DE69838422D1 - Auf einem Halbleitersubstrat integrierte Hochspannungs-Widerstandsstruktur - Google Patents

Auf einem Halbleitersubstrat integrierte Hochspannungs-Widerstandsstruktur

Info

Publication number
DE69838422D1
DE69838422D1 DE69838422T DE69838422T DE69838422D1 DE 69838422 D1 DE69838422 D1 DE 69838422D1 DE 69838422 T DE69838422 T DE 69838422T DE 69838422 T DE69838422 T DE 69838422T DE 69838422 D1 DE69838422 D1 DE 69838422D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
voltage resistance
resistance structure
structure integrated
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69838422T
Other languages
English (en)
Inventor
Salvatore Leonardi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69838422D1 publication Critical patent/DE69838422D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/76208—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69838422T 1998-10-23 1998-10-23 Auf einem Halbleitersubstrat integrierte Hochspannungs-Widerstandsstruktur Expired - Lifetime DE69838422D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98830638A EP0996158B9 (de) 1998-10-23 1998-10-23 Auf einem Halbleitersubstrat integrierte Hochspannungs-Widerstandsstruktur

Publications (1)

Publication Number Publication Date
DE69838422D1 true DE69838422D1 (de) 2007-10-25

Family

ID=8236849

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69838422T Expired - Lifetime DE69838422D1 (de) 1998-10-23 1998-10-23 Auf einem Halbleitersubstrat integrierte Hochspannungs-Widerstandsstruktur
DE69937285T Expired - Lifetime DE69937285D1 (de) 1998-10-23 1999-08-26 Monolithisch auf einem Halbleiter integriertes elektronisches Leistungsbauelement mit Strukturen zum Schutz der Ecken mit begrenzter Flächengrösse und zugehöriges Herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69937285T Expired - Lifetime DE69937285D1 (de) 1998-10-23 1999-08-26 Monolithisch auf einem Halbleiter integriertes elektronisches Leistungsbauelement mit Strukturen zum Schutz der Ecken mit begrenzter Flächengrösse und zugehöriges Herstellungsverfahren

Country Status (3)

Country Link
US (2) US6566732B1 (de)
EP (1) EP0996158B9 (de)
DE (2) DE69838422D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10338689B4 (de) * 2003-08-22 2007-03-29 Infineon Technologies Ag Widerstandsbauelement und Verfahren zu dessen Abgleich
CA2533225C (en) 2006-01-19 2016-03-22 Technologies Ltrim Inc. A tunable semiconductor component provided with a current barrier
CN108334654B (zh) * 2017-10-20 2019-01-18 北京空天技术研究所 一种基于几何模型的静力学分析模型构建方法及系统
CN110518061A (zh) * 2019-09-25 2019-11-29 华慧高芯科技(深圳)有限公司 基于平面s型结的耐高压元件及制造工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551103A (en) * 1978-06-06 1980-01-07 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor resistor
JP2580571B2 (ja) * 1985-07-31 1997-02-12 日本電気株式会社 入力保護回路
JPS62165352A (ja) * 1986-01-17 1987-07-21 Nec Corp 半導体装置
JPS62177959A (ja) * 1986-01-31 1987-08-04 Nec Corp 半導体装置
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
JP2788269B2 (ja) * 1988-02-08 1998-08-20 株式会社東芝 半導体装置およびその製造方法
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5316978A (en) * 1993-03-25 1994-05-31 Northern Telecom Limited Forming resistors for intergrated circuits
KR950021600A (ko) * 1993-12-09 1995-07-26 가나이 쯔또무 반도체 집적회로장치 및 그 제조방법
DE4437581C2 (de) * 1994-10-20 1996-08-08 Siemens Ag Verfahren zur Herstellung einer Festwertspeicherzellenanordnung mit vertikalen MOS-Transistoren
JPH09257831A (ja) * 1996-03-22 1997-10-03 Nippon Seiki Co Ltd 物理量検出センサ

Also Published As

Publication number Publication date
EP0996158A1 (de) 2000-04-26
US6815795B2 (en) 2004-11-09
DE69937285D1 (de) 2007-11-22
EP0996158B1 (de) 2007-09-12
EP0996158B9 (de) 2008-06-18
US20030205780A1 (en) 2003-11-06
US6566732B1 (en) 2003-05-20

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Legal Events

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