DE69910979T2 - Grossflächige feldemissions-bildwiedergabeanordnung und verfahren zur herstellung - Google Patents
Grossflächige feldemissions-bildwiedergabeanordnung und verfahren zur herstellung Download PDFInfo
- Publication number
- DE69910979T2 DE69910979T2 DE69910979T DE69910979T DE69910979T2 DE 69910979 T2 DE69910979 T2 DE 69910979T2 DE 69910979 T DE69910979 T DE 69910979T DE 69910979 T DE69910979 T DE 69910979T DE 69910979 T2 DE69910979 T2 DE 69910979T2
- Authority
- DE
- Germany
- Prior art keywords
- microdots
- fed
- spacers
- specified
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title description 23
- 125000006850 spacer group Chemical group 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 238000000926 separation method Methods 0.000 claims abstract description 12
- VAYOSLLFUXYJDT-RDTXWAMCSA-N Lysergic acid diethylamide Chemical compound C1=CC(C=2[C@H](N(C)C[C@@H](C=2)C(=O)N(CC)CC)C2)=C3C2=CNC3=C1 VAYOSLLFUXYJDT-RDTXWAMCSA-N 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 45
- 238000000605 extraction Methods 0.000 claims description 34
- 239000000126 substance Substances 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 8
- 229910052792 caesium Inorganic materials 0.000 claims description 6
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 230000001427 coherent effect Effects 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 230000006978 adaptation Effects 0.000 claims 1
- 208000016169 Fish-eye disease Diseases 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- QXJJQWWVWRCVQT-UHFFFAOYSA-K calcium;sodium;phosphate Chemical compound [Na+].[Ca+2].[O-]P([O-])([O-])=O QXJJQWWVWRCVQT-UHFFFAOYSA-K 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 229910021357 chromium silicide Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/028—Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/864—Spacers between faceplate and backplate of flat panel cathode ray tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
- H01J9/185—Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
- H01J9/242—Spacers between faceplate and backplate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/863—Spacing members characterised by the form or structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Separation By Low-Temperature Treatments (AREA)
- Luminescent Compositions (AREA)
- Gas-Filled Discharge Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32127 | 1987-03-30 | ||
| US09/032,127 US6255772B1 (en) | 1998-02-27 | 1998-02-27 | Large-area FED apparatus and method for making same |
| PCT/US1999/004382 WO1999044218A1 (en) | 1998-02-27 | 1999-02-26 | Large-area fed apparatus and method for making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69910979D1 DE69910979D1 (de) | 2003-10-09 |
| DE69910979T2 true DE69910979T2 (de) | 2004-07-22 |
Family
ID=21863249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69910979T Expired - Lifetime DE69910979T2 (de) | 1998-02-27 | 1999-02-26 | Grossflächige feldemissions-bildwiedergabeanordnung und verfahren zur herstellung |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US6255772B1 (enExample) |
| EP (1) | EP1057200B1 (enExample) |
| JP (1) | JP4001460B2 (enExample) |
| KR (1) | KR100597056B1 (enExample) |
| AT (1) | ATE249096T1 (enExample) |
| AU (1) | AU2883699A (enExample) |
| DE (1) | DE69910979T2 (enExample) |
| WO (1) | WO1999044218A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007043639A1 (de) * | 2007-09-13 | 2009-04-09 | Siemens Ag | Anordnung zur elektrisch leitenden Verbindung |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255772B1 (en) * | 1998-02-27 | 2001-07-03 | Micron Technology, Inc. | Large-area FED apparatus and method for making same |
| KR100263310B1 (ko) * | 1998-04-02 | 2000-08-01 | 김순택 | 전계 방출용 음극을 갖는 평판 디스플레이와 이의제조방법 |
| US6843697B2 (en) * | 1999-06-25 | 2005-01-18 | Micron Display Technology, Inc. | Black matrix for flat panel field emission displays |
| US6716077B1 (en) * | 2000-05-17 | 2004-04-06 | Micron Technology, Inc. | Method of forming flow-fill structures |
| JP2002033058A (ja) * | 2000-07-14 | 2002-01-31 | Sony Corp | 電界放出型表示装置用の前面板 |
| US6944032B1 (en) * | 2001-04-12 | 2005-09-13 | Rockwell Collins | Interconnect for flat panel displays |
| KR100444506B1 (ko) * | 2001-12-27 | 2004-08-16 | 엘지전자 주식회사 | 전계방출 표시소자의 스페이서 및 그의 형성 및 설치방법 |
| US7005807B1 (en) * | 2002-05-30 | 2006-02-28 | Cdream Corporation | Negative voltage driving of a carbon nanotube field emissive display |
| US7170223B2 (en) * | 2002-07-17 | 2007-01-30 | Hewlett-Packard Development Company, L.P. | Emitter with dielectric layer having implanted conducting centers |
| TWI223307B (en) * | 2003-06-24 | 2004-11-01 | Ind Tech Res Inst | Method of forming spacers on a substrate |
| KR20060059616A (ko) * | 2004-11-29 | 2006-06-02 | 삼성에스디아이 주식회사 | 스페이서를 구비하는 전자방출 표시장치 |
| KR101173859B1 (ko) * | 2006-01-31 | 2012-08-14 | 삼성에스디아이 주식회사 | 스페이서 및 이를 구비한 전자 방출 표시 디바이스 |
| FR2899291B1 (fr) * | 2006-03-31 | 2010-11-12 | Airbus France | Ecrou pour la fixation d'un pare-brise d'aeronef et dispositif de fixation d'un pare-brise d'aeronef incorporant ledit ecrou |
| KR20080079838A (ko) * | 2007-02-28 | 2008-09-02 | 삼성에스디아이 주식회사 | 발광 장치 및 이를 구비한 표시 장치 |
| US7993977B2 (en) * | 2007-07-02 | 2011-08-09 | Micron Technology, Inc. | Method of forming molded standoff structures on integrated circuit devices |
| KR100869804B1 (ko) * | 2007-07-03 | 2008-11-21 | 삼성에스디아이 주식회사 | 발광 장치 및 표시 장치 |
| JP2009076447A (ja) * | 2007-08-27 | 2009-04-09 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
| US20090058257A1 (en) * | 2007-08-28 | 2009-03-05 | Motorola, Inc. | Actively controlled distributed backlight for a liquid crystal display |
| JP2010009988A (ja) * | 2008-06-27 | 2010-01-14 | Canon Inc | 発光スクリーン及び画像表示装置 |
| US8664622B2 (en) * | 2012-04-11 | 2014-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of ion beam source for semiconductor ion implantation |
| WO2015000095A1 (en) | 2013-07-05 | 2015-01-08 | Industrial Technology Research Institute | Flexible display and method for fabricating the same |
| WO2015171936A1 (en) * | 2014-05-08 | 2015-11-12 | Advanced Green Technologies, Llc | Fuel injection systems with enhanced corona burst |
Family Cites Families (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1309423A (en) | 1969-03-14 | 1973-03-14 | Matsushita Electric Industrial Co Ltd | Field-emission cathodes and methods for preparing these cathodes |
| US5614781A (en) * | 1992-04-10 | 1997-03-25 | Candescent Technologies Corporation | Structure and operation of high voltage supports |
| FR2568394B1 (fr) | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
| FR2593953B1 (fr) | 1986-01-24 | 1988-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
| US4857799A (en) | 1986-07-30 | 1989-08-15 | Sri International | Matrix-addressed flat panel display |
| US5160871A (en) | 1989-06-19 | 1992-11-03 | Matsushita Electric Industrial Co., Ltd. | Flat configuration image display apparatus and manufacturing method thereof |
| US5089292A (en) | 1990-07-20 | 1992-02-18 | Coloray Display Corporation | Field emission cathode array coated with electron work function reducing material, and method |
| US5100838A (en) * | 1990-10-04 | 1992-03-31 | Micron Technology, Inc. | Method for forming self-aligned conducting pillars in an (IC) fabrication process |
| US5332627A (en) | 1990-10-30 | 1994-07-26 | Sony Corporation | Field emission type emitter and a method of manufacturing thereof |
| NL9100122A (nl) | 1991-01-25 | 1992-08-17 | Philips Nv | Weergeefinrichting. |
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| US5259719A (en) * | 1991-12-30 | 1993-11-09 | Intelmatec Corporation | Apparatus for transferring disks between a cassette and a pallet |
| JP3021995B2 (ja) | 1992-01-22 | 2000-03-15 | 三菱電機株式会社 | 表示素子 |
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1998
- 1998-02-27 US US09/032,127 patent/US6255772B1/en not_active Expired - Lifetime
-
1999
- 1999-02-26 KR KR1020007009573A patent/KR100597056B1/ko not_active Expired - Fee Related
- 1999-02-26 AT AT99909683T patent/ATE249096T1/de not_active IP Right Cessation
- 1999-02-26 EP EP99909683A patent/EP1057200B1/en not_active Expired - Lifetime
- 1999-02-26 WO PCT/US1999/004382 patent/WO1999044218A1/en not_active Ceased
- 1999-02-26 AU AU28836/99A patent/AU2883699A/en not_active Abandoned
- 1999-02-26 JP JP2000533887A patent/JP4001460B2/ja not_active Expired - Fee Related
- 1999-02-26 DE DE69910979T patent/DE69910979T2/de not_active Expired - Lifetime
-
2001
- 2001-05-30 US US09/867,912 patent/US6495956B2/en not_active Expired - Lifetime
-
2002
- 2002-10-02 US US10/262,747 patent/US7033238B2/en not_active Expired - Fee Related
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2006
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007043639A1 (de) * | 2007-09-13 | 2009-04-09 | Siemens Ag | Anordnung zur elektrisch leitenden Verbindung |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060189244A1 (en) | 2006-08-24 |
| WO1999044218A9 (en) | 2000-07-20 |
| WO1999044218A1 (en) | 1999-09-02 |
| US20030038588A1 (en) | 2003-02-27 |
| US20010054866A1 (en) | 2001-12-27 |
| US6495956B2 (en) | 2002-12-17 |
| JP2002505503A (ja) | 2002-02-19 |
| EP1057200B1 (en) | 2003-09-03 |
| JP4001460B2 (ja) | 2007-10-31 |
| KR100597056B1 (ko) | 2006-07-06 |
| US7462088B2 (en) | 2008-12-09 |
| US6255772B1 (en) | 2001-07-03 |
| DE69910979D1 (de) | 2003-10-09 |
| EP1057200A1 (en) | 2000-12-06 |
| AU2883699A (en) | 1999-09-15 |
| KR20010041434A (ko) | 2001-05-25 |
| US7033238B2 (en) | 2006-04-25 |
| ATE249096T1 (de) | 2003-09-15 |
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