Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
  • G01K13/00—Thermometers specially adapted for specific purposes
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T29/00—Metal working
  • Y10T29/53—Means to assemble or disassemble
  • Y10T29/5313—Means to assemble electrical device
  • Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate

Definitions

• Measuring device for determining the temperature of Halbleiter ⁇ bodies processes for producing the measuring device and method for determining the temperature of semiconductor bodies currency ⁇ rend tempering
• annealing processes In the manufacture of semiconductor products, e.g. Semiconductor wafers for electronic components, annealing processes often have to be carried out. It is important to control the temperature of a semiconductor body precisely during the tempering process and to regulate the temperature profile exactly.
• the object of the invention is to provide methods and measuring devices with which the temperature of a semiconductor body can be determined precisely and reproducibly during a tempering process and to specify methods for producing such measuring devices.
• thermocouple 5 is integrated in this semiconductor body 1.
• the thermocouple ball 7 of this thermocouple 5 is located in a recess 6 in the semiconductor body 1 and is to be enclosed on all sides with semiconductor material.
• thermocouple wires 8 of the thermocouple 5 are led out on the side of the recess 6 of the semiconductor body 1.
• the recess 6 of the semiconductor body 1 can be created, for example, by mechanical processing after the manufacture of the semiconductor body 1.
• the thermocouple ball 7 of the thermocouple 5 is introduced into the recess 6.
• the thermocouple wires 8 are led out on the side of the recess 6 of the semiconductor body 1.
• the semiconductor body 1 in this example consists of gallium arsenide, a III-V semiconductor. After the thermocouple 5 has been introduced into the recess 6, it is filled with liquid gallium 22 and the device is brought into a reaction tube 21. An arsenic-containing atmosphere is produced in the reaction tube 21, for example with As ⁇ or AsH.
• a temperature of approximately 750 ° C. is set in the reaction tube 21.
• the gallium that was introduced into the recess reacts with arsenic to form polycrystalline gallium arsenide, which grows into the semiconductor body 1 and thereby encloses the thermocouple ball 7 from all sides.
• Another method for filling the recess 6 can be used if the semiconductor body 1 in the vicinity of the recess 6 consists of a single semiconductor element, for example silicon or germanium.
• the recess 6 of the semiconductor body 1 can then be filled after the thermocouple 5 has been introduced by separating the semiconductor element from the gas phase.
• the measuring device can also be manufactured such that the thermocouple wires 8 are led out on a side of the semiconductor body other than the side into which the thermocouple ball 7 is inserted.
• the measuring device 32 contains a first semiconductor body 1, which is designed as a reference to the second semiconductor body 31, so that during the Annealing process the temperature profile measured in the first semiconductor body 1 agrees with the temperature profile in the second semiconductor body 31.
• the measuring device 32 is arranged closely adjacent to the second semiconductor body 31 so that temperature fluctuations in the surroundings of the second semiconductor body 31 and the measuring device 32 do not lead to measurement errors.
• the thermocouple wires 8 of the thermocouple 5 are led out through bores 34 in the first semiconductor body 1 to the side facing away from the second semiconductor body 31. It is thus achieved that the semiconductor bodies are arranged closer to one another.
• the measuring device 32 can be used to determine the temperature that prevails in the interior of the second semiconductor body 31.
• the temperature measurement in the interior of the first semiconductor body 1 is particularly advantageous if the semiconductor bodies make rapid temperature changes. are set and therefore the course of the surface temperature differs from the course of the temperature inside the semiconductor body.
• the measuring device 32 can be constructed in such a way that the thermocouple group 7 is located in a very specific layer of the first semiconductor body 1, so that it can be used to determine how the temperature profile in the comparable layer of the second semiconductor body 31 is.
• the temperature determined with the measuring device 32 can be used to regulate the temperature of the tempering process. The temperature control can thus be matched exactly to the temperature conditions in the second semiconductor body 31.
• FIG. 4 schematically shows a measuring device for determining the surface temperature of a semiconductor body 1.
• Two overlapping metal strips 42 and 43 are attached to the semiconductor body 1 by vapor deposition.
• the metal strips 42 and 43 consist of a combination of thermocouple metals, e.g. Platinum / rhodium-platinum or nickel / chromium-nickel and have electrical connections 44.
• the measuring device shown can be used for temperature determination when tempering a second semiconductor body 31.
• the first semiconductor body 1 is selected such that it is designed as a reference to the second semiconductor body 31, the temperature of which is to be determined, and undergoes the same annealing process together with this second semiconductor body 31.
• the measuring device schematically shows a measuring device for determining the surface temperature of a semiconductor body 1.
• the measuring device contains a thermocouple 5 and a bearing weight 52, which weighs down the thermocouple ball 7 of the thermocouple 5.
• the bearing weight 52 rests on the thermocouple ball 7, while the thermocouple wires 8 of the thermocouple 5 through holes 53 are passed through in the bearing weight 52.
• the thermocouple ball 7 with the bearing weight 52 lies freely on the semiconductor body 1 during the measurement.
• the measuring device can be used to determine the temperature of a second half-body 31 during an annealing process.
• the temperature of the first semiconductor body 1 is determined as a reference semiconductor body with the aid of the measuring device, which body undergoes the same annealing process together with the second semiconductor body 31 and the measuring device.
• FIG. 6 schematically shows a measuring device of the type as shown in FIG. 5, with the special feature that the support weight 52 is rotatably supported via an axis of rotation 61 with a fastening 62.
• the support weight 52 lies on one side on the thermocouple ball 7 of the Thermocouples 5.
• the thermocouple wires 8 of the thermocouple 5 are passed through holes in the support weight 52.
• the rotatable mounting of the measuring device facilitates positioning on the semiconductor body 1, the surface temperature of which is to be determined with the aid of the measuring device.
• the measuring device can be used to determine the temperature of a second semiconductor body 31 during an annealing process.
• thermocouple materials can react chemically with components of semiconductors, for example aluminum of a chromium-aluminum thermocouple with arsenic of an arsenic-containing semiconductor.
• thermocouple which is provided with a thin protective coating if there is a risk that components of the thermocouple react chemically with components of the semiconductor body.
• the protective coating can consist of Si0 2 or Si_N, for example.

Landscapes

• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)
• Measuring Temperature Or Quantity Of Heat (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=6327026

Family Applications (1)

Country Status (5)

Families Citing this family (14)

Family Cites Families (14)

• 1987
  • 1987-05-07 DE DE19873715231 patent/DE3715231A1/de not_active Withdrawn
• 1988
  • 1988-04-27 US US07/445,688 patent/US5052821A/en not_active Expired - Fee Related
  • 1988-04-27 EP EP88903190A patent/EP0359748A1/de not_active Ceased
  • 1988-04-27 JP JP63503470A patent/JPH02503352A/ja active Pending
  • 1988-04-27 WO PCT/DE1988/000249 patent/WO1988008965A2/de not_active Application Discontinuation

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events