EP0252295A2 - Solutions de décapage du cuivre - Google Patents
Solutions de décapage du cuivre Download PDFInfo
- Publication number
- EP0252295A2 EP0252295A2 EP87108025A EP87108025A EP0252295A2 EP 0252295 A2 EP0252295 A2 EP 0252295A2 EP 87108025 A EP87108025 A EP 87108025A EP 87108025 A EP87108025 A EP 87108025A EP 0252295 A2 EP0252295 A2 EP 0252295A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- compounds
- etching solutions
- copper
- printed circuit
- circuit boards
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052802 copper Inorganic materials 0.000 claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 36
- -1 peroxide compounds Chemical class 0.000 claims abstract description 11
- 150000002366 halogen compounds Chemical class 0.000 claims abstract description 9
- 230000002378 acidificating effect Effects 0.000 claims abstract description 6
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims abstract description 5
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims abstract description 5
- 238000004870 electrical engineering Methods 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 150000001298 alcohols Chemical class 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 3
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical group [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 150000002989 phenols Chemical class 0.000 claims description 3
- 150000003585 thioureas Chemical class 0.000 claims description 3
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical class C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- GKQHIYSTBXDYNQ-UHFFFAOYSA-M 1-dodecylpyridin-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+]1=CC=CC=C1 GKQHIYSTBXDYNQ-UHFFFAOYSA-M 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- BLSVCHHBHKGCSQ-UHFFFAOYSA-N (2-methylphenyl)urea Chemical compound CC1=CC=CC=C1NC(N)=O BLSVCHHBHKGCSQ-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- DBGHHEXNWSAWPN-UHFFFAOYSA-M 1-ethylpyridin-1-ium;ethyl sulfate Chemical compound CCOS([O-])(=O)=O.CC[N+]1=CC=CC=C1 DBGHHEXNWSAWPN-UHFFFAOYSA-M 0.000 description 1
- LXUNZSDDXMPKLP-UHFFFAOYSA-N 2-Methylbenzenethiol Chemical compound CC1=CC=CC=C1S LXUNZSDDXMPKLP-UHFFFAOYSA-N 0.000 description 1
- YYPLPZPLLWYWKD-UHFFFAOYSA-N 2-ethenylpyridin-1-ium;chloride Chemical compound Cl.C=CC1=CC=CC=N1 YYPLPZPLLWYWKD-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- JZMJDSHXVKJFKW-UHFFFAOYSA-M methyl sulfate(1-) Chemical compound COS([O-])(=O)=O JZMJDSHXVKJFKW-UHFFFAOYSA-M 0.000 description 1
- OOHAUGDGCWURIT-UHFFFAOYSA-N n,n-dipentylpentan-1-amine Chemical compound CCCCCN(CCCCC)CCCCC OOHAUGDGCWURIT-UHFFFAOYSA-N 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical class CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- IIOICIPTWIOOGA-UHFFFAOYSA-N pent-3-yne-2,2-diol Chemical compound CC#CC(C)(O)O IIOICIPTWIOOGA-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
Definitions
- the application relates to aqueous copper etching solutions containing customary acid etching media based on iron chloride, copper chloride or peroxide compounds according to the preamble of claim 1 and a method according to the preamble of claim 7 for etching copper on printed circuit boards and plated-through circuits.
- a disadvantage of this method is that, particularly in the case of printed circuit boards with one or more metal cores, such as, for example, iron-nickel or iron-cobalt cores, copper is cemented due to the base nature of the metals used, which subsequently leads to inadequate adhesion for the purpose of through-contacting the chemically deposited copper.
- metal cores such as, for example, iron-nickel or iron-cobalt cores
- the object of the present invention is to provide a copper etching solution which prevents cementation of copper on base metals and their alloys and thus enables a subsequent adhesive deposition of copper even on printed circuit boards with one or more metal core bearings.
- aqueous copper etching solution of the type described at the outset, which is characterized in that halogen compounds are additionally present.
- the present invention also relates to a method using the copper etching solutions according to the invention for direct, adhesive through-contacting of printed circuit boards with one or more metal cores, in particular iron-nickel or iron-cobalt core.
- the etching solution according to the invention surprisingly prevents cementation of Kufper and thereby leads to an extraordinarily high copper-metal core adhesion during the subsequent chemical metallization.
- Monovalent metal equivalents A of the general formula AX are to be understood as those of the alkali metals, such as sodium or potassium, of the alkaline earth metals, such as magnesium and calcium, and the transition metals such as iron, copper and others.
- Halogen compounds include, for example, fluorine, chlorine and bromine.
- Halogen compounds with excellent activity include sodium chloride, potassium chloride, potassium fluoride and hydrochloric acid.
- the labeled halogen compounds can be used according to the invention in acid copper etching solutions, either individually or in a mixture with one another in concentrations of 0.5 to 50 g / liter, preferably 5 to 20 g / liter.
- etching without suds, non-adhesive deposition of copper on the metal cores of printed circuit boards can be achieved in the case of peroxide-containing etching solutions if halide ions are added to the etching solution in such a way that the concentration ratio of halide to copper ( calculated in g / liter) is in the range from 0.1: 1 to 100: 1, preferably between 0.5: 1 and 1.0: 1.
- All customary acidic etching media such as those based on iron chloride, copper chloride or peroxide compound, are suitable as the acidic copper etching solution.
- Peroxide compounds include, for example, hydrogen peroxide, ammonium persulfate, sodium peroxodiaulfate and others.
- sulfuric or hydrochloric acid etching solutions are usually used.
- the duration of the treatment is expediently about 1 to 2 minutes at room temperature, but depending on the desired effect, it can also be carried out with shorter or longer treatment times or lower or higher temperatures.
- the plates treated in this way are then rinsed and then activated and chemically metallized in the usual manner.
- the copper etching solutions according to the invention avoid the attack of the etching medium on the metal core of the printed circuit boards if they also contain organic compounds based on aliphatic amines or alcohols, thioureas, aromatic thio compounds, pyridinium compounds, PynmidJLniumENSen, alkoxylated alcohols or phenols in concentrations of o, oo5 to 15 g / liter, preferably from o, ol to 5 g / liter.
- Examples of such compounds are: triamylamine, dicyclohexylamine, o-tolylurea, thiourea, o-thiocresol, N-laurylpyridinium chloride, N-ethylpyridinium-ethyl sulfate, ethoxylated nonylphenol, ethoxylated monyl alcohol, N-haptadiamineth (trimethyl) trimethane; N-lauryl trimethyl diamine (N; N; N-triethoxylated), vinyl pyridine chloride, polyvinyl pyrinium methyl sulfate and butynediol.
- the copper etching solutions according to the invention are used for the production of printed circuit boards, in particular plated-through circuit boards, for electrical engineering and electronics, for example for the adhesive through-plating of so-called metal-core multilayer boards.
- the plated-through printed circuit boards treated according to the invention have excellent adhesion of the copper to the metal core while at the same time reducing the etching back of the base metal core bottom brackets and survive up to 5 times the so-called oil shock test, which means great technical progress.
- Treatment duration 1.5 ⁇ 0.5 min.
- Treatment duration 1.5 ⁇ 0.5 min.
- Treatment duration 1 ⁇ 0.5 minutes
- Treatment duration 2 ⁇ 0.5 min.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863623504 DE3623504A1 (de) | 1986-07-09 | 1986-07-09 | Kupferaetzloesungen |
DE3623504 | 1986-07-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0252295A2 true EP0252295A2 (fr) | 1988-01-13 |
EP0252295A3 EP0252295A3 (fr) | 1989-03-15 |
Family
ID=6305009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP87108025A Withdrawn EP0252295A3 (fr) | 1986-07-09 | 1987-06-03 | Solutions de décapage du cuivre |
Country Status (4)
Country | Link |
---|---|
US (1) | US4849124A (fr) |
EP (1) | EP0252295A3 (fr) |
JP (1) | JPS6326385A (fr) |
DE (1) | DE3623504A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002004706A1 (fr) * | 2000-07-07 | 2002-01-17 | Atotech Deutschland Gmbh | Liquide de traitement acide et procede de traitement de surfaces de cuivre |
EP1500719A1 (fr) * | 2003-07-25 | 2005-01-26 | Mec Company Ltd. | Solution de décapage, solution de remontage et méthode pour fabriquer des cablages en cuivre |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4885128A (en) * | 1985-07-30 | 1989-12-05 | Janez Megusar | Method for improving performance of irradiated structural materials |
FR2621052A1 (fr) * | 1987-09-25 | 1989-03-31 | Solvay | Bains et procede pour le polissage chimique de surfaces en cuivre ou en alliage de cuivre |
JP3400558B2 (ja) * | 1994-08-12 | 2003-04-28 | メック株式会社 | 銅および銅合金のエッチング液 |
GB9425090D0 (en) * | 1994-12-12 | 1995-02-08 | Alpha Metals Ltd | Copper coating |
JP3974305B2 (ja) * | 1999-06-18 | 2007-09-12 | エルジー フィリップス エルシーディー カンパニー リミテッド | エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器 |
US6841084B2 (en) | 2002-02-11 | 2005-01-11 | Nikko Materials Usa, Inc. | Etching solution for forming an embedded resistor |
CA2507639C (fr) | 2002-11-29 | 2013-08-06 | Rhodia Organique Fine Limited | Fluides frigorigenes pour refroidisseurs |
CA2474420A1 (fr) * | 2003-07-15 | 2005-01-15 | Star Bronze Company, Inc. | Decapant pour peinture a base d'eau |
CN1899003B (zh) * | 2004-03-03 | 2010-12-29 | 揖斐电株式会社 | 蚀刻液、蚀刻方法以及印刷电路板 |
US7541275B2 (en) * | 2004-04-21 | 2009-06-02 | Texas Instruments Incorporated | Method for manufacturing an interconnect |
JP4631394B2 (ja) * | 2004-10-29 | 2011-02-16 | 日立化成工業株式会社 | 金属のエッチング液及び及びプリント配線板の製造方法 |
US8303832B2 (en) * | 2009-08-17 | 2012-11-06 | Palo Alto Research Center Incorporated | Solid inks for masks for printed circuit boards and other electronic devices |
US8211617B2 (en) * | 2009-08-17 | 2012-07-03 | Palo Alto Research Center Incorporated | Solid inks for printed masks |
CN111542648A (zh) * | 2018-01-05 | 2020-08-14 | 株式会社Adeka | 组合物和蚀刻方法 |
US11678433B2 (en) | 2018-09-06 | 2023-06-13 | D-Wave Systems Inc. | Printed circuit board assembly for edge-coupling to an integrated circuit |
US11647590B2 (en) | 2019-06-18 | 2023-05-09 | D-Wave Systems Inc. | Systems and methods for etching of metals |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1232984B (de) * | 1961-08-04 | 1967-01-26 | Fmc Corp | AEtzmittel und Verfahren zum AEtzen von Kupfertiefdruckformen |
US3756957A (en) * | 1971-03-15 | 1973-09-04 | Furukawa Electric Co Ltd | Solutions for chemical dissolution treatment of metallic materials |
FR2251631A1 (fr) * | 1973-11-19 | 1975-06-13 | Tokai Electro Chemical Co | |
DE2557269A1 (de) * | 1975-12-19 | 1977-06-30 | Licentia Gmbh | Verfahren zum aetzen von kupfer oder kupferlegierungen |
DE2739494A1 (de) * | 1977-08-30 | 1979-03-08 | Kolbe & Co Hans | Verfahren zum herstellen von elektrischen leiterplatten und basismaterial fuer solche |
DE2942504A1 (de) * | 1979-10-20 | 1981-04-30 | Robert Bosch Gmbh, 7000 Stuttgart | Aetzloesung zum aetzen von kupfer |
GB2131454A (en) * | 1982-12-07 | 1984-06-20 | Jury Ivanovich Naumov | Process for regeneration of iron-copper chloride etching solution |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2908557A (en) * | 1957-01-07 | 1959-10-13 | Rca Corp | Method of etching copper |
US3650957A (en) * | 1970-07-24 | 1972-03-21 | Shipley Co | Etchant for cupreous metals |
JPS5221460B1 (fr) * | 1971-04-26 | 1977-06-10 | ||
US4110237A (en) * | 1973-11-19 | 1978-08-29 | Tokai Denka Kabushiki Kaisha | Compositions containing a diazine and a halogen compound for catalyzing copper etching solutions |
US3926699A (en) * | 1974-06-17 | 1975-12-16 | Rbp Chemical Corp | Method of preparing printed circuit boards with terminal tabs |
JPS5871628A (ja) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | 半導体装置の製造方法 |
SE8206447L (sv) * | 1981-11-24 | 1983-05-25 | Occidental Chem Co | Avmetalliseringskomposition och -forfarande |
JPS58197277A (ja) * | 1982-05-08 | 1983-11-16 | Mitsubishi Gas Chem Co Inc | 金属の化学的溶解処理液 |
US4443295A (en) * | 1983-06-13 | 1984-04-17 | Fairchild Camera & Instrument Corp. | Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2 |
-
1986
- 1986-07-09 DE DE19863623504 patent/DE3623504A1/de not_active Withdrawn
-
1987
- 1987-06-03 EP EP87108025A patent/EP0252295A3/fr not_active Withdrawn
- 1987-07-01 US US07/070,865 patent/US4849124A/en not_active Expired - Fee Related
- 1987-07-07 JP JP62167975A patent/JPS6326385A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1232984B (de) * | 1961-08-04 | 1967-01-26 | Fmc Corp | AEtzmittel und Verfahren zum AEtzen von Kupfertiefdruckformen |
US3756957A (en) * | 1971-03-15 | 1973-09-04 | Furukawa Electric Co Ltd | Solutions for chemical dissolution treatment of metallic materials |
FR2251631A1 (fr) * | 1973-11-19 | 1975-06-13 | Tokai Electro Chemical Co | |
DE2557269A1 (de) * | 1975-12-19 | 1977-06-30 | Licentia Gmbh | Verfahren zum aetzen von kupfer oder kupferlegierungen |
DE2739494A1 (de) * | 1977-08-30 | 1979-03-08 | Kolbe & Co Hans | Verfahren zum herstellen von elektrischen leiterplatten und basismaterial fuer solche |
DE2942504A1 (de) * | 1979-10-20 | 1981-04-30 | Robert Bosch Gmbh, 7000 Stuttgart | Aetzloesung zum aetzen von kupfer |
GB2131454A (en) * | 1982-12-07 | 1984-06-20 | Jury Ivanovich Naumov | Process for regeneration of iron-copper chloride etching solution |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002004706A1 (fr) * | 2000-07-07 | 2002-01-17 | Atotech Deutschland Gmbh | Liquide de traitement acide et procede de traitement de surfaces de cuivre |
US7153449B2 (en) | 2000-07-07 | 2006-12-26 | Atotech Deutschland Gmbh | Acidic treatment liquid and method of treating copper surfaces |
KR100813444B1 (ko) * | 2000-07-07 | 2008-03-13 | 아토테크 도이칠란드 게엠베하 | 산성 처리액 및 구리 표면의 처리 방법 |
EP1500719A1 (fr) * | 2003-07-25 | 2005-01-26 | Mec Company Ltd. | Solution de décapage, solution de remontage et méthode pour fabriquer des cablages en cuivre |
US7431861B2 (en) | 2003-07-25 | 2008-10-07 | Mec Company Ltd. | Etchant, replenishment solution and method for producing copper wiring using the same |
CN100459068C (zh) * | 2003-07-25 | 2009-02-04 | Mec株式会社 | 蚀刻剂、补充液以及用它们制造铜布线的方法 |
EP2226410A1 (fr) * | 2003-07-25 | 2010-09-08 | Mec Company Ltd. | Solution de décapage, solution de remontage et méthode pour fabriquer des cablages en cuivre |
Also Published As
Publication number | Publication date |
---|---|
EP0252295A3 (fr) | 1989-03-15 |
JPS6326385A (ja) | 1988-02-03 |
US4849124A (en) | 1989-07-18 |
DE3623504A1 (de) | 1988-01-21 |
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