EA201991410A1 - Энергонезависимая память - Google Patents

Энергонезависимая память

Info

Publication number
EA201991410A1
EA201991410A1 EA201991410A EA201991410A EA201991410A1 EA 201991410 A1 EA201991410 A1 EA 201991410A1 EA 201991410 A EA201991410 A EA 201991410A EA 201991410 A EA201991410 A EA 201991410A EA 201991410 A1 EA201991410 A1 EA 201991410A1
Authority
EA
Eurasian Patent Office
Prior art keywords
layer
type
piezomagnetic
action
deformation
Prior art date
Application number
EA201991410A
Other languages
English (en)
Other versions
EA038296B1 (ru
Inventor
Ян Земен
Андрей Пол Михай
Бин Зоу
Дэвид Болдрин
Евгений Дончев
Original Assignee
АйП2АйПО ИННОВЕЙШЕНЗ ЛИМИТЕД
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by АйП2АйПО ИННОВЕЙШЕНЗ ЛИМИТЕД filed Critical АйП2АйПО ИННОВЕЙШЕНЗ ЛИМИТЕД
Publication of EA201991410A1 publication Critical patent/EA201991410A1/ru
Publication of EA038296B1 publication Critical patent/EA038296B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Static Random-Access Memory (AREA)
  • Magnetically Actuated Valves (AREA)
  • Measuring Magnetic Variables (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)

Abstract

Настоящее изобретение относится к ячейке энергонезависимой памяти, содержащей слой хранения, состоящий из ферромагнитного или ферроэлектрического материала, выполненный с возможностью записи в него данных в виде направления магнитной или электрической поляризации, пьезомагнитный слой, состоящий из антиперовскитного пьезомагнитного материала, выборочно имеющего первый тип воздействия на слой хранения и второй тип воздействия на слой хранения в зависимости от магнитного состояния и деформации в пьезомагнитном слое; и вызывающий деформацию слой для создания деформации в пьезомагнитном слое для переключения тем самым с первого типа воздействия на второй тип воздействия.
EA201991410A 2016-12-16 2017-12-06 Энергонезависимая память EA038296B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1621485.0A GB2557923B (en) 2016-12-16 2016-12-16 Non-volatile memory
PCT/GB2017/053674 WO2018109441A1 (en) 2016-12-16 2017-12-06 Non-volatile memory

Publications (2)

Publication Number Publication Date
EA201991410A1 true EA201991410A1 (ru) 2019-12-30
EA038296B1 EA038296B1 (ru) 2021-08-05

Family

ID=58284420

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201991410A EA038296B1 (ru) 2016-12-16 2017-12-06 Энергонезависимая память

Country Status (15)

Country Link
US (1) US11152562B2 (ru)
EP (1) EP3555887B1 (ru)
JP (1) JP7053657B2 (ru)
KR (1) KR102401537B1 (ru)
CN (1) CN110574112B (ru)
BR (1) BR112019012288B1 (ru)
CA (1) CA3046162A1 (ru)
EA (1) EA038296B1 (ru)
ES (1) ES2829336T3 (ru)
GB (1) GB2557923B (ru)
IL (1) IL267292B2 (ru)
MX (1) MX2019006887A (ru)
PH (1) PH12019501349A1 (ru)
TW (1) TWI773711B (ru)
WO (1) WO2018109441A1 (ru)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2576174B (en) 2018-08-07 2021-06-16 Ip2Ipo Innovations Ltd Memory
US11296224B1 (en) 2021-06-16 2022-04-05 Purdue Research Foundation Non-volatile polarization induced strain coupled 2D FET memory

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* Cited by examiner, † Cited by third party
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JP4568926B2 (ja) * 1999-07-14 2010-10-27 ソニー株式会社 磁気機能素子及び磁気記録装置
JP3312174B2 (ja) 1999-09-24 2002-08-05 東北大学長 高密度磁気固定メモリの書き込み方法及び高密度磁気固定メモリ
US6829157B2 (en) * 2001-12-05 2004-12-07 Korea Institute Of Science And Technology Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
US6835463B2 (en) * 2002-04-18 2004-12-28 Oakland University Magnetoelectric multilayer composites for field conversion
KR100754930B1 (ko) 2004-12-22 2007-09-03 한국과학기술원 전압제어 자화반전 기록방식의 ｍｒａｍ 소자 및 이를이용한 정보의 기록 및 판독 방법
JP4380693B2 (ja) * 2006-12-12 2009-12-09 ソニー株式会社 記憶素子、メモリ
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
KR101219774B1 (ko) 2007-07-20 2013-01-18 삼성전자주식회사 전이금속 산화막을 갖는 반도체소자의 제조방법 및 관련된소자
EP2245631B1 (en) * 2008-01-16 2015-08-05 International Business Machines Corporation Memory cell and memory device
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JP2010145147A (ja) 2008-12-17 2010-07-01 Seiko Epson Corp 磁気センサ素子および磁気センサ
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KR20170058916A (ko) 2014-09-25 2017-05-29 인텔 코포레이션 변형 보조형 스핀 토크 스위칭 스핀 전달 토크 메모리
JP6647590B2 (ja) 2015-04-23 2020-02-14 国立研究開発法人物質・材料研究機構 垂直磁化膜と垂直磁化膜構造並びに磁気抵抗素子および垂直磁気記録媒体
JP6424272B2 (ja) 2015-06-03 2018-11-14 国立研究開発法人科学技術振興機構 磁気抵抗素子および記憶回路
CN105720188A (zh) 2016-03-03 2016-06-29 天津理工大学 一种基于磁电效应的铁电/铁磁复合薄膜的磁电存储元件

Also Published As

Publication number Publication date
MX2019006887A (es) 2019-10-21
EP3555887A1 (en) 2019-10-23
CA3046162A1 (en) 2018-06-21
US20190363247A1 (en) 2019-11-28
BR112019012288B1 (pt) 2024-02-20
GB2557923B (en) 2020-10-14
IL267292A (en) 2019-08-29
CN110574112B (zh) 2023-05-02
EA038296B1 (ru) 2021-08-05
GB201621485D0 (en) 2017-02-01
TWI773711B (zh) 2022-08-11
US11152562B2 (en) 2021-10-19
IL267292B1 (en) 2023-03-01
PH12019501349A1 (en) 2019-12-11
GB2557923A (en) 2018-07-04
KR102401537B1 (ko) 2022-05-25
JP7053657B2 (ja) 2022-04-12
TW201836075A (zh) 2018-10-01
WO2018109441A1 (en) 2018-06-21
JP2020516077A (ja) 2020-05-28
IL267292B2 (en) 2023-07-01
BR112019012288A2 (pt) 2019-11-19
CN110574112A (zh) 2019-12-13
ES2829336T3 (es) 2021-05-31
EP3555887B1 (en) 2020-10-07
KR20190107023A (ko) 2019-09-18
GB2557923A8 (en) 2018-09-05

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