base of the first bipolar transistor 17 or connected to the drain of the p-channel MOS transistor 19.
  • the second base driving circuit 24 comprises a third n-channel MOS transistor 21 and a resistance 22.
  • the third n-channel MOS transistor 21 has a gate electrode electrically connected to the input terminal 1, a source electrically connected through the resistance 22 to the ground line 4 and connected to the base of the second bipolar transistor 18 and a drain electrically connected to the output terminal 2.
  • the first bipolar transistor 17 has the base electrically connected to the drains of the first p-channel and second n-channel MOS transistors 19 and 20, a collector electrically connected to the high voltage line 3 and an emitter electrically connected to the output terminal 2.
  • the second bipolar transistor 18 has the base electrically connected to the source of the third n-channel transistor 21, a collector electrically connected to the output terminal 2 and an emitter electrically connected to the ground line 4.
  • a potential of the base region is always kept higher than a potential of the emitter by the voltage V F at which the bipolar transistor shows on/off switching operation where the voltage V F is the forward bias applied between the base and the emitter.
  • the voltage V F is free from any bias between the collector and the emitter, but be defined by the material of the bipolar transistor and the size of the emitter.
  • a difference in the Fermi level between the base region and the emitter region is always kept at the voltage V F provided that the bipolar transistor is in the on-state. Then, the potential of the output terminal 2 is raised up to be kept higher than the potential of the base of the first bipolar transistor 17 by the voltage V F .
  • the third n-channel MOS transistor 21 turns OFF so that a base current of the second bipolar transistor 18 comes into OFF thereby a charge that has been accumulated in the base region of the second bipolar transistor 18 is discharged and then flows through the resistance 22 to the ground line 4, resulting in that the second bipolar transistor 18 turns OFF.
  • the discharge is continued until the potential of the base region of the second bipolar transistor reaches the ground level.
  • the potential of the output terminal 2 is raised up to a lower level by the voltage V F than the high voltage V CC so that the first bipolar transistor turns OFF so that the potential of the output terminal 2 is kept at a potential lower by the voltage V F than the high voltage V CC .
  • the potential of the output terminal 2 is kept in the high level of V CC - V F . Consequently, when the input terminal 1 receives the low level signal, the high level signal V CC - V F appears at the output terminal 2.
  • the potential of the input terminal 1 is shifted from the low level to the high level, the first p-channel MOS transistor 19 turns OFF, while the second n-channel MOS transistor 20 turns ON at this time the first bipolar transistor 17 is still in the ON state. Then, the base potential of the first bipolar transistor is kept at a higher level by the voltage V F than the potential level of the emitter or the potential of the output terminal 2. A charge accumulated in the base region of the first bipolar transistor 17 is discharged and flows through the ON state second n-channel MOS transistor 20 to the ground line 4. Then, the base potential of the first bipolar transistor 17 is dropped down with being kept at a higher potential level by the voltage V F than the emitter potential or the potential of the output terminal 2.
  • the base potential of the first bipolar transistor 17 comes into a lower level than the voltage V F , the base current of the first bipolar transistor 17 comes into OFF so that the first bipolar transistor 17 turns OFF.
  • the third n-channel MOS transistor 21 tuns ON by the shifting of the input signal into the high level so that the high voltage V CC -V F of the output terminal before the potential drop is supplied to the base of the second bipolar transistor 18 through the ON state third n-channel MOS transistor 21 that makes the voltage level of the output terminal 2 be dropped thereby a parasitic capacitance of the base of the second bipolar transistor 18 is charged. Then, the base potential of the second bipolar transistor 18 is raised up to the voltage V F so that the second bipolar transistor 18 turns ON.
  • the base potential of the second bipolar transistor 18 is kept at a higher level by the voltage V F than an emitter potential level.
  • the turning ON of the second bipolar transistor 18 makes the output terminal 2 conductive to the ground line 4. This permits a rapid potential drop of the output terminal 2, resulting in a low potential level of the output terminal.
  • the maximum bias applied between the gate and the source corresponds to the voltage V CC - V F since the base potential of the second bipolar transistor 18 is kept at a higher level by the voltage V F than the emitter potential or the ground potential. Since the voltage V F is the constant vale as described above.
  • the third n-channel MOS transistor 21 has an increased threshold voltage V th due to the substrate effetc caused by a substrate bias.
  • the increased threshold voltage V th results in a delay in the turning ON of the third n-channel MOS transistor 21 as well as in a considerable reduction of a drain current of the third n-channel MOS transistor 21. This results in a delay in charging up of the base parasitic capacitance of the second bipolar transistor 18 thereby resulting in a delay in the turning ON of the second bipolar transistor 18.
  • the description will focus on a power dissipation by the BiCMOS gate circuits with reference to FIG. 2.
  • the power dissipation of the BiCMOS gate circuits may be considered to be divided into a power required in charging and discharging a load of the bipolar transistor and a power required in charging and discharging a parasitic capacitance of any transistor in the gate circuits.
  • the power required in charging and discharging the parasitic capacitance of the transistor may be considered to be divided into powers required in charging and discharging the MOS transistor and the bipolar transistor respectively.
  • the parasitic capacitance of the MOS transistor is almost proportional to the gate width or the channel width.
  • the power dissipation is also proportional to the gate width or the channel width of the MOS transistor as illustrated in FIG. 2 in which a measurement was carried out by use of an invertor chain circuit comprising a series connection of a plurality of invertor circuits.
  • the load capacitance is the external factor that depends upon the state of the use of the gate circuits.
  • the power dissipation of the BiCMOS gate circuit primary depends upon the gate width of the MOS transistor.
  • the invention provides a novel BiCMOS logic gate circuitry that comprises an input terminal for receiving input logic signals : an output terminal connected to an external load for permitting output logic signals to be outputted ; a push pull circuit including first and second bipolar transistors electrically connected in series between a high voltage line and a low voltage line, and the push pull circuit being connected to the output terminal through an intermediate point between the first and second bipolar transistors, a logic gate circuit including at least a pair of an n-channel MOS transistor and a p-channel MOS transistor and being electrically connected to bases of the first and second bipolar transistors and a gate of each of the n-channel and p-channel MOS transistors being electrically connected to the input terminal ; and a clamping circuit being electrically connected to the logic gate circuit as well as being electrically connected to a base of at least one of the first and second bipolar transistors, the clamping circuit including at least a bipolar transistor for clamping a base potential of the one bipolar transistor in the vicinity of a potential level at which the bi
  • FIG. 1. is a circuit diagram illustrative of the conventional BiCMOS logic gate circuit.
  • FIG. 2 is a diagram illustrative of a power dissipation versus a channel width in p-channel and n-channel MOS transistors.
  • FIG. 3 is a circuit diagram illustrative of a novel BiCMOS logic gate circuit in an embodiment according to the present invention.
  • FIGS. 4A to 4E are circuit diagrams illustrative of clamping circuits to be involved in a novel BiCMOS logic gate circuit in an embodiment according to the present invention.
  • FIG. 5 is a diagram illustrative of time delays of signal transmissions versus power source voltages.
  • FIG. 6 is a circuit diagram illustrative of another BiCMOS logic gate circuit (not claimed).
  • FIG. 7 is a circuit diagram illustrative of a novel BiCMOS logic gate circuit in an embodiment according to the present invention.
  • FIG. 8 is a circuit diagram illustrative of a novel BiCMOS logic gate circuit comprising BICMOS inverters according to the present invention.
  • FIG. 3 An embodiment according to the present invention will be described in detail with reference to FIG. 3 in which a novel BiCMOS gate logic circuit is provided, that may serve as an invertor circuit.
  • the novel BiCMOS logic gate circuity of this embodiment is biased between a high voltage line 3 for supplying a high voltage V CC and a ground line 4 for supplying a ground voltage GND.
  • the BiCMOS logic gate circuit in the form of the invertor circuit has an input terminal 1 for receiving any input signal and an output terminal 2 through which any output signal is outputted.
  • the BiCMOS logic gate circuit comprises an output driving section 20 for generating any output signal, a base driving section 21 for driving any base of bipolar transistor involved in the output driving section 20 and a base clamping section 22 for clamping or restricting a base potential of one of the bipolar transistors involved in the output driving section 20 into the vicinity of a voltage V F as a base-emitter forward bias at which the bipolar transistor turns ON.
  • the output driving section 20 comprises first and second npn bipolar transistors 5 and 6 in the form of the totem pole connection between the high voltage line 3 and the ground line 4.
  • the first bipolar transistor 5 has a base electrically connected to the base driving section 21 for being driven by the base driving logic circuit in the base driving section 21, a collector electrically connected to the high voltage line 3 and an emitter electrically connected to the output terminal 2.
  • the second bipolar transistor 6 has a base electrically connected through the base clamping section 22 to the base driving section 21 so that the base potential of the second bipolar transistor 6 be kept or restricted in the vicinity of the voltage V F as a base-emitter forward bias at which the second bipolar transistor 6 turns ON, a collector electrically connected to the output terminal 2 and an emitter electrically connected to the ground line 4.
  • the base driving section 21 comprises a p-channel MOS transistor 7 and first and second n-channel MOS transistors 8 and 9.
  • the p-channel MOS transistor 7 has a gate electrically connected to the input terminal 1 for receiving the input signal, a source electrically connected to the high voltage line 3 and a drain electrically connected to the base of the first bipolar transistor 5.
  • the first n-channel MOS transistor 8 has a gate electrically connected to the input terminal 1 for receiving the input signal, a source electrically connected through the base clamping section 22 to the base of the second bipolar transistor 6 and a drain electrically connected to the base of the first bipolar transistor 5.
  • the second n-channel MOS transistor 9 has a gate electrically connected to the input terminal 1 for receiving the input signal, a source electrically connected through the base cramping section 22 to the base of the second bipolar transistor 6 and a drain electrically connected to the output terminal 2.
  • the clamping section 22 comprises a third npn bipolar transistor 10, first to third resistances 11, 12 and 13 and a capacitor 14.
  • the first resistance 11 is electrically connected between the high voltage line 3 and the base of the second bipolar transistor 6.
  • the second resistance 12 is electrically connected between the source of the second n-channel MOS transistor 9 in the base driving section 21 and one electrode of the capacitor 14 having the opposite electrode connected to the ground line 4.
  • the third resistance 13 is electrically connected between the base of the second bipolar transistor 6 connected to the first resistance 11 and a collector of the third bipolar transistor 10 which has an emitter electrically connected to the ground line 4 and a base electrically connected to the intermediate point between the capacitor 14 and the second resistance 12.
  • the base of the second bipolar transistor 6 is electrically connected to the intermediate point between the first and third resistances 11 and 13.
  • the above logic gate circuity is designed to clamp the base potential of the second bipolar transistor 6. This will be apparent from the following descriptions as to the operation of the BiCMOS logic gate circuit acting as the invertor circuit.
  • the descriptions will focus on the operation of the BiCMOS logic gate circuit when the input signal applied to the input terminal 1 is shifted from a high level into a low level.
  • the p-channel MOS transistor 7 turns OFF, while Lhe first and second n-channel MOS transistors 8 and 9 turn ON thereby a base potential of the first bipolar transistor 5 is dropped from the high voltage V CC where the first bipolar transistor is still in the ON state.
  • a potential of the output terminal 2 or an emitter potential of the first bipolar transistor 5 is also dropped from V CC - V F with being kept lower than the base potential by the voltage V F .
  • a potential of the base region is always kept higher than a potential of the emitter by the voltage V F at which the bipolar transistor shows on/off switching operation where the voltage V F is the forward bias applied between the base and the emitter.
  • the voltage V F is free from any bias between the collector and the emitter, but be defined by the material of the bipolar transistor and the size of the emitter.
  • a difference in the Fermi level between the base region and the emitter region is always kept at the voltage V F provided that the bipolar transistor is in the ON-state.
  • the ON state of the first n-channel MOS transistor 8 permits a current flow from the base region of the first bipolar transistor 5 through the first n-channel MOS transistor 8 to the base region of the second bipolar transistor 6. Then, the second bipolar transistor 6 turns ON. A base potential of the second bipolar transistor 6 is held at the voltage V F by the cramping circuit of the base cramping section 22. A drain current of the first n-channel MOS transistor 8 is free from charge of a base parasitic capacitance of the second bipolar transistor but be supplied to the base of the second bipolar transistor 6 simply as the base current for switching ON thereby the second bipolar transistor 6 is allowed to show an immediate switching ON operation.
  • the base potential of the first bipolar transistor 5 is clamped or restricted by the clamping circuit of the base clamping section 22 so as not to come into a lower level than the voltage V F .
  • a load capacitance not illustrated but connected to the output terminal 2 is relatively large, a poor current is supplied from the base of the first bipolar transistor 5 through the first n-channel MOS transistor 8 to the base of the base of the second bipolar transistor 6. Then, the base current of the second bipolar transistor 6 is insufficient thereby resulting in a difficulty in a rapid current induction from the output terminal 2 through the second bipolar transistor 6.
  • the second n-channel MOS transistor 9 may ensure the base current of the second bipolar transistor 6 until the output voltage comes into the low level.
  • the low level appearing at the output terminal 2 is so clamped or restricted as not to come into a lower level than the voltage V F . Then, this may prevent any forward bias between the base and collector of the second bipolar transistor 6. This may keep the second bipolar transistor 6 from any saturation state. Further, the second n-channel MOS transistor 9 may prevent any leakage current of the first bipolar transistor 5 as well as inreversible voltage level increase of the output terminal 2 due to any noise and the like on a wiring line connected to the output terminal 2. This may prevent any error operation of the logic gate circuit. Then, the output voltage of the output terminal 2 is dropped from the high level V CC - V F down to the low level V F .
  • the base potential of the second bipolar transistor 6 is clamped or restricted in the vicinity of the voltage V F . Therefore, no or almost no charge of the parasitic capacitance of the hase region of the second bipolar transistor 6 is required. This results in an immediate or high speed switching ON operation of the second bipolar transistor 6 thereby permitting a rapid or high speed output voltage drop of the output terminal 2.
  • No or almost no requirement to charge the parasitic capacitance of the base region of the second bipolar transistor 6 may further permit a very small gate width or a very small channel width of the first and second n-channel MOS transistor.
  • the second n-channel MOS transistor requires a gate width equal to or wider than 10 micrometers.
  • the lowering of the high power source voltage requires a further enlargement of the gate width of the MOS transistor.
  • a ratio of the gate length to the gate width not more than 1 : 10 results in a considerable slow of speed in operation of the MOS transistor.
  • the novel BiCMOS logic gate circuitry including the base clamping circuit is quite different from the prior art.
  • a ratio of the gate length and the gate width being 1 : 2.5 may prevent any deterioration of a high speed performance.
  • the small gate width of the MOS transistor may furthermore allow a considerable improvement in integration of the logic gate circuit as well as a considerable reduction of the power dissipation.
  • the above future of the present invention may moreover allow the novel, BiCMOS logic gate circuits to be driven by a low power source voltage without any deterioration of the circuit performance in the high speed.
  • a subsequent description will focus on the operation of the novel, logic gate circuits when the input level of the input terminal 1 is shifted from the high level into the low level. Then, the p-channel MOS transistor 7 turns ON, while the first and second n-channel MOS transistors 8 and 9 turn OFF thereby the base potential of the first bipolar transistor 5 is raised.
  • the emitter potential of the first bipolar transistor 5 or the output potential of the output terminal 2 is also raised with being kept at a lower potential level by the voltage V F than the base potential.
  • a speed of the potential raising is the same between the base potential and the output potential of the output terminal 2. The speed of the potential raising is defined by both the load capacitance not illustrated but connected to the output terminal 2 and an emitter current of the first bipolar transistor 5.
  • the emitter current has the maximum value defined by the high injection effect of the bipolar transistor.
  • the base current of the second bipolar transistor 6 comes into OFF by the OFF states of the first and second n-channel MOS transistors 8 and 9. Then, the second bipolar transistor 6 turns OFF.
  • the base potential of the second bipolar transistor 6 is held in the vicinity of the voltage V F by the clamping circuits of the base clamping section 22. Since the second bipolar transistor 6 is in insaturation state, it is not required to have the base potential of the second bipolar transistor 6 lower than the voltage V F for discharge of any excess carrier.
  • the maximum value of the bias between the gate and source of the p-channel MOS transistor 7 for driving the first bipolar transistor 5 corresponds to the power source voltage or the high voltage V CC .
  • the source potential and the substrate potential are the same as the high voltage V CC .
  • the p-channel. MOS transistor 7 is free from any disadvantage of increase of the threshold voltage V th . This may prevent any reduction of the drain current of the p-channel MOS transistor 7 caused by the reduction of the high voltage V CC as the power source voltage.
  • MOS transistors has recently been improved in increase of the mutual conductance and a reduction of a diffusion capacitance, while the bipolar transistor has also been improved in a reduction of the base parasitic capacitance.
  • Such improvements for the MOS and bipolar transistors may permit a small gate width of the p-channel and the first n-channel MOS transistors 7 and 8.
  • the third bipolar transistor 10 in the base clamping section 22 in the ON state has a current defined by the first resistor 11 in the base clamping section 22.
  • the value of the current of the third bipolar transistor 10 is set not more than 100 micro-A where a base current of the third bipolar transistor 10 is several micron-A.
  • the second resistor 12 having a resistance not more than several K ohm provides an unappreciable amount of the potential drop for example several mV. Then, the base potential of the second bipolar transistor 6 may be considered to be the same as the base potential of the third bipolar transistor 10.
  • the ON-state of the first n-channel MOS transistor 8 may permit the clamping of the base potential of the first bipolar transistor 5 in the OFF state as well as the base potential of the third bipolar transistor 10.
  • the first bipolar transistor 5 in the OFF state and the second bipolar transistor 6 in the ON state have the same small current not more than 10 micro-A as the third bipolar transistor 10. Variations of the value of the voltage V F or the dependency upon temperature may be compensated by use of the same size transistor as the first to third bipolar transistors 5, 6 and 10 to be limited within 100 mV.
  • the variations of the currents of the first bipolar transistor 5 in the ON state and the second bipolar transistor in the OFF state may be considered to depend upon a variation of the resistance of the first resistor 11 and tempeature only to be limited within a 30% variation from 100 micro-A.
  • the clamping circuit of the base clamping section 22 may clamp or restrict the base potential of the second bipolar transistor 6 slightly below the voltage V F . Therefore, no or almost no charge of the parasitic capacitance of the base region of the second bipolar transistor 6 is required. This results in an immediate or high speed switching ON operation of the second bipolar transistor 6 thereby permitting a rapid or high speed output voltage drop of the output terminal 2. Then, this may permit a high speed performance of the logic gate circuit as the invertor circuit as well as a high density integration and a considerable reduction of the power dissipation.
  • the above described clamping circuit has a further function to control a current flowing through itself.
  • the ON current thereof is divided into the second and third bipolar transistors 6 and 10.
  • a transient response time fT is delayed by the capacitance 14 connected between the base of the third bipolar transistor 10 and the ground line 4 to which the emitter of the third bipolar transistor 10 is connected. This may prevent that the currents of the first and second n-channel MOS transistors 8 and 9 flow into the clamping circuit of the base clamping section 22 and then may permit that the currents to flow into the base of the second bipolar transistor 6.
  • the second and third resistors 12 and 13 may successively control the current of the third bipolar transistor 10. Namely, the capacitor 14 and the second and third resistors 12 and 13 may ensure that the clamping circuit has a larger impedance than an impedance of the second bipolar transistor 6 so that the currents of the first and second n-channel MOS transistors 8 and 9 flow in a high efficiency into the base of the second bipolar transistor 6. Resistances of the first to third resistors 11, 12 and 13 are variable in the range of from 0 to several ten K-ohm to match the conditions such as a value of the load.
  • the base clamping section of the novel BiCMOS logic gate circuits comprises various clamping circuits as illustrated in FIGS. 4A to 4E.
  • the p-channel MOS transistor 7 has a gatc length of 0.5 micrometers and a gate width of 3 micrometers, while the first and second n-channel MOS transistors 8 and 9 have the same gate length of 0.4 micrometers and a gate width of 1 micrometers.
  • each of the p-channel and n-channel MOS transistors has the same gate length and width as the corresponding one of the conventional circuits.
  • the measurements were carried out under the same input fan-in capacitance of 13.7 pF for comparison.
  • the load capacitance is 1 pF. It could be appreciated that the novel circuit have an almost time of the conventional circuit for voltage drop of the output: voltage under the wide range of the power source voltage.
  • the minimum value of the available power source voltage of the novel circuit is lower by 1V or more than that of the conventional circuit.
  • the BiCMOS logic gate circuit, of FIG. 6 has the same circuit configuration except for the base clamping circuit.
  • the base clamping section comprises a single resistance and a diode both of which are connected in series between the second n-channel MOS transistor and the ground line.
  • the operation and effect of the circuit of FIG. 6 are essentially the same as those of the circuit according to FIG. 3.
  • the clamping circuit of this circuit having the simplicity in the circuit configuration may permit a higher density integration.
  • the present invention is applicable to any logic circuits, for example, two-input NAND gate as illustrated in FIG. 7, NOR gate and flip-flop as illustrated in FIG. 8. Furthermore, in place of the npn bipolar transistors, pnp bipolar transistors may be available.

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Claims (4)

  1. BiCMOS-Logikgatter-Schaltung, umfassend:
    einen Eingangsanschluß (1) zum Empfangen von Eingangslogiksignalen;
    einen Ausgangsanschluß (2), der mit einer externen Last verbunden ist, zum Zulassen der Ausgabe von Ausgangslogiksignalen;
    eine CMOS-Schaltung (21), die eine zum Empfangen der Eingangssignale mit dem Eingangsanschluß verbundene Eingangsseite und einen Ausgang aufweist;
    einen Ausgangs-Pull-Up-Bipolartransistor (5), der in Serie zwischen einer Hochspannungsleitung (3) und dem Ausgangsanschluß (2) verschaltet ist, wobei der Ausgangs-Pull-Up-Bipolartransistor (5) eine Basis aufweist, die mit dem Ausgang der CMOS-Schaltung (21) verbunden ist;
    einen Ausgangs-Pull-Down-Bipolartransistor (6), der in Serie zwischen einer Niederspannungsleitung (4) und dem Ausgangsanschluß (2) verschaltet ist, um eine Serienschaltung des Ausgangs-Pull-Up-Bipolartransistors (5) und des Ausgangs-Pull-Down-Bipolartransistors (6) zwischen der Hochspannungsleitung (3) und der Niederspannungsleitung (4) auszubilden, wobei der Ausgangs-Pull-Down-Bipolartransistor (6) eine mit der CMOS-Schaltung (21) verbundene Basis aufweist, so daß die CMOS-Schaltung (21) zwischen der Hochspannungsleitung (3) und der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verschaltet ist;
    wobei die CMOS-Schaltung einen N-Kanal-MOS-Feldeffekttransistor (9) umfaßt mit einem Gate, welches zum Empfangen der Eingangslogiksignale mit dem Eingangsanschluß (1) verbunden ist, und der N-Kanal-MOS-Feldeffekttransistor (9) zum Klemmen eines niedrigen Pegels der an dem Ausgangsanschluß (2) erscheinenden Ausgangslogiksignale auf das durch eine Klemmschaltung (22) geklemmte Basispotential in Serie zwischen dem Ausgangsanschluß (2) und der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verschaltet ist, um dadurch zu verhindern, daß der Ausgangs-Pull-Down-Bipolartransistor (6) in einen Sättigungszustand eintritt,
    dadurch gekennzeichnet, daß
    die Klemmschaltung (22) zwischen der Hochspannungsleitung (3) und der Niederspannungsleitung (4) verschaltet ist, wobei die Klemmschaltung (22) einen Klemmanschluß aufweist, der mit der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verbunden ist, zum Klemmen eines Basispotentials des Ausgangs-Pull-Down-Bipolartransistors (6), welches niedriger ist als ein Schwellenpotentialpegel, an dem der Ausgangs-Pull-Down-Bipolartransistor EIN und AUS schaltet, und welches höher ist als die Spannung auf der Niederspannungsleitung (4), und wobei die Klemmschaltung ferner eine höhere Impedanz hat als eine Eingangsimpedanz der Basis des Ausgangs-Pull-Down-Bipolartransistors; und
    die Klemmschaltung (22) einen ersten Widerstand (11), welcher zwischen der Hochspannungsleitung (3) und dem Klemmanschluß verschaltet ist, einen zweiten Widerstand (13), welcher zwischen einem Kollektor eines Klemmtransistors (10) und dem Klemmanschluß verschaltet ist, und einen dritten Widerstand (12), welcher zwischen dem Klemmanschluß und der Basis des Klemmtransistors (10) verschaltet ist, umfaßt, wobei der Klemmtransistor (10) einen mit der Niederspannungsleitung (4) verbundenen Emitter aufweist.
  2. BiCMOS-Logikgatter-Schaltung, umfassend:
    einen Eingangsanschluß (1) zum Empfangen von Eingangslogiksignalen;
    einen Ausgangsanschluß (2), der mit einer externen Last verbunden ist, zum Zulassen der Ausgabe von Ausgangslogiksignalen;
    eine CMOS-Schaltung (21), die eine zum Empfangen der Eingangssignale mit dem Eingangsanschluß (1) verbundene Eingangsseite und einen Ausgang aufweist;
    einen Ausgangs-Pull-Up-Bipolartransistor (5), der in Serie zwischen einer Hochspannungsleitung (3) und dem Ausgangsanschluß (2) verschaltet ist, wobei der Ausgangs-Pull-Up-Bipolartransistor (5) eine Basis aufweist, die mit dem Ausgang der CMOS-Schaltung (21) verbunden ist;
    einen Ausgangs-Pull-Down-Bipolartransistor (6), der in Serie zwischen einer Niederspannungsleitung (4) und dem Ausgangsanschluß (2) verschaltet ist, um eine Serienschaltung des Ausgangs-Pull-Up-Bipolartransistors (5) und des Ausgangs-Pull-Down-Bipolartransistors (6) zwischen der Hochspannungsleitung (3) und der Niederspannungsleitung (4) auszubilden, wobei der Ausgangs-Pull-Down-Bipolartransistor (6) eine mit der CMOS-Schaltung (21) verbundene Basis aufweist, so daß die CMOS-Schaltung zwischen der Hochspannungsleitung (3) und der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verschaltet ist;
    wobei die CMOS-Schaltung einen N-Kanal-MOS-Feldeffekttransistor (9) umfaßt mit einem Gate, welches zum Empfangen der Eingangslogiksignale mit dem Eingangsanschluß (1) verbunden ist, und der N-Kanal-MOS-Feldeffekttransistor (9) zum Klemmen eines niedrigen Pegels der an dem Ausgangsanschluß (2) erscheinenden Ausgangslogiksignale auf das durch eine Klemmschaltung (22) geklemmte Basispotential in Serie zwischen dem Ausgangsanschluß (2) und der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verschaltet ist, um dadurch zu verhindern, daß der Ausgangs-Pull-Down-Bipolartransistor (6) in einen Sättigungszustand eintritt,
    dadurch gekennzeichnet, daß
    die Klemmschaltung (22) zwischen der Hochspannungsleitung (3) und der Niederspannungsleitung (4) verschaltet ist, wobei die Klemmschaltung (22) einen Klemmanschluß aufweist, der mit der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verbunden ist, zum Klemmen eines Basispotentials des Ausgangs-Pull-Down-Bipolartransistors (6), welches niedriger ist als ein Schwellenpotentialpegel, an dem der Ausgangs-Pull-Down-Bipolartransistor (6) EIN und AUS schaltet, und welches höher ist als die Spannung auf der Niederspannungsleitung (4), und wobei die Klemmschaltung ferner eine höhere Impedanz hat als eine Eingangsimpedanz der Basis des Ausgangs-Pull-Down-Bipolartransistors (6); und
    die Klemmschaltung (22) einen ersten Widerstand (11), welcher zwischen der Hochspannungsleitung (3) und dem Klemmanschluß verschaltet ist, und einen zweiten Widerstand (12), welcher zwischen einem Kollektor eines Klemmtransistors (10) und dem Klemmanschluß verschaltet ist, aufweist, wobei der Klemmanschluß darüber hinaus direkt mit der Basis des Klemmtransistors (10) verbunden ist und der Klemmtransistor (10) einen mit der Niederspannungsleitung (4) verbundenen Emitter aufweist.
  3. BiCMOS-Logikgatter-Schaltung nach einem der vorangehenden Ansprüche, dadurch gekennzeichnet, daß ein Kondensator (14) zwischen der Basis des Klemmtransistors (10) und der Niederspannungsleitung (4) verschaltet ist.
  4. BiCMOS-Logikgatter-Schaltung, umfassend:
    einen Eingangsanschluß (1) zum Empfangen von Eingangslogiksignalen;
    einen Ausgangsanschluß (2), der mit einer externen Last verbunden ist, zum Zulassen der Ausgabe von Ausgangslogiksignalen;
    eine CMOS-Schaltung (21), die eine zum Empfangen der Eingangssignale mit dem Eingangsanschluß verbundene Eingangsseite und einen Ausgang aufweist;
    einen Ausgangs-Pull-Up-Bipolartransistor (5), der in Serie zwischen einer Hochspannungsleitung (3) und dem Ausgangsanschluß (2) verschaltet ist, wobei der Ausgangs-Pull-Up-Bipolartransistor (5) eine Basis aufweist, die mit dem Ausgang der CMOS-Schaltung (21) verbunden ist;
    einen Ausgangs-Pull-Down-Bipolartransistor (6), der in Serie zwischen einer Niederspannungsleitung (4) und dem Ausgangsanschluß (2) verschaltet ist, um eine Serienschaltung des Ausgangs-Pull-Up-Bipolartransistors (5) und des Ausgangs-Pull-Down-Bipolartransistors (6) zwischen der Hochspannungsleitung (3) und der Niederspannungsleitung (4) auszubilden, wobei der Ausgangs-Pull-Down-Bipolartransistor (6) eine mit der CMOS-Schaltung (21) verbundene Basis aufweist, so daß die CMOS-Schaltung zwischen der Hochspannungsleitung (3) und der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verschaltet ist;
    wobei die CMOS-Schaltung einen N-Kanal-MOS-Feldeffekttransistor (9) umfaßt mit einem Gate, welches zum Empfangen der Eingangslogiksignale mit dem Eingangsanschluß (1) verbunden ist, und der N-Kanal-MOS-Feldeffekttransistor (9) zum Klemmen eines niedrigen Pegels der an dem Ausgangsanschluß erscheinenden Ausgangslogiksignale auf das durch eine Klemmschaltung (22) geklemmte Basispotential in Serie zwischen dem Ausgangsanschluß (2) und der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verschaltet ist, um dadurch zu verhindern, daß der Ausgangs-Pull-Down-Bipolartransistor (6) in einen Sättigungszustand eintritt,
    dadurch gekennzeichnet, daß
    die Klemmschaltung (22) zwischen der Hochspannungsleitung (3) und der Niederspannungsleitung (4) verschaltet ist, wobei die Klemmschaltung (22) einen Klemmanschluß aufweist, der mit der Basis des Ausgangs-Pull-Down-Bipolartransistors (6) verbunden ist, zum Klemmen eines Basispotentials des Ausgangs-Pull-Down-Bipolartransistors (6), welches niedriger ist als ein Schwellenpotentialpegel, an dem der Ausgangs-Pull-Down-Bipolartransistor EIN und AUS schaltet, und welches höher ist als die Spannung auf der Niederspannungsleitung (4), und wobei die Klemmschaltung ferner eine höhere Impedanz hat als eine Eingangsimpedanz der Basis des Ausgangs-Pull-Down-Bipolartransistors (6); und
    die Klemmschaltung (22) einen ersten Widerstand (11) umfaßt, der zwischen der Hochspannungsleitung (3) und dem Klemmanschluß angeordnet ist, wobei der Klemmanschluß direkt mit einem Kollektor eines Klemmtransistors (10) verbunden ist, der Klemmtransistor (10) eine Basis, die mit der Niederspannungsleitung (4) über einen Kondensator (14) verbunden ist, und einen zweiten Widerstand (12), welcher zwischen dem Klemmanschluß und der Basis des Klemmtransistors (10) verschaltet ist, aufweist, und der Klemmtransistor (10) einen mit der Niederspannungsleitung (4) verbundenen Emitter aufweist.
EP94115119A 1993-09-24 1994-09-26 BICMOS-Logikschaltung Expired - Lifetime EP0645890B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23762093 1993-09-24
JP5237620A JP2699823B2 (ja) 1993-09-24 1993-09-24 半導体集積回路
JP237620/93 1993-09-24

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EP0645890A3 EP0645890A3 (de) 1996-01-17
EP0645890B1 true EP0645890B1 (de) 2001-12-12

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JP2647014B2 (ja) * 1994-09-08 1997-08-27 日本電気株式会社 ＢｉＣＭＯＳ論理回路
JP3014025B2 (ja) * 1995-03-30 2000-02-28 日本電気株式会社 ＢｉＣＭＯＳ論理集積回路
JP2904128B2 (ja) * 1996-06-28 1999-06-14 日本電気株式会社 出力回路
US20050169121A1 (en) * 1997-07-09 2005-08-04 Keller Peter J. Optical storage device
JP2013096750A (ja) 2011-10-28 2013-05-20 Hamamatsu Photonics Kk Ｘ線分光検出装置
WO2024014150A1 (ja) * 2022-07-11 2024-01-18 株式会社村田製作所 クランプ回路及び増幅器

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EP0645890A2 (de) 1995-03-29
US5670893A (en) 1997-09-23
EP0645890A3 (de) 1996-01-17
DE69429409T2 (de) 2002-08-01
DE69429409D1 (de) 2002-01-24
KR0165986B1 (ko) 1998-12-15
KR950010062A (ko) 1995-04-26
JP2699823B2 (ja) 1998-01-19
JPH0795045A (ja) 1995-04-07

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