經濟部智慧財產局員工消費合作社印製 531563 A7 ___ B7 五、發明說明（I ) 本發明係有關於一種濺鍍靶，以使藉濺鍍形成於基板 之膜的厚度之均一性優異，且結球(nodule)及粒子之發生少 ，並有關於濺鍍靶之製法。 最近，作爲半導體薄膜的形成方法之使用濺鍍靶的濺 鍍方法，已廣泛地採用之。 該濺鑛法，係以帶電粒子衝擊濺鍍靶，藉該衝擊力而 從濺鎪靶中將靶的構成物質之粒子趕出，而令該粒子附著 在設置成和靶面對面之例如晶圓等基盤(板）上，藉此以形 成薄膜之成膜法。 依該濺鍍法所形成的薄膜之問題點之一，可舉易形成 膜厚不均一的薄膜爲例。以往，並不是明確地瞭解這種膜 厚不均一的問題係起因於靶的表面狀態，故目前並沒有具 體的解決對策。 又’藉上述般之灘鑛法成I吴時’在灑鑛祀的侵触部有 時會生成被稱作結球之數//m〜數mm大小的突起物。且該 結球會因濺鍍中荷電粒子之衝擊而裂開，而產生粒子發生 於基盤上之問題。 所產生的粒子，會隨著靶侵蝕面上的結球數增多而增 加，爲了將會造成問題之粒子減少，則最大的課題在於如 何防止結球之形成。 且’在LSI半導體裝置之尚集積度化(4]y[位元，16M 位元、64M位元等）、線寬在1 /zm以下不斷地微細化之現 狀下，特別是來自上述結球之粒子發生係變成被當作重大 的問題看待。 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -*------ -------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531563 A7 _____B7 五、發明說明（>) 即，粒子係直接附著於基盤上所形成的薄膜，或暫時 附著並堆積在濺鍍裝置的周圍壁或元件後剝落，之後再度 附著於薄膜上，如此而成爲引起配線之斷線或短路等重大 問題的原因。伴隨著電子裝置回路之高集積度化及微細化 之進展，粒子問題乃成爲相當重要的課題。 習知，爲了將如此般的結球減少而在濺鍍操作條件之 調整或磁性體的改良上下過許多功夫，但由於並不淸楚結 球的生成原因，故現狀爲，尙未提供出著眼在可防止結球 的生成之濺鍍靶。 基於此，本發明係提供一種濺鍍靶，以改良藉濺鍍所 形成的薄膜膜厚之均一性，而防止靶之濺鍍時之結球的生 成，如此以抑制粒子的發生。 本發明係提供= 1. 一種濺鍍靶，其特徵在於，濺鍍靶之被侵蝕面的表面粗 度，係中心線平均粗度RaSl.O/zm ; 2. —種濺鍍靶，其特徵在於，濺鍍靶之被侵蝕面的表面粗 度，係中心線平均粗度Ra^L0//m ;且附著於被侵蝕表面 之污染物質，即主成分及合金成分以外的高融點金屬元素 及Si、Al、Co、Ni、B之總量爲500ppm以下； 3. 如上述2所述之濺鍍靶，其中之污染物質，即主成分及 合金成分以外的高融點金屬元素及Si、Al、Co、Ni、B之 總量爲300ppm以下； 4. 如上述1〜3中之任一者所述之濺鍍靶，其中，濺鍍靶之 被侵餓表面的氫含量爲50ppm以下； 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐1 --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 531563 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（今） 5·如上述4所述之濺鍍靶，其中，濺鍍靶之被侵蝕表面的 氫含量爲30ppm以下； 6·—種濺鍍靶，其特徵在於，濺鍍靶之被侵蝕面的表面粗 度’係中心線平均粗度RaS 1.0//m ;且被侵触表面的加工 變質層之厚度爲50//m以下； 7·—種濺鍍靶，其特徵在於，濺鍍靶之被侵蝕面的表面粗 度，係中心線平均粗度Ra^O.2//m ;且被侵蝕表面的加工 變質層之厚度爲15/zm以下； 8·如上述6、7所述之濺鍍靶，其中，附著於被侵蝕表面之 污染物質’即主成分及合金成分以外的高融點金屬元素及 Si、Al、Co、Ni、B 之總量爲 500ppm 以下； 9·如上述8所述之濺鍍靶，其中，附著於被侵蝕表面之污 染物質，即主成分及合金成分以外的高融點金屬元素及Si 、Al、Co、Ni、B之總量爲300ppm以下； 10·如上述6〜9中之任一者所述之濺鍍靶，其中，濺鍍靶之 被侵鈾表面的氫含量爲50ppm以下； 11·如上述6〜9中之任一者所述之濺鍍靶，其中，濺鍍靶之 被侵蝕表面的氫含量爲3〇PPm以下； 12·—種濺鍍靶之製法，其特徵在於，係藉由使用鑽石刀具 之精密切削，以進行濺鍍面之精加工； 13·—種擺鍍耙之製法’其特徵在於，係進行使用鑽石刀具 之精密切削，再藉硏磨以進行濺鍍面之精加工。 本發明者等’爲了達成上述目的而進行深入硏究之結 果，係得出下述般的見解。 5 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） 1_1 1 ϋ· ϋ ϋ 11 ϋ tmme 0 emmM ϋ ϋ I.·-，· an aiBi 1 1 1 I (請先閱讀背面之注意事項再填寫本頁) 531563 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（k) 即，將使用中的濺鍍靶取出，經仔細檢查的結果’了 解到膜厚的均一性對靶的表面狀態有很大的影響，藉由控 制表面粗度即可提高膜厚的均一性，又結球易在靶表面的 被侵蝕部分之凹凸部產生，被侵蝕的靶表面之表面粗度越 細則所發生之結球數越少。 有關該結球，可想成，由濺鍍靶以低角度被趕出的粒 子易再附著於靶的凸部，再附著的速度比被侵蝕的速度來 得快之場合，會成長成結球。在凹凸很嚴重的場合，故再 附著易產生故結球之成長較容易，結果則會產生多數的結 球。 基於此，在將經機械加工、硏磨加工、化學蝕刻等方 法調整表面粗度之濺鍍靶濺鍍時，所形成的薄膜的膜厚係 更均一，而可確認出結球數及粒子數之減少。且，更進一 步硏究的結果，係確認出，因切削加工時刀具等加工工具 的磨耗而對靶表面造成之該工具材料的殘留、硏磨材的殘 留、因化學蝕刻所造成之表面氫含量的增加等，皆會促使 結球形成。 濺鍍靶表面中上述般工具材料的殘留和硏磨材的殘留 ，將引起在侵蝕面之微發弧（微量放電現象）的產生，而在 表面的一部分產生局部的溶融凝固而形成凹凸部，如此以 成爲新的結球生成場所。又，同時也了解到，因微發弧而 造成粒子的增加。 對於各種加工工具、硏磨材等的前述殘留量加以檢討 後，發現到只要將這些殘留污染物質儘可能地減少，即可 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----I---I I · I-----—訂--------- (請先閱讀背面之注音？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531563 A7 B7 五、發明說明（今） 抑制結球的生成並將粒子減少。 又發現到，化學蝕刻時靶表面的氫含量多之場合，初 期濺鍍將變得不安定，結果會使侵蝕面的表面變粗而促成 結球的生成。 雖然對其整個機構並非完全了解，但或許可推測成， 出自耙表面的微量氫會使電漿變得不安定，而使濺鍍在局 部進行，結果造成靶面的表面變粗。 如上述，本發明的濺鍍靶的被侵蝕面的表面粗度，係 中心線平均粗度RaSl.O/zm，如此般將被侵蝕面的粗度弄 細之理由在於，一是可改善膜厚的均一性，又因結球係選 擇性地僅生成於侵蝕面，若靶表面之受到侵蝕部分之凹凸 太嚴重，則來自濺鍍靶之以低角度被趕出的粒子易再附著 於靶的凸部而使得結球較易生成，而可防止如此般的再附 著而抑制結球的生成，藉此以將粒子減少。Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 531563 A7 ___ B7 V. Description of the Invention (I) The present invention relates to a sputtering target so that the thickness uniformity of the film formed on the substrate by sputtering is excellent and the ball is balled There are few occurrences of nodule and particles, and there is a method for producing a sputtering target. Recently, a sputtering method using a sputtering target as a method for forming a semiconductor thin film has been widely used. The ore sputtering method uses a charged particle to impact the sputtering target, and uses the impact force to drive out particles of the constituent material of the target from the sputtering target, and attaches the particles to, for example, a wafer, which is arranged to face the target. On the substrate (plate), a film-forming method is thereby formed. One of the problems with the thin film formed by this sputtering method is that it is easy to form a thin film with uneven thickness. In the past, it was not clear that this problem of uneven film thickness was caused by the surface state of the target, so there is currently no specific solution. In addition, "by the above-mentioned beach mining method to form" I Wushi ", in the invading part of the sacrifice sacrifice, sometimes a protrusion called a ball number / m to several mm is generated. In addition, the nodule will crack due to the impact of the charged particles during sputtering, and the problem that the particles occur on the substrate is generated. The generated particles will increase as the number of nodules on the target erosion surface increases. In order to reduce the number of particles that will cause problems, the biggest issue is how to prevent the formation of nodules. And 'under the current status of LSI semiconductor device integration (4] y [bit, 16M bit, 64M bit, etc.), the line width is constantly refined below 1 / zm, especially from the above-mentioned knotting Particle-generating systems become viewed as major issues. 3 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)-* ------ ------------------- Order- ------- (Please read the precautions on the back before filling this page) Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 531563 A7 _____B7 V. Description of the invention (>) That is, the particles are directly attached to the substrate The formed thin film is temporarily attached and deposited on the peripheral wall or components of the sputtering device, and then peeled off, and then adheres to the thin film again, which causes a major problem such as disconnection or short circuit of the wiring. With the progress of higher integration and miniaturization of electronic device circuits, the problem of particles has become a very important issue. It is known that in order to reduce such nodularity, many efforts have been made to adjust the sputtering operation conditions or improve the magnetic body. However, since the cause of nodularity is not well understood, the current situation is that I have not provided any Sputter target to prevent ball formation. Based on this, the present invention provides a sputtering target to improve the uniformity of the film thickness of a thin film formed by sputtering, and to prevent the formation of balls during sputtering of the target, so as to suppress the occurrence of particles. The present invention provides = 1. A sputtering target, characterized in that the surface roughness of the eroded surface of the sputtering target is the average thickness of the centerline RaSl.O / zm; 2.-a sputtering target having the characteristics The reason is that the surface roughness of the eroded surface of the sputtering target is the average thickness of the centerline Ra ^ L0 // m; and the pollutants attached to the eroded surface are high melting point metal elements other than the main component and alloy component. And the total amount of Si, Al, Co, Ni, and B is 500 ppm or less; 3. The sputtering target as described in 2 above, the pollutants therein are high melting point metal elements other than the main component and alloy component, and Si, The total amount of Al, Co, Ni, and B is 300 ppm or less; 4. The sputtering target according to any one of 1 to 3 above, wherein the hydrogen content of the starved surface of the sputtering target is 50 ppm or less; 4 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm 1 -------- Order --------- (Please read the precautions on the back before filling this page) ) 531563 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (today) 5. The sputtering target as described in 4 above, in which the sputtering target is covered by The hydrogen content of the etched surface is 30 ppm or less; 6. A kind of sputtering target, characterized in that the surface roughness of the eroded surface of the sputtering target is the average thickness of the centerline RaS 1.0 // m; The thickness of the processed metamorphic layer is less than 50 // m; 7 · —a sputtering target, characterized in that the surface roughness of the eroded surface of the sputtering target is the average thickness of the centerline Ra ^ O.2 // m And the thickness of the processed metamorphic layer on the eroded surface is 15 / zm or less; 8 · The sputtering target according to the above 6, 7 wherein the pollutants attached to the eroded surface are other than the main component and the alloy component The total amount of high melting point metal elements and Si, Al, Co, Ni, and B is 500 ppm or less; 9. Sputtering target as described in 8 above, wherein the pollutants attached to the eroded surface, that is, the main component and alloy The total amount of high melting point metal elements and Si, Al, Co, Ni, and B other than the component is 300 ppm or less; 10. The sputtering target according to any one of 6 to 9 above, wherein The hydrogen content on the surface of the invaded uranium is 50 ppm or less; 11. The sputtering target according to any one of 6 to 9 above, wherein The hydrogen content of the eroded surface is less than 30 PPm; 12 · —a method for producing a sputtering target, characterized in that the precision machining of the sputtering surface is performed by precision cutting using a diamond tool; 13 · —a pendulum The manufacturing method of the plating rake is characterized in that precision cutting using a diamond tool is performed, and then honing is used to finish the sputtered surface. The inventors and others' researched in order to achieve the above purpose, and obtained The following opinions are expressed: 5 This paper size is in accordance with Chinese National Standard (CNS) A4 (21 × 297 mm) 1_1 1 ϋ · ϋ ϋ 11 ϋ tmme 0 emmM ϋ ϋ I. ·-, · an aiBi 1 1 1 I (Please read the precautions on the back before filling this page) 531563 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (k) Take out the sputtering target in use and carefully inspect it The result 'I understand that the uniformity of the film thickness has a great influence on the surface state of the target. By controlling the surface roughness, the uniformity of the film thickness can be improved, and nodularity is easily generated on the uneven portion of the eroded part of the target surface , The surface of the eroded target surface The thicker the rules, the less the number of kicks will occur. Concerning this nodule, it is conceivable that the particles that are driven out by the sputtering target at a low angle are likely to reattach to the convex portion of the target, and the re-attachment speed is faster than the rate of erosion, and grows into a nodule. In the case where the unevenness is severe, re-adhesion is easy to occur, so the growth of the ball is easier, and as a result, a lot of ball is generated. Based on this, when a sputtering target whose surface roughness is adjusted by methods such as machining, honing, and chemical etching is used, the thickness of the formed thin film is more uniform, and the number of balls and particles can be confirmed. cut back. Furthermore, as a result of further investigation, it was confirmed that the tool material residue, the honing material residue, and the surface hydrogen content caused by chemical etching caused by the abrasion of the tool and other processing tools during the cutting process on the target surface Increasing the amount, etc., will promote the formation of ball. Residues of the above-mentioned tool materials and honing materials on the surface of the sputtering target will cause micro-arc (micro-discharge phenomenon) on the eroded surface, and local melting and solidification will be formed on a part of the surface to form uneven portions. In this way to become a new kicking place. At the same time, we also learned that the increase in particles caused by micro-arcing. After reviewing the aforementioned residues of various processing tools, honing materials, etc., it was found that as long as these residual pollutants are reduced as much as possible, 6 paper sizes are applicable to the Chinese National Standard (CNS) A4 (210 X 297) (Li) ----- I --- II · I ------ Order --------- (Please read the note on the back? Matters before filling out this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative 531563 A7 B7 V. Description of the invention (today) Inhibit the formation of balls and reduce particles. It was also found that, when the hydrogen content on the target surface is large during chemical etching, the initial sputtering will become unstable, and as a result, the surface of the eroded surface will become thicker and the formation of nodules will be promoted. Although the entire mechanism is not fully understood, it may be speculated that the trace amount of hydrogen from the surface of the rake will cause the plasma to become unstable, and sputter will be performed locally, resulting in a thicker target surface. As described above, the surface roughness of the eroded surface of the sputtering target of the present invention is the average thickness of the centerline RaSl.O / zm. The reason for reducing the thickness of the eroded surface in this way is that one is to improve the film. Thick uniformity is generated only on the eroded surface due to nodularity. If the unevenness of the eroded part of the target surface is too serious, particles ejected from the sputtering target at a low angle are liable to reattach to the target. The convex portion makes it easier to generate nodules, and it is possible to prevent such reattachment and suppress the nodules from being formed, thereby reducing particles.
Ra若形成L〇//m以下，則可展現出膜厚均一性的改 善效果及結球發生之防止效果，如此即可將粒子減少。 又，如上述般，附著於被侵蝕表面的主成分及合金成 分以外的高融點金屬元素及Si、Al、Co、Ni、B，係切削 工具或硏磨材的材料之構成要素，在將靶表面加工時易殘 留而成爲污染物質。且，若有其等的存在，將誘導出微發 弧，而在表面產生結球的生成場所之凹凸。因此，必須使 得其等儘量減少。 本發明中附著於被侵蝕表面的主成分及合金成分以外 的高融點金屬元素及Si、Al、Co、Ni、B等污染物質的量 7 本&張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531563 A7 B7 五、發明說明（t>) 爲500ppm以下。 若這些物質的總量爲500ppm以下，由於可抑制在侵 蝕面之微發弧，而可避免構成新的結球生成場所之凹凸的 形成，故可防止結球之發生，而可抑制粒子的產生。 較佳爲，主成分及合金成分以外的高融點金屬元素及 Si、Al、Co、Ni、B等污染物質的量爲300ppm以下。如 此般，藉由將污染物質的總量限制成500ppm以下，較佳 爲300ppm以下，且中心線平均粗度Ra形成1.0//m以下 ，即可顯著地提高結球生成防止效果。 較佳爲，污染物質的量，係使用GDMS等分析方法而 分析從表面算起約5//m以內的領域並調整之。 又，藉化學蝕刻等以進行表面平滑化之場合，表面的 氫含量會增加，而在濺鍍時因微觀上突然發生之氣體成分 而易在表面產生凹凸，但在本發明的濺鍍靶中，藉由化學 蝕刻條件的調整和化學蝕刻後之脫氫處理，以使得被侵蝕 表面的氫含量形成50ppm以下，藉此即可防止結球的生成 ，並將粒子減少。 表面氫含量之分析，可對表面部和不含表面之主體部 進行比較分析等以分析之。 藉由將該氫含量限定成50ppm以下，即可進一步提高 結球之生成防止效果。 如此般，藉由令被侵蝕表面的氫含量形成50ppm以下 、較佳爲3〇ppm以下，又令前述污染物質的總量形成 500ppm以下、較佳爲300ppm以下，又令中心線平均粗度 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297 -------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531563 A7 B7 五、發明說明（fj )When Ra is formed to be L0 // m or less, the effect of improving the uniformity of film thickness and the effect of preventing the occurrence of ball formation can be exhibited, so that the particles can be reduced. In addition, as described above, the high melting point metal elements and Si, Al, Co, Ni, and B, which are adhered to the eroded surface, and the constituent elements of the material of the cutting tool or honing material, are The target surface tends to remain during processing and becomes a pollutant. In addition, if they exist, micro-arc will be induced, and the unevenness of the formation place of nodule will be generated on the surface. Therefore, they must be minimized. The amount of high melting point metal elements and Si, Al, Co, Ni, B and other pollutants attached to the eroded surface of the present invention other than the main component and alloy component Specifications (210 X 297 mm) —-------- Order --------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 531563 A7 B7 5. Description of the invention (t >) is 500 ppm or less. If the total amount of these substances is 500 ppm or less, micro-arcing on the eroded surface can be suppressed, and the formation of unevenness that constitutes a new nodule formation site can be prevented. Therefore, nodulation can be prevented and particle generation can be suppressed. The amount of the high melting point metal element other than the main component and the alloy component and contaminating substances such as Si, Al, Co, Ni, and B is preferably 300 ppm or less. As such, by limiting the total amount of pollutants to 500 ppm or less, preferably 300 ppm or less, and the centerline average thickness Ra to 1.0 // m or less, the effect of preventing nodule formation can be significantly improved. Preferably, the amount of the contaminated substance is analyzed by an analysis method such as GDMS, and the area within about 5 // m from the surface is analyzed and adjusted. In addition, when the surface is smoothed by chemical etching or the like, the hydrogen content on the surface is increased, and unevenness is easily generated on the surface due to a gas component that suddenly occurs microscopically during sputtering. However, in the sputtering target of the present invention, By adjusting the chemical etching conditions and the dehydrogenation treatment after the chemical etching, the hydrogen content of the eroded surface is formed below 50 ppm, thereby preventing the formation of nodules and reducing particles. The surface hydrogen content can be analyzed by comparing and analyzing the surface part and the main body part without the surface. By limiting the hydrogen content to 50 ppm or less, the effect of preventing the formation of nodule can be further improved. In this way, by reducing the hydrogen content of the eroded surface to 50 ppm or less, preferably 30 ppm or less, and the total amount of the aforementioned pollutants to 500 ppm or less, preferably 300 ppm or less, and the average centerline thickness to be 8 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 ------------------- Order --------- (Please read the back first Please fill in this page before printing) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperatives 531563 A7 B7 V. Description of Invention (fj)
Ra形成1.0//m以下，即可將結球之生成防止效果更進一 步地提高。 濺鍍靶製造時爲了調整表面粗度，一般係藉切削加工 、硏磨加工、化學蝕刻等以進行表面之平滑化，藉由如此 般之加工及表面處理的選擇與操作，而將污染物的總量和 氫的含量限定成上述般’並和中心線平均粗度Ra的調整 相結合，即可達成防止結球生成之效果。 在濺鍍靶製造時’係進行上述般之切削加工、硏磨加 工，此時就算進行強加工而調整表面粗度，有時仍無法防 止結球的生成。其理由並不是很淸楚，但可推測成，在進 行強加工下原子的配列會變亂，濺鍍時被趕出的粒子角度 會向低角度偏移，就算表面粗度小、即低凹凸下，仍會很 容易地附著。 因此，濺鍍靶的被侵蝕表面的加工變質層的厚度必須 爲50/zm以下。此處之加工變質層，係定義成會發生加工 所產生的殘留應力之區域。且，殘留應力可藉使用X射線 之殘留應力測定法等以測定之。 若進行使該加工變質層的厚度超過50//m之強加工， 則無法產生結球數的減少效果，故無法有效地將粒子數減 少。 又本發明也探討到濺鍍靶之製法，係藉由使用鑽石刀 具之精密切削以進行濺鍍面之精加工，又視需要在進行該 使用鑽石刀具之精密切削後，再藉硏磨以進行濺鍍面之精 加工。 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' -ϋ ϋ I ϋ ·ϋ 1— 1- 0 ϋ ϋ I ϋ I I J f、I I ϋ n n I ϋ I (請先閱讀背面之注咅？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 531563 A7 B7 五、發明說明（s) 已知的是，使用鑽石刀具之精密切削，就算不經習知 所需之濕式硏磨或化學硏磨亦可有效地降低表面粗度。又 藉由選擇其加工條件，即可使得中心線平均粗度形成 RaS〇.2//m，加工變質層的厚度形成15//m以下。 又，習知之使用超硬工具之場合，無論如何都很容易 產生重金屬的污染，但在使用鑽石刀具之場合則完全沒有 這種問題。 又另一特徵爲，不需使用濕式硏磨或化學硏磨中所需 之洗淨或脫水處理（化學硏磨中爲必要的）。又，當然的是 ，可以倂用習知的硏磨方法，以將表面粗度及加工變質層 的厚度進一步減低。 又，由於在靶剛開使用時膜的品質上會有不規則的分 佈產生，故通常在移到安定的成膜之前，係進行虛濺鍍。 以板片電阻値爲例，一般在過程中板片電阻値之晶圓 內的不規則分佈係在標準偏差爲3%左右之狀態下使用之， 因此從開始使用濺鍍靶起到板片電阻値之晶圓內的不規則 分佈到達標準偏差3%以內之前，係進行前述虛濺鍍。 該虛濺鍍中也會有問題產生，特別是未調整表面加工 狀態之濺鍍靶，一般所需的累計投入電力爲20KWh左右， 特別是要求在低輸出成膜之製程上，會產生大的時間損失 〇 本發明中，藉由使用鑽石刀具的精密切削而可製造出 ，濺鍍靶的被侵蝕面的表面粗度形成上述般之中心線平均 粗度Ra^0_2//m、且被侵蝕表面加工變質層的厚度15//m 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -emt ϋ 1· I Mmmmm 1 ϋ« 0 I n 1 ϋ ϋ-，· mmee ϋ 1 i am— _1 I (請先閱讀背面之注咅？事項再填寫本頁) 531563 五 經濟部智慧財產局員工消費合作社印製 A7 B7 、發明說明（/) 以下之濺鍍靶，而藉由前述般之加工變質層變小，即可得 出將該虛濺鍍所需的時間大幅地縮短之效果。 接著，將本發明在實施例和比較例之對比下加以說明 之。 (實施例1〜9及比較例1〜2) 將高純度鈦的濺鍍靶素材以旋盤旋削加工後，將被侵 鈾面施加鑽石精加工切削、濕式硏磨、化學硏磨、超純水 洗淨、脫水處理，以製作出調整好表面粗度(Ra)、污染物 質總量、氫含量 '加工變質層厚度之濺鍍靶(直徑300mmx 厚6.35mm)。數據顯示於表1及表2中。表1之〇記號代 表經施加加工或處理。 將該濺鍍靶接合在直徑348mmX厚21.0mm之銅製塾 片，並實施下述之濺鍍。 【表1J_ 素材旋削鑽石精加工濕式化學洗淨脫f 加工 切削 硏磨硏磨處理 實施例1 Ti 〇 〇 〇 實施例2 Ti 〇 〇 〇 〇_ 實施例3 Ti 〇 〇 〇 實施例4 Ti 〇 〇 〇 實施例5 Ti 〇 〇 〇 〇_ 實施例6 Ti 〇 〇 〇 O ' 實施例7 Ti 〇 〇 實施例8 Ti 〇 〇 〇 〇 實施例9 Ti 〇 〇 〇 〇 比較例1 Ti 〇 比較例2 Ti 〇 〇 〇 (〇記號代表施加加工或處理。） 11 --------訂--------- (請先閱讀背面之注咅？事項再填寫本頁} 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 531563 A7 Β7 五、發明說明（P) 【表2】 表面粗度 Ra( u m) 污染物質 總量(ppm) 氫含量(ppm) 加工變質層 厚度(//m) 實施例1 0.8 280 10 40 實施例2 0.6 45 40 10 實施例3 0.9 120 10 10 實k例4 0.3 470 15 10 實施例5 0.2 60 10 8 實施例6 0.08 40 10 6 實施例7 0.17 80 8 11 實施例8 0.13 100 10 7 實施例9 0.07 40 8 5 比較例1 1.8 670 15 70 比会2 3.0 450 10 30 將所製作出之濺鍍靶安裝在DC磁濺鍍裝置上，在氮 (請先閱讀背面之注意事項再填寫本頁) 氣氛中進行濺鍍，以在矽晶圓上形成TiN膜。接著，分別 對於實施例1〜9及比較例1〜2，記錄其等之結球數、平均 粒子數、及使用時間開始後累計投入電力量l〇kWh時之板 經濟部智慧財產局員工消費合作社印製 片電阻値的晶圓內標準偏差(Φ8”），結果顯示於表3中。 【表3】 結球數 (個/濺鍍靶） 平均粒子數 (個/晶圓） 板片電阻値 標準偏差(°/〇) 實施例1 57 31 3.6 實施例2 23 20 2.4 實施例3 41 26 2.6 實施例4 71 33 3.3 實施例5 30 26 2.4 實施例6 30 26 2.3 實施例7 32 28 2.5 實施例8 31 25 2.3 實施例9 20 21 2.1 比較例1 500 110 4.8 比較例2 500 87 3.2 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 531563 A7 B7 五、發明說明（π ) 由表2可明顯地看出，本發明的實施例1〜9之中心線 平均粗度的上限値之Ra爲以下，比較例1及2之 (請先閱讀背面之注意事項再填寫本頁) 中心線平均粗度爲及3.0//m，係超過前述上限値 〇 又，實施例1〜9中附著於被蝕刻表面之污染物質，即 主成分及合金成分以外的高融點金屬元素(W、Ta、Mo、 Nb等)及Si、A卜Co、Ni、B之總量爲500ppm以下，即 40〜470ppm的範圍內，相對於此，比較例1及2分別爲超 過上限値500ppm之670ppm及接近該上限値之450ppm。 實施例1〜9中之表面氫含量爲8ppm〜40ppm。比較例 1、2中分別爲15ppm及lOppm。 在表面加工變質層方面，相對於實施例1〜9中之5// m〜40//m，比較例1及2中分別爲超過上限値50//m之70 //m，與較高加工變質層厚度之30//m。 經濟部智慧財產局員工消費合作社印製 由表2及表3之對比可明顯地看出，所有的數據都沒 有超過中心線平均粗度的上限値、附著於被侵蝕表面的污 染物質、即主成分及合金成分以外的高融點金屬元素(W、 Ta、Mo、Nb等)及Si、A卜Co、Ni、B之總量的上限値、 氫含量的上限値、表面的加工變質層厚度之上限値等上限 値中之任一者之本發明的實施例1〜9,結球數及平均粒子 的個數少，又電阻値之晶圓內的標準偏差小，而可形成良 好的濺鍍靶。 然，所具數據係接近表面粗度、污染物質量、氫含量 及加工變質層的厚度等的上限値中之一種或1種以上之實 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 531563 Α7 Β7 五、發明說明（丨y) (請先閱讀背面之注意事項再填寫本頁) 施例1及4，結球數及平均粒子數有增加的傾向，又板片 電阻値的晶圓內標準偏差也變得稍高。因此可知，這些數 據的增加會對濺鍍靶的性質產生不佳的影響。 實施例7〜9係經施加鑽石精加工切削所得者，中心線 平均粗度Ra0.07〜0.17/zm，污染物質40〜lOOppm，加工變 質層的厚度5〜11//m，特別是中心線平均粗度Ra及加工變 質層的厚度係形成極低値。 又，此場合結球及平均粒子的發生個數少，又使用開 始後累計投入電力量lOkWh時之板片電阻値的晶圓內標準 偏差爲2.1〜2.5%之安定低値。 由以上可知，鑽石精加工切削係顯示極優異的效果。 實施例8及9，如表1所示般，係實施鑽石精加工切 削，再倂用濕式處理、洗淨或化學硏磨、洗淨及脫水處理 ，此場合可確認出結球、平均粒子的發生個數、板片電阻 値之晶圓內標準偏差具進一步的改善效果’而顯示良好的 結果。 經濟部智慧財產局員工消費合作社印製 相對於此，比較例1及比較例2係如表3所示般，結 球個數皆超過500個/1濺鍍靶且平均粒子的發生個數係極 多之110及87個/晶圓，又板片電阻標準偏差爲極高之 4.8%及3.2%。特別是污染物質量多且加工變質層厚度大之 比較例1，如表3所示，係顯示比較例中最差的結果。 由以上可知，本發明的鈦濺鍍靶，結球及粒子的發生 個數少，又板片電阻値的晶圓內標準偏差小’而可形成優 異的濺鍍靶。 14 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公ϋ " 531563 A7 B7 五、發明說明（ο ) (實施例10〜14及比較例3〜4) 其次，將本發明應用於钽上之例子（實施例10〜14)及 比較例3〜4。 將高純度鉅(Ta)的濺鍍靶素材以旋盤旋削加工後’將 被侵蝕面施加鑽石精加工切削、濕式硏磨、化學硏磨、超 純水洗淨、脫水處理，以製作出調整好表面粗度(Ra) '污 染物質總量、氫含量、加工變質層厚度之濺鍍靶（直徑 300mmX厚6.35mm)。數據顯示於表4及表5中。表4之 〇記號代表經施加加工或處理。 將該濺鍍鞭接合在直徑348mmX厚21.0mm之銅製墊 --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 (〇記號代表施加加工或處理。） 【表5】_ 表面粗度 Ra( u m) 污染物質 總量(ppm) 氫含量(ppm) 加工變質層 厚度(//m) 實施例10 0.7 320 10 30 實施例11 0.5 60 10 15 實施例12 0.14 90 10 10 實施例13 0.07 150 10 8 實施例14 0.05 35 8 8 比較例3 2.2 560 10 55 比較例4 3.5 480 10 30 15 片，並實施下述之濺鍍。 【表4】_ 素材旋削鑽石精加工濕式化學洗淨脫氫 力口工 切削 硏磨硏磨 處理 實施例10 Ta 〇 〇 〇 實施例11 Ta 〇 〇 〇 〇 實施例12 Ta 〇 〇 實細例]13 Ta 〇 〇 〇 〇 實施例14 Ta 〇 〇 〇 〇 〇 比較例3 Ta 〇 比較例4 Ta 〇 〇 〇 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 531563 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（α4) 將所製作出之濺鍍靶安裝在DC磁濺鍍裝置上，在氮氣 氛中進行濺鍍，以在矽晶圓上形成TaN膜。接著，分別對 於實施例1〇〜14及比較例3〜4 ’記錄其等之結球數、平均 粒子數、及使用時間開始後累計投入電力量1okwh時之板 片電阻値的晶圓內標準偏差(Φ8”），結果顯示於表6中。 【表6】 結球數 (個/濺鍍靶） 平均粒子數 (個/晶圓） 板片電阻値 標準偏差(％) 實施例10 65 33 3.2 實施例11 39 32 2.7 實施例12 28 26 2.6 實施例13 34 29 2.7 — 實施例14 22 23 2.3 比較例3 500 95 4.6 比較例4 500 102 3.3 由表5可明顯地看出，本發明的實施例10〜14之中心 線平均粗度的上限値之Ra爲1.0/zm以下，比較例3及4 之中心線平均粗度爲2_2/zm及3.5//m，係超過前述上限 値。 又，實施例1〇〜14中附著於被蝕刻表面之污染物質， 即主成分及合金成分以外的高融點金屬元素(W、Ti、Mo、 Nb等)及Si、A卜Co、Ni、B之總量爲500ppm以下，即 35〜32〇ppm的範圍內，相對於此，比較例3及4分別爲超 過上限値500ppm之560ppm及接近該上限値之480Ppm。 實施例10〜14中之表面氫含量爲8ppm〜25ppm。比較 例3、4中皆爲lOppm。 在表面加工變質層方面，相對於實施例10〜U中;^ 8 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -^1 ϋ e^i 1- -ϋ ϋ · I ·ϋ l ϋ n ϋ 一-口、 ϋ ϋ ϋ ·ϋ I I (請先閱讀背面之注意事項再填寫本頁) 531563 經濟部智慧財產局員工消費合作社印製 A7 ______ 五、發明說明（丨<) //m〜30//m，比較例3及4中分別爲超過上限値50//m之 55//m，與較高加工變質層厚度之30//m。 由表5及表6之對比可明顯地看出，所有的數據都沒 有超過中心線平均粗度的上限値、附著於被侵蝕表面的污 染物質、即主成分及合金成分以外的高融點金屬元素(W、 Ti、Mo、Nb等)及Si、A卜Co、Ni、B之總量的上限値、 氫含量的上限値、表面的加工變質層厚度之上限値等上限 値中之任一者之本發明的實施例10〜14,結球數及平均粒 子的個數少，又電阻値之晶圓內的標準偏差小，而可形成 良好的濺鍍靶。 然，和其他實施例相較下，所具污染物質量及加工變 質層的厚度高之實施例10，和上述TiN之場合相同般，結 球數及平均粒子數有增加的傾向，又板片電阻値的晶圓內 標準偏差也變得稍高。 實施例10係在本發明的範圍內，並不致產生特別的 問題，僅是用以說明這些污染物質量及加工變質層厚度的 增加會對濺鍍靶的性質產生不佳的影響。 實施例12〜14係經施加鑽石精加工切削所得者，中心 線平均粗度Ra0.05〜0.14//m，污染物質35〜150ppm，加工 變質層的厚度8〜10//m，特別是中心線平均粗度Ra及加工 變質層的厚度係形成極低値。 又，此場合結球及平均粒子的發生個數少，又使用開 始後累計投入電力量10kWh時之板片電阻値的晶圓內標準 偏差爲2.3〜2.7%之安定低値。 --------------------訂-------- (請先閱讀背面之注音3事項再填寫本頁) 17 531563 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（Jj 由以上可知，和實施例5〜7相同般，鑽石精加工切削 係顯示極優異的效果。 實施例13及14，如表4所示般，係實施鑽石精加工 切削，再倂用濕式處理、洗淨或化學硏磨、洗淨及脫水處 理，此場合可確認出結球、平均粒子的發生個數、板片電 阻値之晶圓內標準偏差具進一步的改善效果，而顯示良好 的結果。 相對於此，比較例3及比較例4係如表6所示般，結 球個數皆超過500個/1濺鍍靶且平均粒子的發生個數係極 多之110及87個/晶圓，又板片電阻標準偏差爲極高之 4.6%及3.3%，而顯示不佳的結果。 由以上可知，本發明的鉬濺鍍靶和前述鈦濺鍍靶相同 ，結球及粒子的發生個數少，又板片電阻値的晶圓內標準 偏差小，而可形成優異的濺鍍靶。 (實施例15〜20及比較例5〜6) 其次，將本發明應用於銅上之例子(實施例15〜20)及 比較例5〜6。 將高純度銅(Cu)的灑鍍靶素材以旋盤旋削加工後，將 被侵鈾面施加鑽石精加工切削、濕式硏磨、化學硏磨、超 純水洗淨、脫水處理，以製作出調整好表面粗度(Ra)、污 染物質總量、氫含量、加工變質層厚度之濺鍍靶（直徑 300mmX厚 6.35mm)。 數據顯示於表7及表8中。表7之〇記號代表經施加 加工或處理。 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱 --------訂---------β (請先閱讀背面之注意事項再填寫本頁) A7 531563 B7_ 五、發明說明（) 將該濺鍍靶接合在直徑348mmX厚21.0mm之銅製墊 經濟部智慧財產局員工消費合作社印製 片，並實施下述之灘鍍。 imjA__ 素材 旋削 加工 鑽石精加工 切削 濕式 硏磨 化學 硏磨 洗浄 脫Μ 處理 實施例15 Cu 〇 〇 〇 實施例16 Cu 〇 〇 〇 〇 17 Cu 〇 〇 實施例18 Cu 〇 〇 〇 〇 屬挺例19 Cu 〇 〇 〇 〇 〇 面拒例20 Cu 〇 〇 〇 〇 比較例5 Cu 〇 比較例6 Cu 〇 〇 〇 (〇記號代表施加加工或處理。） [^8]__ 表面粗度 Ra( β m) 污染物質 總量(ppm) 氫含量(ppm) 加工變質層 厚度〇m) 實施例15 0.8 360 10 10 實施例16 0.4 70 10 10 實施例π 0.11 60 1 4 —實施例18 0.05 260 10 10 實施例19 0.03 45 20 6 實施例20 0.9 55 20 20 比較例5 2.4 60 2 35 比較例4 1.6 370 20 25 將所製作出之濺鍍靶安裝在DC磁濺鍍裝置上’在氮氣 氛中進行濺鍍，以在矽晶圓上形成Cu膜。接著’分別對 於實施例15〜20及比較例5、6，記錄其等之結球數、平均 粒子數、及使用時間開始後累計投入電力量l〇kWh時之板 片電阻値的晶圓內標準偏差(Φ8”），結果顯示於表9中。 19 ---------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 531563 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（〆） 【表9】 結球數 (個/濺鍍靶） 平均粒子數 (個/晶圓） 板片電阻値 標準偏差(％) 實施例15 21 13 2.8 實施例16 8 3 2.6 實施例Π 3 1 2.3 實施例18 17 7 2.8 實施例19 6 3 2.4 實施例20 11 5 3.5 比較例5 17 6 4.1 比較例6 20 12 3.6 由表8可明顯地看出，本發明的實施例15〜2〇之中心 線平均粗度的上限値之Ra爲1.0//Π1以下，比較例5及6 之中心線平均粗度爲2.4/zm及1.6//m。 又，實施例15〜20中附著於被蝕刻表面之污染物質， 即主成分及合金成分以外的高融點金屬元素(W、Ti、Ta、 Mo、Nb等）及Si、A卜Co、Ni、B之總量爲500ppm以下 ，即45〜360ppm的範圍內，相對於此，比較例5及6分別 爲 60ppm 及 370ppm。 實施例15〜20中之表面氫含量爲lppm〜20ppm。比較 例5及6中分別爲2ppm及20ppm。 在表面加工變質層方面，相對於實施例15〜20中之4 //m〜20//m，比較例5及6中分別爲較高加工變質層厚度 之 35 // m 及 25 // m。 由表8及表9之對比可明顯地看出，所有的數據都沒 有超過中心線平均粗度的上限値、附著於被侵蝕表面的污 染物質、即主成分及合金成分以外的高融點金屬元素(W、 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 531563 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（i f )When Ra is formed to be 1.0 // m or less, the effect of preventing ball formation can be further improved. In order to adjust the surface roughness during the manufacture of sputtering targets, the surface is generally smoothed by cutting, honing, chemical etching, etc., and through the selection and operation of such processing and surface treatment, the The total amount and hydrogen content are limited to the above, and combined with the adjustment of the centerline average thickness Ra, the effect of preventing the formation of nodule can be achieved. When the sputtering target is manufactured, the above-mentioned cutting process and honing process are performed. At this time, even if the roughening is performed to adjust the surface roughness, it is sometimes impossible to prevent the formation of nodules. The reason is not very confusing, but it can be speculated that the arrangement of atoms will be disordered under strong processing, and the angle of the particles ejected during sputtering will be shifted to a low angle, even if the surface roughness is small, that is, under low unevenness. And still attach easily. Therefore, the thickness of the process-deteriorated layer on the eroded surface of the sputtering target must be 50 / zm or less. The processing metamorphic layer here is defined as the area where the residual stress generated by processing will occur. The residual stress can be measured by a residual stress measurement method using X-rays or the like. If a strong process is performed in which the thickness of the process-deteriorated layer exceeds 50 // m, the effect of reducing the number of balls cannot be produced, and the number of particles cannot be effectively reduced. In addition, the present invention also discusses a method for manufacturing a sputtering target, which uses precision cutting of a diamond tool to finish the sputtered surface, and if necessary, performs precision cutting using the diamond tool, and then performs honing by using Finishing of sputtered surfaces. 9 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) '-ϋ ϋ I ϋ · ϋ 1— 1- 0 ϋ ϋ I ϋ IIJ f, II nn nn I ϋ I (Please read first Note on the back? Matters need to be completed on this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives 531563 A7 B7 V. Description of the invention (s) It is known that the precision cutting using diamond tools, even if it is not required Wet honing or chemical honing can also effectively reduce surface roughness. Furthermore, by selecting the processing conditions, the average thickness of the center line can be RaS 0.2 // m, and the thickness of the processing metamorphic layer can be 15 // m or less. Also, in the case of the conventionally used ultra-hard tools, it is easy to cause heavy metal pollution, but in the case of using diamond knives, there is no such problem at all. Yet another feature is that no cleaning or dehydration treatment (necessary in chemical honing) required in wet honing or chemical honing is required. Of course, conventional honing methods can be used to further reduce the surface roughness and the thickness of the process-deteriorated layer. In addition, since the film quality is irregularly distributed when the target is just opened, the sputter plating is usually performed before moving to a stable film formation. Take the sheet resistance 値 as an example. Generally, the irregular distribution in the wafer of the sheet resistance 値 during the process is used with a standard deviation of about 3%, so from the beginning of the sputtering target to the sheet resistance Before the irregular distribution in the wafer is within 3% of the standard deviation, the aforementioned sputter plating is performed. There are also problems in this sputter plating, especially for sputter targets that are not adjusted for surface processing. Generally, the cumulative input power required is about 20KWh, especially in the production process that requires low output film formation. Time loss. In the present invention, it can be manufactured by precision cutting using a diamond tool. The surface roughness of the eroded surface of the sputtering target is the average thickness of the centerline Ra ^ 0_2 // m and is eroded. The thickness of the surface-modified metamorphic layer is 15 // m 10 This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) -emt ϋ 1 · I Mmmmm 1 ϋ «0 I n 1 ϋ ，-， · mmee ϋ 1 i am— _1 I (Please read the note on the back? Matters before filling out this page) 531563 The following are the sputtering targets printed by A7 B7 and Invention Description (/) of the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs and borrowed The effect of reducing the time required for this sputter plating can be obtained by reducing the size of the processing-deteriorating layer as described above. Next, the present invention will be described in comparison with examples and comparative examples. (Examples 1 to 9 and Comparative Examples 1 to 2) After the high-purity titanium sputter target material is spin-rotated, the uranium-invaded surface is subjected to diamond finishing cutting, wet honing, chemical honing, ultra-pure Water washing and dehydration treatment to produce a sputter target (diameter 300mm x thickness 6.35mm) with adjusted surface roughness (Ra), total amount of pollutants, and hydrogen content, and thickness of the processing metamorphic layer. The data are shown in Tables 1 and 2. The symbols in Table 1 No. represent processed or treated. This sputtering target was bonded to a copper cymbal having a diameter of 348 mm x a thickness of 21.0 mm, and the following sputtering was performed. [Table 1J_ Material rotary diamond finishing wet chemical cleaning def processing cutting honing honing Example 1 Ti 〇〇〇 Example 2 Ti 〇〇〇〇〇_ Example 3 Ti 〇〇〇 Example 4 Ti 〇 〇 Example 5 Ti 〇〇〇〇〇_ Example 6 Ti 〇 〇 〇 'Example 7 Ti 〇 Example 8 Ti 〇 〇 Example 9 Ti 〇 〇 〇 Comparative Example 1 Ti 〇 Comparative Example 2 Ti 〇〇〇〇 (〇 The symbol represents processing or treatment.) 11 -------- Order --------- (Please read the note on the back? Matters before filling out this page} This paper The scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 531563 A7 B7 V. Description of the invention (P) [Table 2] Surface roughness Ra (um) Total amount of pollutants (ppm) Hydrogen content (ppm) Processing metamorphic layer thickness (// m) Example 1 0.8 280 10 40 Example 2 0.6 45 40 10 Example 3 0.9 120 10 10 Example 4 0.3 470 15 10 Example 5 0.2 60 10 8 Example 6 0.08 40 10 6 Example 7 0.17 80 8 11 Example 8 0.13 100 10 7 Example 9 0.07 40 8 5 Example 1 1.8 670 15 70 Bihui 2 3.0 450 10 30 The produced sputtering target was mounted on a DC magnetic sputtering device and sputtered in an atmosphere of nitrogen (please read the precautions on the back before filling this page). To form a TiN film on a silicon wafer. Next, for Examples 1 to 9 and Comparative Examples 1 to 2, record the number of knots, the average number of particles, and the cumulative input power after the use time is 10 kWh. The standard deviation within the wafer (Φ8 ”) of the printed resistor 値 printed by the Consumer Cooperative Society of the Intellectual Property Bureau of the Ministry of Economic Affairs of the board is shown in Table 3. [Table 3] Number of balls (a / sputter target) Average number of particles (Pieces / wafer) Plate resistance 値 Standard deviation (° / 〇) Example 1 57 31 3.6 Example 2 23 20 2.4 Example 3 41 26 2.6 Example 4 71 33 3.3 Example 5 30 26 2.4 Example 6 30 26 2.3 Example 7 32 28 2.5 Example 8 31 25 2.3 Example 9 20 21 2.1 Comparative example 1 500 110 4.8 Comparative example 2 500 87 3.2 12 This paper size applies the Chinese National Standard (CNS) A4 (210 X 297) (Mm) 531563 A7 B7 V. Description of the invention (π) It is obvious from Table 2 It can be seen that the upper limit of the average thickness of the center line in Examples 1 to 9 of the present invention is as follows. Ra is as follows, and in Comparative Examples 1 and 2 (please read the precautions on the back before filling this page). In order to reach 3.0 // m, the above-mentioned upper limit is exceeded. In addition, the pollutants attached to the surface to be etched in Examples 1 to 9, that is, high melting point metal elements (W, Ta, Mo, (Nb, etc.) and Si, AB, Co, Ni, and B are 500 ppm or less, that is, in the range of 40 to 470 ppm. In contrast, Comparative Examples 1 and 2 exceed the upper limit of 670 ppm of 500 ppm and close to the upper limit, respectively. 450ppm. The surface hydrogen content in Examples 1 to 9 was 8 ppm to 40 ppm. Comparative Examples 1 and 2 were 15 ppm and 10 ppm, respectively. In terms of the surface-processed deteriorated layer, compared to 5 // m to 40 // m in Examples 1 to 9, in Comparative Examples 1 and 2, respectively, 70 // m exceeding the upper limit of 値 50 // m, and higher 30 // m of thickness of processing metamorphic layer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. From the comparison of Table 2 and Table 3, it is obvious that all the data did not exceed the upper limit of the average thickness of the center line. The pollutants attached to the eroded surface, that is, the main High melting point metal elements (W, Ta, Mo, Nb, etc.) and Si, A, Co, Ni, and B in addition to the components and alloy components, the upper limit of the total amount of 变, the upper limit of the hydrogen content, and the thickness of the surface modified layer The upper limit (e.g., upper limit) of any one of the embodiments 1 to 9 of the present invention has a small number of balls and average particles, and a small standard deviation in the wafer of resistance 値, so that good sputtering can be formed. target. Of course, the data are close to the upper limit of surface roughness, pollutant quality, hydrogen content, and thickness of the processing metamorphic layer. One or more of these are true. 13 This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) 531563 Α7 Β7 V. Description of the invention (丨 y) (Please read the notes on the back before filling this page) Examples 1 and 4, the number of balls and average particles tend to increase, and the plate The standard deviation within the wafer of the resistor 値 also becomes slightly higher. Therefore, it is known that the increase of these data will have a bad influence on the properties of the sputtering target. Examples 7 to 9 are obtained by applying diamond finishing cutting. The average thickness of the centerline Ra is 0.07 to 0.17 / zm, the pollutant is 40 to 100 ppm, and the thickness of the processed metamorphic layer is 5 to 11 // m, especially the centerline. The average roughness Ra and the thickness of the processed metamorphic layer are extremely low. In this case, the number of occurrences of nodularity and average particles is small, and the standard deviation within the wafer of the sheet resistance 时 when the cumulative input power amount 10 kWh after the start is used is a stable low 2.1 of 2.1 to 2.5%. From the above, it can be seen that the diamond finishing cutting system exhibits extremely excellent effects. In Examples 8 and 9, as shown in Table 1, diamond finishing cutting was performed, and then wet treatment, washing or chemical honing, washing, and dehydration were performed. In this case, it was possible to confirm the formation of nodules and average particles. The number of occurrences and the standard deviation within the wafer of the sheet resistance have a further improvement effect, and good results are shown. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Comparative Example 1 and Comparative Example 2 are shown in Table 3. The number of knots exceeds 500 per sputter target and the average number of particles generated is extremely high. As many as 110 and 87 wafers, and the standard deviation of the sheet resistance is extremely high of 4.8% and 3.2%. In particular, Comparative Example 1, which has a large amount of pollutants and a large thickness of the processing deterioration layer, as shown in Table 3, shows the worst result among the comparative examples. From the above, it can be seen that the titanium sputtering target of the present invention has a small number of occurrence of nodule and particles, and a small standard deviation within the wafer of the sheet resistance 値, and can form an excellent sputtering target. 14 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male " 531563 A7 B7) V. Description of the invention (ο) (Examples 10 to 14 and Comparative Examples 3 to 4) Next, the present invention is applied Examples on tantalum (Examples 10 to 14) and Comparative Examples 3 to 4. After high-purity giant (Ta) sputtering target materials are processed by spin-rotating, 'the eroded surface is subjected to diamond finishing cutting and wet-type cleaning. Grinding, chemical honing, ultra-pure water washing, and dehydration treatment to produce a sputter target with adjusted surface roughness (Ra) 'total amount of pollutants, hydrogen content, and thickness of the processed metamorphic layer (300mm x 6.35mm thick) The data are shown in Tables 4 and 5. The symbols in Table 4 represent processed or treated. The sputtering whip is joined to a copper pad with a diameter of 348mmX and a thickness of 21.0mm ------------ -------- Order --------- (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (the 0 mark represents processing or processing. ） [Table 5] _ Surface roughness Ra (um) Total amount of pollutants (ppm) Hydrogen content (ppm) Thickness of processed metamorphic layer (// m) Example 10 0.7 320 10 30 Example 11 0.5 60 10 15 Example 12 0.14 90 10 10 Example 13 0.07 150 10 8 Example 14 0.05 35 8 8 Comparative Example 3 2.2 560 10 55 Comparative Example 4 3.5 480 10 30 15 tablets and implemented the following [Table 4] _ Material Spinning Diamond Finishing Wet Chemical Cleaning Dehydrogenation Orifice Cutting Honing Honing Treatment Example 10 Ta 〇 Example 11 Ta 〇〇〇 Example 12 Ta 〇 〇Examples] 13 Ta 〇〇〇〇 Example 14 Ta 〇〇〇〇〇 Comparative Example 3 〇 〇 Comparative Example 4 Ta 〇 〇 This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm ) 531563 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (α4) The produced sputtering target is mounted on a DC magnetic sputtering device, and sputtering is performed in a nitrogen atmosphere in A TaN film was formed on the circle. Then, for each of Examples 10 to 14 and Comparative Examples 3 to 4 ', record the number of knots, the average number of particles, and the sheet resistance at the time when the cumulative amount of power is 1 okwh after the start of use. In the wafer The quasi deviation (Φ8 ”), the results are shown in Table 6. [Table 6] Number of balls (number / sputtering target) Average number of particles (number / wafer) Plate resistance 値 Standard deviation (%) Example 10 65 33 3.2 Example 11 39 32 2.7 Example 12 28 26 2.6 Example 13 34 29 2.7 — Example 14 22 23 2.3 Comparative Example 3 500 95 4.6 Comparative Example 4 500 102 3.3 It is clear from Table 5 that the present invention The upper limit 値 of the average thickness of the center line of Examples 10 to 14 is Ra or less than 1.0 / zm, and the average thickness of the center line of Comparative Examples 3 and 4 is 2_2 / zm and 3.5 // m, which exceeds the aforementioned upper limit 値. In addition, in Examples 10 to 14, the contaminated substances attached to the surface to be etched, that is, the high melting point metal elements (W, Ti, Mo, Nb, etc.) other than the main component and the alloy component, and Si, Al, Co, Ni, The total amount of B is 500 ppm or less, that is, in the range of 35 to 32 ppm. In contrast, Comparative Examples 3 and 4 are 560 ppm exceeding the upper limit (500 ppm) and 480 Ppm near the upper limit. The surface hydrogen content in Examples 10 to 14 was 8 ppm to 25 ppm. In Comparative Examples 3 and 4, both were 10 ppm. In terms of the surface-deteriorating layer, compared to Examples 10 to U; ^ 8 16 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)-^ 1 ϋ e ^ i 1- -ϋ ϋ · I · ϋ l ϋ n ϋ One-mouth, ϋ ϋ ϋ · ϋ II (Please read the notes on the back before filling out this page) 531563 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ______ V. Invention Description (丨<) // m ~ 30 // m, in Comparative Examples 3 and 4, respectively, 55 // m exceeding the upper limit of 値 50 // m, and 30 // m of the thickness of the higher processing metamorphic layer. It can be clearly seen from the comparison between Table 5 and Table 6 that all the data did not exceed the upper limit of the average thickness of the center line 値, the pollutants attached to the eroded surface, that is, the high melting point metals other than the main component and the alloy component Upper limit of the total amount of elements (W, Ti, Mo, Nb, etc.) and Si, AB, Co, Ni, B 値, upper limit of hydrogen content 値, upper limit of the thickness of the surface modified layer 値, and other upper limits 値In the embodiments 10 to 14 of the present invention, the number of balls and average particles is small, and the standard deviation in the wafer of resistance is small, so that a good sputtering target can be formed. However, compared with other examples, Example 10, which has a high quality of pollutants and a thickness of the process-deteriorating layer, is the same as that in the case of TiN described above. The number of balls and average particles tend to increase, and the sheet resistance Rhenium's wafer standard deviation also becomes slightly higher. Example 10 is within the scope of the present invention and does not cause any special problems. It is only used to explain that the increase in the quality of these pollutants and the thickness of the processing-deteriorated layer will have a bad influence on the properties of the sputtering target. Examples 12 to 14 were obtained by applying diamond finishing and cutting. The average thickness of the centerline Ra was 0.05 to 0.14 // m, the pollutant was 35 to 150 ppm, and the thickness of the processed metamorphic layer was 8 to 10 // m, especially the center. The average line thickness Ra and the thickness of the processed metamorphic layer are extremely low. In this case, the number of occurrences of nodule and average particles is small, and the standard deviation within the wafer using the sheet resistance at a cumulative input power of 10kWh after the start is a stable low of 2.3 to 2.7%. -------------------- Order -------- (Please read the note 3 on the back before filling out this page) 17 531563 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employees' consumer cooperatives A7 B7 V. Description of the invention (Jj From the above, as in Examples 5 to 7, diamond finishing and cutting systems show excellent results. Examples 13 and 14 are shown in Table 4, It is a diamond in-wafer standard, which is then processed by wet processing, cleaning or chemical honing, cleaning, and dehydration. In this case, the in-wafer standards for ball formation, average particle generation, and plate resistance can be confirmed. The deviation has a further improvement effect, and shows good results. In contrast, Comparative Example 3 and Comparative Example 4 are as shown in Table 6, and the number of nodule exceeds 500 per / 1 sputtering target and the average particle generation is There are a large number of 110 and 87 wafers, and the standard deviation of the sheet resistance is extremely high of 4.6% and 3.3%, which shows poor results. From the above, it can be seen that the molybdenum sputtering target of the present invention and the aforementioned titanium The sputtering target is the same, the number of nodule formation and particles is small, and the standard deviation in the wafer is small. (Examples 15 to 20 and Comparative Examples 5 to 6) Next, examples of applying the present invention to copper (Examples 15 to 20) and Comparative Examples 5 to 6. High purity copper (Cu) After the spinning target material is processed by spinning with a rotary disc, the uranium-invaded surface is subjected to diamond finishing cutting, wet honing, chemical honing, ultrapure water washing, and dehydration treatment to produce an adjusted surface roughness (Ra ), The total amount of pollutants, hydrogen content, and thickness of the sputter target (300mm x 6.35mm in thickness). The data are shown in Tables 7 and 8. The symbols in Table 7 represent the processed or treated parts. Paper size applies to China National Standard (CNS) A4 specifications (210 X 297 public love -------- order --------- β (Please read the precautions on the back before filling this page) A7 531563 B7_ V. Description of the invention () The sputter target is bonded to a copper pad with a diameter of 348mmX and a thickness of 21.0mm. The printed sheet is produced by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and the following beach plating is performed. ImjA__ Material Spinning Diamond finishing Cutting wet honing, chemical honing, washing, de-M treatment, Example 15 Cu 〇〇〇 Example 16 Cu 〇〇〇〇〇〇〇〇 Cu 〇 Example Cu 18 〇 〇 was a pretty example 19 Cu 〇 〇 〇 Rejection 20 Cu 〇 〇 Comparative Example 5 Cu 〇 Comparative Example 6 Cu 〇 〇 〇 (〇mark means processing or treatment is applied.) [^ 8] __ Surface roughness Ra (β m) Total amount of pollutants (ppm) Hydrogen content (ppm) Thickness of processed metamorphic layer 〇 Example 15 0.8 360 10 10 Example 16 0.4 70 10 10 Example π 0.11 60 1 4-Example 18 0.05 260 10 10 Example 19 0.03 45 20 6 Example 20 0.9 55 20 20 Comparative Example 5 2.4 60 2 35 Comparative Example 4 1.6 370 20 25 The produced sputtering target was mounted on a DC magnetic sputtering device, and sputtering was performed in a nitrogen atmosphere to form a Cu film on a silicon wafer. Next, for Examples 15 to 20 and Comparative Examples 5 and 6, record the number of knots, the average number of particles, and the in-wafer standard of the sheet resistance 时 at the time of cumulative power input 10 kWh after the start of use. Deviation (Φ8 ”), the results are shown in Table 9. 19 --------------------- Order --------- (Please read the back first Note: Please fill in this page again.) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 531563 A7 B7 Printed by the Employees ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of invention (〆) [Table 9] ] Number of balls (number / sputter target) Average number of particles (number / wafer) Plate resistance 値 Standard deviation (%) Example 15 21 13 2.8 Example 16 8 3 2.6 Example Π 3 1 2.3 Example 18 17 7 2.8 Example 19 6 3 2.4 Example 20 11 5 3.5 Comparative Example 5 17 6 4.1 Comparative Example 6 20 12 3.6 As apparent from Table 8, the average thickness of the center line of Examples 15 to 20 of the present invention The upper limit 値 of Ra is 1.0 // Π1 or less, and the average thicknesses of the center lines of Comparative Examples 5 and 6 are 2.4 / zm and 1.6 // m. In addition, in Examples 15 to 20, they were adhered to the etching. Contaminants on the surface, that is, high melting point metal elements (W, Ti, Ta, Mo, Nb, etc.) other than the main components and alloy components, and the total amount of Si, A, Co, Ni, and B are 500 ppm or less, that is, 45 ~ In the range of 360 ppm, Comparative Examples 5 and 6 are 60 ppm and 370 ppm, respectively. The surface hydrogen content in Examples 15 to 20 is 1 ppm to 20 ppm. Comparative Examples 5 and 6 are 2 ppm and 20 ppm, respectively. Surface processing In terms of the deteriorated layer, compared with 4 // m to 20 // m in Example 15 to 20, Comparative Examples 5 and 6 are respectively 35 // m and 25 // m, which are higher thicknesses of the processed deteriorated layer. The comparison between Table 8 and Table 9 clearly shows that all the data did not exceed the upper limit of the average thickness of the center line, the pollutants attached to the eroded surface, that is, the high melting point metal elements other than the main component and alloy component ( W. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------------------- Order -------- -(Please read the notes on the back before filling out this page) 531563 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (if)
Ti、Ta、Mo、Nb 等)及 Si ' Al、Co、Ni、B 之總量的上限 値、氫含量的上限値、表面的加工變質層厚度之上限値等 上限値中之任一者之本發明的實施例15〜20，結球數及平 均粒子的個數少，又電阻値之晶圓內的標準偏差小，而可 形成良好的濺鍍靶。 然，和其他實施例相較下，表面粗度數値較高且污染 物質量多之實施例15、18，又表面粗度數値高且加工變質 層的厚度大之實施例20，結球數及平均粒子數有增加的傾 向，又板片電阻値的晶圓內標準偏差也變得稍高。 前述實施例15、18及20係在本發明的範圍內，並不 致產生特別的問題，僅是用以說明這些數値的增加會對濺 鍍靶的性質產生不佳的影響。 實施例17〜19係經施加鑽石精加工切削所得者，中心 線平均粗度Ra0.03〜加工變質層的厚度4〜10/zm ，特別是中心線平均粗度Ra及加工變質層的厚度係形成 極低値。 又，此場合結球及平均粒子的發生個數少，又使用開 始後累計投入電力量10kWh時之板片電阻値的晶圓內標準 偏差爲2.3〜2.8%之安定低値。 由以上可知，和實施例5〜7相同般，鑽石精加工切削 係顯示極優異的效果。 實施例18及19，如表7所示般，係實施鑽石精加工 切削，再倂用濕式處理、洗淨或化學硏磨、洗淨及脫水處 理，此場合可確認出結球、平均粒子的發生個數、板片電 21 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) A7 B7 友、發明說明（/) 阻値之晶圓內標準偏差具進一步的改善效果’而顯示良好 的結果。 相對於此，比較例5及比較例6係如表8及表9所示 般，中心線平均粗度Ra之數値高，加工變質層之厚度厚 請 先 閱 讀 背 經濟部智慧財產局員工消費合作社印製 結球個數分別爲17及20個/1濺鍍靶，且平均粒子的 發生個數係較多之6及8個/晶圓，又板片電阻標準偏差爲 3.6%及4.1%，而顯示不佳的結果。 由以上可知，本發明的銅濺鍍靶之結球及粒子的發生 個數少，又板片電阻値的晶圓內標準偏差小，而可形成優 裹的濺鍍靶。 (實施例21〜26及比較例7〜8) 其次，將本發明應用於鋁上之例子（實施例21〜26)及 比較例7〜8。 將高純度鋁(A1)的濺鍍靶素材以旋盤旋削加工後’將 被侵蝕面施加鑽石精加工切削、濕式硏磨、化學硏磨、超 純水洗淨、脫水處理，以製作出調整好表面粗度(Ra)、污 染物質總量、氫含量、加工變質層厚度之濺鍍靶（直徑 300mmX厚6.35mm)。數據顯示於表10及表11中。表W 之◦記號代表經施加加工或處理。 將該灑鑛耙接合在直徑348mmX厚21.0mm之銅製墊 片，並實施下述之濺鍍。 22 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 意 再 填 寫 本 頁 ♦ 訂 531563 A7 B7 五、發明說明（>/ ) 【表10】 素材旋削鑽石精加工濕式化學洗淨脫氫 加工 切削 硏磨硏磨處理 實施例21 A1 〇 〇 〇 實施例22 A1 〇 〇 〇 〇 實施例23 A1 〇 〇 實施例24 A1 〇 〇 〇 〇 實施例25 A1 〇 〇 〇 〇 〇 實施例26 A1 〇 〇 〇 〇 比較例7 A1 〇 比較例8 A1 〇 〇 〇 (◦記號代表施加加工或處理。） 【表11】 表面粗度 Ra( β m) 污染物質 總量(ppm) 氫含量(ppm) 加工變質層 厚度(//m) 實施例21 0.9 240 10 10 實施例22 0.8 100 10 10 實施例23 0.15 30 1 5 實施例24 0.12 130 10 10 實施例25 0.03 30 15 5 實施例26 0.3 45 20 20 比較例7 3.1 70 2 30 比較例8 2.2 400 10 25 將所製作出之A1濺鍍靶安裝在DC磁濺鍍裝置上，在 --------------------訂---------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 氮氣氛中進行濺鍍，以在矽晶圓上形成A1膜。接著，分別 對於實施例21〜26及比較例7〜8，記錄其等之結球數、平 均粒子數、及使用時間開始後累計投入電力量l〇kWh時之 板片電阻値的晶圓內標準偏差(Φ8”），結果顯示於表12中 23 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 531563 A7 B7 五、發明說明（>>0 【表12】 結球數 (個/濺鍍靶） 平均粒」 (個/晶 實施例21 15 實施例22 10 3’ 實施例23 2 實施例24 13 6’ 實施例25 5 3 實施例26 10 5 比較例7 17 6 比較例8 19 12’ 板片電阻値 標準偏差(％) 2.8 2.8 2.4 2.8 2.4 3.5 4.0 3.7 由表η可明顯地看出，本發明__ 2⑽ 線平均粗度的上限値之Ra胃L0,以卞，比較例7及8 之中心線平均粗度爲3·1//πι及2.2//m。 又，實細21〜26中附著於被触刻表面之污染物質， 即主成分及合金成分以外的茼融點金屬元奉(w、丁丨、Ta、 Mo、Nb等）及Si、A卜Co、Ni、B之總量爲5〇〇ppm以下 ，即30〜240ppm的範圍內，相對於此，比較例7及8分別 爲 70ppm 及 400ppm。 實施例21〜26中之表面氫含量爲lppm〜20ppm。比較 --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 例7、8中分別爲2ppm與lOppm。 在表面加工變質層方面，相對於實施例21〜26中之5 〜2〇/zm，比較例7及8中分別爲較高加工變質層厚度 之 30 μ m 與 25ppm。 由表11及表12之對比可明顯地看出，所有的數據都 沒有超過中心線平均粗度的上限値、附著於被侵蝕表面的 24 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 531563 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（>$) 污染物質、即主成分及合金成分以外的高融點金屬元素(W 、Ti、Ta、Mo、Nb等)及Si、A卜Co、Ni、B之總量的上 限値、氫含量的上限値、表面的加工變質層厚度之上限値 等上限値中之任一者之本發明的實施例21〜26,結球數及 平均粒子的個數少，又電阻値之晶圓內的標準偏差小，而 可形成良好的濺鍍靶。 然，和其他實施例相較下，所具表面粗度和污染物質 量稍高之實施例21及22，係顯示較多的結球數，且板片 電阻値的晶圓內標準偏差也變得稍高。又，氫含量及加工 變質層的厚度稍高之實施例26，結球數及板片電阻値的晶 圓內標準偏差有稍增加的傾向，而這些增加係會對濺鍍靶 的性質產生不佳的影響。然，實施例21〜26中之任一者都 是在本發明的範圍內，並不致產生特別的問題。 實施例23〜25係經施加鑽石精加工切削所得者，中心 線平均粗度Ra0.03〜0.15//m，污染物質30〜130ppm，加工 變質層的厚度5〜10//m，特別是中心線平均粗度Ra及加工 變質層的厚度係形成極低値。 又，此場合結球及平均粒子的發生個數少，又使用開 始後累計投入電力量10kWh時之板片電阻値的晶圓內標準 偏差爲2.4〜2.8%之安定低値。 由以上可知，和實施例5〜7相同般，鑽石精加工切削 係顯示極優異的效果。 實施例24及25，如表10所示般，係實施鑽石精加工 切削，再倂用濕式處理、洗淨或化學硏磨、洗淨及脫水處 25 氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁)Ti, Ta, Mo, Nb, etc.) and any one of the upper limits of the total amount of Si 'Al, Co, Ni, B 値, the upper limit of the hydrogen content 値, the upper limit of the thickness of the surface modified layer 变, etc. In the examples 15 to 20 of the present invention, the number of ball formation and the average number of particles are small, and the standard deviation in the wafer with low resistance is small, so that a good sputtering target can be formed. However, compared with other embodiments, Examples 15 and 18 having a high surface roughness number and a large amount of pollutants, and Embodiment 20 having a high surface roughness number and a large thickness of the processed metamorphic layer, the number of balls and average The number of particles tends to increase, and the standard deviation within the wafer of the sheet resistance 値 also becomes slightly higher. The foregoing embodiments 15, 18, and 20 are within the scope of the present invention, and do not cause special problems, but merely to explain that the increase of these numbers will have a bad influence on the properties of the sputtering target. Examples 17 to 19 are obtained by applying diamond finishing cutting, and the average thickness of the centerline Ra0.03 to the thickness of the processed metamorphic layer 4 to 10 / zm, especially the average thickness of the centerline Ra and the thickness of the processed metamorphic layer Formation of extremely low radon. In this case, the number of occurrences of nodule and average particles is small, and the standard deviation within the wafer using the sheet resistance at the time of cumulative power input 10kWh after the start is a stable low of 2.3 to 2.8%. From the above, it can be seen that, as in Examples 5 to 7, the diamond finishing cutting system exhibits extremely excellent effects. In Examples 18 and 19, as shown in Table 7, diamond finishing cutting was performed, and then wet treatment, washing or chemical honing, washing, and dehydration were performed. In this case, it was possible to confirm the formation of nodules and average particles. Number of occurrences, sheet electricity 21 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------------- Order- ------- (Please read the precautions on the back before filling this page) A7 B7 Friends, Invention Description (/) The standard deviation in the wafer with resistance has further improvement, and it shows good results. In contrast, Comparative Example 5 and Comparative Example 6 are as shown in Tables 8 and 9, the average thickness of the centerline Ra is high, and the thickness of the processed metamorphic layer is thick. Please read the staff consumption of the Intellectual Property Bureau of the Ministry of Economic Affairs first. The number of knots printed by the cooperative is 17 and 20/1 sputter targets, and the average number of particles generated is 6 and 8 per wafer, and the standard deviations of the sheet resistance are 3.6% and 4.1%. While showing poor results. From the above, it can be seen that the number of occurrences of nodule and particles of the copper sputtering target of the present invention is small, and the standard deviation within the wafer of the sheet resistance 小 is small, so that an excellent sputtering target can be formed. (Examples 21 to 26 and Comparative Examples 7 to 8) Next, examples (Examples 21 to 26) and Comparative Examples 7 to 8 in which the present invention is applied to aluminum. After the high-purity aluminum (A1) sputtering target material is processed by spin-rotating, 'the eroded surface is subjected to diamond finishing cutting, wet honing, chemical honing, ultrapure water washing, and dehydration processing to make adjustments. Sputtering target with good surface roughness (Ra), total amount of pollutants, hydrogen content, and thickness of processed metamorphic layer (300mm in diameter X 6.35mm in thickness). The data are shown in Tables 10 and 11. The ◦ mark in Table W indicates that it has been processed or treated. The sprinkler harrow was bonded to a copper pad having a diameter of 348 mm x a thickness of 21.0 mm, and the following sputtering was performed. 22 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm). Please fill in this page again ♦ Order 531 563 A7 B7 V. Description of the invention (> /) [Table 10] Material Spinning Diamond Finishing Wet Type Chemical cleaning, dehydrogenation, cutting, honing and honing. Example 21 A1 0000 Example 22 A1 0000 Example 23 A1 〇 Example 24 A1 10000 Example 25 A1 10000 Example 26 A1 〇〇〇〇Comparative Example 7 A1 〇Comparative Example 8 A1 〇〇〇 (The symbol stands for applied processing or treatment.) [Table 11] Surface roughness Ra (β m) Total amount of pollutants (ppm) Hydrogen Content (ppm) Thickness of processed metamorphic layer (// m) Example 21 0.9 240 10 10 Example 22 0.8 100 10 10 Example 23 0.15 30 1 5 Example 24 0.12 130 10 10 Example 25 0.03 30 15 5 Example 26 0.3 45 20 20 Comparative Example 7 3.1 70 2 30 Comparative Example 8 2.2 400 10 25 The produced A1 sputtering target was mounted on a DC magnetic sputtering device at ------------ -------- Order ---------- (Please read the precautions on the back before (Fill in this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and sputtering in a nitrogen atmosphere to form an A1 film on a silicon wafer. Next, for Examples 21 to 26 and Comparative Examples 7 to 8, the number of knots, the average number of particles, and the in-wafer standard of the sheet resistance 时 at the time of the cumulative input power of 10 kWh after the start of use were recorded. Deviation (Φ8 ”), the results are shown in Table 12. 23 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 531563 A7 B7 V. Description of the invention (> > 0 [Table 12] Knotting Number (pieces / sputter target) Average grains "(pieces / crystal Example 21 15 Example 22 10 3 'Example 23 2 Example 24 13 6' Example 25 5 3 Example 26 10 5 Comparative Example 7 17 6 Comparative Example 8 19 12 'Plate resistance 値 Standard deviation (%) 2.8 2.8 2.4 2.8 2.4 3.5 4.0 3.7 It can be clearly seen from Table η that the upper limit of the average thickness of the line of the present invention __ 2 値 Ra Ra L0, Alas, the average thicknesses of the center lines of Comparative Examples 7 and 8 are 3 · 1 // πι and 2.2 // m. In addition, the contaminated substances that adhere to the surface to be etched in 21 to 26, that is, the main components and alloy components The total melting point of metal elements (w, Ding, Ta, Mo, Nb, etc.) and Si, A, Co, Ni, and B is 5,000 ppm. In the range of 30 to 240 ppm, Comparative Examples 7 and 8 are 70 ppm and 400 ppm, respectively. The surface hydrogen content in Examples 21 to 26 is 1 ppm to 20 ppm. Comparison --------- ----------- Order --------- (Please read the notes on the back before filling out this page) Printed in cases 7 and 8 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, respectively In terms of surface-processed deteriorated layer, compared to 5 to 20 / zm in Examples 21 to 26, Comparative Examples 7 and 8 have 30 μm and 25 ppm of higher processed-degraded layer thickness, respectively. The comparison between Table 11 and Table 12 clearly shows that all the data did not exceed the upper limit of the average thickness of the center line. 24 paper sizes attached to the eroded surface are in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 531563 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (> $) Pollutants, ie, high melting point metal elements (W, Ti, Ta, Mo, etc.) , Nb, etc.) and the upper limit of the total amount of Si, AB, Co, Ni, B 値, the upper limit of the hydrogen content 表面, the surface processed deterioration layer The upper limit of the degree (e.g., the upper limit) of any one of the embodiments 21 to 26 of the present invention, the number of balls and average particles is small, and the standard deviation in the wafer of the resistance is small, so that a good sputtering can be formed. Plated target. However, compared with other embodiments, Examples 21 and 22, which have slightly higher surface roughness and higher quality of contaminants, show a larger number of knots, and the standard deviation within the wafer of the sheet resistance 値 also becomes Slightly higher. In Example 26 where the hydrogen content and the thickness of the process-deteriorated layer were slightly higher, the number of knots and the standard deviation within the wafer resistance tended to increase slightly, and these increases resulted in poor properties of the sputtering target. Impact. However, any of Examples 21 to 26 is within the scope of the present invention and does not cause any particular problems. Examples 23 to 25 are obtained by applying diamond finishing cutting. The average thickness of the centerline Ra is 0.03 to 0.15 // m, the pollutant is 30 to 130 ppm, and the thickness of the processed metamorphic layer is 5 to 10 // m, especially the center. The average line thickness Ra and the thickness of the processed metamorphic layer are extremely low. In this case, the number of ball formation and average particle generation is small, and the standard deviation within the wafer of the sheet resistance when the cumulative input power amount is 10 kWh after the start is a stable low of 2.4 to 2.8%. From the above, it can be seen that, as in Examples 5 to 7, the diamond finishing cutting system exhibits extremely excellent effects. In Examples 24 and 25, as shown in Table 10, diamond finishing cutting was performed, and then wet-treated, washed or chemically honed, washed, and dewatered. The 25-square scale was applied to Chinese National Standards (CNS). A4 specification (210 X 297 mm) -------------------- Order --------- (Please read the precautions on the back before filling in this page)