DE69938272D1 - Montierungsstruktur für Photohalbleitervorrichtung - Google Patents

Montierungsstruktur für Photohalbleitervorrichtung

Info

Publication number
DE69938272D1
DE69938272D1 DE69938272T DE69938272T DE69938272D1 DE 69938272 D1 DE69938272 D1 DE 69938272D1 DE 69938272 T DE69938272 T DE 69938272T DE 69938272 T DE69938272 T DE 69938272T DE 69938272 D1 DE69938272 D1 DE 69938272D1
Authority
DE
Germany
Prior art keywords
semiconductor device
mount structure
photo semiconductor
photo
mount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69938272T
Other languages
English (en)
Other versions
DE69938272T2 (de
Inventor
Motoyoshi Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69938272D1 publication Critical patent/DE69938272D1/de
Publication of DE69938272T2 publication Critical patent/DE69938272T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE69938272T 1998-05-15 1999-05-11 Montierungsstruktur für Photohalbleitervorrichtung Expired - Fee Related DE69938272T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13345898 1998-05-15
JP13345898A JP3274647B2 (ja) 1998-05-15 1998-05-15 光半導体素子の実装構造

Publications (2)

Publication Number Publication Date
DE69938272D1 true DE69938272D1 (de) 2008-04-17
DE69938272T2 DE69938272T2 (de) 2008-06-12

Family

ID=15105263

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938272T Expired - Fee Related DE69938272T2 (de) 1998-05-15 1999-05-11 Montierungsstruktur für Photohalbleitervorrichtung

Country Status (4)

Country Link
US (1) US6184560B1 (de)
EP (1) EP0961327B1 (de)
JP (1) JP3274647B2 (de)
DE (1) DE69938272T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520862A (ja) * 1998-07-08 2002-07-09 インフィネオン テクノロジース アクチエンゲゼルシャフト 充填される凹部を材料層内に形成する方法、およびこの方法により形成される集積回路装置
US7042103B2 (en) * 2002-12-30 2006-05-09 Motorola, Inc. Low stress semiconductor die attach
JP3791501B2 (ja) * 2003-02-26 2006-06-28 セイコーエプソン株式会社 回路基板、半導体装置、半導体製造装置、回路基板の製造方法および半導体装置の製造方法
JP2008153502A (ja) * 2006-12-19 2008-07-03 Sony Corp 発光装置、発光装置の製造方法および画像出力装置
JP6110673B2 (ja) * 2012-02-17 2017-04-05 エスアイアイ・セミコンダクタ株式会社 光センサ装置
JP2014216615A (ja) 2013-04-30 2014-11-17 キヤノン株式会社 電子部品の実装方法、回路基板及び画像形成装置
DE102014008839B4 (de) 2014-06-20 2021-09-30 Kunststoff-Zentrum In Leipzig Gemeinnützige Gmbh Dehnungskompensierendes Verbindungselement für ein Mikroelektroniksystem
DE102014008838B4 (de) 2014-06-20 2021-09-30 Kunststoff-Zentrum In Leipzig Gemeinnützige Gmbh Spannungsreduzierendes flexibles Verbindungselement für ein Mikroelektroniksystem
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
JP6520481B2 (ja) * 2015-06-30 2019-05-29 富士電機株式会社 電子部品モジュール
JP7407531B2 (ja) * 2019-07-12 2024-01-04 株式会社ジャパンディスプレイ Ｌｅｄモジュール及びｌｅｄモジュールを含む表示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5035495A (en) 1987-02-27 1991-07-30 Ngk Insulators, Ltd. Optical unit including a substrate and optical element supported on the substrate such that thermal stresses are prevented from being exerted on the optical element
JPH0831654B2 (ja) 1987-11-25 1996-03-27 三菱電機株式会社 半導体レーザ装置用サブマウント
JPH02103987A (ja) 1988-07-22 1990-04-17 Nec Corp 半導体レーザアレイ装置
US5081520A (en) 1989-05-16 1992-01-14 Minolta Camera Kabushiki Kaisha Chip mounting substrate having an integral molded projection and conductive pattern
JP2622029B2 (ja) * 1990-05-18 1997-06-18 株式会社東芝 半導体発光装置
JPH0529389A (ja) 1991-07-22 1993-02-05 Sharp Corp 半導体素子の接続構造
JP3013529B2 (ja) 1991-08-26 2000-02-28 住友化学工業株式会社 ポジ型レジスト組成物
JP2976642B2 (ja) 1991-11-07 1999-11-10 日本電気株式会社 光結合回路
US5249733A (en) 1992-07-16 1993-10-05 At&T Bell Laboratories Solder self-alignment methods
JPH06310617A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp 半導体レーザ素子用サブマウント
JPH07193091A (ja) 1993-12-27 1995-07-28 Sumitomo Electric Ind Ltd 半導体装置
JP3165779B2 (ja) * 1995-07-18 2001-05-14 株式会社トクヤマ サブマウント
JPH09307191A (ja) * 1996-05-15 1997-11-28 Furukawa Electric Co Ltd:The レーザダイオードモジュール
JPH1090576A (ja) 1996-09-17 1998-04-10 Fuji Photo Film Co Ltd 光学部材の固定構造
US5998875A (en) * 1996-12-19 1999-12-07 Telefonaktiebolaget Lm Ericsson Flip-chip type connection with elastic contacts

Also Published As

Publication number Publication date
JP3274647B2 (ja) 2002-04-15
EP0961327B1 (de) 2008-03-05
DE69938272T2 (de) 2008-06-12
US6184560B1 (en) 2001-02-06
JPH11330617A (ja) 1999-11-30
EP0961327A1 (de) 1999-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee