KR950003472A - 모자이크 타겟 - Google Patents

모자이크 타겟 Download PDF

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Publication number
KR950003472A
KR950003472A KR1019940016925A KR19940016925A KR950003472A KR 950003472 A KR950003472 A KR 950003472A KR 1019940016925 A KR1019940016925 A KR 1019940016925A KR 19940016925 A KR19940016925 A KR 19940016925A KR 950003472 A KR950003472 A KR 950003472A
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KR
South Korea
Prior art keywords
target
piece
mosaic
solid
pieces
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Application number
KR1019940016925A
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English (en)
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KR100215592B1 (ko
Inventor
타테오 오오하시
코이치 나카시마
히데아키 후쿠요
타카카즈 세키
Original Assignee
나가시마 카즈나리
가부시기가이샤 재팬에너지
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16362340&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR950003472(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 나가시마 카즈나리, 가부시기가이샤 재팬에너지 filed Critical 나가시마 카즈나리
Publication of KR950003472A publication Critical patent/KR950003472A/ko
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Publication of KR100215592B1 publication Critical patent/KR100215592B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은, 복수의 피이스로 구성되는 모자이크 타겟에 관한 것으로서, 인접하는 피이스의 맞댐부분의 틈새에 기인하는 이상방전이나 파티클의 발생을 배재하고, 타겟재료의 쓸데없는 가공을 필요로 하지 않는 모자이크 타겟의 개방을 목적으로 하며, 그 구성에 있어서, 복수의 피이스로 구성되는 모자이크 타겟에 있어서, 인접하는 피이스의 맞댐부분을 고상접합한 것을 특징으로 하는 모자이크 타겟이며, 재질 A의 피이스(1)와 재질 B의 피이스(2)를 교호로 배열하고, 맞댐부분을 HIP, 호토프레스등에 의해 적당한 압력 및 온도조건에 의해 고상접합하고, 접합재를 타겟으로 기계가공한다. 고상접합은 각 타겟피이스의 특성을 실질상 희생하는 일없이 피이스간의 틈새를 배제해서 모자이크 타겟을 일체화한다. 틈새에 기인하는 이상방전이나 땜납재 혹은 뒷받침판재의 동시스퍼터에 의한 스패터막의 오염을 회피하는모자이크 타겟을 실현한다.

Description

모자이크 타겟
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 타겟피이스의 배열예 및 압력의 적용예를 표시하며, (a)는 블록형상의 2종의 피이스를 방사형상으로 교호로 배열하고, HIP에 의해 고상(固相)접합해서 직원주(直圓柱)형상의 타겟접합재를 제작한 상태를 표시하고, (b)는 평판형상의 2종의 피이스를 교호로 맞포개어, 호토프레스에 의해 고상접합한 타겟접합제를 제작한 상태를 표시한 도면, 제2도는 실시예에서 사용한 Ta-Mo모자이크 타겟을 표시한 상면도.

Claims (1)

  1. 복수의 피이스로 구성되는 모자이크 타겟에 있어서, 인접하는 피이스의 맞댐부분을 고상접합(固相接合)한 것을 특징으로 하는 모자이크 타겟.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940016925A 1993-07-15 1994-07-14 모자이크 타아겟 KR100215592B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5196712A JP2898515B2 (ja) 1993-07-15 1993-07-15 モザイクターゲット
JP93-196712 1993-07-15

Publications (2)

Publication Number Publication Date
KR950003472A true KR950003472A (ko) 1995-02-16
KR100215592B1 KR100215592B1 (ko) 1999-08-16

Family

ID=16362340

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016925A KR100215592B1 (ko) 1993-07-15 1994-07-14 모자이크 타아겟

Country Status (4)

Country Link
EP (1) EP0634499B1 (ko)
JP (1) JP2898515B2 (ko)
KR (1) KR100215592B1 (ko)
DE (1) DE69413327T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2924891B1 (ja) * 1998-05-15 1999-07-26 日本電気株式会社 スパッタリング装置
US6190516B1 (en) * 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
CN102317498A (zh) * 2009-05-28 2012-01-11 株式会社爱发科 溅射靶及溅射靶的处理方法
JP5808066B2 (ja) 2011-05-10 2015-11-10 エイチ．シー．スターク インク． 複合ターゲット
DE102013104212A1 (de) 2012-04-26 2013-10-31 Kramer & Best Process Engineering Gmbh Vogelschutzglas und Verfahren zum Herstellen eines Vogelschutzglases
JP6692635B2 (ja) 2015-12-09 2020-05-13 エドワーズ株式会社 連結型ネジ溝スペーサ、および真空ポンプ
DE102017128724A1 (de) 2017-12-04 2019-06-06 Friedrich-Alexander-Universität Erlangen Schichtsystem, Bauteil und Verfahren zum Beschichten
DE102021104255A1 (de) * 2021-02-23 2022-08-25 Cemecon Ag. Zerstäubungstarget

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195788A (ja) * 1984-10-17 1986-05-14 Mitsubishi Metal Corp 光磁気記録薄膜形成用複合ターゲット材
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
JPH01290765A (ja) * 1988-05-16 1989-11-22 Toshiba Corp スパッタリングターゲット
US5190630A (en) * 1989-03-01 1993-03-02 Kabushiki Kaisha Toshiba Sputtering target
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH0586460A (ja) * 1991-07-31 1993-04-06 Mitsubishi Materials Corp スパツタリング用ターゲツトおよびその製造方法
EP0535314A1 (en) * 1991-08-30 1993-04-07 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same

Also Published As

Publication number Publication date
DE69413327T2 (de) 1999-04-29
EP0634499B1 (en) 1998-09-16
KR100215592B1 (ko) 1999-08-16
JP2898515B2 (ja) 1999-06-02
JPH0734234A (ja) 1995-02-03
EP0634499A1 (en) 1995-01-18
DE69413327D1 (de) 1998-10-22

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