DE69940627D1 - Halbleiteranordnung mit einem bipolartransistor und verfahren zur herstellung - Google Patents

Halbleiteranordnung mit einem bipolartransistor und verfahren zur herstellung

Info

Publication number
DE69940627D1
DE69940627D1 DE69940627T DE69940627T DE69940627D1 DE 69940627 D1 DE69940627 D1 DE 69940627D1 DE 69940627 T DE69940627 T DE 69940627T DE 69940627 T DE69940627 T DE 69940627T DE 69940627 D1 DE69940627 D1 DE 69940627D1
Authority
DE
Germany
Prior art keywords
manufacturing
bipolar transistor
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940627T
Other languages
English (en)
Inventor
Godefridus A M Hurkx
Holger Schligtenhorst
Bernd Sievers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE69940627D1 publication Critical patent/DE69940627D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE69940627T 1998-02-09 1999-01-28 Halbleiteranordnung mit einem bipolartransistor und verfahren zur herstellung Expired - Lifetime DE69940627D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP98200394 1998-02-09
PCT/IB1999/000171 WO1999040630A2 (en) 1998-02-09 1999-01-28 Semiconductor device with a bipolar transistor, and method of manufacturing such a device

Publications (1)

Publication Number Publication Date
DE69940627D1 true DE69940627D1 (de) 2009-05-07

Family

ID=8233372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940627T Expired - Lifetime DE69940627D1 (de) 1998-02-09 1999-01-28 Halbleiteranordnung mit einem bipolartransistor und verfahren zur herstellung

Country Status (5)

Country Link
US (2) US6252282B1 (de)
EP (1) EP0974165B1 (de)
JP (1) JP2002511195A (de)
DE (1) DE69940627D1 (de)
WO (1) WO1999040630A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003529822A (ja) * 1999-12-22 2003-10-07 イースピード， インコーポレイテッド 商取引インターフェースを提供するためのシステムおよびその方法
JP3730483B2 (ja) * 2000-06-30 2006-01-05 株式会社東芝 バイポーラトランジスタ
US6968157B2 (en) * 2001-08-22 2005-11-22 University Of Maryland System and method for protecting devices from interference signals
JP2006245415A (ja) * 2005-03-04 2006-09-14 Sharp Corp 半導体記憶装置及びその製造方法、並びに携帯電子機器
US7854236B2 (en) 2007-06-19 2010-12-21 Praxair Technology, Inc. Vacuum insulated piping assembly method
CN110752256B (zh) * 2019-10-22 2021-04-06 深圳第三代半导体研究院 一种碳化硅肖特基钳位晶体管及其制备方法
CN114999914A (zh) * 2022-07-01 2022-09-02 锦州辽晶电子科技有限公司 一种提高抗二次击穿耐量的功率晶体管的制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3707410A (en) * 1965-07-30 1972-12-26 Hitachi Ltd Method of manufacturing semiconductor devices
US3649882A (en) * 1970-05-13 1972-03-14 Albert Louis Hoffman Diffused alloyed emitter and the like and a method of manufacture thereof
GB1355806A (en) * 1970-12-09 1974-06-05 Mullard Ltd Methods of manufacturing a semiconductor device
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
US4006046A (en) * 1975-04-21 1977-02-01 Trw Inc. Method for compensating for emitter-push effect in the fabrication of transistors
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
JPS5821866A (ja) * 1981-07-31 1983-02-08 Toshiba Corp 半導体装置
US4742380A (en) * 1982-02-09 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Switch utilizing solid-state relay
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
US4860072A (en) * 1986-03-05 1989-08-22 Ixys Corporation Monolithic semiconductor device and method of manufacturing same
JPS62290173A (ja) * 1986-06-09 1987-12-17 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
US5132235A (en) * 1987-08-07 1992-07-21 Siliconix Incorporated Method for fabricating a high voltage MOS transistor
US5218228A (en) * 1987-08-07 1993-06-08 Siliconix Inc. High voltage MOS transistors with reduced parasitic current gain
US4969027A (en) * 1988-07-18 1990-11-06 General Electric Company Power bipolar transistor device with integral antisaturation diode
EP0645821B1 (de) * 1993-09-27 2001-09-26 STMicroelectronics S.r.l. Rauscharmer bipolarer Transistor
US5536958A (en) * 1995-05-02 1996-07-16 Motorola, Inc. Semiconductor device having high voltage protection capability

Also Published As

Publication number Publication date
EP0974165A2 (de) 2000-01-26
WO1999040630A3 (en) 1999-10-28
US20020024113A1 (en) 2002-02-28
US6930011B2 (en) 2005-08-16
US6252282B1 (en) 2001-06-26
JP2002511195A (ja) 2002-04-09
WO1999040630A2 (en) 1999-08-12
EP0974165B1 (de) 2009-03-25

Similar Documents

Publication Publication Date Title
DE69942333D1 (de) Lateraler bipolartransistor mit cmos und verfahren zur herstellung
DE69629069D1 (de) Bipolare Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung
DE69034157D1 (de) Bipolartransistor mit isolierter Gate-Elektrode und Verfahren zur Herstellung
DE60039561D1 (de) Heteroübergang-Bipolartransistor und Verfahren zur Herstellung
DE69837030D1 (de) Silizium-germanium-halbleiteranordnung und verfahren zur herstellung
DE69621088D1 (de) Bipolartransistor und Verfahren zur Herstellung
DE69413860D1 (de) Transistoren und Verfahren zur Herstellung
DE69632567D1 (de) MOS-Transistor und Verfahren zur Herstellung desselben
DE69431023T2 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE69624278T2 (de) Bipolartransistor und Verfahren zur Herstellung
DE69530648D1 (de) Bipolartranistor mit einem sehr niedrigen Basisschichtwiderstand und Verfahren zur Herstellung
DE69508885D1 (de) Halbleiterdiode und Verfahren zur Herstellung
DE69427913T2 (de) Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung
DE69637746D1 (de) Transistor und verfahren zur herstellung
DE69322000T2 (de) Verfahren zur Herstellung eines bipolaren Heteroübergangstransistors und so erhaltener Transistor
DE69525316T2 (de) Bipolartransistor und Verfahren zur Herstellung desselben
DE69940627D1 (de) Halbleiteranordnung mit einem bipolartransistor und verfahren zur herstellung
DE69838683D1 (de) Halbleiterbauelement und verfahren zur herstellung
DE69927143T2 (de) Halbleiteranordnung und verfahren zur herstellung
DE69637500D1 (de) Bipolartransistor mit epitaxialer Basis und Verfahren zur Herstellung
DE60228916D1 (de) Heteroübergang-Bipolartransistor und Verfahren zur Herstellung
DE69528683T2 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben
DE60037558D1 (de) Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator
DE69626299T2 (de) Halbleiteranordnung und verfahren zur herstellung
DE69026565D1 (de) Verfahren zur Herstellung einer halbleiterintegrierten Schaltung umfassend einen Heteroübergang-Bipolartransistor und/oder einen vergrabenen Widerstand

Legal Events

Date Code Title Description
8364 No opposition during term of opposition