WO1995002472A1 - Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus - Google Patents

Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus Download PDF

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Publication number
WO1995002472A1
WO1995002472A1 PCT/US1994/007751 US9407751W WO9502472A1 WO 1995002472 A1 WO1995002472 A1 WO 1995002472A1 US 9407751 W US9407751 W US 9407751W WO 9502472 A1 WO9502472 A1 WO 9502472A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
substrate
space
photoresist
halogen
Prior art date
Application number
PCT/US1994/007751
Other languages
English (en)
Inventor
Eileen R. Sparks
James C. Mitchener
Stuart N. Rounds
John C. Matthews
Original Assignee
Fusion Systems Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fusion Systems Corporation filed Critical Fusion Systems Corporation
Priority to DE0710161T priority Critical patent/DE710161T1/de
Priority to EP94922123A priority patent/EP0710161A4/fr
Priority to JP7504652A priority patent/JPH09502646A/ja
Publication of WO1995002472A1 publication Critical patent/WO1995002472A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Les produits qui ont été soumis au préalable à un traitement d'élimination sont enlevés d'un substrat par contact avec un gaz contenant un halogène activé, à une pression supérieure à 50 torrs.
PCT/US1994/007751 1993-07-16 1994-07-12 Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus WO1995002472A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE0710161T DE710161T1 (de) 1993-07-16 1994-07-12 Nachbehandlung eines beschichteten substrates mit einem angeregtes halogen enthaltenden gas für die beseitigung von rückständen
EP94922123A EP0710161A4 (fr) 1993-07-16 1994-07-12 Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus
JP7504652A JPH09502646A (ja) 1993-07-16 1994-07-12 残留物を除去するために励起させたハロゲンを含有するガスでのコーティングした基板の後処理

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9241793A 1993-07-16 1993-07-16
US08/092,417 1993-07-16

Publications (1)

Publication Number Publication Date
WO1995002472A1 true WO1995002472A1 (fr) 1995-01-26

Family

ID=22233105

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1994/007751 WO1995002472A1 (fr) 1993-07-16 1994-07-12 Post-traitement d'un substrat portant un revetement, avec un gaz contenant un halogene active pour enlever des residus

Country Status (4)

Country Link
EP (1) EP0710161A4 (fr)
JP (1) JPH09502646A (fr)
DE (1) DE710161T1 (fr)
WO (1) WO1995002472A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997010088A2 (fr) * 1995-08-30 1997-03-20 Deutsche Telekom Ag Procede pour ameliorer le contraste lors de la structuration de surfaces tridimensionnelles
US6291139B1 (en) 1995-08-30 2001-09-18 Deutsche Telekom Ag Process for fabricating three-dimensional polymer layer structures

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797178A (en) * 1987-05-13 1989-01-10 International Business Machines Corporation Plasma etch enhancement with large mass inert gas
US4885047A (en) * 1986-08-11 1989-12-05 Fusion Systems Corporation Apparatus for photoresist stripping
US4970056A (en) * 1989-01-18 1990-11-13 Fusion Systems Corporation Ozone generator with improved dielectric and method of manufacture
US5011705A (en) * 1988-04-28 1991-04-30 Tel Sagami Limited Plasma processing method
US5057187A (en) * 1988-06-09 1991-10-15 Fujitsu Ltd. Ashing method for removing an organic film on a substance of a semiconductor device under fabrication
US5071485A (en) * 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow
US5221423A (en) * 1986-05-20 1993-06-22 Fujitsu Limited Process for cleaning surface of semiconductor substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134932A (ja) * 1987-11-19 1989-05-26 Oki Electric Ind Co Ltd 基板清浄化方法及び基板清浄化装置
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
JPH0464234A (ja) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp 配線パターンの形成方法
JPH06103682B2 (ja) * 1990-08-09 1994-12-14 富士通株式会社 光励起ドライクリーニング方法および装置
KR960000190B1 (ko) * 1992-11-09 1996-01-03 엘지전자주식회사 반도체 제조방법 및 그 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221423A (en) * 1986-05-20 1993-06-22 Fujitsu Limited Process for cleaning surface of semiconductor substrate
US4885047A (en) * 1986-08-11 1989-12-05 Fusion Systems Corporation Apparatus for photoresist stripping
US4797178A (en) * 1987-05-13 1989-01-10 International Business Machines Corporation Plasma etch enhancement with large mass inert gas
US5011705A (en) * 1988-04-28 1991-04-30 Tel Sagami Limited Plasma processing method
US5057187A (en) * 1988-06-09 1991-10-15 Fujitsu Ltd. Ashing method for removing an organic film on a substance of a semiconductor device under fabrication
US4970056A (en) * 1989-01-18 1990-11-13 Fusion Systems Corporation Ozone generator with improved dielectric and method of manufacture
US5071485A (en) * 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
AMERICAN CHEMICAL SOCIETY, 1983: "Introduction to Microlithography", (THOMPSON et al.), pages 111-121. *
See also references of EP0710161A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997010088A2 (fr) * 1995-08-30 1997-03-20 Deutsche Telekom Ag Procede pour ameliorer le contraste lors de la structuration de surfaces tridimensionnelles
WO1997010088A3 (fr) * 1995-08-30 1997-06-19 Deutsche Telekom Ag Procede pour ameliorer le contraste lors de la structuration de surfaces tridimensionnelles
US6232046B1 (en) * 1995-08-30 2001-05-15 Deutsche Telekom Ag Process for improving the contrast in the structure of 3-dimensional surfaces
US6291139B1 (en) 1995-08-30 2001-09-18 Deutsche Telekom Ag Process for fabricating three-dimensional polymer layer structures

Also Published As

Publication number Publication date
EP0710161A4 (fr) 1997-04-16
JPH09502646A (ja) 1997-03-18
EP0710161A1 (fr) 1996-05-08
DE710161T1 (de) 1997-01-30

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