DE69930238D1 - Zeilendekodierer für nichtflüchtigen Speicher zur wahlfreien positiven und negativen Vorspannungseinstellung von Wortleitungen - Google Patents

Zeilendekodierer für nichtflüchtigen Speicher zur wahlfreien positiven und negativen Vorspannungseinstellung von Wortleitungen

Info

Publication number
DE69930238D1
DE69930238D1 DE69930238T DE69930238T DE69930238D1 DE 69930238 D1 DE69930238 D1 DE 69930238D1 DE 69930238 T DE69930238 T DE 69930238T DE 69930238 T DE69930238 T DE 69930238T DE 69930238 D1 DE69930238 D1 DE 69930238D1
Authority
DE
Germany
Prior art keywords
volatile memory
word lines
row decoder
negative bias
bias adjustment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69930238T
Other languages
English (en)
Inventor
Rino Micheloni
Giovanni Campardo
Ohba
Marcello Carrera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69930238D1 publication Critical patent/DE69930238D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
DE69930238T 1999-06-17 1999-06-17 Zeilendekodierer für nichtflüchtigen Speicher zur wahlfreien positiven und negativen Vorspannungseinstellung von Wortleitungen Expired - Lifetime DE69930238D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830378A EP1061525B1 (de) 1999-06-17 1999-06-17 Zeilendekodierer für nichtflüchtigen Speicher zur wahlfreien positiven und negativen Vorspannungseinstellung von Wortleitungen

Publications (1)

Publication Number Publication Date
DE69930238D1 true DE69930238D1 (de) 2006-05-04

Family

ID=8243457

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930238T Expired - Lifetime DE69930238D1 (de) 1999-06-17 1999-06-17 Zeilendekodierer für nichtflüchtigen Speicher zur wahlfreien positiven und negativen Vorspannungseinstellung von Wortleitungen

Country Status (4)

Country Link
US (1) US6356481B1 (de)
EP (1) EP1061525B1 (de)
JP (1) JP2001035179A (de)
DE (1) DE69930238D1 (de)

Cited By (1)

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CN109584921A (zh) * 2013-10-31 2019-04-05 爱思开海力士有限公司 半导体存储器件及其擦除方法

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US6438032B1 (en) * 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction
US6477091B2 (en) * 2001-03-30 2002-11-05 Intel Corporation Method, apparatus, and system to enhance negative voltage switching
EP1265252A1 (de) 2001-06-05 2002-12-11 STMicroelectronics S.r.l. Ein Verfahren zur sektorweisen Löschung und Löschverifikation für einen nichtflüchtigen Flash EEPROM-Speicher
EP1434233B1 (de) * 2001-12-28 2018-01-24 Micron Technology, Inc. Leistungsversorgungsschaltungsstruktur für einen Zeilendekodierer einer nichtflüchtigen Multibitspeichervorrichtung
TWI259952B (en) * 2002-01-31 2006-08-11 Macronix Int Co Ltd Data erase method of flash memory
US6621745B1 (en) 2002-06-18 2003-09-16 Atmel Corporation Row decoder circuit for use in programming a memory device
KR100474200B1 (ko) * 2002-07-18 2005-03-10 주식회사 하이닉스반도체 플래시 메모리의 로우 디코더 및 이를 이용한 플래시메모리 셀의 소거 방법
KR100481857B1 (ko) 2002-08-14 2005-04-11 삼성전자주식회사 레이아웃 면적을 줄이고 뱅크 마다 독립적인 동작을수행할 수 있는 디코더를 갖는 플레쉬 메모리 장치
US6859084B2 (en) * 2002-08-19 2005-02-22 Elixent Ltd. Low-power voltage modulation circuit for pass devices
US6889037B2 (en) * 2002-08-20 2005-05-03 Broadcom Corporation Reducing active mixer flicker noise
US7339822B2 (en) * 2002-12-06 2008-03-04 Sandisk Corporation Current-limited latch
US6946903B2 (en) * 2003-07-28 2005-09-20 Elixent Limited Methods and systems for reducing leakage current in semiconductor circuits
US7319616B2 (en) * 2003-11-13 2008-01-15 Intel Corporation Negatively biasing deselected memory cells
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
US7283398B1 (en) * 2004-05-04 2007-10-16 Spansion Llc Method for minimizing false detection of states in flash memory devices
US7038945B2 (en) * 2004-05-07 2006-05-02 Micron Technology, Inc. Flash memory device with improved programming performance
US20070076512A1 (en) * 2005-09-30 2007-04-05 Castro Hernan A Three transistor wordline decoder
KR100781977B1 (ko) * 2006-11-02 2007-12-06 삼성전자주식회사 불휘발성 메모리 장치에서의 디코더 및 그에 의한 디코딩방법
KR100781980B1 (ko) * 2006-11-02 2007-12-06 삼성전자주식회사 불휘발성 메모리 장치에서의 디코더 및 그에 의한 디코딩방법
KR100965072B1 (ko) * 2007-10-10 2010-06-21 주식회사 하이닉스반도체 불휘발성 메모리 장치의 프로그램 방법
KR100977731B1 (ko) * 2008-12-04 2010-08-24 주식회사 하이닉스반도체 반도체 메모리 장치의 네거티브 워드라인 전압 발생기
US8120984B2 (en) * 2010-03-23 2012-02-21 Ememory Technology Inc. High-voltage selecting circuit which can generate an output voltage without a voltage drop
US8482987B2 (en) * 2010-09-02 2013-07-09 Macronix International Co., Ltd. Method and apparatus for the erase suspend operation
JP5908803B2 (ja) * 2012-06-29 2016-04-26 株式会社フローディア 不揮発性半導体記憶装置
US9236102B2 (en) * 2012-10-12 2016-01-12 Micron Technology, Inc. Apparatuses, circuits, and methods for biasing signal lines
US8737137B1 (en) 2013-01-22 2014-05-27 Freescale Semiconductor, Inc. Flash memory with bias voltage for word line/row driver
US9042190B2 (en) 2013-02-25 2015-05-26 Micron Technology, Inc. Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
US9672875B2 (en) 2014-01-27 2017-06-06 Micron Technology, Inc. Methods and apparatuses for providing a program voltage responsive to a voltage determination
US9224486B1 (en) 2014-06-20 2015-12-29 Freescale Semiconductor, Inc. Control gate driver for use with split gate memory cells
ITUB20151112A1 (it) * 2015-05-27 2016-11-27 St Microelectronics Srl Dispositivo di memoria non-volatile e corrispondente metodo di funzionamento con riduzione degli stress
US9449703B1 (en) 2015-06-09 2016-09-20 Freescale Semiconductor, Inc. Systems and methods for driving a control gate with a select gate signal in a split-gate nonvolatile memory cell
CN116633331B (zh) * 2023-07-21 2023-10-20 成都铭科思微电子技术有限责任公司 一种可切换正负压互补输出的开关电路

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Publication number Priority date Publication date Assignee Title
EP0797213B1 (de) * 1990-09-25 2002-08-28 Kabushiki Kaisha Toshiba Nichtflüchtiger Halbleiterspeicher
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
JP3647869B2 (ja) * 1995-01-26 2005-05-18 マクロニクス インターナショナル カンパニイ リミテッド プラス及びマイナス電圧モードを有するデコードされたワードラインドライバ
US6166957A (en) * 1997-10-08 2000-12-26 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device with a level shifter circuit
JP3149427B2 (ja) * 1998-06-29 2001-03-26 日本電気株式会社 不揮発性半導体メモリ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109584921A (zh) * 2013-10-31 2019-04-05 爱思开海力士有限公司 半导体存储器件及其擦除方法
CN109584921B (zh) * 2013-10-31 2023-08-22 爱思开海力士有限公司 半导体存储器件及其擦除方法

Also Published As

Publication number Publication date
US6356481B1 (en) 2002-03-12
EP1061525A1 (de) 2000-12-20
JP2001035179A (ja) 2001-02-09
EP1061525B1 (de) 2006-03-08

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