EP0000412A2 - Halbleiter-Injektionslaser oder-verstärker - Google Patents

Halbleiter-Injektionslaser oder-verstärker Download PDF

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Publication number
EP0000412A2
EP0000412A2 EP78200074A EP78200074A EP0000412A2 EP 0000412 A2 EP0000412 A2 EP 0000412A2 EP 78200074 A EP78200074 A EP 78200074A EP 78200074 A EP78200074 A EP 78200074A EP 0000412 A2 EP0000412 A2 EP 0000412A2
Authority
EP
European Patent Office
Prior art keywords
strip
layer
shaped
passive
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP78200074A
Other languages
English (en)
French (fr)
Other versions
EP0000412B1 (de
EP0000412A3 (en
Inventor
Tullio Ernesto Rozzi
Johannes Hendrik Cornelis Van Heuven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
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Publication date
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of EP0000412A2 publication Critical patent/EP0000412A2/de
Publication of EP0000412A3 publication Critical patent/EP0000412A3/en
Application granted granted Critical
Publication of EP0000412B1 publication Critical patent/EP0000412B1/de
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive

Definitions

  • the invention relates to a semiconductor device for generating or intensifying coherent electromagnetic radiation, comprising a semiconductor body having an active semiconductor layer which comprises a p-n junction and which is bounded on either side by first and second passive semiconductor layers having a lower refractive index for the said radiation than the active layer, one of the passive layers comprising a strip-shaped electrode structure for supplying current to a strip-shaped region of the active layer in a direction substantially perpendicular to the layer so as to produce or intensify the said radiation therein, at least the first passive layer comprising a strip-shaped zone which, in projection, extends fully within the said strip-shaped region and which has a different structure from the parts of the said passive layer adjoining same, said strip-shaped zone having a width which is at most equal to that of the said strip-shaped region.
  • a semiconductor device as described above is disclosed in United States Patent Specification No. 3,883,821.
  • the said p-n junction may extend between two parts of the active layer parallel to the interfaces of the layer with the adjoining passive layers.
  • the p-n junction may alternatively be formed between the active layer and one of the two passive layers adjoining same.
  • the said strip-shaped region of the active layer while neglecting possibly occurring lateral spreading of the current, it is to be understood to mean herein that region of the active layer which in projection is bounded by the outline of the strip-shaped electrode structure.
  • Lasers Semiconductor devices for generating coherent electromagnetic radiation (lasers) or for the intensification (amplification) thereof (traveling wave intensifiers) are known in many constructions.
  • the intensification occurs in a thin layer, the active layer, of which, at least in the case of lasers, a part is situated within a resonant cavity which is formed either between two reflective surfaces extending perpendicular to the direction of propagation of the radiation, or differently, for example in the laser with reduced feedback coupling which is described in Applied Physics Letters, Vol. 18, February 15, 1971, pp. 152-T54.
  • the number of transversal modes in which the emanating beam oscillates can be restricted by making the strip-shaped electrode configuration very narrow.
  • the number of transversal modes can even be restricted to one.
  • the use of very narrow electrode structures has for its disadvantage that the current density can easily become so high that damage to the laser structure occurs.
  • several modes of oscillation may nevertheless occur in the case of currents which are considerably above the threshold current.
  • the radiation is restricted to one transversal mode by making the active layer in a double hetero junction laser having a strip-shaped electrode not homogeneous in thickness but providing therein below the strip-shaped electrode a strip-shaped zone having a larger thickness than the remaining part of the active layer.
  • a disadvantage of this known device is that technologically it is particularly difficult to provide the required very small and very narrow thickening in the active layer without thereby adversely influencing the operation of the laser/intensifier.
  • the required processes etching and growing after the etching step
  • the thin active layer within which the intensification mechanism of the device occurs is the most vulnerable part of the device. Therefore, after providing the active layer said layer should be subjected to the least possible number of further treatments.
  • the thicker central region of the active layer underlying the strip- shaped electrode will pass less current and will hence become active less rapidly. This has a detrimental influence on the stability of operation and on the intensification.
  • the threshold current is reached first in the thinner parts of the strip-shaped region of the active layer underlying the electrode on either side of the thickening.
  • in principle first a higher mode and only then the fundamental mode can be impulsed upon switching on the device. And finally transversal higher-order modes in a direction perpendicular to the active layer can more easily occur in the thicker region of the active layer.
  • One of the objects of the invention is to provide a semiconductor device for generating or intensifying coherent radiation with strip-shaped electrode geometry, in which the emanating beam oscillates only in the fundamental transversal mode also at current values above the threshold current, which device moreover can be manufactured with a greater reproducibility than known devices.
  • the invention is based inter alia on the recognition that wave guidance below the strip-shaped electrode can be obtained when an active layer is used which has substantially the same thickness and preferably the same doping everywhere, by means of measures which relate only to the construction and composition of a passive layer.
  • a semiconductor device of the kind described in the preamble is characterized in that the active layer has substantially the same thickness everywhere, that at least the first passive layer comprises a first portion having a refractive index n 1 and a second portion having a refractive index n 2 different from n 1 for the said radiation, said second portion being of the same semiconductor material and having the same conductivity type as the first portion, the active layer adjoining said first portion at least within said strip-shaped zone, and that the condition is satisfied wherein d 1 is the thickness of the first portion from the active layer to the second portion within the strip-shaped zone, and d 2 is the thickness of the first portion in the region of the first passive layer adjoining the strip-shaped zone.
  • n 1 - n 2 (d 1 - d 2 )) 0 indicates that either n 1 must be > n 2 and also d 1 must be d 2 or n 1 must be > n 2 and also d 1 must be > d 2 .
  • the strip-shaped zone By making the strip-shaped zone narrower than the strip-shaped electrode structure, the operation of the laser (or intensifier) in the fundamental mode becomes more stable. According to an important preferred embodiment, therefore, the strip-shaped zone has a width less than said strip-shaped region of the active layer. Since the electrode width need not be extremely small, a comparatively larger power can be generated without degradation of the device. Furthermore, the emanating beam in this case has a satisfactorily flat wave front so that the beam is little astigmatic, which makes the optical coupling to, for example, a glass fibre simple.
  • the strip-shaped zone of higher refractive index is provided so as to be slightly asymmetrical with respect to the electrode structure, the occurrence of more than one oscillation mode can be suppressed to a much more considerable extent in the case of a symmetrical structure. Therefore, according to an important preferred embodiment, the strip-shaped zone is provided so as to be symmetrical with respect to the strip-shaped region.
  • the strip-shaped zone can be realised in a number of different manners in the structure of the first passive semiconductor layer.
  • the first passive semiconductor layer in the regions adjoining the strip-shaped zone consists entirely of the portion having the lower refractive index.
  • the desired zone can be formed in a comparatively simple manner technologically by doping a narrow strip-shaped part of said layer.
  • This may be done, for example, by diffusion or by ion implantation, in which a passive layer which consists, for example, of a ternary semiconductor mixed crystal, for example Ga i-x AlxAsp is locally given a slightly different composition having a .higher refractive index by a suitable doping.
  • a passive layer which consists, for example, of a ternary semiconductor mixed crystal, for example Ga i-x AlxAsp is locally given a slightly different composition having a .higher refractive index by a suitable doping.
  • a strip-shaped zone of higher refractive index can simply be formed which extends from the surface of the first passive semiconductor layer remote from the active layer over a part of the thickness of the layer, in which latter case the strip-shaped zone consists entirely of the portion having the higher refractive index.
  • a "buried" strip-shaped zone of higher refractive index can also be obtained in a simple manner in the first passive semiconductor layer which is surrounded, within the passive semiconductor layer,entirely by the portion having the lower refractive index.
  • the active and passive layers need not be flat and in some cases it may be preferred, also in connection with the manufacturing method to be followed, to provide one or more layers so as to be not flat and one or both passive layers to have an inhomogeneous thickness.
  • a preferred embodiment in which the active layer in the strip-shaped zone adjoins the material having the lower refractive index (so n 1 n 2 and d 1 d 2 ) is characterized in that the first passive layer is provided on a substrate which locally has a strip-shaped raised portion, the first passive layer at the area of said raised portion showing a smaller overall thickness than beside the raised portbn.
  • a preferred embodiment in which the active layer in the strip-shaped zone adjoins the material having the higher refractive index (so n 1 > n 2 and d 1 > d 2 ) is characterized in that the first passive layer is provided on a substrate which locally has a strip-shaped depressed portion, the first passive layer at the area of said depressed portion showing a larger overall thickness than beside the depressed portion.
  • strip-shaped electrode structure As regards the strip-shaped electrode structure, several known configurations may be used which may be situated either on one side or on the other side of the active layer, or theoretically on both sides, although this may provide cooling problems.
  • Fig. 1 shows partly as a perspective view and partly as a cross-sectional view a semiconductor device according to the invention for intensifying or generating coherent electromagnetic radiation.
  • the device comprises a semiconductor body 1 having an active semiconductor layer 2 which comprises a p-n junction 3 and is bounded on either side by first and second passive semiconductor layers (4, 11) and 5 both having a lower refractive index for the radiation to be generated or intensified than the active layer 2.
  • One of the passive layers, the layer (4, 11) has a strip-shaped electrode structure.
  • this is a strip-shaped metal layer 7 which is provided on a semiconductor contact layer 7 having the same conductivity type as but a lower resistivity than the passive layer (4, 11).
  • Current can be supplied to a strip-shaped region 8 (situated between the broken lines) of the active layer 2 by the electrode 6 in a direction perpendicular to the layer.
  • the other electrode (9) is situated on a readily conductive substrate 10, on which the passive layer 5 is present, and extends on the whole surface thereof.
  • a suitable voltage between the electrodes 6 and 9 via a current source 20, shown diagrammatically in Fig. 1, current is supplied to the region 8 in a direction substantially perpendicular to the layer 2,namely in the forward direction of the p-n junction 3, which current serves in known manner to generate in the active layer 2 coherent electromagnetic radiation according to the laser principle (if the strip-shaped region 8 is provided in a resonant cavity) or to intensify it (if this is not the case).
  • the first passive layer (4, 11) has a strip-shaped zone (4A, 11) extending in projection entirely within the strip-shaped region 8 and having a different structure than the adjoining parts (4) of the layer as will be described in detail hereinafter.
  • Said strip-shaped zone (4A, 11) has a width which is at most equal to, and in this example is smaller than, that of the strip-shaped region 8.
  • the active layer (2) everywhere has about the same thickness, while at least the first passive layer comprises a first portion (4, 4A) having a refractive index n 1 , and a second portion 11 of the same semiconductor material and the same conductivity type as the first portion and having a refractive index n 2for said radiation which is different from n 1 .
  • the active layer 2 at least within the strip-shaped zone (4A, 11) (and in this example also outside the strip-shaped zone) adjoins the first portion (4, 4A).
  • n 2 n 1
  • the thickness d 1 of the first portion 4A from the active layer 2 to the second portion 11 within the strip-shaped zone (4A, 11) is less than the thickness d 2 of the first portion 4 in the region of the first passive layer which adjoins the strip-shaped zone.
  • the emanating radiation emanates in the direction of the arrow in Fig. 1, and the entering radiation enters in the same direction through the oppositely located end face, the emanating radiation of wavelength 0.9 micron being intensified with respect to the entering radiation of the same wavelength.
  • the passive layer 4 in the regions adjoining the strip-shaped zone consists entirely of the material of lower refractive index
  • the strip-shaped zone of the layer 4 in Fig. 2 consisting entirely of the material of the higher refractive index, in other words the zone 11 extends over the whole thickness of the layer 4.
  • the portion 11 of higher refractive index is surrounded entirely by the portion 4 of lower refractive index.
  • the region 11 also has a higher refractive index than the remainder of the layer (4, 11).
  • the region 11 adjoins the active layer 2; so in these devices it holds that n 1 > n 2 and d 1 > d 2 .
  • the region of lower refractive index adjoins the active layer 2 in the device shown in Fig. 6 where the region of lower refractive index adjoins the active layer 2, it holds on the contrary that n 1 ⁇ n 2 and d 1 ⁇ d 2 .
  • the device according to the invention both as regards relative power intensification and as regards horizontal concentration and relative astigmatism, shows a considerable improvement as compared with devices in which the passive layer 4 is homogeneous in thickness and composition and in which thus the region 11 is lacking, Also for the above-mentioned reasons, the device is technologically better realisable than that described in United States Patent Specification 3,883,821, since the active layer 2 has substantially the same thickness everywhere and mechanical or physical-chemical treatments need not be carried out on or in said layer after the growth thereof.
  • Figs. 7 to 11 show various embodiments for the strip-shaped electrode structure which are all known per se.They may be used in the structure shown in Fig. 1, as shown in the drawing, but also in any other device according to the invention.
  • an electrode layer is provided on the upper side of the device over the whole surface, which layer, however, contacts the semiconductor surface only via a slot-shaped aperture in the insulating layer 12 situated on the surface.
  • a contact layer is provided on the p- conductive passive layer 4 and consists of a strip-shaped part 13 of E -type gallium arsenide and beside it n-type gallium arsenide regions 14, so that in the forward direction current flows only through the p-n junction 3 via the region 13.
  • Fig. 7 shows various embodiments for the strip-shaped electrode structure which are all known per se.They may be used in the structure shown in Fig. 1, as shown in the drawing, but also in any other device according to the invention.
  • an electrode layer is provided on the upper side of the device over the whole surface, which layer
  • a strip-shaped electrode 6 is provided directly on the passive layer 4.
  • the strip-shaped electrode structure is provided in contact with the passive layer 5 by restricting the current to a strip-shaped region by means of the buried p-type GaAs regions 15 between the n-type GaAlAs layer 5 and the n-type GaAs substrate 10.
  • the current is restricted to a strip-shaped region by providing insulating zones 16 (crosswise shading),for example, by a proton bombardment.
  • the first passive layer 4 that is, the passive layer comprising the strip-shaped zone according to the invention, is provided on a substrate 10 which locally has a strip-shaped raised portion 10A, in which the first passive layer 4 at the area of said raised portion shows a smaller overall thickness than beside the raised portion.
  • a substrate 10 which locally has a strip-shaped raised portion 10A, in which the first passive layer 4 at the area of said raised portion shows a smaller overall thickness than beside the raised portion.
  • the electrode 6 again has a width of approximately 9 microns
  • the raised portion 10A has a width of approximately 4 microns and a height of approximately 2 microns
  • the lowermost portion of the passive layer 4 consists of n-type Ga 1-x Al x As having such a composition that its refractive index n 2 is approximately 3.50
  • the uppermost portion of the layer 4 adjoining the active layer 2 consists of n-type Ga 1-y Al y As having such a composition that its refractive index n 1 is approximately 3.40
  • the passive layer 5 also has a refractive index 3.40.
  • the thickness d 1 is approximately 0.4 micron
  • the thickness d 2 at the indicated place is approximately 0.8 micron.
  • the thickness of the active layer 2 (n-type GaAs, refractive index approximately 3.61)is approximately 0.2 micron everywhere, that of the passive layer 5 (p-type Ga 1-x Al y As) is approximately 1.5 microns.
  • An electrode layer 9 is provided on the substrate 10 consisting of n-type GaAs and having a low resistivity and refractive index 3.61.
  • a laser or intensifier structure as shown in Fig. 13 may also be obtained.
  • the first passive layer 4 is provided on a substrate 10 which locally shows a strip-shaped depressed portion 10B in which the layer 4 at the area of said depressed portion shows a larger overall thickness than beside the depressed portion.
  • the depressed portion 10B has a width of approximately 4 microns and a height of approximately 3 microns.
  • the thickness d 1 is approximately 0.25 micron
  • the thickness d 2 is approximately 0.1 micron.
  • the active layer 2 has substantially the same thickness everywhere.
  • the devices shown in Figs. 12 and 13 may be manufactured, for example, by using epitaxial growth methods as described in Journal of Applied Physics, Volume 47, No. 10, October 1976, pp. 4578-4589.
  • the desired structure is obtained both in Fie. 12 and in Fig. 13 by direct epitaxial growth of the successive layers from the liquid phase without it being necessary to carry out further operations after the growth of the layer 4 thereon so as to obtain the desired strip-shaped inhomogeneity.
  • the successive epitaxial growth of semiconductor layers of different compositions is generally known in the technology of the hetero junction lasers and is described in detail in the technical literature on various occasions. In this connection reference may be had to the book by D. Elwell and J.J. Scheel, Crystal Growth from High Temperature Solutions, Academic Press 1975, pp. 433-467, hereby incorporated by reference. So the manufacture of the devices described need not be further entered into.
  • the portions of different refractive indices in the passive layer 4 (Figs. 1 to 11) can be obtained by first growing a layer of homogeneous refractive index and then introducing into a portion of said layer, while using a suitable masking, a material which increases the refractive index (Figs.
  • the refractive index can be increased in p-type Ga Al As by the addition of an acceptor, such as Zn or Ge. This could also be done by increasing the content of gallium. Conversely the refractive index can be reduced by increasing the content of aluminium.
  • the invention is not restricted to the embodiments described.
  • suitable semiconductor materials other than GaAs and Ga 1-x Al x As may alternatively be used.
  • the conductivity type of the active layer is not of essential importance; in the embodiments described the layer 3 may be both n-conductive and p-conductive.
  • a portion of the layer 2 may be n-conductive and a portion may be p-conductive, said portions constituting a p-n junction parallel to the faces of the layer 2.
  • a strip-shaped zone of different construction which in the embodiments described occurs only in the first passive layer 4, may be provided, if desired, both in the first passive layer 4 and in the second passive layer 5.
  • the structures of said two zones need not be the same; for example, a region 11 in the layer 4 of Fig. 2 may be combined with a region 11' according to one of the structures of Figs. 3 to 6 in the layer 5.
  • Fig. 4 serves as an illustration in which an n-type region 11' of higher refractive index than the remainder of the layer 5 is provided in the n-type passive layer 4 and the reference numerals otherwise have the same meaning as in Fig. 7.
  • the strip-shaped zones in the layers 4 and 5 have the same construction and it can be calculated that to an approximation double the effect occurs with respect to the device shown in Fig. 7.
  • the strip-shaped electrode structure may be situated at the side of the layer 4, but alternatively, instead thereof, at the side of the layer 5.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
EP78200074A 1977-07-12 1978-07-03 Halbleiter-Injektionslaser oder-verstärker Expired EP0000412B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7707720A NL7707720A (nl) 1977-07-12 1977-07-12 Halfgeleiderlaser of -versterker.
NL7707720 1977-07-12

Publications (3)

Publication Number Publication Date
EP0000412A2 true EP0000412A2 (de) 1979-01-24
EP0000412A3 EP0000412A3 (en) 1979-02-07
EP0000412B1 EP0000412B1 (de) 1981-03-18

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Application Number Title Priority Date Filing Date
EP78200074A Expired EP0000412B1 (de) 1977-07-12 1978-07-03 Halbleiter-Injektionslaser oder-verstärker

Country Status (7)

Country Link
US (1) US4376307A (de)
EP (1) EP0000412B1 (de)
JP (1) JPS5419688A (de)
CA (1) CA1124375A (de)
DE (1) DE2860540D1 (de)
IT (1) IT1096919B (de)
NL (1) NL7707720A (de)

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FR2495383A1 (fr) * 1980-11-28 1982-06-04 Western Electric Co Diode electroluminescente a superradiance ayant un rendement de couplage eleve avec un guide d'ondes optiques
GB2124024A (en) * 1982-06-10 1984-02-08 Kokusai Denshin Denwa Co Ltd Semiconductor laser and manufacturing method therefor
EP0356189A2 (de) * 1988-08-26 1990-02-28 AT&T Corp. Optischer Halbleiterverstärker mit verkürzter Gewinn-Erholungszeit

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JPS5598884A (en) * 1978-12-30 1980-07-28 Fujitsu Ltd Semiconductor light emitting device
JPS55108789A (en) * 1979-01-18 1980-08-21 Nec Corp Semiconductor laser
JPS55123191A (en) * 1979-03-16 1980-09-22 Fujitsu Ltd Semiconductor light emitting device
JPS5618484A (en) * 1979-07-24 1981-02-21 Nec Corp Manufacture of semiconductor laser
JPS5627989A (en) * 1979-08-14 1981-03-18 Fujitsu Ltd Semiconductor light emitting device
JPS5654083A (en) * 1979-10-05 1981-05-13 Nec Corp Semiconductor laser apparatus
JPS5792885A (en) * 1980-12-01 1982-06-09 Sharp Corp Semiconductor laser element
JPS57153489A (en) * 1981-03-17 1982-09-22 Sharp Corp Manufacture of semiconductor laser element
JPS5956785A (ja) * 1982-09-24 1984-04-02 Sanyo Electric Co Ltd 半導体レ−ザ
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JPS62260120A (ja) * 1986-05-07 1987-11-12 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体外部光変調器
US4772854A (en) * 1986-12-24 1988-09-20 Bell Communications Research, Inc. All optical repeater
JPH0410705Y2 (de) * 1987-06-22 1992-03-17
US5019787A (en) * 1989-10-30 1991-05-28 David Sarnoff Research Center, Inc. Optical amplifier
US5131001A (en) * 1990-12-21 1992-07-14 David Sarnoff Research Center, Inc. Monolithic semiconductor light emitter and amplifier
US5337176A (en) * 1992-03-25 1994-08-09 U. S. Philips Corporation Optical amplifier with improved linearity

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JPS51138393A (en) * 1975-05-26 1976-11-29 Fujitsu Ltd Semiconductor light emission device
US3978428A (en) * 1975-06-23 1976-08-31 Xerox Corporation Buried-heterostructure diode injection laser
JPS609355B2 (ja) * 1975-08-30 1985-03-09 富士通株式会社 半導体発光装置の製法
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5286093A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Striped semiconductor laser
US4099999A (en) * 1977-06-13 1978-07-11 Xerox Corporation Method of making etched-striped substrate planar laser
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2495383A1 (fr) * 1980-11-28 1982-06-04 Western Electric Co Diode electroluminescente a superradiance ayant un rendement de couplage eleve avec un guide d'ondes optiques
GB2124024A (en) * 1982-06-10 1984-02-08 Kokusai Denshin Denwa Co Ltd Semiconductor laser and manufacturing method therefor
EP0356189A2 (de) * 1988-08-26 1990-02-28 AT&T Corp. Optischer Halbleiterverstärker mit verkürzter Gewinn-Erholungszeit
EP0356189A3 (en) * 1988-08-26 1990-10-17 American Telephone And Telegraph Company Semiconductor optical amplifier with shortened gain recovery time

Also Published As

Publication number Publication date
EP0000412B1 (de) 1981-03-18
DE2860540D1 (en) 1981-04-16
NL7707720A (nl) 1979-01-16
US4376307A (en) 1983-03-08
IT1096919B (it) 1985-08-26
IT7825470A0 (it) 1978-07-07
EP0000412A3 (en) 1979-02-07
JPS5419688A (en) 1979-02-14
CA1124375A (en) 1982-05-25
JPS5755309B2 (de) 1982-11-24

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