HK1041366B - 光傳感器及系統 - Google Patents
光傳感器及系統Info
- Publication number
- HK1041366B HK1041366B HK02100622.4A HK02100622A HK1041366B HK 1041366 B HK1041366 B HK 1041366B HK 02100622 A HK02100622 A HK 02100622A HK 1041366 B HK1041366 B HK 1041366B
- Authority
- HK
- Hong Kong
- Prior art keywords
- photosensor
- carrier generating
- incident
- generating regions
- equalize
- Prior art date
Links
- 239000000969 carrier Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14678—Contact-type imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Geophysics And Detection Of Objects (AREA)
- Air Bags (AREA)
- Prostheses (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Burglar Alarm Systems (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
- Measurement Of Current Or Voltage (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21831699 | 1999-08-02 | ||
JP2000107468A JP4154555B2 (ja) | 2000-04-10 | 2000-04-10 | フォトセンサアレイ及び2次元画像の読取装置 |
JP2000122157A JP3951088B2 (ja) | 2000-04-24 | 2000-04-24 | フォトセンサアレイおよび2次元画像の読取装置 |
JP2000163303A JP3674942B2 (ja) | 1999-08-02 | 2000-05-31 | 光電変換素子、フォトセンサアレイおよび2次元画像の読取装置 |
PCT/JP2000/005104 WO2001009960A1 (en) | 1999-08-02 | 2000-07-28 | Photosensor and photosensor system |
Publications (2)
Publication Number | Publication Date |
---|---|
HK1041366A1 HK1041366A1 (en) | 2002-07-05 |
HK1041366B true HK1041366B (zh) | 2009-06-19 |
Family
ID=27476860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK02100622.4A HK1041366B (zh) | 1999-08-02 | 2002-01-25 | 光傳感器及系統 |
Country Status (13)
Country | Link |
---|---|
US (1) | US6670595B1 (zh) |
EP (1) | EP1118126B1 (zh) |
KR (1) | KR20010075560A (zh) |
CN (1) | CN1316636C (zh) |
AT (1) | ATE424043T1 (zh) |
AU (1) | AU756447B2 (zh) |
CA (1) | CA2346032C (zh) |
DE (1) | DE60041627D1 (zh) |
EA (1) | EA003343B1 (zh) |
HK (1) | HK1041366B (zh) |
NO (1) | NO20011640L (zh) |
TW (1) | TW465105B (zh) |
WO (1) | WO2001009960A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382817B1 (ko) * | 1999-01-20 | 2003-05-09 | 엘지.필립스 엘시디 주식회사 | 생체감지패턴 및 이를 이용한 박막트랜지스터형 광센서 |
US6765187B2 (en) * | 2001-06-27 | 2004-07-20 | Canon Kabushiki Kaisha | Imaging apparatus |
JP4154874B2 (ja) * | 2001-07-30 | 2008-09-24 | カシオ計算機株式会社 | 指紋読取装置および指紋読取方法 |
TWI243339B (en) * | 2002-03-19 | 2005-11-11 | Casio Computer Co Ltd | Image reading apparatus and drive control method |
JP5157161B2 (ja) * | 2006-12-27 | 2013-03-06 | カシオ計算機株式会社 | フォトセンサ |
US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
AT505688A1 (de) * | 2007-09-13 | 2009-03-15 | Nanoident Technologies Ag | Sensormatrix aus halbleiterbauteilen |
TWI354823B (en) | 2007-09-17 | 2011-12-21 | Au Optronics Corp | Display device, manufacturing method thereof, cont |
JP2009164543A (ja) * | 2007-12-11 | 2009-07-23 | Sony Corp | 光センサ及び表示装置 |
KR101322137B1 (ko) * | 2008-06-24 | 2013-10-25 | 엘지디스플레이 주식회사 | 액정표시장치 |
CN102509736B (zh) | 2008-10-24 | 2015-08-19 | 株式会社半导体能源研究所 | 半导体器件和用于制造该半导体器件的方法 |
KR101343293B1 (ko) * | 2010-04-30 | 2013-12-18 | 샤프 가부시키가이샤 | 회로 기판 및 표시 장치 |
KR20120075971A (ko) * | 2010-12-29 | 2012-07-09 | 삼성모바일디스플레이주식회사 | 적층형 포토다이오드 및 그 제조방법 |
US10254225B2 (en) * | 2013-12-10 | 2019-04-09 | Illumina, Inc. | Biosensors for biological or chemical analysis and methods of manufacturing the same |
CN111276546B (zh) * | 2020-02-20 | 2022-07-29 | 武汉华星光电技术有限公司 | 显示面板及其制作方法 |
CN113421942B (zh) * | 2021-05-13 | 2022-11-29 | 北京大学深圳研究生院 | 光电探测晶体管及其制造方法及相应的光电探测方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU862753A1 (ru) * | 1980-04-03 | 1996-05-10 | Запорожский индустриальный институт | Фототранзистор |
US4744637A (en) * | 1984-10-05 | 1988-05-17 | Canon Kabushiki Kaisha | Liquid crystal device with a protective layer of a particular coefficient of expansion |
US5200634A (en) * | 1988-09-30 | 1993-04-06 | Hitachi, Ltd. | Thin film phototransistor and photosensor array using the same |
ATE135496T1 (de) * | 1990-03-27 | 1996-03-15 | Canon Kk | Dünnschicht-halbleiterbauelement |
US5075237A (en) * | 1990-07-26 | 1991-12-24 | Industrial Technology Research Institute | Process of making a high photosensitive depletion-gate thin film transistor |
JPH04299578A (ja) * | 1991-03-27 | 1992-10-22 | Canon Inc | 光電変換素子及び薄膜半導体装置 |
RU2045110C1 (ru) * | 1992-03-27 | 1995-09-27 | Валерий Александрович Болдырев | Фотоприемник с ячеистой структурой |
JP3019632B2 (ja) * | 1992-10-16 | 2000-03-13 | カシオ計算機株式会社 | フォトセンサシステム及びその駆動方法 |
US5461419A (en) * | 1992-10-16 | 1995-10-24 | Casio Computer Co., Ltd. | Photoelectric conversion system |
US5604360A (en) * | 1992-12-04 | 1997-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor |
WO1994026061A1 (en) | 1993-04-29 | 1994-11-10 | Michael Friedland | Hands free video camera system |
JPH08102547A (ja) * | 1994-09-30 | 1996-04-16 | Casio Comput Co Ltd | 光電変換装置及びその製造方法 |
RU2114490C1 (ru) * | 1995-08-08 | 1998-06-27 | Винницкий государственный технический университет | Полупроводниковый оптический датчик |
JPH0980470A (ja) * | 1995-09-14 | 1997-03-28 | Hitachi Electron Eng Co Ltd | Tft基板の配線欠陥修復方法 |
JP3704406B2 (ja) * | 1996-10-30 | 2005-10-12 | 株式会社東芝 | 固体撮像装置 |
US6310683B1 (en) * | 1997-08-05 | 2001-10-30 | Casio Computer Co., Ltd. | Apparatus for reading fingerprint |
-
2000
- 2000-07-28 EP EP00948313A patent/EP1118126B1/en not_active Expired - Lifetime
- 2000-07-28 EA EA200100409A patent/EA003343B1/ru not_active IP Right Cessation
- 2000-07-28 DE DE60041627T patent/DE60041627D1/de not_active Expired - Lifetime
- 2000-07-28 KR KR1020017004227A patent/KR20010075560A/ko active Search and Examination
- 2000-07-28 AU AU61828/00A patent/AU756447B2/en not_active Ceased
- 2000-07-28 CA CA002346032A patent/CA2346032C/en not_active Expired - Fee Related
- 2000-07-28 WO PCT/JP2000/005104 patent/WO2001009960A1/en not_active Application Discontinuation
- 2000-07-28 CN CNB008015880A patent/CN1316636C/zh not_active Expired - Fee Related
- 2000-07-28 AT AT00948313T patent/ATE424043T1/de not_active IP Right Cessation
- 2000-07-31 US US09/630,242 patent/US6670595B1/en not_active Expired - Lifetime
- 2000-08-01 TW TW089115401A patent/TW465105B/zh not_active IP Right Cessation
-
2001
- 2001-03-30 NO NO20011640A patent/NO20011640L/no not_active Application Discontinuation
-
2002
- 2002-01-25 HK HK02100622.4A patent/HK1041366B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1316636C (zh) | 2007-05-16 |
DE60041627D1 (en) | 2009-04-09 |
EA003343B1 (ru) | 2003-04-24 |
EP1118126A1 (en) | 2001-07-25 |
AU6182800A (en) | 2001-02-19 |
ATE424043T1 (de) | 2009-03-15 |
AU756447B2 (en) | 2003-01-16 |
CA2346032A1 (en) | 2001-02-08 |
EP1118126B1 (en) | 2009-02-25 |
HK1041366A1 (en) | 2002-07-05 |
KR20010075560A (ko) | 2001-08-09 |
US6670595B1 (en) | 2003-12-30 |
NO20011640D0 (no) | 2001-03-30 |
CA2346032C (en) | 2004-03-23 |
NO20011640L (no) | 2001-06-01 |
EA200100409A1 (ru) | 2001-10-22 |
TW465105B (en) | 2001-11-21 |
CN1319257A (zh) | 2001-10-24 |
WO2001009960A1 (en) | 2001-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20160728 |