DE69736714D1 - ESD-Schutznetzwerk auf Halbleiterschaltungsstrukturen - Google Patents

ESD-Schutznetzwerk auf Halbleiterschaltungsstrukturen

Info

Publication number
DE69736714D1
DE69736714D1 DE69736714T DE69736714T DE69736714D1 DE 69736714 D1 DE69736714 D1 DE 69736714D1 DE 69736714 T DE69736714 T DE 69736714T DE 69736714 T DE69736714 T DE 69736714T DE 69736714 D1 DE69736714 D1 DE 69736714D1
Authority
DE
Germany
Prior art keywords
esd protection
semiconductor circuit
protection network
circuit structures
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69736714T
Other languages
English (en)
Inventor
Paolo Colombo
Jacopo Mulatti
Giovanni Campardo
Marco Maccarrone
Roberto Annunziata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69736714D1 publication Critical patent/DE69736714D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69736714T 1997-12-31 1997-12-31 ESD-Schutznetzwerk auf Halbleiterschaltungsstrukturen Expired - Lifetime DE69736714D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830741A EP0932202B1 (de) 1997-12-31 1997-12-31 ESD-Schutznetzwerk auf Halbleiterschaltungsstrukturen

Publications (1)

Publication Number Publication Date
DE69736714D1 true DE69736714D1 (de) 2006-11-02

Family

ID=8230940

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69736714T Expired - Lifetime DE69736714D1 (de) 1997-12-31 1997-12-31 ESD-Schutznetzwerk auf Halbleiterschaltungsstrukturen

Country Status (4)

Country Link
US (1) US6266222B1 (de)
EP (1) EP0932202B1 (de)
JP (1) JPH11274319A (de)
DE (1) DE69736714D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216277A (ja) * 1999-01-20 2000-08-04 Nec Corp 半導体装置及びその製造方法
DE69917626D1 (de) * 1999-07-30 2004-07-01 St Microelectronics Srl ESD-Schutzbauteil für eine integrierte Schaltungsstruktur
US6608744B1 (en) * 1999-11-02 2003-08-19 Oki Electric Industry Co., Ltd. SOI CMOS input protection circuit with open-drain configuration
JP4374782B2 (ja) * 2001-01-18 2009-12-02 トヨタ自動車株式会社 車載用燃料電池システム及びその制御方法
US6891207B2 (en) * 2003-01-09 2005-05-10 International Business Machines Corporation Electrostatic discharge protection networks for triple well semiconductor devices
US7138701B2 (en) * 2003-10-02 2006-11-21 International Business Machines Corporation Electrostatic discharge protection networks for triple well semiconductor devices
US7095094B2 (en) * 2004-09-29 2006-08-22 Agere Systems Inc. Multiple doping level bipolar junctions transistors and method for forming
US7446378B2 (en) * 2004-12-29 2008-11-04 Actel Corporation ESD protection structure for I/O pad subject to both positive and negative voltages
US7285837B2 (en) * 2005-01-17 2007-10-23 System General Corp. Electrostatic discharge device integrated with pad
NL1031205C2 (nl) * 2005-02-24 2008-02-12 Samsung Electronics Co Ltd Elektrostatische ontladingsschakeling.
US7138686B1 (en) * 2005-05-31 2006-11-21 Freescale Semiconductor, Inc. Integrated circuit with improved signal noise isolation and method for improving signal noise isolation
US7910951B2 (en) * 2008-06-18 2011-03-22 National Semiconductor Corporation Low side zener reference voltage extended drain SCR clamps
JP2010182727A (ja) * 2009-02-03 2010-08-19 Renesas Electronics Corp 半導体装置
US8350355B2 (en) * 2010-03-01 2013-01-08 Infineon Technologies Ag Electrostatic discharge devices
US9929139B2 (en) 2015-03-09 2018-03-27 Apple Inc. Modular electrostatic discharge (ESD) protection

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159426A (en) * 1988-04-29 1992-10-27 Dallas Semiconductor Corporation Integrated circuit with improved battery protection
JPH02113623A (ja) * 1988-10-21 1990-04-25 Sharp Corp 集積回路の静電気保護回路
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
US5416351A (en) * 1991-10-30 1995-05-16 Harris Corporation Electrostatic discharge protection
US5268588A (en) * 1992-09-30 1993-12-07 Texas Instruments Incorporated Semiconductor structure for electrostatic discharge protection
US5521789A (en) * 1994-03-15 1996-05-28 National Semiconductor Corporation BICMOS electrostatic discharge protection circuit
US5530612A (en) * 1994-03-28 1996-06-25 Intel Corporation Electrostatic discharge protection circuits using biased and terminated PNP transistor chains
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
US5754381A (en) * 1997-02-04 1998-05-19 Industrial Technology Research Institute Output ESD protection with high-current-triggered lateral SCR
US5991135A (en) * 1998-05-11 1999-11-23 Vlsi Technology, Inc. System including ESD protection

Also Published As

Publication number Publication date
US6266222B1 (en) 2001-07-24
EP0932202B1 (de) 2006-09-20
EP0932202A1 (de) 1999-07-28
JPH11274319A (ja) 1999-10-08

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Legal Events

Date Code Title Description
8332 No legal effect for de