DK0475259T3 - Fremgangsmåde til fremstilling af halvlederelementer - Google Patents

Fremgangsmåde til fremstilling af halvlederelementer

Info

Publication number
DK0475259T3
DK0475259T3 DK91114907.8T DK91114907T DK0475259T3 DK 0475259 T3 DK0475259 T3 DK 0475259T3 DK 91114907 T DK91114907 T DK 91114907T DK 0475259 T3 DK0475259 T3 DK 0475259T3
Authority
DK
Denmark
Prior art keywords
semiconductor elements
manufacturing semiconductor
manufacturing
elements
semiconductor
Prior art date
Application number
DK91114907.8T
Other languages
English (en)
Inventor
Masanori Nishiguchi
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of DK0475259T3 publication Critical patent/DK0475259T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
DK91114907.8T 1990-09-05 1991-09-04 Fremgangsmåde til fremstilling af halvlederelementer DK0475259T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2235152A JP2610703B2 (ja) 1990-09-05 1990-09-05 半導体素子の製造方法

Publications (1)

Publication Number Publication Date
DK0475259T3 true DK0475259T3 (da) 1996-01-15

Family

ID=16981823

Family Applications (1)

Application Number Title Priority Date Filing Date
DK91114907.8T DK0475259T3 (da) 1990-09-05 1991-09-04 Fremgangsmåde til fremstilling af halvlederelementer

Country Status (8)

Country Link
US (1) US5122481A (da)
EP (1) EP0475259B1 (da)
JP (1) JP2610703B2 (da)
KR (1) KR940002915B1 (da)
AU (1) AU649063B2 (da)
CA (1) CA2050675A1 (da)
DE (1) DE69112545T2 (da)
DK (1) DK0475259T3 (da)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279704A (en) * 1991-04-23 1994-01-18 Honda Giken Kogyo Kabushiki Kaisha Method of fabricating semiconductor device
US5245794A (en) * 1992-04-09 1993-09-21 Advanced Micro Devices, Inc. Audio end point detector for chemical-mechanical polishing and method therefor
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
US5480842A (en) * 1994-04-11 1996-01-02 At&T Corp. Method for fabricating thin, strong, and flexible die for smart cards
JPH0817777A (ja) * 1994-07-01 1996-01-19 Mitsubishi Materials Shilicon Corp シリコンウェーハの洗浄方法
US5691248A (en) * 1995-07-26 1997-11-25 International Business Machines Corporation Methods for precise definition of integrated circuit chip edges
US5648684A (en) * 1995-07-26 1997-07-15 International Business Machines Corporation Endcap chip with conductive, monolithic L-connect for multichip stack
US6059637A (en) * 1997-12-15 2000-05-09 Lsi Logic Corporation Process for abrasive removal of copper from the back surface of a silicon substrate
DE19921230B4 (de) * 1999-05-07 2009-04-02 Giesecke & Devrient Gmbh Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
US6560871B1 (en) * 2000-03-21 2003-05-13 Hewlett-Packard Development Company, L.P. Semiconductor substrate having increased facture strength and method of forming the same
KR100467009B1 (ko) * 2000-08-04 2005-01-24 샤프 가부시키가이샤 반도체 웨이퍼 표면의 오염을 방지할 수 있는 반도체웨이퍼의 박층화 방법 및 반도체 웨이퍼의 이면 연삭장치
EP1635390B1 (en) 2002-03-12 2011-07-27 Hamamatsu Photonics K. K. Substrate dividing method
JP4544876B2 (ja) * 2003-02-25 2010-09-15 三洋電機株式会社 半導体装置の製造方法
JP2005005380A (ja) * 2003-06-10 2005-01-06 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2005026314A (ja) * 2003-06-30 2005-01-27 Sanyo Electric Co Ltd 固体撮像素子の製造方法
JP2005303218A (ja) * 2004-04-16 2005-10-27 Renesas Technology Corp 半導体装置およびその製造方法
JP4872208B2 (ja) * 2004-11-18 2012-02-08 富士電機株式会社 半導体装置の製造方法
JP5149020B2 (ja) * 2008-01-23 2013-02-20 株式会社ディスコ ウエーハの研削方法
GB2459301B (en) * 2008-04-18 2011-09-14 Xsil Technology Ltd A method of dicing wafers to give high die strength
KR20230108142A (ko) * 2022-01-10 2023-07-18 도레이첨단소재 주식회사 고강도 메타 아라미드 섬유 및 그의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU393073A1 (ru) * 1970-12-04 1973-08-10 Способ повышения долговечности алмазных, например выглаживающих инструментов
AU527845B2 (en) * 1978-01-19 1983-03-24 E. Sachs & Co. Ltd Fascia gutter
US4411107A (en) * 1980-02-01 1983-10-25 Disco Co., Ltd. Grinding wheel for flat plates
FR2505713A1 (fr) * 1981-05-18 1982-11-19 Procedes Equip Sciences Ind Sa Porte-plaquette pour machines a polir des plaquettes minces, fragiles et deformables
DE3148957A1 (de) * 1981-12-10 1983-06-23 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen "verfahren zur rueckseitengetternden oberflaechenbehandlung von halbleiterscheiben"
JPS58184727A (ja) * 1982-04-23 1983-10-28 Disco Abrasive Sys Ltd シリコンウェ−ハの面を研削する方法
JPS62243332A (ja) * 1986-04-15 1987-10-23 Toshiba Corp 半導体ウエハの加工方法
EP0272531B1 (en) * 1986-12-08 1991-07-31 Sumitomo Electric Industries Limited Surface grinding machine
JPS6437025A (en) * 1987-08-03 1989-02-07 Sumitomo Electric Industries Manufacture of semiconductor device

Also Published As

Publication number Publication date
KR920007104A (ko) 1992-04-28
AU649063B2 (en) 1994-05-12
EP0475259B1 (en) 1995-08-30
CA2050675A1 (en) 1992-03-06
JP2610703B2 (ja) 1997-05-14
AU8353891A (en) 1992-03-12
EP0475259A2 (en) 1992-03-18
DE69112545T2 (de) 1996-05-02
US5122481A (en) 1992-06-16
DE69112545D1 (de) 1995-10-05
JPH04115528A (ja) 1992-04-16
KR940002915B1 (ko) 1994-04-07
EP0475259A3 (en) 1992-12-16

Similar Documents

Publication Publication Date Title
DK0475259T3 (da) Fremgangsmåde til fremstilling af halvlederelementer
DE69132627T2 (de) Halbleiter-bauteil
DE69131762D1 (de) Herstellungsverfahren für Halbleitereinrichtungen
DE69104429D1 (de) Optisches Halbleiterbauelement.
DK674288A (da) Fremgangsmaade til fremstilling af mikrokapsler
DK55191A (da) Fremgangsmaade til fremstilling af rekombinerede genprodukter
DK180791D0 (da) Fremgangsmaade til fremstilling af reflekterende genstand
DK0458150T3 (da) Fremgangsmåde til fremstilling af formede genstande
DK382084A (da) Fremgangsmaade til fremstilling af penemer
DE69131241T2 (de) Herstellungsverfahren für Halbleiteranordnungen
DK170990D0 (da) Fremgangsmaade til fremstilling af celleplast
DK0554846T3 (da) Fremgangsmåde til fremstilling af lysmodtagende halvlederelementer
DK0509342T3 (da) Fremgangsmåde til fremstilling af kileformede strukturer
DE69105530T2 (de) Halbleiterscheibe.
DE69125498T2 (de) Halbleiterverrichtungsherstellungsverfahren
DK0465373T3 (da) Fremgangsmåde til fremstilling af kappa-carragenaner
DE69111513T2 (de) Halbleiterherstellungseinrichtung.
DK40891D0 (da) Fremgangsmaade til fremstilling af cephalosporiner
DK132084D0 (da) Fremgangsmaade til fremstilling af mikrokapsler
DK65883D0 (da) Fremgangsmade til fremstilling af elastase
DK103090D0 (da) Fremgangsmaade til fremstilling af thieno-triazolodiazepiner
KR920003463A (ko) 반도체소자 제조방법
KR920013590A (ko) 반도체 소자 제조방법
DE69124086D1 (de) Halbleiterbauelement
KR910017541A (ko) 화합물반도체의 제조방법