EP0359748A1 - Messvorichtung zur bestimmung der temperatur von halbleiterkörpern und verfahren zur herstellung der messvorrichtung - Google Patents
Messvorichtung zur bestimmung der temperatur von halbleiterkörpern und verfahren zur herstellung der messvorrichtungInfo
- Publication number
- EP0359748A1 EP0359748A1 EP88903190A EP88903190A EP0359748A1 EP 0359748 A1 EP0359748 A1 EP 0359748A1 EP 88903190 A EP88903190 A EP 88903190A EP 88903190 A EP88903190 A EP 88903190A EP 0359748 A1 EP0359748 A1 EP 0359748A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor body
- thermocouple
- semiconductor
- measuring device
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000009529 body temperature measurement Methods 0.000 title claims description 4
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims description 10
- 238000005496 tempering Methods 0.000 claims description 7
- 239000011253 protective coating Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 2
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- QRRWWGNBSQSBAM-UHFFFAOYSA-N alumane;chromium Chemical compound [AlH3].[Cr] QRRWWGNBSQSBAM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
Definitions
- Measuring device for determining the temperature of Halbleiter ⁇ bodies processes for producing the measuring device and method for determining the temperature of semiconductor bodies currency ⁇ rend tempering
- annealing processes In the manufacture of semiconductor products, e.g. Semiconductor wafers for electronic components, annealing processes often have to be carried out. It is important to control the temperature of a semiconductor body precisely during the tempering process and to regulate the temperature profile exactly.
- the object of the invention is to provide methods and measuring devices with which the temperature of a semiconductor body can be determined precisely and reproducibly during a tempering process and to specify methods for producing such measuring devices.
- thermocouple 5 is integrated in this semiconductor body 1.
- the thermocouple ball 7 of this thermocouple 5 is located in a recess 6 in the semiconductor body 1 and is to be enclosed on all sides with semiconductor material.
- thermocouple wires 8 of the thermocouple 5 are led out on the side of the recess 6 of the semiconductor body 1.
- the recess 6 of the semiconductor body 1 can be created, for example, by mechanical processing after the manufacture of the semiconductor body 1.
- the thermocouple ball 7 of the thermocouple 5 is introduced into the recess 6.
- the thermocouple wires 8 are led out on the side of the recess 6 of the semiconductor body 1.
- the semiconductor body 1 in this example consists of gallium arsenide, a III-V semiconductor. After the thermocouple 5 has been introduced into the recess 6, it is filled with liquid gallium 22 and the device is brought into a reaction tube 21. An arsenic-containing atmosphere is produced in the reaction tube 21, for example with As ⁇ or AsH.
- a temperature of approximately 750 ° C. is set in the reaction tube 21.
- the gallium that was introduced into the recess reacts with arsenic to form polycrystalline gallium arsenide, which grows into the semiconductor body 1 and thereby encloses the thermocouple ball 7 from all sides.
- Another method for filling the recess 6 can be used if the semiconductor body 1 in the vicinity of the recess 6 consists of a single semiconductor element, for example silicon or germanium.
- the recess 6 of the semiconductor body 1 can then be filled after the thermocouple 5 has been introduced by separating the semiconductor element from the gas phase.
- the measuring device can also be manufactured such that the thermocouple wires 8 are led out on a side of the semiconductor body other than the side into which the thermocouple ball 7 is inserted.
- the measuring device 32 contains a first semiconductor body 1, which is designed as a reference to the second semiconductor body 31, so that during the Annealing process the temperature profile measured in the first semiconductor body 1 agrees with the temperature profile in the second semiconductor body 31.
- the measuring device 32 is arranged closely adjacent to the second semiconductor body 31 so that temperature fluctuations in the surroundings of the second semiconductor body 31 and the measuring device 32 do not lead to measurement errors.
- the thermocouple wires 8 of the thermocouple 5 are led out through bores 34 in the first semiconductor body 1 to the side facing away from the second semiconductor body 31. It is thus achieved that the semiconductor bodies are arranged closer to one another.
- the measuring device 32 can be used to determine the temperature that prevails in the interior of the second semiconductor body 31.
- the temperature measurement in the interior of the first semiconductor body 1 is particularly advantageous if the semiconductor bodies make rapid temperature changes. are set and therefore the course of the surface temperature differs from the course of the temperature inside the semiconductor body.
- the measuring device 32 can be constructed in such a way that the thermocouple group 7 is located in a very specific layer of the first semiconductor body 1, so that it can be used to determine how the temperature profile in the comparable layer of the second semiconductor body 31 is.
- the temperature determined with the measuring device 32 can be used to regulate the temperature of the tempering process. The temperature control can thus be matched exactly to the temperature conditions in the second semiconductor body 31.
- FIG. 4 schematically shows a measuring device for determining the surface temperature of a semiconductor body 1.
- Two overlapping metal strips 42 and 43 are attached to the semiconductor body 1 by vapor deposition.
- the metal strips 42 and 43 consist of a combination of thermocouple metals, e.g. Platinum / rhodium-platinum or nickel / chromium-nickel and have electrical connections 44.
- the measuring device shown can be used for temperature determination when tempering a second semiconductor body 31.
- the first semiconductor body 1 is selected such that it is designed as a reference to the second semiconductor body 31, the temperature of which is to be determined, and undergoes the same annealing process together with this second semiconductor body 31.
- the measuring device schematically shows a measuring device for determining the surface temperature of a semiconductor body 1.
- the measuring device contains a thermocouple 5 and a bearing weight 52, which weighs down the thermocouple ball 7 of the thermocouple 5.
- the bearing weight 52 rests on the thermocouple ball 7, while the thermocouple wires 8 of the thermocouple 5 through holes 53 are passed through in the bearing weight 52.
- the thermocouple ball 7 with the bearing weight 52 lies freely on the semiconductor body 1 during the measurement.
- the measuring device can be used to determine the temperature of a second half-body 31 during an annealing process.
- the temperature of the first semiconductor body 1 is determined as a reference semiconductor body with the aid of the measuring device, which body undergoes the same annealing process together with the second semiconductor body 31 and the measuring device.
- FIG. 6 schematically shows a measuring device of the type as shown in FIG. 5, with the special feature that the support weight 52 is rotatably supported via an axis of rotation 61 with a fastening 62.
- the support weight 52 lies on one side on the thermocouple ball 7 of the Thermocouples 5.
- the thermocouple wires 8 of the thermocouple 5 are passed through holes in the support weight 52.
- the rotatable mounting of the measuring device facilitates positioning on the semiconductor body 1, the surface temperature of which is to be determined with the aid of the measuring device.
- the measuring device can be used to determine the temperature of a second semiconductor body 31 during an annealing process.
- thermocouple materials can react chemically with components of semiconductors, for example aluminum of a chromium-aluminum thermocouple with arsenic of an arsenic-containing semiconductor.
- thermocouple which is provided with a thin protective coating if there is a risk that components of the thermocouple react chemically with components of the semiconductor body.
- the protective coating can consist of Si0 2 or Si_N, for example.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3715231 | 1987-05-07 | ||
| DE19873715231 DE3715231A1 (de) | 1987-05-07 | 1987-05-07 | Messvorrichtung zur bestimmung der temperatur von halbleiterkoerpern, verfahren zur herstellung der messvorrichtung und verfahren zur bestimmung der temperatur von halbleiterkoerpern waehrend temperprozessen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP0359748A1 true EP0359748A1 (de) | 1990-03-28 |
Family
ID=6327026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP88903190A Ceased EP0359748A1 (de) | 1987-05-07 | 1988-04-27 | Messvorichtung zur bestimmung der temperatur von halbleiterkörpern und verfahren zur herstellung der messvorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5052821A (ja) |
| EP (1) | EP0359748A1 (ja) |
| JP (1) | JPH02503352A (ja) |
| DE (1) | DE3715231A1 (ja) |
| WO (1) | WO1988008965A2 (ja) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02284440A (ja) * | 1989-04-26 | 1990-11-21 | Mitsubishi Electric Corp | 太陽電池溶接温度測定方法及び太陽電池特性確認方法 |
| EP0406751A1 (de) * | 1989-07-07 | 1991-01-09 | Balzers Aktiengesellschaft | Verfahren und Anordnung zur Ermittlung von Messdaten während der Behandlung von Scheiben |
| CA2073886A1 (en) * | 1991-07-19 | 1993-01-20 | Tatsuya Hashinaga | Burn-in apparatus and method |
| JP3389624B2 (ja) * | 1993-01-11 | 2003-03-24 | 東レ株式会社 | 糸継ぎ装置 |
| US5967661A (en) * | 1997-06-02 | 1999-10-19 | Sensarray Corporation | Temperature calibration substrate |
| DE19852080C1 (de) * | 1998-11-11 | 2000-08-17 | Trw Automotive Electron & Comp | Verfahren und Vorrichtung zur Überwachung der Temperatur eines verlustbehafteten elektronischen Bauelements, insbesondere eines Leistungshalbleiters |
| US6475815B1 (en) * | 1998-12-09 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Method of measuring temperature, method of taking samples for temperature measurement and method for fabricating semiconductor device |
| US6504392B2 (en) | 1999-03-26 | 2003-01-07 | International Business Machines Corporation | Actively controlled heat sink for convective burn-in oven |
| US6190040B1 (en) * | 1999-05-10 | 2001-02-20 | Sensarray Corporation | Apparatus for sensing temperature on a substrate in an integrated circuit fabrication tool |
| US6962437B1 (en) * | 1999-12-16 | 2005-11-08 | Lsi Logic Corporation | Method and apparatus for thermal profiling of flip-chip packages |
| WO2001090710A1 (en) * | 2000-05-25 | 2001-11-29 | Kamel Fauzi Razali | Thermocouple passing through encapsulant of integrated circuit |
| US20030231698A1 (en) * | 2002-03-29 | 2003-12-18 | Takatomo Yamaguchi | Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus |
| JP5451793B2 (ja) * | 2012-02-10 | 2014-03-26 | 東京エレクトロン株式会社 | 温度センサ及び熱処理装置 |
| JP6012413B2 (ja) * | 2012-11-07 | 2016-10-25 | 安立計器株式会社 | 接触式温度計 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3462317A (en) * | 1965-10-12 | 1969-08-19 | Motorola Inc | Thermocouple assembly |
| FR2123179B1 (ja) * | 1971-01-28 | 1974-02-15 | Commissariat Energie Atomique | |
| US4321827A (en) * | 1980-03-31 | 1982-03-30 | Rosemount Inc. | Self aligning surface temperature sensor |
| DE3212026A1 (de) * | 1982-03-31 | 1983-10-06 | Siemens Ag | Temperatursensor |
| JPS5997024A (ja) * | 1982-11-25 | 1984-06-04 | Shozo Asano | 浸漬熱電対 |
| US4571608A (en) * | 1983-01-03 | 1986-02-18 | Honeywell Inc. | Integrated voltage-isolation power supply |
| JPS59155731A (ja) * | 1983-02-25 | 1984-09-04 | Mitsubishi Heavy Ind Ltd | 測温体の装着方法 |
| JPS6010137A (ja) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | サ−モパイル |
| JPS60230026A (ja) * | 1984-04-27 | 1985-11-15 | Mitsubishi Electric Corp | 半導体検査装置の温度測定装置 |
| US4590507A (en) * | 1984-07-31 | 1986-05-20 | At&T Bell Laboratories | Variable gap devices |
| JPS61189657A (ja) * | 1985-02-18 | 1986-08-23 | Fuji Photo Film Co Ltd | 半導体素子温度制御装置 |
| US4808009A (en) * | 1986-06-05 | 1989-02-28 | Rosemount, Inc. | Integrated semiconductor resistance temperature sensor and resistive heater |
| US4820659A (en) * | 1986-07-16 | 1989-04-11 | General Electric Company | Method of making a semiconductor device assembly |
| JPH01295500A (ja) * | 1988-05-24 | 1989-11-29 | Taiyo Yuden Co Ltd | チップ状電子部品マウント方法及びその装置 |
-
1987
- 1987-05-07 DE DE19873715231 patent/DE3715231A1/de not_active Withdrawn
-
1988
- 1988-04-27 WO PCT/DE1988/000249 patent/WO1988008965A2/de not_active Application Discontinuation
- 1988-04-27 JP JP63503470A patent/JPH02503352A/ja active Pending
- 1988-04-27 EP EP88903190A patent/EP0359748A1/de not_active Ceased
- 1988-04-27 US US07/445,688 patent/US5052821A/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| See references of WO8808965A2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1988008965A2 (fr) | 1988-11-17 |
| DE3715231A1 (de) | 1988-11-17 |
| WO1988008965A3 (fr) | 1988-12-29 |
| JPH02503352A (ja) | 1990-10-11 |
| US5052821A (en) | 1991-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB |
|
| 17P | Request for examination filed |
Effective date: 19891026 |
|
| 17Q | First examination report despatched |
Effective date: 19910416 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
| 18R | Application refused |
Effective date: 19911129 |