HK1021594A1 - High-frequency power amplifier circuit and high-frequency power amplifier module. - Google Patents
High-frequency power amplifier circuit and high-frequency power amplifier module.Info
- Publication number
- HK1021594A1 HK1021594A1 HK00100352A HK00100352A HK1021594A1 HK 1021594 A1 HK1021594 A1 HK 1021594A1 HK 00100352 A HK00100352 A HK 00100352A HK 00100352 A HK00100352 A HK 00100352A HK 1021594 A1 HK1021594 A1 HK 1021594A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- power amplifier
- frequency power
- amplifier circuit
- amplifier module
- module
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP09905398A JP3668610B2 (ja) | 1998-04-10 | 1998-04-10 | 高周波電力増幅回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1021594A1 true HK1021594A1 (en) | 2000-06-16 |
Family
ID=14236887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK00100352A HK1021594A1 (en) | 1998-04-10 | 2000-01-20 | High-frequency power amplifier circuit and high-frequency power amplifier module. |
Country Status (7)
Country | Link |
---|---|
US (1) | US6249186B1 (de) |
EP (1) | EP0949754B1 (de) |
JP (1) | JP3668610B2 (de) |
KR (1) | KR100527223B1 (de) |
DE (1) | DE69920792T2 (de) |
DK (1) | DK0949754T3 (de) |
HK (1) | HK1021594A1 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674337B2 (en) * | 2000-03-28 | 2004-01-06 | California Institute Of Technology | Concurrent multi-band low noise amplifier architecture |
US6798313B2 (en) | 2001-06-04 | 2004-09-28 | U.S. Monolithics, L.L.C. | Monolithic microwave integrated circuit with bondwire and landing zone bias |
DE10161743B4 (de) | 2001-12-15 | 2004-08-05 | Hüttinger Elektronik GmbH & Co. KG | Hochfrequenzanregungsanordnung |
US6670850B1 (en) * | 2002-06-13 | 2003-12-30 | Linear Technology Corp. | Ultra-wideband constant gain CMOS amplifier |
US7064611B2 (en) * | 2003-04-12 | 2006-06-20 | Chung-Shan Institute Of Science And Technology | IDSS RF amplifier |
WO2004112241A1 (en) * | 2003-06-10 | 2004-12-23 | Kabushiki Kaisha Toshiba | High-frequency power amplifier module |
US20070003582A1 (en) * | 2003-11-25 | 2007-01-04 | Heng Madalene C | Medicine for the treatment of acne and for reversing the signs of age and sun damage and method for using same |
US7265630B2 (en) * | 2003-12-09 | 2007-09-04 | International Business Machines Corporation | Millimeter-wave unilateral low-noise amplifier |
US20060038632A1 (en) * | 2004-08-20 | 2006-02-23 | Dow-Chih Niu | Series-parallel resonant matching circuit and broadband amplifier thereof |
US9851414B2 (en) | 2004-12-21 | 2017-12-26 | Battelle Energy Alliance, Llc | Energy storage cell impedance measuring apparatus, methods and related systems |
US8868363B2 (en) * | 2009-06-11 | 2014-10-21 | Battelle Energy Alliance, Llc | Method of estimating pulse response using an impedance spectrum |
US8352204B2 (en) * | 2004-12-21 | 2013-01-08 | Battelle Energy Alliance, Llc | Method of detecting system function by measuring frequency response |
US8150643B1 (en) * | 2004-12-21 | 2012-04-03 | Battelle Energy Alliance, Llc | Method of detecting system function by measuring frequency response |
JP2007150419A (ja) * | 2005-11-24 | 2007-06-14 | Mitsubishi Electric Corp | 電力増幅器 |
US8076994B2 (en) * | 2007-06-22 | 2011-12-13 | Cree, Inc. | RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction |
US10379168B2 (en) | 2007-07-05 | 2019-08-13 | Battelle Energy Alliance, Llc | Apparatuses and methods for testing electrochemical cells by measuring frequency response |
WO2011140131A1 (en) | 2010-05-03 | 2011-11-10 | Battelle Energy Alliance, Llc | Crosstalk compensation in analysis of energy storage devices |
JP5541114B2 (ja) * | 2010-11-25 | 2014-07-09 | 三菱電機株式会社 | 電力増幅器とそれを用いたmmic |
US8466747B1 (en) * | 2011-04-08 | 2013-06-18 | Lockheed Martin Corporation | Integrated-circuit amplifier with low temperature rise |
US8963645B1 (en) | 2011-04-08 | 2015-02-24 | Lockheed Martin Corporation | Integrated-circuit amplifier with low temperature rise |
US9035702B2 (en) * | 2012-03-08 | 2015-05-19 | Kabushiki Kaisha Toshiba | Microwave semiconductor amplifier |
CN103929132B (zh) * | 2014-04-24 | 2016-12-07 | 成都锦江电子系统工程有限公司 | 基于带状线方式的小型大功率微波放大模块 |
US10345384B2 (en) | 2016-03-03 | 2019-07-09 | Battelle Energy Alliance, Llc | Device, system, and method for measuring internal impedance of a test battery using frequency response |
US10656233B2 (en) | 2016-04-25 | 2020-05-19 | Dynexus Technology, Inc. | Method of calibrating impedance measurements of a battery |
US11054481B2 (en) | 2019-03-19 | 2021-07-06 | Battelle Energy Alliance, Llc | Multispectral impedance determination under dynamic load conditions |
US11979117B2 (en) | 2019-03-25 | 2024-05-07 | Mitsubishi Electric Corporation | High frequency semiconductor amplifier |
US11422102B2 (en) | 2020-01-10 | 2022-08-23 | Dynexus Technology, Inc. | Multispectral impedance measurements across strings of interconnected cells |
US11519969B2 (en) | 2020-01-29 | 2022-12-06 | Dynexus Technology, Inc. | Cross spectral impedance assessment for cell qualification |
US11757419B2 (en) * | 2020-02-25 | 2023-09-12 | Smarter Microelectronics (Guang Zhou) Co., Ltd. | Radio frequency power amplifier circuit and gain control method |
US20220393650A1 (en) * | 2021-06-02 | 2022-12-08 | Psemi Corporation | Wideband Multi Gain LNA Architecture |
JP2023053462A (ja) * | 2021-10-01 | 2023-04-13 | 住友電気工業株式会社 | 高周波回路 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3973214A (en) * | 1975-01-20 | 1976-08-03 | Alpha Engineering Corporation | Circuit to achieve low noise figure |
US4342967A (en) * | 1980-05-01 | 1982-08-03 | Gte Laboratories Incorporated | High voltage, high frequency amplifier |
JPH02130008A (ja) * | 1988-11-09 | 1990-05-18 | Toshiba Corp | 高周波電力増幅回路 |
JPH0732335B2 (ja) * | 1990-11-16 | 1995-04-10 | 日本電信電話株式会社 | 高周波増幅器 |
US5202649A (en) * | 1991-03-20 | 1993-04-13 | Mitsubishi Denki Kabushiki Kaisha | Microwave integrated circuit device having impedance matching |
US5111157A (en) * | 1991-05-01 | 1992-05-05 | General Electric Company | Power amplifier for broad band operation at frequencies above one ghz and at decade watt power levels |
JPH05299944A (ja) * | 1991-05-30 | 1993-11-12 | Nec Corp | Rf電力増幅器 |
JP2643662B2 (ja) * | 1991-07-08 | 1997-08-20 | 三菱電機株式会社 | 高出力電界効果トランジスタ増幅器 |
US5276406A (en) * | 1992-02-13 | 1994-01-04 | Trontech, Inc. | Low noise wide dynamic range amplifiers |
JPH05315855A (ja) | 1992-05-07 | 1993-11-26 | Nec Corp | 高周波電力増幅器 |
DE69321921T2 (de) * | 1992-12-03 | 1999-05-27 | Koninkl Philips Electronics Nv | In Kaskadenschaltung verwendbare kompakte Mikrowellenverstärkerschaltung |
US5339047A (en) * | 1993-02-18 | 1994-08-16 | The United States Of America As Represented By The Secretary Of The Army | X-band bipolar junction transistor amplifier |
JPH07202585A (ja) | 1993-12-28 | 1995-08-04 | Nec Corp | 高周波電力増幅回路 |
US5546049A (en) * | 1995-03-31 | 1996-08-13 | Hughes Aircraft Company | Frequency scalable pre-matched transistor |
US5717249A (en) * | 1995-04-05 | 1998-02-10 | Matsushita Electronics Corporation | RF power amplifying circuit device |
JP3515854B2 (ja) * | 1995-04-05 | 2004-04-05 | 松下電器産業株式会社 | 高周波電力増幅回路装置 |
JPH09199956A (ja) | 1995-10-13 | 1997-07-31 | Matsushita Electron Corp | 高周波電力増幅器 |
JPH09162657A (ja) | 1995-12-12 | 1997-06-20 | Toshiba Corp | マイクロ波電力増幅回路 |
US5796165A (en) * | 1996-03-19 | 1998-08-18 | Matsushita Electronics Corporation | High-frequency integrated circuit device having a multilayer structure |
JPH1056341A (ja) * | 1996-08-09 | 1998-02-24 | Nec Corp | 電力増幅装置 |
JP3336868B2 (ja) * | 1996-08-09 | 2002-10-21 | 株式会社村田製作所 | 周波数の異なる複数の信号に整合する高周波増幅器 |
JP3515886B2 (ja) * | 1997-09-29 | 2004-04-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
-
1998
- 1998-04-10 JP JP09905398A patent/JP3668610B2/ja not_active Expired - Fee Related
-
1999
- 1999-04-07 DK DK99106877T patent/DK0949754T3/da active
- 1999-04-07 EP EP99106877A patent/EP0949754B1/de not_active Expired - Lifetime
- 1999-04-07 DE DE69920792T patent/DE69920792T2/de not_active Expired - Fee Related
- 1999-04-08 KR KR10-1999-0012264A patent/KR100527223B1/ko not_active IP Right Cessation
- 1999-04-09 US US09/288,558 patent/US6249186B1/en not_active Expired - Fee Related
-
2000
- 2000-01-20 HK HK00100352A patent/HK1021594A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6249186B1 (en) | 2001-06-19 |
JPH11298263A (ja) | 1999-10-29 |
KR100527223B1 (ko) | 2005-11-08 |
DE69920792D1 (de) | 2004-11-11 |
EP0949754B1 (de) | 2004-10-06 |
EP0949754A2 (de) | 1999-10-13 |
EP0949754A3 (de) | 2002-07-24 |
JP3668610B2 (ja) | 2005-07-06 |
DK0949754T3 (da) | 2004-11-15 |
KR19990083035A (ko) | 1999-11-25 |
DE69920792T2 (de) | 2006-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1021594A1 (en) | High-frequency power amplifier circuit and high-frequency power amplifier module. | |
HK1044861A1 (en) | Impedance matching circuit for power amplifier | |
GB2331881B (en) | Low distortion power amplifier | |
HK1021597A1 (en) | Rf circuit module and chassis including amplifier. | |
SG90712A1 (en) | Power amplifier | |
SG98369A1 (en) | Power amplifier | |
HK1040847A1 (en) | Cdma receiving method and circuit. | |
GB2359207B (en) | Linear RF power amplifier and transmitter | |
DE69821069D1 (de) | Leistungsteilungs-/-addierschaltung, Hochleistungsverstärker und Symmetrierschaltung | |
GB9912819D0 (en) | Rf circuit module | |
EP1137151A4 (de) | Stromsparschaltung | |
GB2333669B (en) | High-frequency circuit device | |
GB9705618D0 (en) | Multistag evariablel gain amplifier circuit | |
HK1016759A1 (en) | Power factor improving circuit. | |
EP0680148A3 (de) | Taktschaltung mit niedrigem Verbrauch. | |
EP0622894A3 (en) | Semiconductor power amplifier integrated circuit. | |
GB9705725D0 (en) | Amplifier circuit | |
GB2348060B (en) | Power control circuit and transmitter | |
EP0669710A3 (de) | Verstärkerschaltung mit variabler Verstärkung. | |
GB9809790D0 (en) | Amplifying circuit and method | |
AU1313600A (en) | Efficient solid-state high frequency power amplifier structure | |
AU4326699A (en) | Low-power parallel processor and imager integrated circuit | |
GB9925594D0 (en) | Output circuit | |
GB9906026D0 (en) | An amplifier circuit arrangement | |
EP1306971A4 (de) | Basis-vorspannschaltung und leistungsverstärker mit der basis-vorspannschaltung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20080407 |