DE69933493D1 - Zugriffsstruktur für hochintegrierten Festwertspeicher - Google Patents

Zugriffsstruktur für hochintegrierten Festwertspeicher

Info

Publication number
DE69933493D1
DE69933493D1 DE69933493T DE69933493T DE69933493D1 DE 69933493 D1 DE69933493 D1 DE 69933493D1 DE 69933493 T DE69933493 T DE 69933493T DE 69933493 T DE69933493 T DE 69933493T DE 69933493 D1 DE69933493 D1 DE 69933493D1
Authority
DE
Germany
Prior art keywords
memory
highly integrated
access structure
integrated read
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69933493T
Other languages
English (en)
Other versions
DE69933493T2 (de
Inventor
Jay Henry O'neill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE69933493D1 publication Critical patent/DE69933493D1/de
Publication of DE69933493T2 publication Critical patent/DE69933493T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
DE69933493T 1998-02-26 1999-02-16 Zugriffsstruktur für hochintegrierten Festwertspeicher Expired - Lifetime DE69933493T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31010 1998-02-26
US09/031,010 US6185121B1 (en) 1998-02-26 1998-02-26 Access structure for high density read only memory

Publications (2)

Publication Number Publication Date
DE69933493D1 true DE69933493D1 (de) 2006-11-23
DE69933493T2 DE69933493T2 (de) 2007-03-15

Family

ID=21857187

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933493T Expired - Lifetime DE69933493T2 (de) 1998-02-26 1999-02-16 Zugriffsstruktur für hochintegrierten Festwertspeicher

Country Status (5)

Country Link
US (2) US6185121B1 (de)
EP (1) EP0939444B1 (de)
JP (1) JPH11317501A (de)
KR (1) KR100605390B1 (de)
DE (1) DE69933493T2 (de)

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US6567287B2 (en) 2001-03-21 2003-05-20 Matrix Semiconductor, Inc. Memory device with row and column decoder circuits arranged in a checkerboard pattern under a plurality of memory arrays
US6856572B2 (en) * 2000-04-28 2005-02-15 Matrix Semiconductor, Inc. Multi-headed decoder structure utilizing memory array line driver with dual purpose driver device
US6522594B1 (en) * 2001-03-21 2003-02-18 Matrix Semiconductor, Inc. Memory array incorporating noise detection line
US6717215B2 (en) * 2001-06-21 2004-04-06 Hewlett-Packard Development Company, L.P. Memory structures
US6458676B1 (en) 2001-06-25 2002-10-01 Lucent Technologies Inc. Method of varying the resistance along a conductive layer
US6542397B2 (en) 2001-06-25 2003-04-01 Lucent Technologies Inc. Read only memory structure
US20030041165A1 (en) * 2001-08-24 2003-02-27 Spencer Percy L. System and method for group video teleconferencing using a bandwidth optimizer
US6549447B1 (en) * 2001-10-31 2003-04-15 Peter Fricke Memory cell structure
US6879525B2 (en) * 2001-10-31 2005-04-12 Hewlett-Packard Development Company, L.P. Feedback write method for programmable memory
US6534841B1 (en) 2001-12-14 2003-03-18 Hewlett-Packard Company Continuous antifuse material in memory structure
US6703652B2 (en) 2002-01-16 2004-03-09 Hewlett-Packard Development Company, L.P. Memory structure and method making
US6559516B1 (en) 2002-01-16 2003-05-06 Hewlett-Packard Development Company Antifuse structure and method of making
US6649505B2 (en) * 2002-02-04 2003-11-18 Matrix Semiconductor, Inc. Method for fabricating and identifying integrated circuits and self-identifying integrated circuits
US20030183868A1 (en) * 2002-04-02 2003-10-02 Peter Fricke Memory structures
US6643159B2 (en) 2002-04-02 2003-11-04 Hewlett-Packard Development Company, L.P. Cubic memory array
US6967350B2 (en) * 2002-04-02 2005-11-22 Hewlett-Packard Development Company, L.P. Memory structures
US6661691B2 (en) 2002-04-02 2003-12-09 Hewlett-Packard Development Company, L.P. Interconnection structure and methods
US6940085B2 (en) 2002-04-02 2005-09-06 Hewlett-Packard Development Company, I.P. Memory structures
US6707087B2 (en) 2002-06-21 2004-03-16 Hewlett-Packard Development Company, L.P. Structure of chalcogenide memory element
CN101515478B (zh) * 2002-09-30 2011-12-21 张国飙 改进的三维只读存储器
US6859410B2 (en) 2002-11-27 2005-02-22 Matrix Semiconductor, Inc. Tree decoder structure particularly well-suited to interfacing array lines having extremely small layout pitch
US6954394B2 (en) * 2002-11-27 2005-10-11 Matrix Semiconductor, Inc. Integrated circuit and method for selecting a set of memory-cell-layer-dependent or temperature-dependent operating conditions
US7233024B2 (en) * 2003-03-31 2007-06-19 Sandisk 3D Llc Three-dimensional memory device incorporating segmented bit line memory array
US6879505B2 (en) 2003-03-31 2005-04-12 Matrix Semiconductor, Inc. Word line arrangement having multi-layer word line segments for three-dimensional memory array
US6822903B2 (en) * 2003-03-31 2004-11-23 Matrix Semiconductor, Inc. Apparatus and method for disturb-free programming of passive element memory cells
US6747890B1 (en) * 2003-04-02 2004-06-08 International Business Machines Corporation Gain cell structure with deep trench capacitor
CN100539154C (zh) * 2003-04-03 2009-09-09 惠普开发有限公司 立体存储器阵列及制作立体存储器阵列的方法
US6858883B2 (en) 2003-06-03 2005-02-22 Hewlett-Packard Development Company, L.P. Partially processed tunnel junction control element
US7134006B2 (en) * 2003-06-03 2006-11-07 Gateway Inc. Method and system for changing software access level within or outside a host protected area
US7057958B2 (en) * 2003-09-30 2006-06-06 Sandisk Corporation Method and system for temperature compensation for memory cells with temperature-dependent behavior
US7474000B2 (en) * 2003-12-05 2009-01-06 Sandisk 3D Llc High density contact to relaxed geometry layers
US7082052B2 (en) 2004-02-06 2006-07-25 Unity Semiconductor Corporation Multi-resistive state element with reactive metal
US20060171200A1 (en) 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7218570B2 (en) * 2004-12-17 2007-05-15 Sandisk 3D Llc Apparatus and method for memory operations using address-dependent conditions
US7286439B2 (en) * 2004-12-30 2007-10-23 Sandisk 3D Llc Apparatus and method for hierarchical decoding of dense memory arrays using multiple levels of multiple-headed decoders
US7298665B2 (en) * 2004-12-30 2007-11-20 Sandisk 3D Llc Dual-mode decoder circuit, integrated circuit memory array incorporating same, and related methods of operation
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US7054219B1 (en) 2005-03-31 2006-05-30 Matrix Semiconductor, Inc. Transistor layout configuration for tight-pitched memory array lines
US7272052B2 (en) * 2005-03-31 2007-09-18 Sandisk 3D Llc Decoding circuit for non-binary groups of memory line drivers
US7142471B2 (en) * 2005-03-31 2006-11-28 Sandisk 3D Llc Method and apparatus for incorporating block redundancy in a memory array
US7359279B2 (en) * 2005-03-31 2008-04-15 Sandisk 3D Llc Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers
KR101501740B1 (ko) * 2008-06-03 2015-03-11 삼성전자주식회사 적층 구조를 가지는 반도체 메모리 장치
US7283414B1 (en) 2006-05-24 2007-10-16 Sandisk 3D Llc Method for improving the precision of a temperature-sensor circuit
EP2037461A3 (de) * 2007-09-12 2009-10-28 Samsung Electronics Co., Ltd. Mehrschichtige Speichervorrichtungen
US8638584B2 (en) * 2010-02-02 2014-01-28 Unity Semiconductor Corporation Memory architectures and techniques to enhance throughput for cross-point arrays
TW201207852A (en) * 2010-04-05 2012-02-16 Mosaid Technologies Inc Semiconductor memory device having a three-dimensional structure
JP2012059830A (ja) 2010-09-07 2012-03-22 Toshiba Corp 半導体記憶装置
KR101657905B1 (ko) * 2015-08-25 2016-09-30 성균관대학교산학협력단 메모리 장치 및 메모리 장치 제조 방법

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US4500905A (en) * 1981-09-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Stacked semiconductor device with sloping sides
US4736342A (en) * 1985-11-15 1988-04-05 Texas Instruments Incorporated Method of forming a field plate in a high voltage array
JP2508247B2 (ja) * 1989-03-20 1996-06-19 三菱電機株式会社 マスクｒｏｍの製造方法
JP3109537B2 (ja) * 1991-07-12 2000-11-20 日本電気株式会社 読み出し専用半導体記憶装置
US5561622A (en) * 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure
US5432730A (en) * 1993-12-20 1995-07-11 Waferscale Integration, Inc. Electrically programmable read only memory array
US5408428A (en) * 1994-01-03 1995-04-18 Motorola, Inc. Programmable bit cell
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
US5847442A (en) * 1996-11-12 1998-12-08 Lucent Technologies Inc. Structure for read-only-memory

Also Published As

Publication number Publication date
DE69933493T2 (de) 2007-03-15
KR100605390B1 (ko) 2006-08-02
JPH11317501A (ja) 1999-11-16
EP0939444A3 (de) 2001-04-04
US6292384B1 (en) 2001-09-18
US6185121B1 (en) 2001-02-06
EP0939444B1 (de) 2006-10-11
KR19990072887A (ko) 1999-09-27
EP0939444A2 (de) 1999-09-01

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