DE69835050D1 - Vorrichtung zur Einstellung eines Beleuchtungsfeldes - Google Patents

Vorrichtung zur Einstellung eines Beleuchtungsfeldes

Info

Publication number
DE69835050D1
DE69835050D1 DE69835050T DE69835050T DE69835050D1 DE 69835050 D1 DE69835050 D1 DE 69835050D1 DE 69835050 T DE69835050 T DE 69835050T DE 69835050 T DE69835050 T DE 69835050T DE 69835050 D1 DE69835050 D1 DE 69835050D1
Authority
DE
Germany
Prior art keywords
adjusting
lighting field
lighting
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69835050T
Other languages
English (en)
Other versions
DE69835050T2 (de
Inventor
Andrew W Mccullouch
Pradeep K Govil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Application granted granted Critical
Publication of DE69835050D1 publication Critical patent/DE69835050D1/de
Publication of DE69835050T2 publication Critical patent/DE69835050T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
DE69835050T 1997-03-31 1998-03-18 Vorrichtung zur Einstellung eines Beleuchtungsfeldes Expired - Fee Related DE69835050T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/829,099 US5966202A (en) 1997-03-31 1997-03-31 Adjustable slit
US829099 1997-03-31
US23407 1998-02-12
US09/023,407 US5895737A (en) 1997-03-31 1998-02-12 Method for adjusting an illumination field based on selected reticle feature

Publications (2)

Publication Number Publication Date
DE69835050D1 true DE69835050D1 (de) 2006-08-10
DE69835050T2 DE69835050T2 (de) 2006-10-19

Family

ID=25253521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69835050T Expired - Fee Related DE69835050T2 (de) 1997-03-31 1998-03-18 Vorrichtung zur Einstellung eines Beleuchtungsfeldes

Country Status (6)

Country Link
US (2) US5966202A (de)
EP (1) EP0869396B1 (de)
JP (2) JP4183792B2 (de)
KR (1) KR100548050B1 (de)
CA (1) CA2233543C (de)
DE (1) DE69835050T2 (de)

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US6292255B1 (en) * 1997-03-31 2001-09-18 Svg Lithography Systems, Inc. Dose correction for along scan linewidth variation
AU2746799A (en) * 1998-03-09 1999-09-27 Nikon Corporation Scanning exposure method, scanning exposure apparatus and its manufacturing method, and device and its manufacturing method
US6741394B1 (en) 1998-03-12 2004-05-25 Nikon Corporation Optical integrator, illumination optical apparatus, exposure apparatus and observation apparatus
US6404499B1 (en) * 1998-04-21 2002-06-11 Asml Netherlands B.V. Lithography apparatus with filters for optimizing uniformity of an image
EP0952491A3 (de) * 1998-04-21 2001-05-09 Asm Lithography B.V. Lithographischer Apparat
JP3762102B2 (ja) * 1998-06-04 2006-04-05 キヤノン株式会社 走査型投影露光装置及びそれを用いたデバイスの製造方法
US6346979B1 (en) * 1999-03-17 2002-02-12 International Business Machines Corporation Process and apparatus to adjust exposure dose in lithography systems
JP2001044111A (ja) * 1999-07-29 2001-02-16 Nec Corp 走査型露光装置とその制御方法
DE10062579A1 (de) * 1999-12-15 2001-06-21 Nikon Corp Optischer Integrierer,optische Beleuchtungseinrichtung, Photolithographie-Belichtungseinrichtung,und Beobachtungseinrichtung
SG124257A1 (en) 2000-02-25 2006-08-30 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
US6307619B1 (en) 2000-03-23 2001-10-23 Silicon Valley Group, Inc. Scanning framing blade apparatus
US6704090B2 (en) * 2000-05-11 2004-03-09 Nikon Corporation Exposure method and exposure apparatus
US6509952B1 (en) 2000-05-23 2003-01-21 Silicon Valley Group, Inc. Method and system for selective linewidth optimization during a lithographic process
US6784976B2 (en) * 2002-04-23 2004-08-31 Asml Holding N.V. System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
WO2005015310A2 (en) * 2003-07-16 2005-02-17 Carl Zeiss Smt Ag Illumination system for a microlithographic projection exposure apparatus
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
WO2005040927A2 (en) * 2003-10-18 2005-05-06 Carl Zeiss Smt Ag Device and method for illumination dose adjustments in microlithography
WO2005048326A1 (ja) * 2003-11-13 2005-05-26 Nikon Corporation 可変スリット装置、照明装置、露光装置、露光方法及びデバイスの製造方法
JP4581639B2 (ja) * 2003-11-13 2010-11-17 株式会社ニコン 可変スリット装置、照明装置、露光装置、及びデバイスの製造方法
JP2005175040A (ja) * 2003-12-09 2005-06-30 Canon Inc 照明光学系及び露光装置
US7023524B2 (en) * 2003-12-18 2006-04-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060087634A1 (en) * 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
JP2006134932A (ja) * 2004-11-02 2006-05-25 Nikon Corp 可変スリット装置、照明光学装置、露光装置、及び露光方法
US7362413B2 (en) * 2004-12-09 2008-04-22 Asml Netherlands B.V. Uniformity correction for lithographic apparatus
US7687211B2 (en) * 2005-04-08 2010-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for photolithography in semiconductor manufacturing
US20070139630A1 (en) * 2005-12-19 2007-06-21 Nikon Precision, Inc. Changeable Slit to Control Uniformity of Illumination
JP2007335849A (ja) * 2006-05-17 2007-12-27 Canon Inc 遮光装置および露光装置
WO2007145139A1 (ja) * 2006-06-16 2007-12-21 Nikon Corporation 可変スリット装置、照明装置、露光装置、露光方法及びデバイス製造方法
US20080090396A1 (en) * 2006-10-06 2008-04-17 Semiconductor Energy Laboratory Co., Ltd. Light exposure apparatus and method for making semiconductor device formed using the same
JP4838698B2 (ja) * 2006-12-19 2011-12-14 キヤノン株式会社 露光装置およびデバイス製造方法
US8081296B2 (en) * 2007-08-09 2011-12-20 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
EP2178107A4 (de) 2007-08-10 2011-04-13 Nikon Corp Optische beleuchtungsvorrichtung, fotolithographiegeräte und bauelementeherstellungsverfahren
DE102008001553B4 (de) * 2008-05-05 2015-04-30 Carl Zeiss Smt Gmbh Komponente zur Einstellung einer scanintegrierten Beleuchtungsenergie in einer Objektebene einer Mikrolithographie-Projektionsbelichtungsanlage
US8467034B2 (en) * 2008-07-02 2013-06-18 Nikon Corporation Light shielding unit, variable slit apparatus, and exposure apparatus
JP2010123755A (ja) * 2008-11-19 2010-06-03 Canon Inc 露光装置及びデバイス製造方法
NL2004770A (nl) * 2009-05-29 2010-11-30 Asml Holding Nv Lithographic apparatus and method for illumination uniformity correction and uniformity drift compensation.
JP6626273B2 (ja) * 2015-06-03 2019-12-25 キヤノン株式会社 露光装置及び物品の製造方法
CN107255210B (zh) * 2017-05-16 2019-02-26 西安电子科技大学 一种基于柔性Sarrus机构的恒力支撑机构

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US4047808A (en) * 1975-08-13 1977-09-13 Varian Techtron Proprietary Limited Adjustable slit mechanism
US4516852A (en) * 1981-08-13 1985-05-14 The Perkin-Elmer Corp. Method and apparatus for measuring intensity variation in a light source
DE3271539D1 (en) * 1981-08-13 1986-07-10 Perkin Elmer Corp Method and apparatus for measuring the illumination uniformity in a ring field projection system
JPS5883836A (ja) * 1981-11-13 1983-05-19 Hitachi Ltd 円弧状照明光形成スリツト
JPS5928337A (ja) * 1982-08-09 1984-02-15 Hitachi Ltd プロジエクシヨンアライナ
US4509290A (en) * 1983-03-18 1985-04-09 Stanfield Jr Alvin M Shutter construction
JPS59229534A (ja) * 1984-05-16 1984-12-24 Canon Inc スリツト露光シヤツタ−
JPS61104622A (ja) * 1984-10-29 1986-05-22 Nec Corp バリアブルアバ−チヤ−
JPS62193125A (ja) * 1986-02-19 1987-08-25 Canon Inc 露光むら補正装置
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NL8800738A (nl) * 1988-03-24 1989-10-16 Philips Nv Roentgenonderzoekapparaat met een instelbaar spleetvormig diafragma.
JPH01298719A (ja) * 1988-05-27 1989-12-01 Hitachi Ltd 露光装置
JP3148818B2 (ja) * 1990-11-15 2001-03-26 株式会社ニコン 投影型露光装置
JP3049775B2 (ja) * 1990-12-27 2000-06-05 株式会社ニコン 投影露光装置及び方法、並びに素子製造方法
JP3049777B2 (ja) * 1990-12-27 2000-06-05 株式会社ニコン 投影露光装置及び方法、並びに素子製造方法
US5107530A (en) * 1991-06-06 1992-04-21 The State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University X-ray diffractometer with shutter control
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JPH06188169A (ja) * 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06181167A (ja) * 1992-10-14 1994-06-28 Canon Inc 像形成方法及び該方法を用いてデバイスを製造する方法及び該方法に用いるフォトマスク
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JPH0845818A (ja) * 1994-07-28 1996-02-16 Nikon Corp 露光方法
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JP3200244B2 (ja) * 1993-07-16 2001-08-20 キヤノン株式会社 走査型露光装置
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Also Published As

Publication number Publication date
EP0869396A2 (de) 1998-10-07
DE69835050T2 (de) 2006-10-19
CA2233543C (en) 2002-03-05
CA2233543A1 (en) 1998-09-30
JP4183792B2 (ja) 2008-11-19
KR19980080911A (ko) 1998-11-25
EP0869396B1 (de) 2006-06-28
US5966202A (en) 1999-10-12
JP2008172256A (ja) 2008-07-24
JPH10340854A (ja) 1998-12-22
KR100548050B1 (ko) 2006-05-02
US5895737A (en) 1999-04-20
EP0869396A3 (de) 2000-12-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee