DE69933380D1 - Hermetische In-Situ-Gehäusungsmethode von Mikrosystemen - Google Patents

Hermetische In-Situ-Gehäusungsmethode von Mikrosystemen

Info

Publication number
DE69933380D1
DE69933380D1 DE69933380T DE69933380T DE69933380D1 DE 69933380 D1 DE69933380 D1 DE 69933380D1 DE 69933380 T DE69933380 T DE 69933380T DE 69933380 T DE69933380 T DE 69933380T DE 69933380 D1 DE69933380 D1 DE 69933380D1
Authority
DE
Germany
Prior art keywords
layer
microsystem
metal
metal layer
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69933380T
Other languages
English (en)
Other versions
DE69933380T2 (de
Inventor
Francois Gueissaz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asulab AG
Original Assignee
Asulab AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asulab AG filed Critical Asulab AG
Application granted granted Critical
Publication of DE69933380D1 publication Critical patent/DE69933380D1/de
Publication of DE69933380T2 publication Critical patent/DE69933380T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Auxiliary Devices For And Details Of Packaging Control (AREA)
  • Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)
  • Electroplating Methods And Accessories (AREA)
DE69933380T 1999-12-15 1999-12-15 Verfahren zum hermetischen Einkapseln von Mikrosystemen vor Ort Expired - Lifetime DE69933380T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99125008A EP1108677B1 (de) 1999-12-15 1999-12-15 Hermetische In-Situ-Gehäusungsmethode von Mikrosystemen

Publications (2)

Publication Number Publication Date
DE69933380D1 true DE69933380D1 (de) 2006-11-09
DE69933380T2 DE69933380T2 (de) 2007-08-02

Family

ID=8239618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933380T Expired - Lifetime DE69933380T2 (de) 1999-12-15 1999-12-15 Verfahren zum hermetischen Einkapseln von Mikrosystemen vor Ort

Country Status (7)

Country Link
US (1) US6454160B2 (de)
EP (1) EP1108677B1 (de)
JP (1) JP4777510B2 (de)
KR (1) KR100658264B1 (de)
CN (1) CN1262468C (de)
AT (1) ATE340761T1 (de)
DE (1) DE69933380T2 (de)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby
AU2002313631A1 (en) * 2001-06-08 2002-12-23 The Regents Of The University Of Michigan A circuit encapsulation technique utilizing electroplating
US6771859B2 (en) * 2001-07-24 2004-08-03 3M Innovative Properties Company Self-aligning optical micro-mechanical device package
US6834154B2 (en) 2001-07-24 2004-12-21 3M Innovative Properties Co. Tooling fixture for packaged optical micro-mechanical devices
US6798954B2 (en) 2001-07-24 2004-09-28 3M Innovative Properties Company Packaged optical micro-mechanical device
DE10200869A1 (de) * 2002-01-11 2003-07-31 Infineon Technologies Ag Verfahren zum Erzeugen einer Schutzabdeckung für ein Bauelement
US20030183916A1 (en) * 2002-03-27 2003-10-02 John Heck Packaging microelectromechanical systems
KR20050044799A (ko) * 2002-08-28 2005-05-12 실리콘 라이트 머신즈 코포레이션 비실리콘계 소자용 웨이퍼 레벨의 시일
AU2003286572A1 (en) * 2002-10-23 2004-05-13 Rutgers, The State University Of New Jersey Processes for hermetically packaging wafer level microscopic structures
US20050189621A1 (en) * 2002-12-02 2005-09-01 Cheung Kin P. Processes for hermetically packaging wafer level microscopic structures
US20050250253A1 (en) * 2002-10-23 2005-11-10 Cheung Kin P Processes for hermetically packaging wafer level microscopic structures
DE10256116B4 (de) * 2002-11-29 2005-12-22 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zur Herstellung desselben
US20040166606A1 (en) * 2003-02-26 2004-08-26 David Forehand Low temperature wafer-level micro-encapsulation
DE10316777B4 (de) * 2003-04-11 2005-11-24 Infineon Technologies Ag Verfahren zum Erzeugen einer Schutzabdeckung für ein Bauelement
TWI251712B (en) * 2003-08-15 2006-03-21 Prime View Int Corp Ltd Interference display plate
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
DE10353767B4 (de) * 2003-11-17 2005-09-29 Infineon Technologies Ag Vorrichtung zur Häusung einer mikromechanischen Struktur und Verfahren zur Herstellung derselben
US6946728B2 (en) * 2004-02-19 2005-09-20 Hewlett-Packard Development Company, L.P. System and methods for hermetic sealing of post media-filled MEMS package
KR100575363B1 (ko) * 2004-04-13 2006-05-03 재단법인서울대학교산학협력재단 미소기계소자의 진공 실장방법 및 이 방법에 의해 진공실장된 미소기계소자
US7424198B2 (en) 2004-09-27 2008-09-09 Idc, Llc Method and device for packaging a substrate
US7573547B2 (en) 2004-09-27 2009-08-11 Idc, Llc System and method for protecting micro-structure of display array using spacers in gap within display device
US7701631B2 (en) 2004-09-27 2010-04-20 Qualcomm Mems Technologies, Inc. Device having patterned spacers for backplates and method of making the same
US7368803B2 (en) * 2004-09-27 2008-05-06 Idc, Llc System and method for protecting microelectromechanical systems array using back-plate with non-flat portion
US7668415B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US8124434B2 (en) 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
US7184202B2 (en) 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US7344907B2 (en) * 2004-11-19 2008-03-18 International Business Machines Corporation Apparatus and methods for encapsulating microelectromechanical (MEM) devices on a wafer scale
WO2006081636A1 (en) * 2005-02-04 2006-08-10 Interuniversitair Microelektronica Centrum (Imec) Method for encapsulating a device in a microcavity
JP5014589B2 (ja) * 2005-05-19 2012-08-29 ローム株式会社 Ｍｅｍｓパッケージ
JP5008834B2 (ja) * 2005-05-19 2012-08-22 ローム株式会社 Ｍｅｍｓ素子およびその製造方法
JP4791766B2 (ja) * 2005-05-30 2011-10-12 株式会社東芝 Ｍｅｍｓ技術を使用した半導体装置
US20060273065A1 (en) * 2005-06-02 2006-12-07 The Regents Of The University Of California Method for forming free standing microstructures
FR2888832B1 (fr) * 2005-07-22 2007-08-24 Commissariat Energie Atomique Conditionnement d'un composant electronique
CN100422071C (zh) * 2005-10-27 2008-10-01 中国科学院上海微系统与信息技术研究所 微机械加速度计器件的圆片级封装工艺
DE102005053722B4 (de) 2005-11-10 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Deckelwafer, in der Mikrosystemtechnik einsetzbares Bauelement mit einem solchen Wafer sowie Lötverfahren zum Verbinden entsprechender Bauelement-Teile
CN100445195C (zh) * 2006-01-13 2008-12-24 中国科学院上海微系统与信息技术研究所 一种圆片级微机械器件或光电器件的低温气密性封装方法
FR2897503B1 (fr) * 2006-02-16 2014-06-06 Valeo Sys Controle Moteur Sas Procede de fabrication d'un module electronique par fixation sequentielle des composants et ligne de production correspondante
CN100434354C (zh) * 2006-04-07 2008-11-19 美新半导体（无锡）有限公司 具有y形通孔的圆片级气密性封装工艺
WO2007120885A2 (en) 2006-04-13 2007-10-25 Qualcomm Mems Technologies, Inc. Mems devices and processes for packaging such devices
DE102006031772A1 (de) 2006-07-10 2008-01-17 Robert Bosch Gmbh Verfahren zur Herstellung eines Sensorelements sowie Sensorelement
FR2903678B1 (fr) * 2006-07-13 2008-10-24 Commissariat Energie Atomique Microcomposant encapsule equipe d'au moins un getter
US20080042223A1 (en) * 2006-08-17 2008-02-21 Lu-Lee Liao Microelectromechanical system package and method for making the same
US20080075308A1 (en) * 2006-08-30 2008-03-27 Wen-Chieh Wei Silicon condenser microphone
US20080083957A1 (en) * 2006-10-05 2008-04-10 Wen-Chieh Wei Micro-electromechanical system package
US7894622B2 (en) 2006-10-13 2011-02-22 Merry Electronics Co., Ltd. Microphone
US8851356B1 (en) 2008-02-14 2014-10-07 Metrospec Technology, L.L.C. Flexible circuit board interconnection and methods
US10334735B2 (en) 2008-02-14 2019-06-25 Metrospec Technology, L.L.C. LED lighting systems and methods
US8007286B1 (en) 2008-03-18 2011-08-30 Metrospec Technology, Llc Circuit boards interconnected by overlapping plated through holes portions
US8143631B2 (en) 2008-03-06 2012-03-27 Metrospec Technology Llc Layered structure for use with high power light emitting diode systems
US11266014B2 (en) 2008-02-14 2022-03-01 Metrospec Technology, L.L.C. LED lighting systems and method
US8410720B2 (en) 2008-04-07 2013-04-02 Metrospec Technology, LLC. Solid state lighting circuit and controls
US20090323170A1 (en) * 2008-06-30 2009-12-31 Qualcomm Mems Technologies, Inc. Groove on cover plate or substrate
US7875482B2 (en) * 2009-03-19 2011-01-25 Robert Bosch Gmbh Substrate with multiple encapsulated pressures
US8379392B2 (en) 2009-10-23 2013-02-19 Qualcomm Mems Technologies, Inc. Light-based sealing and device packaging
FR2955999B1 (fr) * 2010-02-04 2012-04-20 Commissariat Energie Atomique Procede d'encapsulation d'un microcomposant par un capot renforce mecaniquement
JP5204171B2 (ja) * 2010-08-25 2013-06-05 株式会社東芝 電気部品およびその製造方法
FR2970111B1 (fr) 2011-01-03 2013-01-11 Commissariat Energie Atomique Procede de fabrication d'un micro-contacteur actionnable par un champ magnetique
CN102738093A (zh) * 2011-04-06 2012-10-17 苏州文迪光电科技有限公司 陶瓷基片
CN102303842A (zh) * 2011-08-15 2012-01-04 上海先进半导体制造股份有限公司 与半导体工艺兼容的盖板预封装方法
DE102011112476A1 (de) * 2011-09-05 2013-03-07 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
EP2597067A1 (de) * 2011-11-23 2013-05-29 Micro Crystal AG Herstellungsverfahren einer Vorrichtung zur Verkapselung
SE537584C2 (sv) * 2011-12-15 2015-06-30 Silex Microsystems Ab Tunnfilmskapsling
CN103072941B (zh) * 2013-01-14 2015-09-23 北京大学 基于表面牺牲层工艺的mems器件自封装制备方法
US10196745B2 (en) 2014-10-31 2019-02-05 General Electric Company Lid and method for sealing a non-magnetic package
US10131540B2 (en) 2015-03-12 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method to mitigate soldering offset for wafer-level chip scale package (WLCSP) applications
MX2017009322A (es) * 2015-03-16 2017-11-08 Halliburton Energy Services Inc Formacion geometrica de etiquetas de radiofrecuencia utilizadas en operaciones de cementacion de pozos.
DE102017125140B4 (de) * 2017-10-26 2021-06-10 Infineon Technologies Ag Verfahren zum Herstellen eines hermetisch abgedichteten Gehäuses mit einem Halbleiterbauteil
US10849200B2 (en) 2018-09-28 2020-11-24 Metrospec Technology, L.L.C. Solid state lighting circuit with current bias and method of controlling thereof
US11626343B2 (en) 2018-10-30 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with enhanced thermal dissipation and method for making the same
CN111792621B (zh) * 2020-07-06 2024-04-16 中国科学院上海微系统与信息技术研究所 一种圆片级薄膜封装方法及封装器件

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4696851A (en) * 1985-03-25 1987-09-29 Olin Corporation Hybrid and multi-layer circuitry
US4727633A (en) * 1985-08-08 1988-03-01 Tektronix, Inc. Method of securing metallic members together
US4661886A (en) * 1985-10-03 1987-04-28 Burroughs Corporation Magnetically sealed multichip integrated circuit package
US5829128A (en) * 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
JP2631287B2 (ja) * 1987-06-30 1997-07-16 日本メクトロン 株式会社 混成多層回路基板の製造法
US5196377A (en) * 1990-12-20 1993-03-23 Cray Research, Inc. Method of fabricating silicon-based carriers
US5336928A (en) * 1992-09-18 1994-08-09 General Electric Company Hermetically sealed packaged electronic system
EP0683921B1 (de) * 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Mikrostrukturen und einzelmask, einkristall-herstellungsverfahren
US5651900A (en) * 1994-03-07 1997-07-29 The Regents Of The University Of California Microfabricated particle filter
US5548099A (en) * 1994-09-13 1996-08-20 Martin Marietta Corporation Method for making an electronics module having air bridge protection without large area ablation
US5535296A (en) * 1994-09-28 1996-07-09 Optobahn Corporation Integrated optoelectronic coupling and connector
WO2004100260A1 (ja) * 1995-05-19 2004-11-18 Kouta Noda 高密度多層プリント配線版、マルチチップキャリア及び半導体パッケージ
JPH09148467A (ja) * 1995-11-24 1997-06-06 Murata Mfg Co Ltd 動作素子の真空封止の構造およびその製造方法
US5832585A (en) * 1996-08-13 1998-11-10 National Semiconductor Corporation Method of separating micro-devices formed on a substrate
US5863812A (en) * 1996-09-19 1999-01-26 Vlsi Technology, Inc. Process for manufacturing a multi layer bumped semiconductor device
JP3959763B2 (ja) * 1996-11-19 2007-08-15 Ｔｄｋ株式会社 微小機械素子の製造方法
JPH10148643A (ja) * 1996-11-19 1998-06-02 Tdk Corp 加速度センサ及びその製造方法
FR2770339B1 (fr) * 1997-10-27 2003-06-13 Commissariat Energie Atomique Structure munie de contacts electriques formes a travers le substrat de cette structure et procede d'obtention d'une telle structure
TW421980B (en) * 1997-12-22 2001-02-11 Citizen Watch Co Ltd Electronic component device, its manufacturing process, and collective circuits
US6164837A (en) * 1998-12-30 2000-12-26 Mcdonnell Douglas Corporation Integrated microelectromechanical alignment and locking apparatus and method for fiber optic module manufacturing
US6300168B1 (en) * 1999-01-07 2001-10-09 Sony Corp Method of manufacturing a semiconductor device
US6181569B1 (en) * 1999-06-07 2001-01-30 Kishore K. Chakravorty Low cost chip size package and method of fabricating the same
US6356686B1 (en) * 1999-09-03 2002-03-12 International Business Machines Corporation Optoelectronic device encapsulant

Also Published As

Publication number Publication date
CN1305944A (zh) 2001-08-01
EP1108677A1 (de) 2001-06-20
ATE340761T1 (de) 2006-10-15
DE69933380T2 (de) 2007-08-02
CN1262468C (zh) 2006-07-05
KR20010077941A (ko) 2001-08-20
US6454160B2 (en) 2002-09-24
JP4777510B2 (ja) 2011-09-21
KR100658264B1 (ko) 2006-12-14
JP2001237334A (ja) 2001-08-31
US20010004085A1 (en) 2001-06-21
EP1108677B1 (de) 2006-09-27

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