DK74689D0 - Fremgangsmaade til digelfri zonesmeltning af halvlederstaenger samt induktionsvarmespole til anvendelse ved fremgangsmaaden - Google Patents

Fremgangsmaade til digelfri zonesmeltning af halvlederstaenger samt induktionsvarmespole til anvendelse ved fremgangsmaaden

Info

Publication number
DK74689D0
DK74689D0 DK074689A DK74689A DK74689D0 DK 74689 D0 DK74689 D0 DK 74689D0 DK 074689 A DK074689 A DK 074689A DK 74689 A DK74689 A DK 74689A DK 74689 D0 DK74689 D0 DK 74689D0
Authority
DK
Denmark
Prior art keywords
procedure
digel
stands
semiconductor
induction heating
Prior art date
Application number
DK074689A
Other languages
English (en)
Other versions
DK169355B1 (da
DK74689A (da
Inventor
Wilfried Von Ammon
Wolfgang Hensel
Heinz Klinger
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of DK74689D0 publication Critical patent/DK74689D0/da
Publication of DK74689A publication Critical patent/DK74689A/da
Application granted granted Critical
Publication of DK169355B1 publication Critical patent/DK169355B1/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK074689A 1988-02-18 1989-02-17 Fremgangsmåde til digelfri zonesmeltning af halvlederstænger samt induktionsvarmespole til udførelse af fremgangsmåden DK169355B1 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3805118 1988-02-18
DE3805118A DE3805118A1 (de) 1988-02-18 1988-02-18 Verfahren zum tiegelfreien zonenziehen von halbleiterstaeben und induktionsheizspule zu seiner durchfuehrung

Publications (3)

Publication Number Publication Date
DK74689D0 true DK74689D0 (da) 1989-02-17
DK74689A DK74689A (da) 1989-08-19
DK169355B1 DK169355B1 (da) 1994-10-10

Family

ID=6347687

Family Applications (1)

Application Number Title Priority Date Filing Date
DK074689A DK169355B1 (da) 1988-02-18 1989-02-17 Fremgangsmåde til digelfri zonesmeltning af halvlederstænger samt induktionsvarmespole til udførelse af fremgangsmåden

Country Status (4)

Country Link
US (1) US4851628A (da)
JP (1) JPH062636B2 (da)
DE (1) DE3805118A1 (da)
DK (1) DK169355B1 (da)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0699218B2 (ja) * 1989-04-26 1994-12-07 信越半導体株式会社 単結晶育成用コイル
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
JP2002249393A (ja) * 2001-02-15 2002-09-06 Komatsu Electronic Metals Co Ltd Ｆｚ法半導体単結晶成長方法
DE10137857B4 (de) * 2001-08-02 2006-11-16 Siltronic Ag Verfahren zur Herstellung eines Einkristalls
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
US20100107968A1 (en) * 2007-04-13 2010-05-06 Topsil Simiconductor Materials A/S Method and apparatus for producing a single crystal
WO2010060349A1 (zh) * 2008-11-25 2010-06-03 Liu Chaoxuan 制造多根硅芯的高频线圈拉制孔布局
JP4831203B2 (ja) * 2009-04-24 2011-12-07 信越半導体株式会社 半導体単結晶の製造方法および半導体単結晶の製造装置
JP5234148B2 (ja) * 2011-08-04 2013-07-10 信越半導体株式会社 半導体単結晶の製造方法および半導体単結晶の製造装置
JP5803729B2 (ja) * 2012-02-17 2015-11-04 信越半導体株式会社 誘導加熱コイル及び該コイルを使用した単結晶の製造方法
CN103114325A (zh) * 2013-02-25 2013-05-22 天津市环欧半导体材料技术有限公司 气相掺杂区熔硅单晶的生产方法
DE102014226419A1 (de) * 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone
CN111748842B (zh) * 2020-07-09 2022-02-22 泉州市依科达半导体致冷科技有限公司 用于半导体晶棒拉晶的区熔炉及拉晶区域熔炼方法
EP4144894A1 (de) 2021-09-07 2023-03-08 Siltronic AG Verfahren zum herstellen eines einkristalls aus silicium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
CH472236A (de) * 1968-05-30 1969-05-15 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
DE1802524B1 (de) * 1968-10-11 1970-06-04 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
US4220839A (en) * 1978-01-05 1980-09-02 Topsil A/S Induction heating coil for float zone melting of semiconductor rods
DE2812216A1 (de) * 1978-03-20 1979-10-11 Siemens Ag Verfahren zum besseren aufschmelzen des vorratsstabes beim tiegelfreien zonenschmelzen
DE3600531A1 (de) * 1986-01-10 1987-07-16 Siemens Ag Vorrichtung zum herstellen von einkristallinem halbleitermaterial
DE3603766A1 (de) * 1986-02-06 1987-08-13 Wacker Chemitronic Induktionsheizspule fuer das tiegelfreie zonenziehen von kristallstaeben
DE3625669A1 (de) * 1986-07-29 1988-02-04 Siemens Ag Induktionsheizer zum tiegelfreien zonenschmelzen

Also Published As

Publication number Publication date
DE3805118C2 (da) 1992-04-30
US4851628A (en) 1989-07-25
JPH062636B2 (ja) 1994-01-12
DK169355B1 (da) 1994-10-10
DK74689A (da) 1989-08-19
DE3805118A1 (de) 1989-08-24
JPH01252596A (ja) 1989-10-09

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Legal Events

Date Code Title Description
B1 Patent granted (law 1993)
PUP Patent expired