DE69934975D1 - Verfahren zur Herstellung von Kondensatorelementen auf einem Halbleitersubstrat - Google Patents

Verfahren zur Herstellung von Kondensatorelementen auf einem Halbleitersubstrat

Info

Publication number
DE69934975D1
DE69934975D1 DE69934975T DE69934975T DE69934975D1 DE 69934975 D1 DE69934975 D1 DE 69934975D1 DE 69934975 T DE69934975 T DE 69934975T DE 69934975 T DE69934975 T DE 69934975T DE 69934975 D1 DE69934975 D1 DE 69934975D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
capacitor elements
producing capacitor
producing
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69934975T
Other languages
English (en)
Other versions
DE69934975T2 (de
Inventor
Sebastiano Ravesi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69934975D1 publication Critical patent/DE69934975D1/de
Application granted granted Critical
Publication of DE69934975T2 publication Critical patent/DE69934975T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69934975T 1999-07-30 1999-07-30 Verfahren zur Herstellung von Kondensatorelementen auf einem Halbleitersubstrat Expired - Lifetime DE69934975T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830492A EP1073101B1 (de) 1999-07-30 1999-07-30 Verfahren zur Herstellung von Kondensatorelementen auf einem Halbleitersubstrat

Publications (2)

Publication Number Publication Date
DE69934975D1 true DE69934975D1 (de) 2007-03-15
DE69934975T2 DE69934975T2 (de) 2007-12-06

Family

ID=8243528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934975T Expired - Lifetime DE69934975T2 (de) 1999-07-30 1999-07-30 Verfahren zur Herstellung von Kondensatorelementen auf einem Halbleitersubstrat

Country Status (4)

Country Link
US (1) US6503823B1 (de)
EP (1) EP1073101B1 (de)
JP (1) JP2001053229A (de)
DE (1) DE69934975T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803306B2 (en) * 2001-01-04 2004-10-12 Broadcom Corporation High density metal capacitor using via etch stopping layer as field dielectric in dual-damascence interconnect process
US20030006480A1 (en) * 2001-06-29 2003-01-09 Jenny Lian MIMCap with high dielectric constant insulator
US8240217B2 (en) * 2007-10-15 2012-08-14 Kavlico Corporation Diaphragm isolation forming through subtractive etching

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219787A (en) * 1990-07-23 1993-06-15 Microelectronics And Computer Technology Corporation Trenching techniques for forming channels, vias and components in substrates
JPH06204404A (ja) * 1992-12-28 1994-07-22 Hitachi Ltd 半導体装置、並びに容量素子およびその製造方法
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
JPH09306988A (ja) * 1996-03-13 1997-11-28 Sony Corp 多層配線の形成方法
JPH11168200A (ja) * 1997-10-01 1999-06-22 Mitsubishi Electric Corp キャパシタを有する半導体装置およびその製造方法
US6242299B1 (en) * 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode

Also Published As

Publication number Publication date
JP2001053229A (ja) 2001-02-23
EP1073101A1 (de) 2001-01-31
DE69934975T2 (de) 2007-12-06
US6503823B1 (en) 2003-01-07
EP1073101B1 (de) 2007-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition