EP0279895A2 - Dispositif de production d'un plasma et de traitement de substrats dans ledit plasma - Google Patents

Dispositif de production d'un plasma et de traitement de substrats dans ledit plasma Download PDF

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Publication number
EP0279895A2
EP0279895A2 EP87111855A EP87111855A EP0279895A2 EP 0279895 A2 EP0279895 A2 EP 0279895A2 EP 87111855 A EP87111855 A EP 87111855A EP 87111855 A EP87111855 A EP 87111855A EP 0279895 A2 EP0279895 A2 EP 0279895A2
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EP
European Patent Office
Prior art keywords
substrate
plasma
chamber
microwave
magnet system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP87111855A
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German (de)
English (en)
Other versions
EP0279895B1 (fr
EP0279895A3 (en
Inventor
Jörg Dr. Kieser
Michael Dr. Geisler
Rolf Prof. Dr. Wilhelm
Eberhard Dr. Räuchle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Leybold Heraeus GmbH
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Filing date
Publication date
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Application filed by Leybold AG, Leybold Heraeus GmbH filed Critical Leybold AG
Priority to AT87111855T priority Critical patent/ATE89099T1/de
Publication of EP0279895A2 publication Critical patent/EP0279895A2/fr
Publication of EP0279895A3 publication Critical patent/EP0279895A3/de
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Publication of EP0279895B1 publication Critical patent/EP0279895B1/fr
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32275—Microwave reflectors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Definitions

  • the invention relates to a device for producing a plasma and for treating substrates therein, with a microwave generator, a chamber for receiving a gas, a magnet system for generating local electron cyclotron resonances and with a substrate to be coated in the chamber.
  • window glasses which are provided with a thin metal or metal oxide layer in order to block out certain wavelength ranges from sunlight.
  • thin layers of one or more substances are often applied to a substrate. It is particularly important here that the thin layers are not only very pure, but also have to be dosed very precisely so that the respective layer thicknesses - and in the case of layers made of chemical compounds, their composition - can be reproduced exactly. These layer thicknesses are usually between two and a few thousand nanometers.
  • Various methods are known for applying thin layers on foils, glasses and other substrates.
  • the thin layer is applied by chemical or electrochemical deposition
  • the layer is applied by evaporation in a vacuum.
  • a third method the so-called sputtering or cathode sputtering method, is often used.
  • sputtering is naturally not suitable for the deposition of a thin layer from the gas phase.
  • the substance or the compound is brought into the plasma state.
  • the radicals formed in the plasma are deposited on the substrate.
  • Various forms of electrical energy can be used to generate such a plasma.
  • the generation of plasma by microwaves is particularly advantageous because, among other things, no electrodes are required which can become dirty and worn away and because the plasma generated by microwaves has a higher density of ions and radicals and can therefore also be kept at a higher pressure than the plasma produced by other processes.
  • the chemical structure of starting monomers is at least partially obtained.
  • the microwave plasma is also favored for the construction of cold cathode ion sources.
  • a delay line ie a microwave conductor of low group speed (“slow wave structure") is used to supply the electrical energy to the plasma, the energy source being outside the recipient and the electric field penetrating through the recipient wall.
  • This delay line consists of an approximately 90 cm long "semi-radiating" arrangement that works in the degenerate ir / 2 mode or close to the degenerate ir / 2 mode. Operation near the band edge, ie either in the degenerate ⁇ / 2 mode or in the w mode. leads to particularly strong electrical fields near the delay line. The reason for this lies in the fact that the electric field strength is inversely proportional to the group speed of the wave, which takes a very small value near the band edge.
  • a device is also known with which a plasma is generated by means of a high-frequency wave, which is input into a wave guide in which there is a glass tube in which the plasma is generated (DE-OS 31 44 016).
  • a coil is provided around the plasma generating tube, which generates a magnetic field along the axis of the glass tube.
  • the electron cyclotron resonance frequency M ex B / m results.
  • the coupling of the high-frequency wave to the plasma electrons is particularly strong.
  • a disadvantage of this known device is that only relatively small plasma zones can be produced.
  • the glass tube is easily covered with layers deposited from the gas phase.
  • a microwave plasma source which has a vacuum chamber which serves as an unloading space (US Pat. No. 4,433,228).
  • the microwave energy is fed into the unloading space via a microwave propagation path.
  • Permanent magnets are provided outside the unloading space and in the microwave propagation path, which serve to guide the plasma generated by the microwave. The magnetic fields of these permanent magnets, however, do not allow cyclotron resonance of the plasma electrons in a defined area of a treatment chamber.
  • Another known microwave plasma source largely corresponds to the plasma source according to DE-OS 31 44 016.
  • a further magnetic coil is additionally provided behind the substrate to be treated (Kimura, Murakami, Miyake. Warabisako, Sunami and Tokuyama: "Low Temperature Oxidation of Silicon in a Microwave-Discharged Oxygen Plasma ", J. Electrochem. Soc., Solid-State Science and Technology, Vol. 132, No. 6, 1985, pp. 1460-1466, Fig. 1).
  • a particularly interesting application for these known plasma sources could e.g. B. the coating of headlight reflectors with aluminum and a plasma-polymerized protective layer. So far, however, this coating has been carried out in so-called batch coaters using a direct current plasma, the surface being optionally hydrophilized by adding oxygen.
  • the invention has for its object to provide a device with which it is possible on the one hand to generate a uniform, large-volume plasma and on the other hand to keep the plasma away from the microwave window.
  • the advantage achieved by the invention is in particular that large-area, uniform plasmas can be generated. Another advantage is that no precipitation forms at the entrance window of the microwaves.
  • These advantages are due to the fact that the magnetic field caused by the magnet systems is strong enough, at least in some areas, to enable a so-called electron cyclotron resonance. This takes advantage of the fact that the electrical field strength required to ignite the plasma is considerably smaller in an area in which the electron cyclotron resonance can take place than in an area free of a magnetic field. By localizing the magnetic field sufficient for the electron cyclotron resonance, a corresponding localization of the plasma generation can thus also be achieved.
  • the device according to the invention is particularly suitable for the coating of linearly continuously moving substrates.
  • this layer When the invention is used to apply a protective layer made of SiO 2 that is transparent in the range of visible light, this layer has a permeability to oxygen that is 40 times smaller than that of a conventional plasma-polymerized layer.
  • a linearly movable carrier 3 is arranged with a substrate that is to be coated.
  • the coating is carried out by means of a gas which is introduced into a chamber 5 via an inlet connection 4 and is ionized there.
  • the chamber 5 has boundary walls made of metal, of which the walls 6, 7, 12, 13 can be seen in FIG.
  • the side walls 6, 7 each have a microwave-proof network 8, 9, which ensures the transparency of the chamber 5 for a gas change.
  • a rotatable metal reflector 10 is also provided, which has the shape of a paddle wheel.
  • a magnet system is arranged behind the substrate carrier 3 to be coated and is located between two metallic boundary walls 12, 13.
  • this magnet system 11 Opposite this magnet system 11 is a microwave window 14, preferably made of quartz glass, through which the microwaves of a horn radiator 15 enter the gas chamber 5.
  • This horn 10 is in turn connected to a microwave conductor 16, which in turn is connected to a microwave transmitter, not shown.
  • the microwave power immediately behind the microwave window 14 is such that it does not lead to spontaneous ignition of the plasma in the window area.
  • a rotatable metal reflector 17 is also arranged, opposite which are screwed-in rods 18 made of metal or of a dielectric for influencing the field distribution.
  • the housing 1 is closed on both sides by pressure chambers 19, 20, which serve as seals for the substrate carrier 3.
  • the microwave power emitted by the horn radiator 15 in the form of a club is introduced into the chamber 5 formed by the metallic walls 6, 7, 12, 13 and is repeatedly reflected on the walls 6, 7, 12, 13 and on the substrate carrier 3.
  • a number of standing waves with different positions of the nodes and bellies builds up in the chamber 5 if the absorption of the waves by the plasma is first ignored.
  • the large number of standing waves is also known as a multi-mode system.
  • the superimposition of many individual vibrations creates a wave field that is considerably more homogeneous than the beam emitted by the horn 15.
  • An additional wave or mode mixture can be achieved by means of the rotatable metal reflectors 10, 17, which work as a kind of wave whisk.
  • the magnet system which is arranged behind the substrate carrier 3 in the example of FIG. 1, is essential for the invention.
  • the electron cyclotron resonance is generated with the help of this magnet system. Due to the Lorenz force, the gas particles ionized by the microwaves are drawn into a path curved around the magnetic field lines of the magnet system 11.
  • the rotational frequency of a charged particle in a homogeneous magnetic field is independent of its radius of curvature at speeds that are not too high. It only depends on the specific charge of the particle and the magnetic flux density.
  • the well-known cylotron resonance frequency applies: where f is the orbital frequency of the particle, e o is the charge of the particle, m is the mass of the particle and B is the magnetic flux density.
  • the magnetic flux density required for the cyclotron resonance when coupled to a microwave of 2.45 GHz is 0.088 Tesla.
  • High-performance permanent magnets for example CoSm or Nd-Fe, have proven particularly suitable for generating such a flux density.
  • FIG. 1 One possibility to avoid this disadvantage is shown in the device according to FIG.
  • a plasma is generated in front of the substrate carrier 3 shown, as a result of which pronounced three-dimensional substrates can also be coated.
  • the magnet arrangement here consists of two systems 24 and 25, which are arranged symmetrically to an imaginary straight line along the axis of the waveguide 16 and the hom emitter 15. This creates two cyclotron resonance regions 26, 27, which serve as ignition zones for the plasma.
  • the two metallic boundary walls 12, 13 according to FIG. 1 are replaced by a single boundary wall 23 in FIG.
  • FIG. 3 shows the device of FIG. 1 as section III-III. It can be seen here that several rods 18 are screwed into the horn 15 at different depths. With these rods 18, the microwave field can be influenced in the sense that it is deliberately bent.
  • the network 9 is now clearly visible next to the microwave swirler 10. Openings 28, 29 are provided in the substrate carrier 3. through which the ignited plasma front 21 engages. The substrate carrier 3 is held via the brackets 30, 31.
  • FIGS. 4a to 4e show various permanent magnet arrangements which are suitable for the magnet system 11.
  • the representations shown in the upper area of the figures are profile representations, while the representations shown below are top views.
  • FIG. 4a shows a U-shaped permanent magnet 32 which has two legs connected to one another via a yoke 33.
  • the area of the cyclotron resonance is designated by 21.
  • the lines 36, 37 indicated by dashed lines represent magnetic field lines on which no cyclotron resonance takes place.
  • the legs 34, 35 are bar magnets, each with a north and a south pole, the arrangement of the north and south poles in the leg 34 being opposite to that of the leg 35.
  • the magnetic field of the arrangement according to FIG. 4 a has a comparative effect on the thickness of the deposited layer of material in the longitudinal direction, which seems to be based on a cooperative drift movement of the electrons, as is known from the Ma Q netron technique.
  • the one known from the SDutter Maanetron is missing Movement because no to -Field vertical constant Field is present.
  • a drift movement in the longitudinal direction of the magnetic field arrangement can be anaennmman that on the strong decrease of -Field above and below the Zvklotron resonance surface - returns.
  • the resulting force is then This resulting force also has the effect that the plasma in front of a substrate carrier, which covers the magnetic field generating device, only burns well if the substrate carrier has slots in the region of the end face of the magnet system, as shown in FIG.
  • FIG. 4b Another permanent magnet arrangement is shown in FIG. 4b.
  • three bar magnets 38, 39, 40 with alternating north and south poles are arranged side by side on a common yoke 41. This results in a linearization of the cyclotron resonance zone because two small resonance arcs 42, 43 now connect to one another.
  • the two outer bar magnets 38, 40 are connected to one another via legs 44, 45. 4b is also referred to as a "race-track" arrangement.
  • 4c shows a simple bar magnet 46, which forms two cyclotron resonance regions 47, 48. It can be seen from the illustration below Lich that the north and south poles are a relatively small distance from each other, compared to the length of the north and. South Pole overall. In general, one will strive for the largest possible surface area of the 0.088 Tesla range. However, this requires a magnetic mass that is about a factor of 3 above that for a conventional magnetron magnetic field.
  • Figure 4d shows a so-called matrix arrangement of magnets, in which a total of nine permanent magnets 48-56 are arranged at the same distance next to one another and with alternating poles.
  • FIG. 4e shows a permanent magnet system that is similar to that of FIG. 4a. Unlike there, however, the permanent magnets 57, 58 connected via the yoke 59 form a cyclotron resonance zone 60, 61 around its own north pole / south pole direction. It is a simple-equipped magnet system, as used for sputter magnetrons, in which the electron-cyclotron resonance takes place around the individual magnets.
  • the magnetic fields act in the same way as the normal magnetic enclosure, the function of the magnetic trap; i.e. the plasma is concentrated in the area of the magnetic field.
  • FIG. 5 shows a device in which a waveguide 16 is divided into two partial conductors 62, 63. Each of these sub-conductors 62, 63 ends in a separate radiator 64, 65. In a corresponding manner, a large number of horn radiators can be implemented, the combined wave field of which is considerably more uniform than that of a single horn radiator.
  • FIG. 6 shows in principle the manner in which windable materials can be coated with the device according to the invention.
  • the feed of the microwave was not shown here. Only the magnet system 11 is shown, as is part of a roller guide for the windable material 67, which is guided over rollers 68, 69.
  • the roller 66 extends over the circumference of an indicated circle 70.
  • FIG. 7 shows the basic arrangement of the microwave transmitter system which is used in the invention.
  • This has a microwave transmitter 71, which is connected to a horn stair 74 via a circulator 72 and a three-rod tuner 73.
  • a device 75 for measuring the reflected power is connected to the circulator. This device is only symbolized by a diode.
  • Another measuring device 76 is connected between the three-rod tuner 73 and the horn 74, with which the forward power is measured. This measuring device 76 is also symbolized only by a diode.
  • the radiation of the microwave power can take place from a simple waveguide without termination, because a certain part of the microwave power emerges from one side. Due to the abrupt transition, however, partial reflection of the microwave power occurs in the waveguide. An almost complete radiation can be achieved by a gradual transition, for example as an even extension of the waveguide towards a horn. In the present case, where a reflection of 5 to 10% of the emitted power is still acceptable, an approximate design of the shape as shown in the figures 1, 2, 3, 3 is completely sufficient.
  • FIGS. 8a and 8b additional screens 77.78 and 79.80.81 are provided, with which it can be achieved that either ion-supported deposition is carried out (FIG. 8b) or that deposition takes place without simultaneous ion bombardment (FIG. 8a).
  • the magnet system is here, as in the magnet systems of the previous figures, provided with an envelope 82. If the electrons circulate sufficiently between the collisions in the region of the electron cyclotron resonance frequency, the electrons can absorb high kinetic energies. Since the magnetic field does not oppose their movement in the direction of the field lines, in the embodiments according to FIGS.
  • the position of the plane of the microwave window 14 relative to the substrate plane is not limited to parallelism, as is shown in FIGS. 1-3.
  • the described formation of a multi-mode state in the chamber 5 can be achieved by any position of the microwave window 14. It is only important to assign the substrate surface to be treated to the area of the electron cyclotron resonance.
  • the magnetic pole faces do not need to lie in one plane, as shown in FIGS. 4a, b, c, d, e.
  • a deep staggering can be made in such a way that all north pole faces are in a first plane and all south pole surfaces are in a different second plane.
  • the distances between the north and south poles mentioned can also be kept variable.
  • a protective layer made of SiO x which is transparent in the range of visible light, where x is between 1 and 2.
  • a gaseous silicon hydrogen is decomposed in a plasma discharge while supplying oxygen or an oxygen-containing compound, and the SiO x formed is deposited on a front surface mirror forming a substrate.
  • a gaseous monomer from the group of silicon hydrocarbons can be introduced into the plasma discharge.
  • N 2 O which is required in the invention, is about a factor of 10 to 50 below the previously known flow rates.
  • the excretion rate achieved with the invention at approximately 10 nm / s, is at least 50 times greater than the previously known excretion rates.
  • a headlamp reflector attached to a substrate support and freshly steamed with aluminum is driven through the plasma zone at such a speed that each point on the reflector surface has a residence time in the plasma of 5 seconds.
  • Examination of this layer with the aid of photoelectron spectroscopy reveals a ratio of Si: 0 of approx. 1: 1.18, i.e. H. good stoichiometry.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Vapour Deposition (AREA)
EP87111855A 1987-02-21 1987-08-17 Dispositif de production d'un plasma et de traitement de substrats dans ledit plasma Revoked EP0279895B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT87111855T ATE89099T1 (de) 1987-02-21 1987-08-17 Enrichtung zum herstellen eines plasmas und zur behandlung von substraten darin.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873705666 DE3705666A1 (de) 1987-02-21 1987-02-21 Einrichtung zum herstellen eines plasmas und zur behandlung von substraten darin
DE3705666 1987-02-21

Publications (3)

Publication Number Publication Date
EP0279895A2 true EP0279895A2 (fr) 1988-08-31
EP0279895A3 EP0279895A3 (en) 1990-01-31
EP0279895B1 EP0279895B1 (fr) 1993-05-05

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ID=6321527

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EP87111855A Revoked EP0279895B1 (fr) 1987-02-21 1987-08-17 Dispositif de production d'un plasma et de traitement de substrats dans ledit plasma

Country Status (6)

Country Link
US (1) US4939424A (fr)
EP (1) EP0279895B1 (fr)
JP (1) JPS63216298A (fr)
AT (1) ATE89099T1 (fr)
CA (1) CA1281082C (fr)
DE (2) DE3705666A1 (fr)

Cited By (18)

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EP0275965A2 (fr) * 1987-01-19 1988-07-27 Hitachi, Ltd. Appareil opérant avec un plasma
EP0284436A2 (fr) * 1987-03-27 1988-09-28 Canon Kabushiki Kaisha Appareil de traitement de substrats
EP0286132A2 (fr) 1987-04-08 1988-10-12 Hitachi, Ltd. Appareil générateur de plasma
EP0383567A2 (fr) * 1989-02-15 1990-08-22 Hitachi, Ltd. Procédé et appareil de traitement par plasma de micro-ondes
EP0390004A2 (fr) * 1989-03-27 1990-10-03 Anelva Corporation Procédé et dispositif pour la gravure par plasma micro-onde
EP0422430A2 (fr) * 1989-10-11 1991-04-17 Technics Plasma Gmbh Structure de couplage entre micro-ondes et plasma
EP0423498A2 (fr) * 1989-09-20 1991-04-24 Sumitomo Electric Industries, Ltd. Méthode et appareillage pour production de matière dure
WO1991012353A1 (fr) * 1990-02-09 1991-08-22 Robert Bosch Gmbh Procede de traitement de substrats dans un plasma produit par des micro-ondes et maintenu avec un gaz
DE4110632A1 (de) * 1990-04-02 1991-10-10 Fuji Electric Co Ltd Plasmabearbeitungseinrichtung
WO1992006224A1 (fr) * 1990-09-29 1992-04-16 Robert Bosch Gmbh Procede et dispositif pour l'enduction de pieces
EP0490028A1 (fr) * 1990-12-10 1992-06-17 Leybold Aktiengesellschaft Système de couches sur la surface d'un matériau et procédé pour sa fabrication
EP0517999A1 (fr) * 1991-06-12 1992-12-16 Leybold Aktiengesellschaft Dispositif pour l'érosion réactive à faisceau ionique et le dépôt chimique par vapeur assisté par plasma
US5180948A (en) * 1991-03-01 1993-01-19 Roehm Gmbh Chemische Fabrik Plasma generator with secondary radiator
EP0527290A1 (fr) * 1991-08-08 1993-02-17 Leybold Aktiengesellschaft Dispositif pour la mise en oeuvre d'un procédé couche mince pour le traitement de substrats de grande surface
EP0569296A1 (fr) * 1992-05-07 1993-11-10 France Telecom Dispositif et machine à plasma de traitement chimique et procédé utilisant ce dispositif
EP0574178A2 (fr) * 1992-06-11 1993-12-15 Sakae Electronics Industrial Co., Ltd. Appareil et méthode pour le revêtement à sec
EP0716562A1 (fr) * 1994-12-07 1996-06-12 Leybold Aktiengesellschaft Dispositif pour la mise en oeuvre d'un procédé couche mince pour le traitement de substrats de grande surface
DE19704947A1 (de) * 1997-02-10 1998-08-13 Leybold Systems Gmbh Verfahren und Vorrichtung zur Schutzbeschichtung von Verspiegelungsschichten

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DE3820237C1 (fr) * 1988-06-14 1989-09-14 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften Ev, 3400 Goettingen, De
DE3920834A1 (de) * 1989-06-24 1991-02-21 Leybold Ag Mikrowellen-kathodenzerstaeubungseinrichtung
DE4034450A1 (de) * 1989-12-23 1991-06-27 Leybold Ag Einrichtung fuer die erzeugung eines plasmas durch mikrowellen
JPH0750844B2 (ja) * 1989-12-28 1995-05-31 理化学研究所 プラズマ発生用マイクロ波アンテナ
FR2671931A1 (fr) * 1991-01-22 1992-07-24 Metal Process Dispositif de repartition d'une energie micro-onde pour l'excitation d'un plasma.
US5866986A (en) * 1996-08-05 1999-02-02 Integrated Electronic Innovations, Inc. Microwave gas phase plasma source
DE19812558B4 (de) * 1998-03-21 2010-09-23 Roth & Rau Ag Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
US7445817B2 (en) * 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US6846396B2 (en) * 2002-08-08 2005-01-25 Applied Materials, Inc. Active magnetic shielding
KR20050089516A (ko) * 2004-03-05 2005-09-08 학교법인 성균관대학 전자석이 구비된 반도체 식각용 중성빔 소오스
US8513626B2 (en) * 2007-01-12 2013-08-20 Applied Materials, Inc. Method and apparatus for reducing patterning effects on a substrate during radiation-based heating
WO2008153988A1 (fr) * 2007-06-09 2008-12-18 Chien Ouyang Dissipateur thermique de refroidissement au plasma
KR100965491B1 (ko) * 2009-11-02 2010-06-24 박영배 복합 플라스마 발생장치
KR20240038658A (ko) * 2021-06-02 2024-03-25 리메르, 엘엘씨 마이크로파를 이용한 플라즈마 생성 시스템 및 방법

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EP0275965A3 (en) * 1987-01-19 1990-04-25 Hitachi, Ltd. Plasma operation apparatus
EP0275965A2 (fr) * 1987-01-19 1988-07-27 Hitachi, Ltd. Appareil opérant avec un plasma
EP0284436A2 (fr) * 1987-03-27 1988-09-28 Canon Kabushiki Kaisha Appareil de traitement de substrats
EP0284436A3 (en) * 1987-03-27 1989-09-06 Canon Kabushiki Kaisha Substrate-treating apparatus
EP0286132A2 (fr) 1987-04-08 1988-10-12 Hitachi, Ltd. Appareil générateur de plasma
EP0286132B1 (fr) * 1987-04-08 1993-09-08 Hitachi, Ltd. Appareil générateur de plasma
EP0383567A3 (fr) * 1989-02-15 1991-06-12 Hitachi, Ltd. Procédé et appareil de traitement par plasma de micro-ondes
EP0383567A2 (fr) * 1989-02-15 1990-08-22 Hitachi, Ltd. Procédé et appareil de traitement par plasma de micro-ondes
EP0390004A2 (fr) * 1989-03-27 1990-10-03 Anelva Corporation Procédé et dispositif pour la gravure par plasma micro-onde
EP0390004A3 (fr) * 1989-03-27 1991-08-07 Anelva Corporation Procédé et dispositif pour la gravure par plasma micro-onde
EP0423498A2 (fr) * 1989-09-20 1991-04-24 Sumitomo Electric Industries, Ltd. Méthode et appareillage pour production de matière dure
EP0423498A3 (en) * 1989-09-20 1991-05-08 Sumitomo Electric Industries, Ltd. Method of and apparatus for synthesizing hard material
US5436036A (en) * 1989-09-20 1995-07-25 Sumitomo Electric Industries, Ltd. Method of synthesizing hard material
EP0422430A3 (en) * 1989-10-11 1991-08-14 Technics Plasma Gmbh Coupling structure between microwaves and plasma
EP0422430A2 (fr) * 1989-10-11 1991-04-17 Technics Plasma Gmbh Structure de couplage entre micro-ondes et plasma
WO1991012353A1 (fr) * 1990-02-09 1991-08-22 Robert Bosch Gmbh Procede de traitement de substrats dans un plasma produit par des micro-ondes et maintenu avec un gaz
US5324362A (en) * 1990-02-09 1994-06-28 Robert Bosch Gmbh Apparatus for treating substrates in a microwave-generated gas-supported plasma
DE4110632A1 (de) * 1990-04-02 1991-10-10 Fuji Electric Co Ltd Plasmabearbeitungseinrichtung
WO1992006224A1 (fr) * 1990-09-29 1992-04-16 Robert Bosch Gmbh Procede et dispositif pour l'enduction de pieces
EP0490028A1 (fr) * 1990-12-10 1992-06-17 Leybold Aktiengesellschaft Système de couches sur la surface d'un matériau et procédé pour sa fabrication
US5180948A (en) * 1991-03-01 1993-01-19 Roehm Gmbh Chemische Fabrik Plasma generator with secondary radiator
EP0517999A1 (fr) * 1991-06-12 1992-12-16 Leybold Aktiengesellschaft Dispositif pour l'érosion réactive à faisceau ionique et le dépôt chimique par vapeur assisté par plasma
EP0527290A1 (fr) * 1991-08-08 1993-02-17 Leybold Aktiengesellschaft Dispositif pour la mise en oeuvre d'un procédé couche mince pour le traitement de substrats de grande surface
US5237152A (en) * 1991-08-08 1993-08-17 Leybold Aktiengesellschaft Apparatus for thin-coating processes for treating substrates of great surface area
FR2691035A1 (fr) * 1992-05-07 1993-11-12 France Telecom Dispositif et machine à plasma de traitement chimique et procédé utilisant ce dispositif.
US5328515A (en) * 1992-05-07 1994-07-12 France Telecom Etablissement Autonome De Droit Public Chemical treatment plasma apparatus for forming a ribbon-like plasma
EP0569296A1 (fr) * 1992-05-07 1993-11-10 France Telecom Dispositif et machine à plasma de traitement chimique et procédé utilisant ce dispositif
EP0574178A2 (fr) * 1992-06-11 1993-12-15 Sakae Electronics Industrial Co., Ltd. Appareil et méthode pour le revêtement à sec
EP0574178A3 (en) * 1992-06-11 1994-08-24 Sakae Electronics Ind Co Ltd Dry process coating method and apparatus therefor
US5378507A (en) * 1992-06-11 1995-01-03 Sakae Electronics Industrial Co., Ltd. Dry coating method
EP0716562A1 (fr) * 1994-12-07 1996-06-12 Leybold Aktiengesellschaft Dispositif pour la mise en oeuvre d'un procédé couche mince pour le traitement de substrats de grande surface
DE19704947A1 (de) * 1997-02-10 1998-08-13 Leybold Systems Gmbh Verfahren und Vorrichtung zur Schutzbeschichtung von Verspiegelungsschichten
US6007875A (en) * 1997-02-10 1999-12-28 Leybold Systems Gmbh Method and apparatus for applying protective coatings on reflective layers

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EP0279895B1 (fr) 1993-05-05
DE3785749D1 (de) 1993-06-09
DE3705666A1 (de) 1988-09-01
US4939424A (en) 1990-07-03
CA1281082C (fr) 1991-03-05
EP0279895A3 (en) 1990-01-31
ATE89099T1 (de) 1993-05-15
JPS63216298A (ja) 1988-09-08

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