DE69908800D1 - Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung - Google Patents

Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung

Info

Publication number
DE69908800D1
DE69908800D1 DE69908800T DE69908800T DE69908800D1 DE 69908800 D1 DE69908800 D1 DE 69908800D1 DE 69908800 T DE69908800 T DE 69908800T DE 69908800 T DE69908800 T DE 69908800T DE 69908800 D1 DE69908800 D1 DE 69908800D1
Authority
DE
Germany
Prior art keywords
drawing device
oxidation method
continuous oxidation
crystal drawing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69908800T
Other languages
English (en)
Other versions
DE69908800T2 (de
Inventor
D Holder
K Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69908800D1 publication Critical patent/DE69908800D1/de
Application granted granted Critical
Publication of DE69908800T2 publication Critical patent/DE69908800T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69908800T 1998-10-07 1999-09-28 Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung Expired - Fee Related DE69908800T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US167747 1993-12-15
US09/167,747 US6039801A (en) 1998-10-07 1998-10-07 Continuous oxidation process for crystal pulling apparatus
PCT/US1999/022380 WO2000020664A1 (en) 1998-10-07 1999-09-28 Continuous oxidation process for crystal pulling apparatus

Publications (2)

Publication Number Publication Date
DE69908800D1 true DE69908800D1 (de) 2003-07-17
DE69908800T2 DE69908800T2 (de) 2004-04-29

Family

ID=22608654

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69908800T Expired - Fee Related DE69908800T2 (de) 1998-10-07 1999-09-28 Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung

Country Status (8)

Country Link
US (2) US6039801A (de)
EP (1) EP1123426B1 (de)
JP (1) JP2002526377A (de)
KR (1) KR20010079936A (de)
CN (1) CN1208504C (de)
DE (1) DE69908800T2 (de)
TW (1) TW467973B (de)
WO (1) WO2000020664A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6039801A (en) 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
KR100899767B1 (ko) * 2001-09-28 2009-05-27 사무코 테크시부 가부시키가이샤 단결정반도체의 제조장치, 제조방법 및 단결정잉곳
KR20040039012A (ko) * 2002-10-30 2004-05-10 주식회사 실트론 실리콘 잉곳의 성장 장치
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
JP2005289776A (ja) * 2004-04-05 2005-10-20 Canon Inc 結晶製造方法および結晶製造装置
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
JP4730937B2 (ja) * 2004-12-13 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法
CN100415944C (zh) * 2005-12-26 2008-09-03 北京有色金属研究总院 一种清除直拉硅单晶炉内SiO的方法及装置
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
US8790460B2 (en) * 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
JP2012066948A (ja) * 2010-09-21 2012-04-05 Covalent Materials Corp シリコン単結晶引上装置のクリーニング方法
WO2013085907A1 (en) * 2011-12-07 2013-06-13 Praxair Technolgy, Inc. Inert gas recovery and recycle for silicon crystal growth pulling process
KR101528055B1 (ko) * 2013-11-25 2015-06-11 주식회사 엘지실트론 잉곳 성장 장치
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
JPH02263793A (ja) * 1989-04-05 1990-10-26 Nippon Steel Corp 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
JP2888089B2 (ja) * 1992-03-31 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ装置
JP2807609B2 (ja) * 1993-01-28 1998-10-08 三菱マテリアルシリコン株式会社 単結晶の引上装置
JPH09165291A (ja) * 1995-12-14 1997-06-24 Komatsu Electron Metals Co Ltd 単結晶製造方法およびその装置
DE19628851A1 (de) * 1996-07-17 1998-01-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6039801A (en) 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus

Also Published As

Publication number Publication date
KR20010079936A (ko) 2001-08-22
JP2002526377A (ja) 2002-08-20
US6315828B1 (en) 2001-11-13
US6039801A (en) 2000-03-21
CN1208504C (zh) 2005-06-29
WO2000020664A1 (en) 2000-04-13
DE69908800T2 (de) 2004-04-29
EP1123426A1 (de) 2001-08-16
WO2000020664A9 (en) 2000-09-08
CN1322260A (zh) 2001-11-14
TW467973B (en) 2001-12-11
EP1123426B1 (de) 2003-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee