DE69920792D1 - Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkerbaustein - Google Patents

Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkerbaustein

Info

Publication number
DE69920792D1
DE69920792D1 DE69920792T DE69920792T DE69920792D1 DE 69920792 D1 DE69920792 D1 DE 69920792D1 DE 69920792 T DE69920792 T DE 69920792T DE 69920792 T DE69920792 T DE 69920792T DE 69920792 D1 DE69920792 D1 DE 69920792D1
Authority
DE
Germany
Prior art keywords
power amplifier
frequency power
amplifier circuit
amplifier module
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69920792T
Other languages
English (en)
Other versions
DE69920792T2 (de
Inventor
Hitoshi Ebihara
Masaki Naganuma
Masanobu Kaneko
Fumitaka Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Publication of DE69920792D1 publication Critical patent/DE69920792D1/de
Application granted granted Critical
Publication of DE69920792T2 publication Critical patent/DE69920792T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
DE69920792T 1998-04-10 1999-04-07 Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkermodul Expired - Fee Related DE69920792T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9905398 1998-04-10
JP09905398A JP3668610B2 (ja) 1998-04-10 1998-04-10 高周波電力増幅回路

Publications (2)

Publication Number Publication Date
DE69920792D1 true DE69920792D1 (de) 2004-11-11
DE69920792T2 DE69920792T2 (de) 2006-02-23

Family

ID=14236887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69920792T Expired - Fee Related DE69920792T2 (de) 1998-04-10 1999-04-07 Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkermodul

Country Status (7)

Country Link
US (1) US6249186B1 (de)
EP (1) EP0949754B1 (de)
JP (1) JP3668610B2 (de)
KR (1) KR100527223B1 (de)
DE (1) DE69920792T2 (de)
DK (1) DK0949754T3 (de)
HK (1) HK1021594A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674337B2 (en) * 2000-03-28 2004-01-06 California Institute Of Technology Concurrent multi-band low noise amplifier architecture
US6798313B2 (en) 2001-06-04 2004-09-28 U.S. Monolithics, L.L.C. Monolithic microwave integrated circuit with bondwire and landing zone bias
DE10161743B4 (de) 2001-12-15 2004-08-05 Hüttinger Elektronik GmbH & Co. KG Hochfrequenzanregungsanordnung
US6670850B1 (en) * 2002-06-13 2003-12-30 Linear Technology Corp. Ultra-wideband constant gain CMOS amplifier
US7064611B2 (en) * 2003-04-12 2006-06-20 Chung-Shan Institute Of Science And Technology IDSS RF amplifier
WO2004112241A1 (en) * 2003-06-10 2004-12-23 Kabushiki Kaisha Toshiba High-frequency power amplifier module
US20070003582A1 (en) * 2003-11-25 2007-01-04 Heng Madalene C Medicine for the treatment of acne and for reversing the signs of age and sun damage and method for using same
US7265630B2 (en) * 2003-12-09 2007-09-04 International Business Machines Corporation Millimeter-wave unilateral low-noise amplifier
US20060038632A1 (en) * 2004-08-20 2006-02-23 Dow-Chih Niu Series-parallel resonant matching circuit and broadband amplifier thereof
US9851414B2 (en) 2004-12-21 2017-12-26 Battelle Energy Alliance, Llc Energy storage cell impedance measuring apparatus, methods and related systems
US8868363B2 (en) * 2009-06-11 2014-10-21 Battelle Energy Alliance, Llc Method of estimating pulse response using an impedance spectrum
US8352204B2 (en) * 2004-12-21 2013-01-08 Battelle Energy Alliance, Llc Method of detecting system function by measuring frequency response
US8150643B1 (en) * 2004-12-21 2012-04-03 Battelle Energy Alliance, Llc Method of detecting system function by measuring frequency response
JP2007150419A (ja) * 2005-11-24 2007-06-14 Mitsubishi Electric Corp 電力増幅器
US8076994B2 (en) * 2007-06-22 2011-12-13 Cree, Inc. RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction
US10379168B2 (en) 2007-07-05 2019-08-13 Battelle Energy Alliance, Llc Apparatuses and methods for testing electrochemical cells by measuring frequency response
WO2011140131A1 (en) 2010-05-03 2011-11-10 Battelle Energy Alliance, Llc Crosstalk compensation in analysis of energy storage devices
JP5541114B2 (ja) * 2010-11-25 2014-07-09 三菱電機株式会社 電力増幅器とそれを用いたｍｍｉｃ
US8466747B1 (en) * 2011-04-08 2013-06-18 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US8963645B1 (en) 2011-04-08 2015-02-24 Lockheed Martin Corporation Integrated-circuit amplifier with low temperature rise
US9035702B2 (en) * 2012-03-08 2015-05-19 Kabushiki Kaisha Toshiba Microwave semiconductor amplifier
CN103929132B (zh) * 2014-04-24 2016-12-07 成都锦江电子系统工程有限公司 基于带状线方式的小型大功率微波放大模块
US10345384B2 (en) 2016-03-03 2019-07-09 Battelle Energy Alliance, Llc Device, system, and method for measuring internal impedance of a test battery using frequency response
US10656233B2 (en) 2016-04-25 2020-05-19 Dynexus Technology, Inc. Method of calibrating impedance measurements of a battery
US11054481B2 (en) 2019-03-19 2021-07-06 Battelle Energy Alliance, Llc Multispectral impedance determination under dynamic load conditions
US11979117B2 (en) 2019-03-25 2024-05-07 Mitsubishi Electric Corporation High frequency semiconductor amplifier
US11422102B2 (en) 2020-01-10 2022-08-23 Dynexus Technology, Inc. Multispectral impedance measurements across strings of interconnected cells
US11519969B2 (en) 2020-01-29 2022-12-06 Dynexus Technology, Inc. Cross spectral impedance assessment for cell qualification
US11757419B2 (en) * 2020-02-25 2023-09-12 Smarter Microelectronics (Guang Zhou) Co., Ltd. Radio frequency power amplifier circuit and gain control method
US20220393650A1 (en) * 2021-06-02 2022-12-08 Psemi Corporation Wideband Multi Gain LNA Architecture
JP2023053462A (ja) * 2021-10-01 2023-04-13 住友電気工業株式会社 高周波回路

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3973214A (en) * 1975-01-20 1976-08-03 Alpha Engineering Corporation Circuit to achieve low noise figure
US4342967A (en) * 1980-05-01 1982-08-03 Gte Laboratories Incorporated High voltage, high frequency amplifier
JPH02130008A (ja) * 1988-11-09 1990-05-18 Toshiba Corp 高周波電力増幅回路
JPH0732335B2 (ja) * 1990-11-16 1995-04-10 日本電信電話株式会社 高周波増幅器
US5202649A (en) * 1991-03-20 1993-04-13 Mitsubishi Denki Kabushiki Kaisha Microwave integrated circuit device having impedance matching
US5111157A (en) * 1991-05-01 1992-05-05 General Electric Company Power amplifier for broad band operation at frequencies above one ghz and at decade watt power levels
JPH05299944A (ja) * 1991-05-30 1993-11-12 Nec Corp Ｒｆ電力増幅器
JP2643662B2 (ja) * 1991-07-08 1997-08-20 三菱電機株式会社 高出力電界効果トランジスタ増幅器
US5276406A (en) * 1992-02-13 1994-01-04 Trontech, Inc. Low noise wide dynamic range amplifiers
JPH05315855A (ja) 1992-05-07 1993-11-26 Nec Corp 高周波電力増幅器
DE69321921T2 (de) * 1992-12-03 1999-05-27 Koninkl Philips Electronics Nv In Kaskadenschaltung verwendbare kompakte Mikrowellenverstärkerschaltung
US5339047A (en) * 1993-02-18 1994-08-16 The United States Of America As Represented By The Secretary Of The Army X-band bipolar junction transistor amplifier
JPH07202585A (ja) 1993-12-28 1995-08-04 Nec Corp 高周波電力増幅回路
US5546049A (en) * 1995-03-31 1996-08-13 Hughes Aircraft Company Frequency scalable pre-matched transistor
US5717249A (en) * 1995-04-05 1998-02-10 Matsushita Electronics Corporation RF power amplifying circuit device
JP3515854B2 (ja) * 1995-04-05 2004-04-05 松下電器産業株式会社 高周波電力増幅回路装置
JPH09199956A (ja) 1995-10-13 1997-07-31 Matsushita Electron Corp 高周波電力増幅器
JPH09162657A (ja) 1995-12-12 1997-06-20 Toshiba Corp マイクロ波電力増幅回路
US5796165A (en) * 1996-03-19 1998-08-18 Matsushita Electronics Corporation High-frequency integrated circuit device having a multilayer structure
JPH1056341A (ja) * 1996-08-09 1998-02-24 Nec Corp 電力増幅装置
JP3336868B2 (ja) * 1996-08-09 2002-10-21 株式会社村田製作所 周波数の異なる複数の信号に整合する高周波増幅器
JP3515886B2 (ja) * 1997-09-29 2004-04-05 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US6249186B1 (en) 2001-06-19
JPH11298263A (ja) 1999-10-29
KR100527223B1 (ko) 2005-11-08
EP0949754B1 (de) 2004-10-06
EP0949754A2 (de) 1999-10-13
EP0949754A3 (de) 2002-07-24
HK1021594A1 (en) 2000-06-16
JP3668610B2 (ja) 2005-07-06
DK0949754T3 (da) 2004-11-15
KR19990083035A (ko) 1999-11-25
DE69920792T2 (de) 2006-02-23

Similar Documents

Publication Publication Date Title
DE69920792D1 (de) Hochfrequenz-Leistungsverstärkerschaltung und Hochfrequenz-Leistungsverstärkerbaustein
DE69821069D1 (de) Leistungsteilungs-/-addierschaltung, Hochleistungsverstärker und Symmetrierschaltung
EE9900618A (et) Impedantssobitusahel võimsusvõimendi jaoks
DE69942992D1 (de) Leistungsverstärker mit Überwachungsfunktion und Schaltungsschutz
DE69908319D1 (de) Stromversorgungsschaltung
DE69930780D1 (de) Leistungsverstärker
BR9700775A (pt) Circuito e processo de amplificação de potência
NO20006602D0 (no) Forsterkerkrets
DE60024940D1 (de) Zweiband-Verstärkungsschaltung und Hochfrequenempfangsteil
DE69931543D1 (de) Leistungsverstärker
DE60124448D1 (de) Hochfrequenzschaltung mit Verstärkerzelleneinheit hoher Ausgangsleistung und Verstärkerzelleneinheit niedriger Ausgangsleistung
DE69907548D1 (de) Hochfrequenzleistungsverstärker
DE69508653D1 (de) Hochfrequenzleistungsverstärker
DE69922744D1 (de) Hochfrequenzschaltungsanordnung und Kommunikationsgerät
DE69813049D1 (de) Hochfrequenzleistungsverstärker
DE69726058D1 (de) Verstärkerschaltung und mehrstufige Verstärkerschaltung
DE69425344T2 (de) Halbleiterintegrierte Leistungsverstärkerschaltung
TR200002709A3 (tr) Güç çevirme devresi
FI964878A0 (fi) Matalatehoinen magnetometripiiri
DE69929497D1 (de) Spannungsversorgungsschaltung
DE60038854D1 (de) Hochfrequenzschaltungsmodul und Kommunikationseinrichtung
FI20000946A0 (fi) Suurtaajuustehovahvistin
DE59805950D1 (de) Leistungsendstufenschaltung mit PWM-Betrieb und Dauereinschaltbetrieb
DE69833619D1 (de) Leistungsverstärkervorrichtung
DE69839391D1 (de) Leitpaste und nichtreziproke schaltungselemente damit

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee