DE710161T1 - Nachbehandlung eines beschichteten substrates mit einem angeregtes halogen enthaltenden gas für die beseitigung von rückständen - Google Patents
Nachbehandlung eines beschichteten substrates mit einem angeregtes halogen enthaltenden gas für die beseitigung von rückständenInfo
- Publication number
- DE710161T1 DE710161T1 DE0710161T DE94922123T DE710161T1 DE 710161 T1 DE710161 T1 DE 710161T1 DE 0710161 T DE0710161 T DE 0710161T DE 94922123 T DE94922123 T DE 94922123T DE 710161 T1 DE710161 T1 DE 710161T1
- Authority
- DE
- Germany
- Prior art keywords
- gas
- space
- substrate
- halogen
- torr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims 9
- 238000000034 method Methods 0.000 claims 21
- 239000000463 material Substances 0.000 claims 6
- 229910052736 halogen Inorganic materials 0.000 claims 4
- 150000002367 halogens Chemical class 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000004927 fusion Effects 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229920003986 novolac Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9241793A | 1993-07-16 | 1993-07-16 | |
| PCT/US1994/007751 WO1995002472A1 (fr) | 1993-07-16 | 1994-07-12 | Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE710161T1 true DE710161T1 (de) | 1997-01-30 |
Family
ID=22233105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE0710161T Pending DE710161T1 (de) | 1993-07-16 | 1994-07-12 | Nachbehandlung eines beschichteten substrates mit einem angeregtes halogen enthaltenden gas für die beseitigung von rückständen |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0710161A4 (fr) |
| JP (1) | JPH09502646A (fr) |
| DE (1) | DE710161T1 (fr) |
| WO (1) | WO1995002472A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001519040A (ja) * | 1995-08-30 | 2001-10-16 | ドイッチェ テレコム アーゲー | 三次元表面の構造化におけるコントラストを向上させる方法 |
| DE19630705A1 (de) | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Verfahren zur Herstellung von 3-dimensional strukturierten Polymerschichten für die integrierte Optik |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221423A (en) * | 1986-05-20 | 1993-06-22 | Fujitsu Limited | Process for cleaning surface of semiconductor substrate |
| US4885047A (en) * | 1986-08-11 | 1989-12-05 | Fusion Systems Corporation | Apparatus for photoresist stripping |
| US4797178A (en) * | 1987-05-13 | 1989-01-10 | International Business Machines Corporation | Plasma etch enhancement with large mass inert gas |
| JPH01134932A (ja) * | 1987-11-19 | 1989-05-26 | Oki Electric Ind Co Ltd | 基板清浄化方法及び基板清浄化装置 |
| KR0145302B1 (ko) * | 1988-04-28 | 1998-08-17 | 카자마 젠쥬 | 얇은 막의 형성방법 |
| US5174881A (en) * | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
| US4961820A (en) * | 1988-06-09 | 1990-10-09 | Fujitsu Limited | Ashing method for removing an organic film on a substance of a semiconductor device under fabrication |
| US4970056A (en) * | 1989-01-18 | 1990-11-13 | Fusion Systems Corporation | Ozone generator with improved dielectric and method of manufacture |
| JPH0464234A (ja) * | 1990-07-04 | 1992-02-28 | Mitsubishi Electric Corp | 配線パターンの形成方法 |
| JPH06103682B2 (ja) * | 1990-08-09 | 1994-12-14 | 富士通株式会社 | 光励起ドライクリーニング方法および装置 |
| US5071485A (en) * | 1990-09-11 | 1991-12-10 | Fusion Systems Corporation | Method for photoresist stripping using reverse flow |
| KR960000190B1 (ko) * | 1992-11-09 | 1996-01-03 | 엘지전자주식회사 | 반도체 제조방법 및 그 장치 |
-
1994
- 1994-07-12 JP JP7504652A patent/JPH09502646A/ja active Pending
- 1994-07-12 EP EP94922123A patent/EP0710161A4/fr not_active Withdrawn
- 1994-07-12 DE DE0710161T patent/DE710161T1/de active Pending
- 1994-07-12 WO PCT/US1994/007751 patent/WO1995002472A1/fr not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1995002472A1 (fr) | 1995-01-26 |
| EP0710161A1 (fr) | 1996-05-08 |
| EP0710161A4 (fr) | 1997-04-16 |
| JPH09502646A (ja) | 1997-03-18 |
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