FR2547692B1 - Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique - Google Patents

Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique

Info

Publication number
FR2547692B1
FR2547692B1 FR8310116A FR8310116A FR2547692B1 FR 2547692 B1 FR2547692 B1 FR 2547692B1 FR 8310116 A FR8310116 A FR 8310116A FR 8310116 A FR8310116 A FR 8310116A FR 2547692 B1 FR2547692 B1 FR 2547692B1
Authority
FR
France
Prior art keywords
plasma
producing
electronic temperature
low electronic
homogeneous volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8310116A
Other languages
English (en)
Other versions
FR2547692A1 (fr
Inventor
Yves Arnal
Jacques Pelletier
Claude Pomot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR8310116A priority Critical patent/FR2547692B1/fr
Priority to US06/620,136 priority patent/US4534842A/en
Priority to EP84420103A priority patent/EP0129490B1/fr
Priority to DE8484420103T priority patent/DE3478187D1/de
Priority to JP12086584A priority patent/JPS60246599A/ja
Publication of FR2547692A1 publication Critical patent/FR2547692A1/fr
Application granted granted Critical
Publication of FR2547692B1 publication Critical patent/FR2547692B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/10—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball
    • H05H1/11—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball using cusp configuration
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
FR8310116A 1983-06-15 1983-06-15 Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique Expired FR2547692B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8310116A FR2547692B1 (fr) 1983-06-15 1983-06-15 Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique
US06/620,136 US4534842A (en) 1983-06-15 1984-06-13 Process and device for producing a homogeneous large-volume plasma of high density and of low electronic temperature
EP84420103A EP0129490B1 (fr) 1983-06-15 1984-06-14 Procédé et dispositif de production d'un plasma de grand volume homogène, de grande densité et de faible température électronique
DE8484420103T DE3478187D1 (en) 1983-06-15 1984-06-14 Method and device for the production of a uniform plasma having a large volume, a high density and a low electron temperature
JP12086584A JPS60246599A (ja) 1983-06-15 1984-06-14 高密度・低電子温度の均質大容積プラズマ発生方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8310116A FR2547692B1 (fr) 1983-06-15 1983-06-15 Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique

Publications (2)

Publication Number Publication Date
FR2547692A1 FR2547692A1 (fr) 1984-12-21
FR2547692B1 true FR2547692B1 (fr) 1988-07-15

Family

ID=9289922

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8310116A Expired FR2547692B1 (fr) 1983-06-15 1983-06-15 Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique

Country Status (2)

Country Link
JP (1) JPS60246599A (fr)
FR (1) FR2547692B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62172700A (ja) * 1986-01-24 1987-07-29 理化学研究所 プラズマ閉込用磁場発生装置
DE3705666A1 (de) * 1987-02-21 1988-09-01 Leybold Ag Einrichtung zum herstellen eines plasmas und zur behandlung von substraten darin
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device
EP4084040A1 (fr) * 2021-04-29 2022-11-02 voestalpine Stahl GmbH Procédé et dispositifs pour le traitement au plasma

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643123A (en) * 1968-10-28 1972-02-15 Trw Inc Plasma containment device
FR2475798A1 (fr) * 1980-02-13 1981-08-14 Commissariat Energie Atomique Procede et dispositif de production d'ions lourds fortement charges et une application mettant en oeuvre le procede
CA1159012A (fr) * 1980-05-02 1983-12-20 Seitaro Matsuo Dispositif de deposition de plasma
FR2512623A1 (fr) * 1981-09-10 1983-03-11 Commissariat Energie Atomique Procede de fusion et/ou d'evaporation pulsee d'un materiau solide
US4483737A (en) * 1983-01-31 1984-11-20 University Of Cincinnati Method and apparatus for plasma etching a substrate

Also Published As

Publication number Publication date
FR2547692A1 (fr) 1984-12-21
JPS60246599A (ja) 1985-12-06

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse