DE69830535D1 - Ein Sputteringtarget - Google Patents

Ein Sputteringtarget

Info

Publication number
DE69830535D1
DE69830535D1 DE69830535T DE69830535T DE69830535D1 DE 69830535 D1 DE69830535 D1 DE 69830535D1 DE 69830535 T DE69830535 T DE 69830535T DE 69830535 T DE69830535 T DE 69830535T DE 69830535 D1 DE69830535 D1 DE 69830535D1
Authority
DE
Germany
Prior art keywords
sputtering target
sputtering
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69830535T
Other languages
English (en)
Other versions
DE69830535T2 (de
Inventor
Yasuhiro Yamakoshi
Hirohito Miyashita
Kazuhiro Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26408882&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69830535(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Application granted granted Critical
Publication of DE69830535D1 publication Critical patent/DE69830535D1/de
Publication of DE69830535T2 publication Critical patent/DE69830535T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12993—Surface feature [e.g., rough, mirror]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69830535T 1997-04-15 1998-04-08 Ein Sputteringtarget Expired - Lifetime DE69830535T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11182497 1997-04-15
JP11182497 1997-04-15
JP6766898 1998-03-04
JP06766898A JP3755559B2 (ja) 1997-04-15 1998-03-04 スパッタリングターゲット

Publications (2)

Publication Number Publication Date
DE69830535D1 true DE69830535D1 (de) 2005-07-21
DE69830535T2 DE69830535T2 (de) 2005-11-03

Family

ID=26408882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69830535T Expired - Lifetime DE69830535T2 (de) 1997-04-15 1998-04-08 Ein Sputteringtarget

Country Status (6)

Country Link
US (1) US6153315A (de)
EP (1) EP0872572B1 (de)
JP (1) JP3755559B2 (de)
KR (1) KR100286206B1 (de)
DE (1) DE69830535T2 (de)
TW (1) TW531563B (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309556B1 (en) * 1998-09-03 2001-10-30 Praxair S.T. Technology, Inc. Method of manufacturing enhanced finish sputtering targets
DE19983727T1 (de) * 1998-11-12 2002-03-21 Applied Materials Inc Verbesserte Tantal enthaltende Sperrschichten für Kupfer unter Verwendung hochreiner Tantal-Targets beim Besputtern
JP3820787B2 (ja) * 1999-01-08 2006-09-13 日鉱金属株式会社 スパッタリングターゲットおよびその製造方法
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6585870B1 (en) 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
JP4709358B2 (ja) * 2000-08-30 2011-06-22 株式会社東芝 スパッタリングターゲットとそれを用いたスパッタリング装置、薄膜、および電子部品
US6833058B1 (en) 2000-10-24 2004-12-21 Honeywell International Inc. Titanium-based and zirconium-based mixed materials and sputtering targets
KR100858600B1 (ko) * 2001-10-05 2008-09-17 스미토모덴키고교가부시키가이샤 표면 탄성파 소자용 다이아몬드 기판 및 표면 탄성파 소자
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
EP1666630A4 (de) * 2003-09-12 2012-06-27 Jx Nippon Mining & Metals Corp Sputtertarget und verfahren zur endbearbeitung der oberfläche eines derartigen targets
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
WO2005037649A1 (ja) * 2003-10-15 2005-04-28 Nikko Materials Co., Ltd. ホローカソード型スパッタリングターゲットの包装装置及び包装方法
CN1926260B (zh) * 2004-03-01 2010-10-06 日矿金属株式会社 表面缺陷少的溅射靶及其表面加工方法
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
EP1826291B1 (de) * 2004-11-30 2014-10-29 JX Nippon Mining & Metals Corporation Gesintertes spattertarget aus sb-te-legierung
US20060268284A1 (en) * 2005-03-01 2006-11-30 Zhiguo Zhang Method and apparatus for surface roughness measurement
JP2006316339A (ja) * 2005-04-12 2006-11-24 Kobe Steel Ltd Ａｌ系スパッタリングターゲット
US20070007505A1 (en) * 2005-07-07 2007-01-11 Honeywell International Inc. Chalcogenide PVD components
WO2007040014A1 (ja) * 2005-10-04 2007-04-12 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット
US20070215463A1 (en) * 2006-03-14 2007-09-20 Applied Materials, Inc. Pre-conditioning a sputtering target prior to sputtering
US20080121516A1 (en) * 2006-11-29 2008-05-29 Jaydeep Sarkar Method and apparatus for treating sputtering target to reduce burn-in time and sputtering targets made thereby
CN101595239B (zh) * 2007-01-29 2013-01-02 东曹Smd有限公司 超光滑面溅射靶及其制造方法
US9279178B2 (en) * 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
JP5379010B2 (ja) * 2008-02-08 2013-12-25 Ｊｘ日鉱日石金属株式会社 イッテルビウム製スパッタリングターゲット及び同ターゲットの製造方法。
WO2009123055A1 (ja) * 2008-04-03 2009-10-08 日鉱金属株式会社 パーティクルの発生の少ないスパッタリングターゲット
JP4846872B2 (ja) * 2009-03-03 2011-12-28 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法
KR101291822B1 (ko) * 2010-07-30 2013-07-31 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃 및/또는 코일 그리고 이들의 제조 방법
SG190696A1 (en) * 2011-03-01 2013-07-31 Jx Nippon Mining & Metals Corp Method of storing metal lanthanum target, vacuum-sealed metal lanthanum target, and thin film formed by sputtering the metal lanthanum target
JP5988140B2 (ja) * 2011-06-07 2016-09-07 日立金属株式会社 ＭｏＴｉターゲット材の製造方法およびＭｏＴｉターゲット材
KR101920170B1 (ko) * 2014-07-03 2018-11-19 스미토모 긴조쿠 고잔 가부시키가이샤 스퍼터링용 타깃재와 그 제조 방법
JP6636799B2 (ja) * 2015-03-25 2020-01-29 Ｊｘ金属株式会社 銅合金スパッタリングターゲット及びその評価方法
JP6586540B1 (ja) * 2019-03-28 2019-10-02 Ｊｘ金属株式会社 ターゲット材とバッキングプレートとの接合体、および、ターゲット材とバッキングプレートとの接合体の製造方法
CN111300157A (zh) * 2019-12-05 2020-06-19 宁波江丰电子材料股份有限公司 一种高硬度靶材的表面处理方法
US20230134596A1 (en) * 2021-10-29 2023-05-04 Texas Instruments Incorporated Metal stack to improve stack thermal stability

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663120A (en) * 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
US4750932A (en) * 1985-04-15 1988-06-14 Gte Products Corporation Refractory metal silicide sputtering target
US5294321A (en) * 1988-12-21 1994-03-15 Kabushiki Kaisha Toshiba Sputtering target
JPH03257158A (ja) * 1990-03-07 1991-11-15 Toshiba Corp スパッタリングターゲット
DE69117868T2 (de) * 1990-05-15 1996-07-25 Toshiba Kawasaki Kk Zerstäubungstarget und dessen herstellung
JPH05214523A (ja) * 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
US5464520A (en) * 1993-03-19 1995-11-07 Japan Energy Corporation Silicide targets for sputtering and method of manufacturing the same
JP2794382B2 (ja) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー スパッタリング用シリサイドターゲット及びその製造方法
US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
FR2744805B1 (fr) * 1996-02-13 1998-03-20 Pechiney Aluminium Cibles de pulverisation cathodique selectionnees par controle ultrasons pour leur faible taux d'emissions de particules

Also Published As

Publication number Publication date
KR19980081356A (ko) 1998-11-25
TW531563B (en) 2003-05-11
EP0872572A1 (de) 1998-10-21
DE69830535T2 (de) 2005-11-03
KR100286206B1 (ko) 2001-04-16
EP0872572B1 (de) 2005-06-15
US6153315A (en) 2000-11-28
JPH111766A (ja) 1999-01-06
JP3755559B2 (ja) 2006-03-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NIPPON MINING & METALS CO.LTD., TOKIO/TOKYO, JP

R082 Change of representative

Ref document number: 872572

Country of ref document: EP

Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN, DE