DE69834886D1 - Vertikaler Transistor implementiert in einer Speicherzelle mit Grabenkondensator - Google Patents

Vertikaler Transistor implementiert in einer Speicherzelle mit Grabenkondensator

Info

Publication number
DE69834886D1
DE69834886D1 DE69834886T DE69834886T DE69834886D1 DE 69834886 D1 DE69834886 D1 DE 69834886D1 DE 69834886 T DE69834886 T DE 69834886T DE 69834886 T DE69834886 T DE 69834886T DE 69834886 D1 DE69834886 D1 DE 69834886D1
Authority
DE
Germany
Prior art keywords
memory cell
vertical transistor
trench capacitor
capacitor memory
transistor implemented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69834886T
Other languages
English (en)
Other versions
DE69834886T2 (de
Inventor
Johann Alsmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE69834886D1 publication Critical patent/DE69834886D1/de
Publication of DE69834886T2 publication Critical patent/DE69834886T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
DE69834886T 1997-09-30 1998-08-19 Vertikaler Transistor implementiert in einer Speicherzelle mit Grabenkondensator Expired - Fee Related DE69834886T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94064997A 1997-09-30 1997-09-30
US940649 1997-09-30

Publications (2)

Publication Number Publication Date
DE69834886D1 true DE69834886D1 (de) 2006-07-27
DE69834886T2 DE69834886T2 (de) 2007-05-24

Family

ID=25475204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69834886T Expired - Fee Related DE69834886T2 (de) 1997-09-30 1998-08-19 Vertikaler Transistor implementiert in einer Speicherzelle mit Grabenkondensator

Country Status (5)

Country Link
EP (1) EP0905783B1 (de)
JP (1) JPH11168203A (de)
KR (1) KR100593566B1 (de)
CN (1) CN1216863A (de)
DE (1) DE69834886T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259129B1 (en) * 1999-04-20 2001-07-10 International Business Machines Corporation Strap with intrinsically conductive barrier
WO2000077848A1 (en) * 1999-06-10 2000-12-21 Infineon Technologies North America Corp. Self-aligned buried strap for vertical transistors in semiconductor memories
US6509226B1 (en) * 2000-09-27 2003-01-21 International Business Machines Corporation Process for protecting array top oxide
US6509624B1 (en) * 2000-09-29 2003-01-21 International Business Machines Corporation Semiconductor fuses and antifuses in vertical DRAMS
DE10321742A1 (de) 2003-05-14 2004-12-09 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Isoliergraben und Feldeffekttransistor sowie Herstellungsverfahren
CN100466231C (zh) * 2006-04-24 2009-03-04 联华电子股份有限公司 沟槽电容动态随机存取存储器元件及其制作方法
TWI405246B (zh) * 2009-12-29 2013-08-11 Taiwan Memory Corp 半導體溝槽製程

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
JPH0760859B2 (ja) * 1985-11-19 1995-06-28 沖電気工業株式会社 半導体装置及びその製造方法
US4830978A (en) * 1987-03-16 1989-05-16 Texas Instruments Incorporated Dram cell and method
US4833516A (en) * 1987-08-03 1989-05-23 International Business Machines Corporation High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor
JPS6467966A (en) * 1987-09-08 1989-03-14 Mitsubishi Electric Corp Semiconductor device
JPH01171266A (ja) * 1987-12-25 1989-07-06 Matsushita Electric Ind Co Ltd 半導体メモリ装置
US5252845A (en) * 1990-04-02 1993-10-12 Electronics And Telecommunications Research Institute Trench DRAM cell with vertical transistor
US5034787A (en) * 1990-06-28 1991-07-23 International Business Machines Corporation Structure and fabrication method for a double trench memory cell device
JP3322936B2 (ja) * 1992-03-19 2002-09-09 株式会社東芝 半導体記憶装置
US5395786A (en) * 1994-06-30 1995-03-07 International Business Machines Corporation Method of making a DRAM cell with trench capacitor

Also Published As

Publication number Publication date
EP0905783B1 (de) 2006-06-14
EP0905783A1 (de) 1999-03-31
KR100593566B1 (ko) 2007-08-16
KR19990030299A (ko) 1999-04-26
DE69834886T2 (de) 2007-05-24
CN1216863A (zh) 1999-05-19
JPH11168203A (ja) 1999-06-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee