DE69908800D1 - Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung - Google Patents
Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtungInfo
- Publication number
- DE69908800D1 DE69908800D1 DE69908800T DE69908800T DE69908800D1 DE 69908800 D1 DE69908800 D1 DE 69908800D1 DE 69908800 T DE69908800 T DE 69908800T DE 69908800 T DE69908800 T DE 69908800T DE 69908800 D1 DE69908800 D1 DE 69908800D1
- Authority
- DE
- Germany
- Prior art keywords
- drawing device
- oxidation method
- continuous oxidation
- crystal drawing
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US167747 | 1993-12-15 | ||
US09/167,747 US6039801A (en) | 1998-10-07 | 1998-10-07 | Continuous oxidation process for crystal pulling apparatus |
PCT/US1999/022380 WO2000020664A1 (en) | 1998-10-07 | 1999-09-28 | Continuous oxidation process for crystal pulling apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69908800D1 true DE69908800D1 (de) | 2003-07-17 |
DE69908800T2 DE69908800T2 (de) | 2004-04-29 |
Family
ID=22608654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69908800T Expired - Fee Related DE69908800T2 (de) | 1998-10-07 | 1999-09-28 | Kontinuierliches oxidationsverfahren für eine kristallziehungsvorrichtung |
Country Status (8)
Country | Link |
---|---|
US (2) | US6039801A (de) |
EP (1) | EP1123426B1 (de) |
JP (1) | JP2002526377A (de) |
KR (1) | KR20010079936A (de) |
CN (1) | CN1208504C (de) |
DE (1) | DE69908800T2 (de) |
TW (1) | TW467973B (de) |
WO (1) | WO2000020664A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6039801A (en) | 1998-10-07 | 2000-03-21 | Memc Electronic Materials, Inc. | Continuous oxidation process for crystal pulling apparatus |
DE10014650A1 (de) * | 2000-03-24 | 2001-10-04 | Wacker Siltronic Halbleitermat | Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe |
JP4209325B2 (ja) * | 2001-09-28 | 2009-01-14 | Sumco Techxiv株式会社 | 単結晶半導体の製造装置および製造方法 |
KR20040039012A (ko) * | 2002-10-30 | 2004-05-10 | 주식회사 실트론 | 실리콘 잉곳의 성장 장치 |
TWI265217B (en) * | 2002-11-14 | 2006-11-01 | Komatsu Denshi Kinzoku Kk | Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal |
JP2005289776A (ja) * | 2004-04-05 | 2005-10-20 | Canon Inc | 結晶製造方法および結晶製造装置 |
US7141114B2 (en) * | 2004-06-30 | 2006-11-28 | Rec Silicon Inc | Process for producing a crystalline silicon ingot |
JP4730937B2 (ja) * | 2004-12-13 | 2011-07-20 | Sumco Techxiv株式会社 | 半導体単結晶製造装置および製造方法 |
CN100415944C (zh) * | 2005-12-26 | 2008-09-03 | 北京有色金属研究总院 | 一种清除直拉硅单晶炉内SiO的方法及装置 |
DE102006002682A1 (de) * | 2006-01-19 | 2007-08-02 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe |
US8790460B2 (en) * | 2009-05-18 | 2014-07-29 | Empire Technology Development Llc | Formation of silicon sheets by impinging fluid |
JP2012066948A (ja) * | 2010-09-21 | 2012-04-05 | Covalent Materials Corp | シリコン単結晶引上装置のクリーニング方法 |
CN104080957B (zh) * | 2011-12-07 | 2017-05-17 | 普莱克斯技术有限公司 | 用于硅晶体生长拉制方法的惰性气体回收和再循环 |
KR101528055B1 (ko) * | 2013-11-25 | 2015-06-11 | 주식회사 엘지실트론 | 잉곳 성장 장치 |
US10184193B2 (en) | 2015-05-18 | 2019-01-22 | Globalwafers Co., Ltd. | Epitaxy reactor and susceptor system for improved epitaxial wafer flatness |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5037503A (en) * | 1988-05-31 | 1991-08-06 | Osaka Titanium Co., Ltd. | Method for growing silicon single crystal |
JPH02263793A (ja) * | 1989-04-05 | 1990-10-26 | Nippon Steel Corp | 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法 |
JPH0777994B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の酸素濃度コントロール方法及び装置 |
JPH04317493A (ja) * | 1991-04-15 | 1992-11-09 | Nkk Corp | シリコン単結晶の製造装置 |
JP2888089B2 (ja) * | 1992-03-31 | 1999-05-10 | 信越半導体株式会社 | シリコン単結晶引上げ装置 |
JP2807609B2 (ja) * | 1993-01-28 | 1998-10-08 | 三菱マテリアルシリコン株式会社 | 単結晶の引上装置 |
JPH09165291A (ja) * | 1995-12-14 | 1997-06-24 | Komatsu Electron Metals Co Ltd | 単結晶製造方法およびその装置 |
DE19628851A1 (de) * | 1996-07-17 | 1998-01-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
US5904768A (en) * | 1996-10-15 | 1999-05-18 | Memc Electronic Materials, Inc. | Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
US6039801A (en) | 1998-10-07 | 2000-03-21 | Memc Electronic Materials, Inc. | Continuous oxidation process for crystal pulling apparatus |
-
1998
- 1998-10-07 US US09/167,747 patent/US6039801A/en not_active Expired - Lifetime
-
1999
- 1999-09-28 WO PCT/US1999/022380 patent/WO2000020664A1/en not_active Application Discontinuation
- 1999-09-28 DE DE69908800T patent/DE69908800T2/de not_active Expired - Fee Related
- 1999-09-28 EP EP99948481A patent/EP1123426B1/de not_active Expired - Lifetime
- 1999-09-28 KR KR1020017003920A patent/KR20010079936A/ko not_active Application Discontinuation
- 1999-09-28 CN CNB998118168A patent/CN1208504C/zh not_active Expired - Fee Related
- 1999-09-28 JP JP2000574754A patent/JP2002526377A/ja active Pending
- 1999-11-22 TW TW088117313A patent/TW467973B/zh not_active IP Right Cessation
-
2000
- 2000-01-21 US US09/489,481 patent/US6315828B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2000020664A1 (en) | 2000-04-13 |
EP1123426B1 (de) | 2003-06-11 |
TW467973B (en) | 2001-12-11 |
CN1208504C (zh) | 2005-06-29 |
JP2002526377A (ja) | 2002-08-20 |
CN1322260A (zh) | 2001-11-14 |
WO2000020664A9 (en) | 2000-09-08 |
DE69908800T2 (de) | 2004-04-29 |
US6315828B1 (en) | 2001-11-13 |
EP1123426A1 (de) | 2001-08-16 |
KR20010079936A (ko) | 2001-08-22 |
US6039801A (en) | 2000-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |