DE69413327D1 - Mosaik-Zerstäubungs-Target - Google Patents

Mosaik-Zerstäubungs-Target

Info

Publication number
DE69413327D1
DE69413327D1 DE69413327T DE69413327T DE69413327D1 DE 69413327 D1 DE69413327 D1 DE 69413327D1 DE 69413327 T DE69413327 T DE 69413327T DE 69413327 T DE69413327 T DE 69413327T DE 69413327 D1 DE69413327 D1 DE 69413327D1
Authority
DE
Germany
Prior art keywords
sputtering target
mosaic
mosaic sputtering
target
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69413327T
Other languages
English (en)
Other versions
DE69413327T2 (de
Inventor
Tateo Ohhashi
Koichi Nakashima
Hideaki Fukuyo
Takakazu Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16362340&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69413327(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Application granted granted Critical
Publication of DE69413327D1 publication Critical patent/DE69413327D1/de
Publication of DE69413327T2 publication Critical patent/DE69413327T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69413327T 1993-07-15 1994-06-30 Mosaik-Zerstäubungs-Target Expired - Fee Related DE69413327T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5196712A JP2898515B2 (ja) 1993-07-15 1993-07-15 モザイクターゲット

Publications (2)

Publication Number Publication Date
DE69413327D1 true DE69413327D1 (de) 1998-10-22
DE69413327T2 DE69413327T2 (de) 1999-04-29

Family

ID=16362340

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413327T Expired - Fee Related DE69413327T2 (de) 1993-07-15 1994-06-30 Mosaik-Zerstäubungs-Target

Country Status (4)

Country Link
EP (1) EP0634499B1 (de)
JP (1) JP2898515B2 (de)
KR (1) KR100215592B1 (de)
DE (1) DE69413327T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2924891B1 (ja) * 1998-05-15 1999-07-26 日本電気株式会社 スパッタリング装置
US6190516B1 (en) * 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
CN102317498A (zh) * 2009-05-28 2012-01-11 株式会社爱发科 溅射靶及溅射靶的处理方法
JP5808066B2 (ja) 2011-05-10 2015-11-10 エイチ．シー．スターク インク． 複合ターゲット
DE102013104212A1 (de) 2012-04-26 2013-10-31 Kramer & Best Process Engineering Gmbh Vogelschutzglas und Verfahren zum Herstellen eines Vogelschutzglases
JP6692635B2 (ja) 2015-12-09 2020-05-13 エドワーズ株式会社 連結型ネジ溝スペーサ、および真空ポンプ
DE102017128724A1 (de) 2017-12-04 2019-06-06 Friedrich-Alexander-Universität Erlangen Schichtsystem, Bauteil und Verfahren zum Beschichten
DE102021104255A1 (de) * 2021-02-23 2022-08-25 Cemecon Ag. Zerstäubungstarget

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195788A (ja) * 1984-10-17 1986-05-14 Mitsubishi Metal Corp 光磁気記録薄膜形成用複合ターゲット材
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
JPH01290765A (ja) * 1988-05-16 1989-11-22 Toshiba Corp スパッタリングターゲット
US5190630A (en) * 1989-03-01 1993-03-02 Kabushiki Kaisha Toshiba Sputtering target
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH0586460A (ja) * 1991-07-31 1993-04-06 Mitsubishi Materials Corp スパツタリング用ターゲツトおよびその製造方法
EP0535314A1 (de) * 1991-08-30 1993-04-07 Mitsubishi Materials Corporation Zerstäubungstarget aus einer Platin-Kobalt-Legierung und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
DE69413327T2 (de) 1999-04-29
EP0634499B1 (de) 1998-09-16
KR100215592B1 (ko) 1999-08-16
KR950003472A (ko) 1995-02-16
JP2898515B2 (ja) 1999-06-02
JPH0734234A (ja) 1995-02-03
EP0634499A1 (de) 1995-01-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee