EA200100409A1 - Фотодатчик и система фотодатчиков - Google Patents

Фотодатчик и система фотодатчиков

Info

Publication number
EA200100409A1
EA200100409A1 EA200100409A EA200100409A EA200100409A1 EA 200100409 A1 EA200100409 A1 EA 200100409A1 EA 200100409 A EA200100409 A EA 200100409A EA 200100409 A EA200100409 A EA 200100409A EA 200100409 A1 EA200100409 A1 EA 200100409A1
Authority
EA
Eurasian Patent Office
Prior art keywords
photo
sensors
sensor
carrier generating
incident
Prior art date
Application number
EA200100409A
Other languages
English (en)
Other versions
EA003343B1 (ru
Inventor
Казухиро Сасаки
Макото Сасаки
Ясуо Косизука
Original Assignee
Касио Компьютер Ко., Лтд.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000107468A external-priority patent/JP4154555B2/ja
Priority claimed from JP2000122157A external-priority patent/JP3951088B2/ja
Priority claimed from JP2000163303A external-priority patent/JP3674942B2/ja
Application filed by Касио Компьютер Ко., Лтд. filed Critical Касио Компьютер Ко., Лтд.
Publication of EA200100409A1 publication Critical patent/EA200100409A1/ru
Publication of EA003343B1 publication Critical patent/EA003343B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Air Bags (AREA)
  • Prostheses (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Burglar Alarm Systems (AREA)

Abstract

Предлагается матрица фотодатчиков с одним или несколькими полупроводниковыми слоями, имеющими участки формирования носителей за счет возбуждающего света, при этом положения участков формирования носителей могут устанавливаться произвольно, чтобы выравнивать баланс света, падающего в направлении двумерного перемещения, что обеспечивает восприятие с меньшим искажением.Международная заявка была опубликована вместе с отчетом о международном поиске.
EA200100409A 1999-08-02 2000-07-28 Фотодатчик и система фотодатчиков EA003343B1 (ru)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP21831699 1999-08-02
JP2000107468A JP4154555B2 (ja) 2000-04-10 2000-04-10 フォトセンサアレイ及び２次元画像の読取装置
JP2000122157A JP3951088B2 (ja) 2000-04-24 2000-04-24 フォトセンサアレイおよび２次元画像の読取装置
JP2000163303A JP3674942B2 (ja) 1999-08-02 2000-05-31 光電変換素子、フォトセンサアレイおよび２次元画像の読取装置
PCT/JP2000/005104 WO2001009960A1 (en) 1999-08-02 2000-07-28 Photosensor and photosensor system

Publications (2)

Publication Number Publication Date
EA200100409A1 true EA200100409A1 (ru) 2001-10-22
EA003343B1 EA003343B1 (ru) 2003-04-24

Family

ID=27476860

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200100409A EA003343B1 (ru) 1999-08-02 2000-07-28 Фотодатчик и система фотодатчиков

Country Status (13)

Country Link
US (1) US6670595B1 (ru)
EP (1) EP1118126B1 (ru)
KR (1) KR20010075560A (ru)
CN (1) CN1316636C (ru)
AT (1) ATE424043T1 (ru)
AU (1) AU756447B2 (ru)
CA (1) CA2346032C (ru)
DE (1) DE60041627D1 (ru)
EA (1) EA003343B1 (ru)
HK (1) HK1041366B (ru)
NO (1) NO20011640L (ru)
TW (1) TW465105B (ru)
WO (1) WO2001009960A1 (ru)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382817B1 (ko) * 1999-01-20 2003-05-09 엘지.필립스 엘시디 주식회사 생체감지패턴 및 이를 이용한 박막트랜지스터형 광센서
US6765187B2 (en) * 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
JP4154874B2 (ja) * 2001-07-30 2008-09-24 カシオ計算機株式会社 指紋読取装置および指紋読取方法
TWI243339B (en) * 2002-03-19 2005-11-11 Casio Computer Co Ltd Image reading apparatus and drive control method
JP5157161B2 (ja) * 2006-12-27 2013-03-06 カシオ計算機株式会社 フォトセンサ
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
AT505688A1 (de) * 2007-09-13 2009-03-15 Nanoident Technologies Ag Sensormatrix aus halbleiterbauteilen
TWI354823B (en) 2007-09-17 2011-12-21 Au Optronics Corp Display device, manufacturing method thereof, cont
JP2009164543A (ja) * 2007-12-11 2009-07-23 Sony Corp 光センサ及び表示装置
KR101322137B1 (ko) * 2008-06-24 2013-10-25 엘지디스플레이 주식회사 액정표시장치
KR102378956B1 (ko) 2008-10-24 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101343293B1 (ko) * 2010-04-30 2013-12-18 샤프 가부시키가이샤 회로 기판 및 표시 장치
KR20120075971A (ko) * 2010-12-29 2012-07-09 삼성모바일디스플레이주식회사 적층형 포토다이오드 및 그 제조방법
MX360883B (es) * 2013-12-10 2018-11-21 Illumina Inc Biosensores para análisis biológico o químico y métodos para fabricarlos.
CN111276546B (zh) * 2020-02-20 2022-07-29 武汉华星光电技术有限公司 显示面板及其制作方法
CN115411135A (zh) * 2021-05-13 2022-11-29 北京大学深圳研究生院 一种光电探测晶体管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU862753A1 (ru) * 1980-04-03 1996-05-10 Запорожский индустриальный институт Фототранзистор
US4744637A (en) * 1984-10-05 1988-05-17 Canon Kabushiki Kaisha Liquid crystal device with a protective layer of a particular coefficient of expansion
US5200634A (en) * 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
ATE135496T1 (de) * 1990-03-27 1996-03-15 Canon Kk Dünnschicht-halbleiterbauelement
US5075237A (en) * 1990-07-26 1991-12-24 Industrial Technology Research Institute Process of making a high photosensitive depletion-gate thin film transistor
JPH04299578A (ja) * 1991-03-27 1992-10-22 Canon Inc 光電変換素子及び薄膜半導体装置
RU2045110C1 (ru) * 1992-03-27 1995-09-27 Валерий Александрович Болдырев Фотоприемник с ячеистой структурой
JP3019632B2 (ja) * 1992-10-16 2000-03-13 カシオ計算機株式会社 フォトセンサシステム及びその駆動方法
US5461419A (en) * 1992-10-16 1995-10-24 Casio Computer Co., Ltd. Photoelectric conversion system
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
WO1994026061A1 (en) 1993-04-29 1994-11-10 Michael Friedland Hands free video camera system
JPH08102547A (ja) * 1994-09-30 1996-04-16 Casio Comput Co Ltd 光電変換装置及びその製造方法
RU2114490C1 (ru) * 1995-08-08 1998-06-27 Винницкий государственный технический университет Полупроводниковый оптический датчик
JPH0980470A (ja) * 1995-09-14 1997-03-28 Hitachi Electron Eng Co Ltd Ｔｆｔ基板の配線欠陥修復方法
JP3704406B2 (ja) * 1996-10-30 2005-10-12 株式会社東芝 固体撮像装置
US6310683B1 (en) * 1997-08-05 2001-10-30 Casio Computer Co., Ltd. Apparatus for reading fingerprint

Also Published As

Publication number Publication date
NO20011640D0 (no) 2001-03-30
AU756447B2 (en) 2003-01-16
CA2346032A1 (en) 2001-02-08
CN1319257A (zh) 2001-10-24
WO2001009960A1 (en) 2001-02-08
CN1316636C (zh) 2007-05-16
EA003343B1 (ru) 2003-04-24
EP1118126A1 (en) 2001-07-25
CA2346032C (en) 2004-03-23
NO20011640L (no) 2001-06-01
EP1118126B1 (en) 2009-02-25
DE60041627D1 (en) 2009-04-09
ATE424043T1 (de) 2009-03-15
KR20010075560A (ko) 2001-08-09
HK1041366A1 (en) 2002-07-05
TW465105B (en) 2001-11-21
AU6182800A (en) 2001-02-19
US6670595B1 (en) 2003-12-30
HK1041366B (zh) 2009-06-19

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Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM

MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): RU