KR920003463A - 반도체소자 제조방법 - Google Patents

반도체소자 제조방법

Info

Publication number
KR920003463A
KR920003463A KR1019900010424A KR900010424A KR920003463A KR 920003463 A KR920003463 A KR 920003463A KR 1019900010424 A KR1019900010424 A KR 1019900010424A KR 900010424 A KR900010424 A KR 900010424A KR 920003463 A KR920003463 A KR 920003463A
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Application number
KR1019900010424A
Other languages
English (en)
Other versions
KR930005481B1 (ko
Inventor
한병율
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900010424A priority Critical patent/KR930005481B1/ko
Publication of KR920003463A publication Critical patent/KR920003463A/ko
Application granted granted Critical
Publication of KR930005481B1 publication Critical patent/KR930005481B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
KR1019900010424A 1990-07-10 1990-07-10 반도체소자 제조방법 KR930005481B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900010424A KR930005481B1 (ko) 1990-07-10 1990-07-10 반도체소자 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900010424A KR930005481B1 (ko) 1990-07-10 1990-07-10 반도체소자 제조방법

Publications (2)

Publication Number Publication Date
KR920003463A true KR920003463A (ko) 1992-02-29
KR930005481B1 KR930005481B1 (ko) 1993-06-22

Family

ID=19301092

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900010424A KR930005481B1 (ko) 1990-07-10 1990-07-10 반도체소자 제조방법

Country Status (1)

Country Link
KR (1) KR930005481B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990004608A (ko) * 1997-06-28 1999-01-15 김영환 반도체소자의 소자분리절연막 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990004608A (ko) * 1997-06-28 1999-01-15 김영환 반도체소자의 소자분리절연막 형성방법

Also Published As

Publication number Publication date
KR930005481B1 (ko) 1993-06-22

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050524

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee