WO1992006224A1 - Procede et dispositif pour l'enduction de pieces - Google Patents

Procede et dispositif pour l'enduction de pieces Download PDF

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Publication number
WO1992006224A1
WO1992006224A1 PCT/DE1991/000707 DE9100707W WO9206224A1 WO 1992006224 A1 WO1992006224 A1 WO 1992006224A1 DE 9100707 W DE9100707 W DE 9100707W WO 9206224 A1 WO9206224 A1 WO 9206224A1
Authority
WO
WIPO (PCT)
Prior art keywords
coating
plasma
parts
magnets
coated
Prior art date
Application number
PCT/DE1991/000707
Other languages
German (de)
English (en)
Inventor
Gerda Mutschler
Günter Schneider
Gerhard Waller
Gerhard Benz
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO1992006224A1 publication Critical patent/WO1992006224A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Definitions

  • the invention relates to a method and a device for coating parts according to the preamble of claims 1 and 5.
  • the chemically pre-cleaned parts are freed from contamination by a sputter etching process within a vacuum chamber.
  • the surface of the components is exposed to an intensive bombardment of ions, which removes approx. 50 to 100 n from the surface.
  • the efficiency of this process is inversely related to the process pressure and directly related to the number of available ions.
  • the layer that forms should be exposed to constant ion bombardment, which on the one hand removes loosely adhering layer parts and on the other hand causes a compaction of the layer (ion plating effect).
  • a large number of ions is required at a low process pressure.
  • the current solutions for process step 1 are direct voltage or high-frequency glow discharges which are coupled directly to the components or plasma sources such as sputter cathodes or arc discharges from which the ions are drawn onto the component. All of these methods have specific problems such as high process pressure in the recipient, low plasma ionization or difficult component coupling to the high frequency.
  • the plasma density is often very low and mostly dependent on the coating rate, so that the ion bombardment of the layer and the coating rate cannot be selected independently.
  • the method according to the invention with the characterizing features of the main claim has the advantage that a high ion density can be generated even at low pressures by introducing a plasma etching device which generates a plasma according to the principle of electron cyclotron resonance. In this way it is possible to run the etching process very efficiently at process pressures of less than 10 Pa. Furthermore, the transition from etching to coating can take place without any interruption in the process and can be controlled independently as a result of the pressure compatibility of the plasma source with conventional shielding sources and the physical independence of the plasma source and coating source. In addition, both the improved etching process before the coating and the increased ion bombardment during the coating mean that the temperature of the substrates can be reduced and thus temperature-sensitive parts can also be coated.
  • Magnetic fields which originate from magnets attached in the device, force the moving electrons of the plasma into a circular path and thus increase the ion density in the space in front of the magnets due to the increased collision rate.
  • microwave energy coupled in by the microwave antennas is selected in its frequency so that it is in resonance with the electrons moving on circular orbits, a large ion density in the plasma is achieved by the optimal energy absorption.
  • the antenna length limits the antenna length to approx. 1/4 of the wavelength of the microwave radiation avoids mutual interference between the antennas and reduces the load and the resulting heating of the coaxial lines. If the antennas are surrounded by waveguides, the output of which points in the direction of a magnet, it is achieved that the coupled microwave power is directed almost completely onto the area in front of the magnet.
  • a force component acts on the ions, which directs them to the parts to be coated.
  • the application of a high-frequency potential makes it possible to expose non-conductive parts to increased ion bombardment, with frequencies in the 100 KHz range being sufficient.
  • an electron cyclotron resonance plasma source in a coating system is a very advantageous method with which a plasma can be generated at very low pressures, which serves as an ion supplier for an etching and coating process.
  • a plasma can be generated at very low pressures, which serves as an ion supplier for an etching and coating process.
  • FIG. 1 shows a top view in a simplified representation of a coating system with two coating stations.
  • FIGS. 2 and 3 show a magnet arrangement and a microwave antenna.
  • a microwave antenna with a waveguide is shown in section in FIG. description
  • Figure 1 shows a coating system 10, which is surrounded by an airtight outer jacket 12.
  • the coating system 10 has a pump 14 with which the system can be evacuated. Flanged onto the outer jacket 12, two coating positions 16 are diametrically opposed, which are equipped with known magnetron sputter cathodes 18.
  • the coating system 10 also has a rotating basket 20 for receiving parts (not shown) to be coated, which extends almost over the entire height of the coating system 10 and is centrally rotatably fastened.
  • each magnet 22 consists of three mutually parallel rows of individual magnets 26, 28, 30, which are arranged with alternating magnetization and are parallel to the axis of the coating system 10 extend, pie two outer magnet rows 26, 30, which are of the same magnetization orientation, have a greater length than the middle magnet row and are each at the upper and our ends via a magnet. 32 or 34 of the same orientation connected. This results in a localization of the magnetic field on a toroidal area in front of the magnet 22.
  • the magnets 22 consist of Sm-Co and meet the electron cyclotron resonance condition approx. 1 cm in front of their surface (magnetic field strengths 87.5 mT at 2.45 GHz) ).
  • Microwave antennas 36 are attached in the immediate vicinity, laterally or directly in front of the magnets 22, the antenna rods 38 of which extend parallel to the axis of the coating system 10.
  • the Microwave antennas 36 are guided through the bottom of the coating system 10 by means of a vacuum feed-through 40 (FIG. 3).
  • a vacuum feed-through 40 At the outer end 42 of the microwave antenna 36, as seen from the coating system 10, there is a coaxial cable connection 44 via which the microwave antenna 36 is connected to a microwave generator (not shown).
  • a line 46 leads from the cable connection 44 to the antenna rod 38, from where the microwave is emitted into the coating system 10.
  • the microwave antenna 36 is provided below the antenna rod 38 with a vapor protection 48 in the form of a round plate.
  • the length of the antenna rods 38 is approximately 3 to 4 cm, which corresponds to approximately a quarter of the wavelength of the microwave radiation fed in.
  • the microwave is directed onto the magnets 22 by means of hollow conductors 52 surrounding the antenna rods 38 (FIG. 4).
  • the ions generated can be pulled out of the plasma by applying a high negative potential (approx. 0.5 to 1 kV) to the rotating basket and thus to the parts to be coated, and can be used for sputter etching of the substrates.
  • a high-frequency potential approximately 0.5 to 1 kV
  • the rotary basket 20 transfers the parts into the coating positions in front of the magnetron sputtering cathodes 18.
  • the electron cyclotron resonance plasma sources achieve the following:
  • layer deposition also takes place outside the actual coating zones 54.
  • layer-forming gases eg acetylene
  • layer deposition also takes place outside the actual coating zones 54.
  • layer-forming gases eg acetylene
  • layer-forming gases eg acetylene
  • sputter sources a known technique for producing, for example, metal-containing carbon layers. Since this layer deposition from the gas phase must be in equilibrium with the metal deposition in front of the magnetron sputtering cathodes 18, the latter can be operated with higher output, which leads overall to higher coating rates and thus to shorter coating times.
  • An extremely efficient electron cyclotron resonance plasma source which can also be retrofitted in almost any coating recipient, essentially contains the individual parts: one or more magnets 22, the length of which is appropriate to the height of the coating system 10, which is approximately 1 cm above their surface meet the electron cyclotron resonance condition and are provided with a vapor protection 24; Microwave antennas 36, with a coaxial connection 44, a vacuum feed-through 40, an evaporation protection 48 and a short antenna rod 38. Waveguide elements 52 can be provided to improve the efficiency.
  • a plasma can be generated which can serve as an ion supplier for both etching and coating processes.
  • the pressure range in which the plasma is ignited is compatible with the conventional magnetron sputtering or electron beam evaporation devices.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention se rapporte à un procédé et à un dispositif pour l'enduction de pièces à forte sollicitation tribologique, en particulier de composants de systèmes d'injection de carburant. Il est proposé d'incorporer dans l'installation d'enduction (10) un ou plusieurs dispositifs de gravure au plasma fonctionnant selon le principe de la résonance électron-cyclotron à micro-ondes. De cette manière, les pièces à enduire peuvent être nettoyées, avant l'enduction, par un processus de gravure par crépitement se déroulant dans de très bonnes conditions de vide.
PCT/DE1991/000707 1990-09-29 1991-09-06 Procede et dispositif pour l'enduction de pieces WO1992006224A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4030900.2 1990-09-29
DE19904030900 DE4030900A1 (de) 1990-09-29 1990-09-29 Verfahren und einrichtung zum beschichten von teilen

Publications (1)

Publication Number Publication Date
WO1992006224A1 true WO1992006224A1 (fr) 1992-04-16

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ID=6415280

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1991/000707 WO1992006224A1 (fr) 1990-09-29 1991-09-06 Procede et dispositif pour l'enduction de pieces

Country Status (2)

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DE (1) DE4030900A1 (fr)
WO (1) WO1992006224A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0574178A2 (fr) * 1992-06-11 1993-12-15 Sakae Electronics Industrial Co., Ltd. Appareil et méthode pour le revêtement à sec
EP0619380A1 (fr) * 1993-04-06 1994-10-12 Ce.Te.V. Centro Tecnologie Del Vuoto Procédé et appareil pour la déposition d'un film mince par PECVD et pulvérisation cathodique
CN113808898A (zh) * 2020-06-16 2021-12-17 中微半导体设备(上海)股份有限公司 耐等离子体腐蚀零部件和反应装置及复合涂层形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5232569A (en) * 1992-03-09 1993-08-03 Tulip Memory Systems, Inc. Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates
DE4335224A1 (de) * 1993-10-15 1995-04-20 Leybold Ag Vorrichtung für die Herstellung optischer Schichten
JP2000017457A (ja) * 1998-07-03 2000-01-18 Shincron:Kk 薄膜形成装置および薄膜形成方法
DE102004045046B4 (de) * 2004-09-15 2007-01-04 Schott Ag Verfahren und Vorrichtung zum Aufbringen einer elektrisch leitfähigen transparenten Beschichtung auf ein Substrat

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
GB2170226A (en) * 1985-01-30 1986-07-30 Leybold Heraeus Gmbh & Co Kg Coating machine parts and tools with high hardness material
EP0279895A2 (fr) * 1987-02-21 1988-08-31 Leybold Aktiengesellschaft Dispositif de production d'un plasma et de traitement de substrats dans ledit plasma
EP0326405A2 (fr) * 1988-01-27 1989-08-02 Semiconductor Energy Laboratory Co., Ltd. Dispositif de réaction chimique en phase vapeur utilisant un plasma

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
GB2170226A (en) * 1985-01-30 1986-07-30 Leybold Heraeus Gmbh & Co Kg Coating machine parts and tools with high hardness material
EP0279895A2 (fr) * 1987-02-21 1988-08-31 Leybold Aktiengesellschaft Dispositif de production d'un plasma et de traitement de substrats dans ledit plasma
EP0326405A2 (fr) * 1988-01-27 1989-08-02 Semiconductor Energy Laboratory Co., Ltd. Dispositif de réaction chimique en phase vapeur utilisant un plasma

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS. Bd. 29, Nr. 2, Februar 1990, TOKYO JP Seiten 334 - 339; MANABE ET AL.: 'Zinc oxide thin films prepared by the electron-cyclotron-resonance plasma sputtering method' *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0574178A2 (fr) * 1992-06-11 1993-12-15 Sakae Electronics Industrial Co., Ltd. Appareil et méthode pour le revêtement à sec
EP0574178A3 (en) * 1992-06-11 1994-08-24 Sakae Electronics Ind Co Ltd Dry process coating method and apparatus therefor
US5378507A (en) * 1992-06-11 1995-01-03 Sakae Electronics Industrial Co., Ltd. Dry coating method
EP0619380A1 (fr) * 1993-04-06 1994-10-12 Ce.Te.V. Centro Tecnologie Del Vuoto Procédé et appareil pour la déposition d'un film mince par PECVD et pulvérisation cathodique
US5466296A (en) * 1993-04-06 1995-11-14 Ce.Te.V Centro Technologie Del Vuoto Thin film deposition apparatus, mainly dedicated to PECVD and sputtering techniques and respective processes
CN113808898A (zh) * 2020-06-16 2021-12-17 中微半导体设备(上海)股份有限公司 耐等离子体腐蚀零部件和反应装置及复合涂层形成方法
CN113808898B (zh) * 2020-06-16 2023-12-29 中微半导体设备(上海)股份有限公司 耐等离子体腐蚀零部件和反应装置及复合涂层形成方法

Also Published As

Publication number Publication date
DE4030900A1 (de) 1992-04-02

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