MX2020013788A - Fotodetector integrado con deposito de almacenamiento de carga con tiempo de deteccion variado. - Google Patents

Fotodetector integrado con deposito de almacenamiento de carga con tiempo de deteccion variado.

Info

Publication number
MX2020013788A
MX2020013788A MX2020013788A MX2020013788A MX2020013788A MX 2020013788 A MX2020013788 A MX 2020013788A MX 2020013788 A MX2020013788 A MX 2020013788A MX 2020013788 A MX2020013788 A MX 2020013788A MX 2020013788 A MX2020013788 A MX 2020013788A
Authority
MX
Mexico
Prior art keywords
charge storage
storage bin
detection time
integrated photodetector
charge carriers
Prior art date
Application number
MX2020013788A
Other languages
English (en)
Inventor
Benjamin Cipriany
Keith G Fife
Todd Rearick
Joseph D Clark
Tom Thurston
Original Assignee
Quantum Si Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantum Si Inc filed Critical Quantum Si Inc
Publication of MX2020013788A publication Critical patent/MX2020013788A/es

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6408—Fluorescence; Phosphorescence with measurement of decay time, time resolved fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0012—Biomedical image inspection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/448—Array [CCD]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G01N21/6458—Fluorescence microscopy
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10028—Range image; Depth image; 3D point clouds
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10064—Fluorescence image
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30204—Marker
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Abstract

Un circuito integrado incluye una región de fotodetección configurada para recibir fotones incidentes; la región de fotodetección está configurada para producir una pluralidad de portadores de carga en respuesta a los fotones incidentes; el circuito integrado incluye una región de almacenamiento de portador de carga; el circuito integrado también incluye una estructura de segregación de portador de carga configurada para dirigir selectivamente los portadores de carga de la pluralidad de portadores de carga directamente a la por lo menos una región de almacenamiento de portador de carga con base en los tiempos en los que se producen los portadores de carga.
MX2020013788A 2018-06-22 2019-06-20 Fotodetector integrado con deposito de almacenamiento de carga con tiempo de deteccion variado. MX2020013788A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862688669P 2018-06-22 2018-06-22
PCT/US2019/038105 WO2019246328A1 (en) 2018-06-22 2019-06-20 Integrated photodetector with charge storage bin of varied detection time

Publications (1)

Publication Number Publication Date
MX2020013788A true MX2020013788A (es) 2021-03-02

Family

ID=67211895

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2020013788A MX2020013788A (es) 2018-06-22 2019-06-20 Fotodetector integrado con deposito de almacenamiento de carga con tiempo de deteccion variado.

Country Status (11)

Country Link
US (2) US11391626B2 (es)
EP (1) EP3811610A1 (es)
JP (1) JP7460555B2 (es)
KR (1) KR20210022688A (es)
CN (1) CN112534803A (es)
AU (1) AU2019288394A1 (es)
BR (1) BR112020024790A2 (es)
CA (1) CA3108295A1 (es)
MX (1) MX2020013788A (es)
TW (1) TW202002259A (es)
WO (1) WO2019246328A1 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016022998A2 (en) 2014-08-08 2016-02-11 Quantum-Si Incorporated Integrated device for temporal binning of received photons
JP2019512090A (ja) 2016-02-17 2019-05-09 テッセラクト ヘルス インコーポレイテッドＴｅｓｓｅｒａｃｔ Ｈｅａｌｔｈ，Ｉｎｃ． 寿命イメージングおよび検出用途のためのセンサおよびデバイス
MX2019007530A (es) 2016-12-22 2019-08-16 Quantum Si Inc Fotodetector integrado con agrupamiento de pixeles directo.
WO2020264331A1 (en) 2019-06-28 2020-12-30 Quantum-Si Incorporated Optical and electrical secondary path rejection
AU2021208557A1 (en) 2020-01-14 2022-09-01 Quantum-Si Incorporated Sensor for lifetime plus spectral characterization
US11869917B2 (en) 2020-01-14 2024-01-09 Quantum-Si Incorporated Integrated sensor for lifetime characterization
TW202147591A (zh) 2020-03-02 2021-12-16 美商寬騰矽公司 用於多維信號分析之整合感應器
US11573180B2 (en) 2020-04-08 2023-02-07 Quantum-Si Incorporated Integrated sensor with reduced skew
AU2021366690A1 (en) * 2020-10-22 2023-06-08 Quantum-Si Incorporated Integrated circuit with sequentially-coupled charge storage and associated techniques

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