MX2019006887A - Memoria no volatil. - Google Patents

Memoria no volatil.

Info

Publication number
MX2019006887A
MX2019006887A MX2019006887A MX2019006887A MX2019006887A MX 2019006887 A MX2019006887 A MX 2019006887A MX 2019006887 A MX2019006887 A MX 2019006887A MX 2019006887 A MX2019006887 A MX 2019006887A MX 2019006887 A MX2019006887 A MX 2019006887A
Authority
MX
Mexico
Prior art keywords
layer
effect
type
piezomagnetic
strain
Prior art date
Application number
MX2019006887A
Other languages
English (en)
Inventor
Zemen Jan
Paul Mihai Andrei
Zou Bin
Boldrin David
Donchev Evgeniy
Original Assignee
Ip2Ipo Innovatios Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ip2Ipo Innovatios Ltd filed Critical Ip2Ipo Innovatios Ltd
Publication of MX2019006887A publication Critical patent/MX2019006887A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Static Random-Access Memory (AREA)
  • Magnetically Actuated Valves (AREA)
  • Measuring Magnetic Variables (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)

Abstract

Una celda de memoria no volátil que comprende: una capa de almacenamiento comprendida de un material ferromagnético o ferroeléctrico en la cual los datos pueden ser grabados como una dirección de la polarización magnética o eléctrica; una capa piezomagnética comprendida de un material piezomagnético de antiperovskita que tiene, de manera selectiva, un primer tipo de efecto en la capa de almacenamiento y un segundo tipo de efecto en la capa de almacenamiento dependiendo del estado magnético y la deformación en la capa piezomagnética; y una capa de inducción de deformación que induce una deformación en la capa piezomagnética con lo cual se cambia del primer tipo de efecto al segundo tipo de efecto.
MX2019006887A 2016-12-16 2017-12-06 Memoria no volatil. MX2019006887A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1621485.0A GB2557923B (en) 2016-12-16 2016-12-16 Non-volatile memory
PCT/GB2017/053674 WO2018109441A1 (en) 2016-12-16 2017-12-06 Non-volatile memory

Publications (1)

Publication Number Publication Date
MX2019006887A true MX2019006887A (es) 2019-10-21

Family

ID=58284420

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2019006887A MX2019006887A (es) 2016-12-16 2017-12-06 Memoria no volatil.

Country Status (15)

Country Link
US (1) US11152562B2 (es)
EP (1) EP3555887B1 (es)
JP (1) JP7053657B2 (es)
KR (1) KR102401537B1 (es)
CN (1) CN110574112B (es)
BR (1) BR112019012288B1 (es)
CA (1) CA3046162A1 (es)
EA (1) EA038296B1 (es)
ES (1) ES2829336T3 (es)
GB (1) GB2557923B (es)
IL (1) IL267292B2 (es)
MX (1) MX2019006887A (es)
PH (1) PH12019501349A1 (es)
TW (1) TWI773711B (es)
WO (1) WO2018109441A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2576174B (en) 2018-08-07 2021-06-16 Ip2Ipo Innovations Ltd Memory
US11296224B1 (en) 2021-06-16 2022-04-05 Purdue Research Foundation Non-volatile polarization induced strain coupled 2D FET memory

Family Cites Families (24)

* Cited by examiner, † Cited by third party
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WO2000060369A1 (en) * 1999-04-05 2000-10-12 Spinix Corporation Passive solid-state magnetic field sensors and applications therefor
JP4568926B2 (ja) * 1999-07-14 2010-10-27 ソニー株式会社 磁気機能素子及び磁気記録装置
JP3312174B2 (ja) 1999-09-24 2002-08-05 東北大学長 高密度磁気固定メモリの書き込み方法及び高密度磁気固定メモリ
US6829157B2 (en) * 2001-12-05 2004-12-07 Korea Institute Of Science And Technology Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
US6835463B2 (en) * 2002-04-18 2004-12-28 Oakland University Magnetoelectric multilayer composites for field conversion
KR100754930B1 (ko) 2004-12-22 2007-09-03 한국과학기술원 전압제어 자화반전 기록방식의 ｍｒａｍ 소자 및 이를이용한 정보의 기록 및 판독 방법
JP4380693B2 (ja) * 2006-12-12 2009-12-09 ソニー株式会社 記憶素子、メモリ
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
KR101219774B1 (ko) 2007-07-20 2013-01-18 삼성전자주식회사 전이금속 산화막을 갖는 반도체소자의 제조방법 및 관련된소자
EP2245631B1 (en) * 2008-01-16 2015-08-05 International Business Machines Corporation Memory cell and memory device
US8102700B2 (en) 2008-09-30 2012-01-24 Micron Technology, Inc. Unidirectional spin torque transfer magnetic memory cell structure
FR2938369B1 (fr) 2008-11-12 2010-12-24 Commissariat Energie Atomique Procede de fabrication d'une couche d'un materiau antiferromagnetique a structures magnetiques controlees
JP2010145147A (ja) 2008-12-17 2010-07-01 Seiko Epson Corp 磁気センサ素子および磁気センサ
US8129043B2 (en) * 2009-04-14 2012-03-06 Hitachi Global Storage Technologies Netherlands B.V. System, method and apparatus for strain-assisted magnetic recording for controlling switching field and tightening switching field distribution in bit patterned media
JP2011003892A (ja) 2009-06-18 2011-01-06 Northern Lights Semiconductor Corp Ｄｒａｍセル
FR2961632B1 (fr) 2010-06-18 2013-04-19 Centre Nat Rech Scient Memoire magnetoelectrique
JP2017533572A (ja) * 2011-03-30 2017-11-09 アンバチュア インコーポレイテッドＡＭＢＡＴＵＲＥ Ｉｎｃ． 非常に低い抵抗材料で形成された、電気的デバイス、機械的デバイス、コンピュータデバイス、および／または、他のデバイス
US8921962B2 (en) * 2011-04-19 2014-12-30 Virginia Commonwealth University Planar multiferroic/magnetostrictive nanostructures as memory elements, two-stage logic gates and four-state logic elements for information processing
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
CN104900799A (zh) 2014-03-04 2015-09-09 中国科学院宁波材料技术与工程研究所 交换偏置场可调控的结构单元、其制备方法及调控方法
KR20170058916A (ko) 2014-09-25 2017-05-29 인텔 코포레이션 변형 보조형 스핀 토크 스위칭 스핀 전달 토크 메모리
JP6647590B2 (ja) 2015-04-23 2020-02-14 国立研究開発法人物質・材料研究機構 垂直磁化膜と垂直磁化膜構造並びに磁気抵抗素子および垂直磁気記録媒体
JP6424272B2 (ja) 2015-06-03 2018-11-14 国立研究開発法人科学技術振興機構 磁気抵抗素子および記憶回路
CN105720188A (zh) 2016-03-03 2016-06-29 天津理工大学 一种基于磁电效应的铁电/铁磁复合薄膜的磁电存储元件

Also Published As

Publication number Publication date
EP3555887A1 (en) 2019-10-23
CA3046162A1 (en) 2018-06-21
US20190363247A1 (en) 2019-11-28
BR112019012288B1 (pt) 2024-02-20
GB2557923B (en) 2020-10-14
IL267292A (en) 2019-08-29
CN110574112B (zh) 2023-05-02
EA038296B1 (ru) 2021-08-05
GB201621485D0 (en) 2017-02-01
TWI773711B (zh) 2022-08-11
US11152562B2 (en) 2021-10-19
IL267292B1 (en) 2023-03-01
PH12019501349A1 (en) 2019-12-11
GB2557923A (en) 2018-07-04
KR102401537B1 (ko) 2022-05-25
JP7053657B2 (ja) 2022-04-12
TW201836075A (zh) 2018-10-01
WO2018109441A1 (en) 2018-06-21
JP2020516077A (ja) 2020-05-28
IL267292B2 (en) 2023-07-01
EA201991410A1 (ru) 2019-12-30
BR112019012288A2 (pt) 2019-11-19
CN110574112A (zh) 2019-12-13
ES2829336T3 (es) 2021-05-31
EP3555887B1 (en) 2020-10-07
KR20190107023A (ko) 2019-09-18
GB2557923A8 (en) 2018-09-05

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