WO1995002472A1 - Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus - Google Patents
Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus Download PDFInfo
- Publication number
- WO1995002472A1 WO1995002472A1 PCT/US1994/007751 US9407751W WO9502472A1 WO 1995002472 A1 WO1995002472 A1 WO 1995002472A1 US 9407751 W US9407751 W US 9407751W WO 9502472 A1 WO9502472 A1 WO 9502472A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- substrate
- space
- photoresist
- halogen
- Prior art date
Links
- 238000011282 treatment Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 229910052736 halogen Inorganic materials 0.000 title claims abstract description 17
- 150000002367 halogens Chemical class 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 52
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229920003986 novolac Polymers 0.000 claims description 3
- UJPMYEOUBPIPHQ-UHFFFAOYSA-N 1,1,1-trifluoroethane Chemical compound CC(F)(F)F UJPMYEOUBPIPHQ-UHFFFAOYSA-N 0.000 claims description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 42
- 239000007789 gas Substances 0.000 description 30
- 238000004380 ashing Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000007943 implant Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical class [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 CF* Chemical class 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000001246 bromo group Chemical class Br* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 235000017168 chlorine Nutrition 0.000 description 1
- 125000001309 chloro group Chemical class Cl* 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 235000013675 iodine Nutrition 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
Definitions
- the present invention is concerned with a post treatment method for the removal of material (i.e., material that has previously been subjected to a removal treatment) .
- the removal process of the present invention involves using a gas containing halogen in an excited state and at pressures of greater than 50 torr.
- the present invention is especially advantageous in removal of photoresist residues, and most especially, those difficult to remove residues created from ion implantation and from etching procedures.
- integrated circuit components which correspond to the desired pattern are formed by processes, including plasma etching or ion implantation.
- the photoresist After the integrated circuit components are formed, it is desired to strip the photoresist from the wafer, which at this point, has already served its useful purpose.
- the relative ease or difficulty with which the photoresist may be stripped depends on the degree to which physical and chemical changes have been induced in the resist during the specific plasma etching, or ion implantation processes.
- plasma etching and ion implantation induce physical and chemical changes in the photoresist, so that stripping is particularly difficult.
- Ion implant residues are residues remaining after ashing a wafer that has been implanted with a dopant specie of interest, typically arsenic, boron, or phosphorus, in order to create the electronically active structure.
- This residue may consist of fragments of the initial resist that may have combined with the implanted specie to create a complex organometallic material that is not readily amenable to removal.
- the second example is that of sidewall polymer residue that may be created intentionally to aid in creating a desired etch geometry, or unintentionally as a consequence of processing, particularly in a fluorine containing plasma environment, such that the resultant polymer is not readily amenable to removal.
- This residue may contain perfluorinated or chlorofluorinated organic materials.
- wet oxidative developers such as sulfuric acid-hydrogen peroxide solution
- plasma ashing the most common techniques which have been used for photoresist stripping.
- wet oxidative developers such as sulfuric acid-hydrogen peroxide solution
- plasma ashing the technique of plasma ashing.
- a further technique for photoresist stripping comprises exposing the photoresist to an ozone-containing gaseous atmosphere.
- ozone-containing gaseous atmosphere In Ury, et al., U.S. Patent No. 4,885,047, entire disclosure of which is incorporated hereby by reference, a photoresist stripping method using ozone which achieves high stripping rates was disclosed. The high stripping rates are achieved by passing the ozone over the photoresist through a narrow gap, while the resist is held at an elevated temperature.
- an oxidizing gas such as a mixture of ozone and oxygen
- the gas flows radially in a narrow gap defined by the wafer, and a quartz plate to the wafer edge. As the gas flows over the wafer, the photoresist is oxidized and thereby removed.
- the treatment gas is used up, i.e., the concentration of atomic oxygen, oxygen, and ozone decreases, as the gas flows over the water surface. Since the gas is introduced at the center of the wafer, the photoresist at the edge which, as discussed above, requires the most reaction to remove, is subject to the least potent gas.
- an apparatus wherein there is a space above the photoresist having both a peripheral area which encompasses the periphery of the space, and a central area is provided.
- the oxidizing gas is introduced at the peripheral area of the space, near which the edge of the wafer is located. The gas is caused to flow from the edge to the center of the wafer, where it is exhausted.
- An object of the present invention is to provide a process for removing material from the surface of a substrate, wherein the material is that which is remaining after prior removal treatment.
- a further object of the present invention is to remove as much as possible of photoresist residue including ion implant residues and sidewall polymer residues.
- Figure 2 is a cross-section of one portion of a photoresist removal apparatus suitable for use in the invention.
- Figure 3 shows the other portion of a removal apparatus partly in cross section suitable for use in the invention.
- Figure 4 shows the removal apparatus having both portions.
- the process of the present invention employs a gaseous mixture that contains excited halogen.
- suitable halogens employed are fluorine containing compounds such as CF * ,, C 2 F 6 , CHF 3 , CFH 3 , C 2 H 2 F 4 , C 2 H 4 F 2 , CH 2 F 2 , CH 3 CF 3 , SF 6 , NF 3 and the corresponding iodines, bromines and chlorines.
- the preferred halogens are the fluorine containing materials, such as CF .
- the excited halogen containing gas is created by passing the halogen through cell 1 (see Figure 1) , which may be of the silent or corona discharge type, which have been used for producing ozone.
- cell 1 which may be of the silent or corona discharge type, which have been used for producing ozone.
- the ozonizer available from Fusion Systems Corporation made pursuant to U.S. Patent No. 4,970,056 to Wooten is suitable.
- the excitation is carried out at a pressure of greater than 50 torr, more usually at a pressure of at least 100 torr, preferably at a pressure of about 500 to about 800 torr, and most preferably about 600 to about 800 torr.
- the flow rate of the halogen containing gas is typically about 0.001 to about 30 standard liters per minute (SLM) , to about and more typically about 0.06 - 5 SLM.
- the treatment time i.e., the amount of time the gas and substrate are in contact
- the gas containing excited halogen is conveyed via conduit 2 to process chamber 3 to thereby treat the substrate.
- Suitable process chambers are disclosed in U.S. Patent Nos. 4,885,047 and 5,071,485.
- the process chamber is typically at a pressure of greater than 50 torr, more usually at a pressure of at least 100 torr, preferably at a pressure of about 500 to about 800 torr, and most preferably about 600 to about 800 torr.
- the temperature of the substrate on which the material to be removed is located is typically at least about 100°C, more typically about 200°C to about 350°, and most typically about 250°C to about 350°C.
- Figures 2 to 4 show a process chamber suitable for carrying out the process of the present invention.
- Figure 2 shows a portion of the chamber
- Figure 3 shows a further portion
- Figure 4 shows the two portions in working relationship.
- Space 34 has a peripheral area which encompasses the periphery of the space (adjacent the wafer edge) , and a central area.
- An annular orifice 32 is provided, and the gas is fed through the orifice to the peripheral area of space 34.
- the space 34 is preferably a narrow gap of about 4 millimeters or less, more preferably less than 2 millimeters, and most preferably less than about 0.6 mm.
- the annular orifice may be of such diameter and angular disposition that the gas is directed so that it impinges the heated platform ( Figure 3) just beyond the edge of the wafer, and is then directed to the edge of the wafer, and in turn towards the center of the wafer.
- the annular orifice 32 is defined by an outer distribution plate 40 and an inner distribution plate 41.
- the distribution plates 40, 41 may be exchanged for those of different sizes, so that different size wafers can be accommodated. Additionally, the angular orientation of the orifice may be changed in those instances where it is desirable to impinge the edge of the wafer directly without first impinging the heated platform.
- Treatment gas enters the treatment chamber through a gas fitting 44. It flows around an annular distribution ring 46 and then through the annular orifice 32.
- the chamber may have a plurality of local orifices which are disposed in an annular ring around the chamber.
- the annular distribution ring 46 may be as shown, but instead of opening an annular orifice, may open into a plurality of discrete, local orifices.
- a water jacket 50 is provided to allow control of the inlet gas temperature.
- the treatment gas outlet conduit 54 In the central area of space 34 is the treatment gas outlet conduit 54. After the gas moves across the wafer, it flows into orifice 56 which is at the mouth of conduit 54. Plate 58 is secured to the bottom of the chamber portion shown in Figure 2, and along with the wafer defines a narrow gap over through which the treatment gases flow as they react with the material to be removed.
- the wafer 30 is held on a wafer support platform 50, which is heated, for example, by a resistance heater.
- the wafer support platform may be operated at temperatures up to above 350°C, high temperature being desirable to optimize the process.
- the wafer support platform is supported on flexible support rods 52, and lift mechanism 54 is arranged to raise and lower the platform via support rods 52. Water is circulated in jacket 58 to effect temperature control.
- Figure 4 depicts the two portions of the treatment chamber in operative relationship.
- the bottom portion would be mounted on a chassis, while the top portion would be connected to a power mechanism for lifting
- processing gas is fed to inlet 44. It flows to annular distribution ring 46, and out annular orifice 32 to the heated platform 50, and the edge of the water (not shown) , then across the wafer to centrally located outlet orifice 56.
- the material to be removed by the present invention is material that has already been subjected to removal treatment technique, including wet stripping, plasma ashing and preferably a non-plasma ozone treatment, such as that disclosed in U.S. Patent Nos. 4,885,047 and 5,071,485.
- the process of the present invention is a post treatment.
- the same chamber can be used for both treatment steps of the process, if desired.
- photoresists typically composed of novolak resin based compositions containing a photoactive compound, such as a naphthoquinone, are used. Typically, such are applied to the desired substrate at thicknesses of about 0.5 to 5 microns.
- a photoactive compound such as a naphthoquinone
- the underlying substrates on which the material to be removed is located include silicon wafers, polycrystalline silicon, silicon dioxide, silicon nitride, glass, Group IV- VI semiconductor substrates, such as gallium arsenide, and ceramics, such as aluminum oxide, aluminium suicide, aluminum nitride, and silicon carbide.
- EXAMPLE 1 A six-inch silicon wafer was coated with a 1.5 micron layer of KTI 820 photoresist (positive novolak type resin) . The photoresist is patterned and then subjected to ultraviolet light and heat, in order to harden it as would be done in the course of regular manufacturing. The silicon wafer is then implanted with As + at 80 KeV and 5 E 15 dose.
- KTI 820 photoresist positive novolak type resin
- the resist coated wafer is then treated in a first step in an asher as shown in Figures 2-4 herein, and Figures 2-4 of U.S. Patent No. 5,071,485.
- the flow of gases consisted of 24 slm ozone, oxygen mixture and 0.8 slm excited N 2 0 from a corona discharge ozone generator.
- the process time is about 120 seconds, and the substrate is at a temperature of about 325°C.
- the treated substrate is then post treated in a second step in the same asher used in the first step.
- the flow of gases consisted of 1 slm excited CF* that was activated in a silent or corona discharge cell.
- the treatment time is 60 seconds and the substrate is at a temperature of 325°C during the treatment.
- Example 1 is repeated, except that the silicon wafer is implanted with As + at 80 KeV, 1 E 16 dose. The results obtained are similar to those obtained in Example 1.
- Example 1 is repeated, except that the silicon wafer is ion implanted with BF 2 at 80 KeV 1 E 16 dose. The results obtained are at least as good as those obtained in Example 1.
- Example 1 is repeated, except that the silicon wafer is ion implanted with P+ at 120 KeV, 1 E 16 dose. The results obtained are similar to those obtained in Example 1.
- EXAMPLE 5 is repeated, except that the silicon wafer is ion implanted with P+ at 120 KeV, 1 E 16 dose. The results obtained are similar to those obtained in Example 1.
- EXAMPLE 5 is repeated, except that the silicon wafer is ion implanted with P+ at 120 KeV, 1 E 16 dose. The results obtained are similar to those obtained in Example 1.
- Example 1 is repeated, except that the silicon wafer also contains silicon dioxide layer therein, and is ion implanted with P+ at 120 KeV, 1 E 16 dose. The results obtained are similar to those obtained in Example 1.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94922123A EP0710161A4 (fr) | 1993-07-16 | 1994-07-12 | Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus |
JP7504652A JPH09502646A (ja) | 1993-07-16 | 1994-07-12 | 残留物を除去するために励起させたハロゲンを含有するガスでのコーティングした基板の後処理 |
DE0710161T DE710161T1 (de) | 1993-07-16 | 1994-07-12 | Nachbehandlung eines beschichteten substrates mit einem angeregtes halogen enthaltenden gas für die beseitigung von rückständen |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9241793A | 1993-07-16 | 1993-07-16 | |
US08/092,417 | 1993-07-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995002472A1 true WO1995002472A1 (fr) | 1995-01-26 |
Family
ID=22233105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1994/007751 WO1995002472A1 (fr) | 1993-07-16 | 1994-07-12 | Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0710161A4 (fr) |
JP (1) | JPH09502646A (fr) |
DE (1) | DE710161T1 (fr) |
WO (1) | WO1995002472A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997010088A2 (fr) * | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Procede pour ameliorer le contraste lors de la structuration de surfaces tridimensionnelles |
US6291139B1 (en) | 1995-08-30 | 2001-09-18 | Deutsche Telekom Ag | Process for fabricating three-dimensional polymer layer structures |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4797178A (en) * | 1987-05-13 | 1989-01-10 | International Business Machines Corporation | Plasma etch enhancement with large mass inert gas |
US4885047A (en) * | 1986-08-11 | 1989-12-05 | Fusion Systems Corporation | Apparatus for photoresist stripping |
US4970056A (en) * | 1989-01-18 | 1990-11-13 | Fusion Systems Corporation | Ozone generator with improved dielectric and method of manufacture |
US5011705A (en) * | 1988-04-28 | 1991-04-30 | Tel Sagami Limited | Plasma processing method |
US5057187A (en) * | 1988-06-09 | 1991-10-15 | Fujitsu Ltd. | Ashing method for removing an organic film on a substance of a semiconductor device under fabrication |
US5071485A (en) * | 1990-09-11 | 1991-12-10 | Fusion Systems Corporation | Method for photoresist stripping using reverse flow |
US5221423A (en) * | 1986-05-20 | 1993-06-22 | Fujitsu Limited | Process for cleaning surface of semiconductor substrate |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01134932A (ja) * | 1987-11-19 | 1989-05-26 | Oki Electric Ind Co Ltd | 基板清浄化方法及び基板清浄化装置 |
US5174881A (en) * | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
JPH0464234A (ja) * | 1990-07-04 | 1992-02-28 | Mitsubishi Electric Corp | 配線パターンの形成方法 |
JPH06103682B2 (ja) * | 1990-08-09 | 1994-12-14 | 富士通株式会社 | 光励起ドライクリーニング方法および装置 |
KR960000190B1 (ko) * | 1992-11-09 | 1996-01-03 | 엘지전자주식회사 | 반도체 제조방법 및 그 장치 |
-
1994
- 1994-07-12 JP JP7504652A patent/JPH09502646A/ja active Pending
- 1994-07-12 EP EP94922123A patent/EP0710161A4/fr not_active Withdrawn
- 1994-07-12 DE DE0710161T patent/DE710161T1/de active Pending
- 1994-07-12 WO PCT/US1994/007751 patent/WO1995002472A1/fr not_active Application Discontinuation
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US5221423A (en) * | 1986-05-20 | 1993-06-22 | Fujitsu Limited | Process for cleaning surface of semiconductor substrate |
US4885047A (en) * | 1986-08-11 | 1989-12-05 | Fusion Systems Corporation | Apparatus for photoresist stripping |
US4797178A (en) * | 1987-05-13 | 1989-01-10 | International Business Machines Corporation | Plasma etch enhancement with large mass inert gas |
US5011705A (en) * | 1988-04-28 | 1991-04-30 | Tel Sagami Limited | Plasma processing method |
US5057187A (en) * | 1988-06-09 | 1991-10-15 | Fujitsu Ltd. | Ashing method for removing an organic film on a substance of a semiconductor device under fabrication |
US4970056A (en) * | 1989-01-18 | 1990-11-13 | Fusion Systems Corporation | Ozone generator with improved dielectric and method of manufacture |
US5071485A (en) * | 1990-09-11 | 1991-12-10 | Fusion Systems Corporation | Method for photoresist stripping using reverse flow |
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Title |
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AMERICAN CHEMICAL SOCIETY, 1983: "Introduction to Microlithography", (THOMPSON et al.), pages 111-121. * |
See also references of EP0710161A4 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997010088A2 (fr) * | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Procede pour ameliorer le contraste lors de la structuration de surfaces tridimensionnelles |
WO1997010088A3 (fr) * | 1995-08-30 | 1997-06-19 | Deutsche Telekom Ag | Procede pour ameliorer le contraste lors de la structuration de surfaces tridimensionnelles |
US6232046B1 (en) * | 1995-08-30 | 2001-05-15 | Deutsche Telekom Ag | Process for improving the contrast in the structure of 3-dimensional surfaces |
US6291139B1 (en) | 1995-08-30 | 2001-09-18 | Deutsche Telekom Ag | Process for fabricating three-dimensional polymer layer structures |
Also Published As
Publication number | Publication date |
---|---|
EP0710161A1 (fr) | 1996-05-08 |
EP0710161A4 (fr) | 1997-04-16 |
JPH09502646A (ja) | 1997-03-18 |
DE710161T1 (de) | 1997-01-30 |
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