DE69831728D1 - Vorspannungsvorrichtung für integrierte Speicherzellenstruktur - Google Patents

Vorspannungsvorrichtung für integrierte Speicherzellenstruktur

Info

Publication number
DE69831728D1
DE69831728D1 DE69831728T DE69831728T DE69831728D1 DE 69831728 D1 DE69831728 D1 DE 69831728D1 DE 69831728 T DE69831728 T DE 69831728T DE 69831728 T DE69831728 T DE 69831728T DE 69831728 D1 DE69831728 D1 DE 69831728D1
Authority
DE
Germany
Prior art keywords
memory cell
cell structure
biasing device
integrated memory
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69831728T
Other languages
English (en)
Inventor
Giovanni Campardo
Stefano Zanardi
Maurizio Branchetti
Stefano Ghezzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69831728D1 publication Critical patent/DE69831728D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69831728T 1998-04-22 1998-04-22 Vorspannungsvorrichtung für integrierte Speicherzellenstruktur Expired - Lifetime DE69831728D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98830238A EP0952615B1 (de) 1998-04-22 1998-04-22 Vorspannungsvorrichtung für integrierte Speicherzellenstruktur

Publications (1)

Publication Number Publication Date
DE69831728D1 true DE69831728D1 (de) 2006-02-09

Family

ID=8236622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69831728T Expired - Lifetime DE69831728D1 (de) 1998-04-22 1998-04-22 Vorspannungsvorrichtung für integrierte Speicherzellenstruktur

Country Status (3)

Country Link
US (2) US6151251A (de)
EP (1) EP0952615B1 (de)
DE (1) DE69831728D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10012105B4 (de) * 2000-03-13 2007-08-23 Infineon Technologies Ag Verfahren zum Auslesen von nichtflüchtigen Halbleiter-Speicheranordnungen
FR2921756B1 (fr) 2007-09-27 2009-12-25 Commissariat Energie Atomique Matrice de pixels dotes de regulateurs de tension.
FR2921788B1 (fr) 2007-10-01 2015-01-02 Commissariat Energie Atomique Dispositif microelectronique a matrice de pixels dote de moyens generateurs de compensation de chute ohmique sur des almentations
CN103109525B (zh) * 2008-10-08 2016-04-06 法国原子能委员会 一种矩阵微电子装置
US9779788B1 (en) * 2015-08-24 2017-10-03 Ambiq Micro, Inc. Sub-threshold enabled flash memory system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4825142A (en) * 1987-06-01 1989-04-25 Texas Instruments Incorporated CMOS substrate charge pump voltage regulator
JP3068291B2 (ja) * 1990-12-12 2000-07-24 新日本製鐵株式会社 半導体記憶装置
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP3522788B2 (ja) * 1992-10-29 2004-04-26 株式会社ルネサステクノロジ 半導体集積回路装置
EP0714099A1 (de) * 1994-11-24 1996-05-29 STMicroelectronics S.r.l. Integrierte CMOS-Schaltung für niedrige Leistungsversorgung und mit geringem Leistungsverlust im Stand-by
JP3162264B2 (ja) * 1995-05-30 2001-04-25 シャープ株式会社 フラッシュメモリの書換え方法

Also Published As

Publication number Publication date
EP0952615B1 (de) 2005-09-28
US6151251A (en) 2000-11-21
US6304490B1 (en) 2001-10-16
EP0952615A1 (de) 1999-10-27

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Legal Events

Date Code Title Description
8332 No legal effect for de